JP4731690B2 - ポリシリコンレジスタおよびそれを生産する方法 - Google Patents
ポリシリコンレジスタおよびそれを生産する方法 Download PDFInfo
- Publication number
- JP4731690B2 JP4731690B2 JP2000583087A JP2000583087A JP4731690B2 JP 4731690 B2 JP4731690 B2 JP 4731690B2 JP 2000583087 A JP2000583087 A JP 2000583087A JP 2000583087 A JP2000583087 A JP 2000583087A JP 4731690 B2 JP4731690 B2 JP 4731690B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistor
- oxide
- stabilization
- register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9803883-9 | 1998-11-13 | ||
SE9803883A SE513116C2 (sv) | 1998-11-13 | 1998-11-13 | Polykiselresistor och sätt att framställa sådan |
PCT/SE1999/002092 WO2000030176A1 (en) | 1998-11-13 | 1999-11-15 | A polysilicon resistor and a method of producing it |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002530868A JP2002530868A (ja) | 2002-09-17 |
JP4731690B2 true JP4731690B2 (ja) | 2011-07-27 |
Family
ID=20413276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000583087A Expired - Fee Related JP4731690B2 (ja) | 1998-11-13 | 1999-11-15 | ポリシリコンレジスタおよびそれを生産する方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6400252B1 (sv) |
EP (1) | EP1142016A1 (sv) |
JP (1) | JP4731690B2 (sv) |
KR (1) | KR100722310B1 (sv) |
CN (1) | CN1156004C (sv) |
AU (1) | AU1901600A (sv) |
CA (1) | CA2350656A1 (sv) |
HK (1) | HK1042590A1 (sv) |
SE (1) | SE513116C2 (sv) |
WO (1) | WO2000030176A1 (sv) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7439146B1 (en) * | 2000-08-30 | 2008-10-21 | Agere Systems Inc. | Field plated resistor with enhanced routing area thereover |
KR100767540B1 (ko) * | 2001-04-13 | 2007-10-17 | 후지 덴키 홀딩스 가부시끼가이샤 | 반도체 장치 |
JP2004071927A (ja) * | 2002-08-08 | 2004-03-04 | Renesas Technology Corp | 半導体装置 |
US20040070048A1 (en) * | 2002-10-15 | 2004-04-15 | Kwok Siang Ping | Providing high precision resistance in an integrated circuit using a thin film resistor of controlled dimension |
US6885280B2 (en) * | 2003-01-31 | 2005-04-26 | Fairchild Semiconductor Corporation | High value split poly p-resistor with low standard deviation |
DE10317466A1 (de) * | 2003-04-16 | 2004-12-09 | Robert Bosch Gmbh | Elektromotor |
US7112535B2 (en) * | 2003-09-30 | 2006-09-26 | International Business Machines Corporation | Precision polysilicon resistor process |
KR100587669B1 (ko) * | 2003-10-29 | 2006-06-08 | 삼성전자주식회사 | 반도체 장치에서의 저항 소자 형성방법. |
US20070096260A1 (en) * | 2005-10-28 | 2007-05-03 | International Business Machines Corporation | Reduced parasitic and high value resistor and method of manufacture |
CN100409415C (zh) * | 2005-12-06 | 2008-08-06 | 上海华虹Nec电子有限公司 | 一种在集成电路中使用α多晶硅的方法 |
US7642892B1 (en) | 2006-03-10 | 2010-01-05 | Integrated Device Technology, Inc. | Negative voltage coefficient resistor and method of manufacture |
US7855422B2 (en) * | 2006-05-31 | 2010-12-21 | Alpha & Omega Semiconductor, Ltd. | Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process |
US7691717B2 (en) | 2006-07-19 | 2010-04-06 | International Business Machines Corporation | Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof |
DE102008035808B4 (de) * | 2008-07-31 | 2015-06-03 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Halbleiterbauelement mit einem Silizium/Germanium-Widerstand |
US8054156B2 (en) * | 2008-08-26 | 2011-11-08 | Atmel Corporation | Low variation resistor |
US8395435B2 (en) * | 2009-07-30 | 2013-03-12 | Qualcomm, Incorporated | Switches with bias resistors for even voltage distribution |
JP6556556B2 (ja) | 2015-08-20 | 2019-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN106684046B (zh) * | 2015-11-11 | 2019-03-08 | 无锡华润上华科技有限公司 | 一种降低多晶高阻的氢化作用的结构、方法及半导体器件 |
JP6939497B2 (ja) * | 2017-12-13 | 2021-09-22 | 富士電機株式会社 | 抵抗素子 |
US10211830B2 (en) | 2017-04-28 | 2019-02-19 | Qualcomm Incorporated | Shunt termination path |
US10910714B2 (en) | 2017-09-11 | 2021-02-02 | Qualcomm Incorporated | Configurable power combiner and splitter |
JP7275884B2 (ja) | 2019-06-13 | 2023-05-18 | 富士電機株式会社 | 抵抗素子及びその製造方法 |
JPWO2022239719A1 (sv) * | 2021-05-10 | 2022-11-17 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1136773A (en) * | 1978-08-14 | 1982-11-30 | Norikazu Ohuchi | Semiconductor device |
US4758814A (en) * | 1985-12-02 | 1988-07-19 | Motorola, Inc. | Structure and method for wire lead attachment to a high temperature ceramic sensor |
