CN1324111C - 用于含水酸蚀刻溶液的氟化表面活性剂 - Google Patents
用于含水酸蚀刻溶液的氟化表面活性剂 Download PDFInfo
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- CN1324111C CN1324111C CNB038249278A CN03824927A CN1324111C CN 1324111 C CN1324111 C CN 1324111C CN B038249278 A CNB038249278 A CN B038249278A CN 03824927 A CN03824927 A CN 03824927A CN 1324111 C CN1324111 C CN 1324111C
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- 239000004094 surface-active agent Substances 0.000 title abstract description 26
- 239000011260 aqueous acid Substances 0.000 title description 7
- 238000005530 etching Methods 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims description 35
- 239000013543 active substance Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- -1 perfluoroalkyl sulfonamide Chemical class 0.000 claims description 10
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 125000004103 aminoalkyl group Chemical group 0.000 claims description 7
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 229940124530 sulfonamide Drugs 0.000 claims description 4
- 125000001118 alkylidene group Chemical group 0.000 claims description 3
- 150000004673 fluoride salts Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000002253 acid Substances 0.000 abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 69
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 59
- 239000000203 mixture Substances 0.000 description 54
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 42
- 238000002360 preparation method Methods 0.000 description 37
- 239000007787 solid Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 24
- 239000008367 deionised water Substances 0.000 description 21
- 229910021641 deionized water Inorganic materials 0.000 description 21
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000011734 sodium Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 238000003756 stirring Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 10
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 150000001721 carbon Chemical group 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 238000009736 wetting Methods 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- 238000001914 filtration Methods 0.000 description 7
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- FSSPGSAQUIYDCN-UHFFFAOYSA-N 1,3-Propane sultone Chemical compound O=S1(=O)CCCO1 FSSPGSAQUIYDCN-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 239000011324 bead Substances 0.000 description 5
- 238000004821 distillation Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- MHYFEEDKONKGEB-UHFFFAOYSA-N oxathiane 2,2-dioxide Chemical compound O=S1(=O)CCCCO1 MHYFEEDKONKGEB-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 229960001866 silicon dioxide Drugs 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical group FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical class N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 102100021669 Stromal cell-derived factor 1 Human genes 0.000 description 3
- 101710088580 Stromal cell-derived factor 1 Proteins 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- LUYQYZLEHLTPBH-UHFFFAOYSA-N perfluorobutanesulfonyl fluoride Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)S(F)(=O)=O LUYQYZLEHLTPBH-UHFFFAOYSA-N 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 description 3
- CCCYGFBNAZKKTO-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,4-nonafluoro-n-propylbutane-1-sulfonamide Chemical compound CCCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCCYGFBNAZKKTO-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 125000002015 acyclic group Chemical group 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000001767 cationic compounds Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005194 fractionation Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 150000002892 organic cations Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000967 suction filtration Methods 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XINQFOMFQFGGCQ-UHFFFAOYSA-L (2-dodecoxy-2-oxoethyl)-[6-[(2-dodecoxy-2-oxoethyl)-dimethylazaniumyl]hexyl]-dimethylazanium;dichloride Chemical compound [Cl-].[Cl-].CCCCCCCCCCCCOC(=O)C[N+](C)(C)CCCCCC[N+](C)(C)CC(=O)OCCCCCCCCCCCC XINQFOMFQFGGCQ-UHFFFAOYSA-L 0.000 description 1
- KFYRJJBUHYILSO-YFKPBYRVSA-N (2s)-2-amino-3-dimethylarsanylsulfanyl-3-methylbutanoic acid Chemical compound C[As](C)SC(C)(C)[C@@H](N)C(O)=O KFYRJJBUHYILSO-YFKPBYRVSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 1
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical compound [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000645 desinfectant Substances 0.000 description 1
- 235000013325 dietary fiber Nutrition 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910001411 inorganic cation Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001457 metallic cations Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 125000005003 perfluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 125000005005 perfluorohexyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- XTUSEBKMEQERQV-UHFFFAOYSA-N propan-2-ol;hydrate Chemical compound O.CC(C)O XTUSEBKMEQERQV-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical class C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical compound NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 150000008053 sultones Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/290,763 US6890452B2 (en) | 2002-11-08 | 2002-11-08 | Fluorinated surfactants for aqueous acid etch solutions |
| US10/290,763 | 2002-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1694940A CN1694940A (zh) | 2005-11-09 |
| CN1324111C true CN1324111C (zh) | 2007-07-04 |
Family
ID=32296841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038249278A Expired - Fee Related CN1324111C (zh) | 2002-11-08 | 2003-09-17 | 用于含水酸蚀刻溶液的氟化表面活性剂 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6890452B2 (ja) |
| EP (1) | EP1558698B1 (ja) |
| JP (1) | JP4481830B2 (ja) |
| KR (1) | KR101003931B1 (ja) |
| CN (1) | CN1324111C (ja) |
| AT (1) | ATE369409T1 (ja) |
| AU (1) | AU2003278831A1 (ja) |
| DE (1) | DE60315499T2 (ja) |
| WO (1) | WO2004044092A1 (ja) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| KR101117939B1 (ko) * | 2003-10-28 | 2012-02-29 | 사켐,인코포레이티드 | 세척액 및 에칭제 및 이의 사용 방법 |
| TW200533787A (en) * | 2004-02-25 | 2005-10-16 | Mitsubishi Gas Chemical Co | Etching composition for laminated film including reflective electrode and method for forming laminated wiring structure |
| US7294610B2 (en) * | 2004-03-03 | 2007-11-13 | 3M Innovative Properties Company | Fluorinated sulfonamide surfactants for aqueous cleaning solutions |
| CN101505729A (zh) * | 2005-03-14 | 2009-08-12 | 3M创新有限公司 | 用于药用制剂的生物相容性聚合物化合物 |
| US20070129273A1 (en) * | 2005-12-07 | 2007-06-07 | Clark Philip G | In situ fluoride ion-generating compositions and uses thereof |
| US7572848B2 (en) * | 2005-12-21 | 2009-08-11 | 3M Innovative Properties Company | Coatable composition |
| US7425374B2 (