US5241206A (en) * | 1991-07-03 | 1993-08-31 | Micron Technology, Inc. | Self-aligned vertical intrinsic resistance |
JPH0677402A (ja) * | 1992-07-02 | 1994-03-18 | Natl Semiconductor Corp <Ns> | 半導体デバイス用誘電体構造及びその製造方法 |
SE504969C2 (sv) * | 1995-09-14 | 1997-06-02 | Ericsson Telefon Ab L M | Polykiselresistor och förfarande för framställning av en sådan |
SE511816C3 (sv) * | 1996-06-17 | 2000-01-24 | Ericsson Telefon Ab L M | Resistor innefattande en resistorkropp av polykristallint kisel samt foerfarande foer framstaellning av en saadan |
-
1998
- 1998-11-13 SE SE9803883A patent/SE513116C2/sv not_active IP Right Cessation
-
1999
- 1999-11-15 WO PCT/SE1999/002092 patent/WO2000030176A1/en not_active Application Discontinuation
- 1999-11-15 KR KR1020017005458A patent/KR100722310B1/ko not_active IP Right Cessation
- 1999-11-15 EP EP99962609A patent/EP1142016A1/en not_active Withdrawn
- 1999-11-15 CA CA002350656A patent/CA2350656A1/en not_active Abandoned
- 1999-11-15 AU AU19016/00A patent/AU1901600A/en not_active Abandoned
- 1999-11-15 CN CNB998132470A patent/CN1156004C/zh not_active Expired - Fee Related
- 1999-11-15 JP JP2000583087A patent/JP4731690B2/ja not_active Expired - Fee Related
-
2000
- 2000-02-14 US US09/503,484 patent/US6400252B1/en not_active Expired - Lifetime
-
2002
- 2002-05-31 HK HK02104181.9A patent/HK1042590A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20010075671A (ko) | 2001-08-09 |
SE513116C2 (sv) | 2000-07-10 |
AU1901600A (en) | 2000-06-05 |
CN1326591A (zh) | 2001-12-12 |
HK1042590A1 (zh) | 2002-08-16 |
CA2350656A1 (en) | 2000-05-25 |
WO2000030176A1 (en) | 2000-05-25 |
US6400252B1 (en) | 2002-06-04 |
JP2002530868A (ja) | 2002-09-17 |
EP1142016A1 (en) | 2001-10-10 |
SE9803883L (sv) | 2000-05-14 |
CN1156004C (zh) | 2004-06-30 |
KR100722310B1 (ko) | 2007-05-28 |
SE9803883D0 (sv) | 1998-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4731690B2 (ja) | ポリシリコンレジスタおよびそれを生産する方法 | |
KR100530401B1 (ko) | 저저항 게이트 전극을 구비하는 반도체 장치 | |
US4378628A (en) | Cobalt silicide metallization for semiconductor integrated circuits | |
KR100363667B1 (ko) | 안정화된폴리실리콘저항기및그제조방법 | |
Rydberg et al. | Long-term stability and electrical properties of compensation doped poly-Si IC-resistors | |
JPH11195753A (ja) | 半導体装置およびその製造方法 | |
GB1566072A (en) | Semiconductor device | |
US7498219B2 (en) | Methods for reducing capacitor dielectric absorption and voltage coefficient | |
JPS60182133A (ja) | 半導体装置の製造方法 | |
US6903017B2 (en) | Integrated circuit metallization using a titanium/aluminum alloy | |
JP2018107378A (ja) | 炭化珪素半導体装置とその製造方法、炭化珪素半導体の酸化膜の形成方法 | |
US7923362B2 (en) | Method for manufacturing a metal-semiconductor contact in semiconductor components | |
US20230060817A1 (en) | Josephson transistor | |
US20230223274A1 (en) | Integrated circuit with getter layer for hydrogen entrapment | |
JPH0666163B2 (ja) | 薄膜抵抗体を有する半導体装置及びその製造方法 | |
JPH0628315B2 (ja) | 半導体装置 | |
JP3058956B2 (ja) | 半導体装置およびその製造方法 | |
JPH0232545A (ja) | 半導体装置の製造方法 | |
US20210005560A1 (en) | Process flow for fabrication of cap metal over top metal with sinter before protective dielectric etch | |
JPH0349229A (ja) | 半導体装置 | |
Lu et al. | Interface Stability of Metal Barrier and low K Dielectrics | |
JPS6354774A (ja) | 化合物半導体装置の製造方法 | |
JPH09246268A (ja) | 集積回路の配線構造 | |
JPH0345537B2 (sv) | ||
Rydberg et al. | Influence on the Long‐Term Stability of Polysilicon Resistors from Traces of Titanium and Tungsten |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20041203 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060825 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100423 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100720 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100727 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100924 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101029 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110128 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110204 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110228 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110401 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110420 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140428 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |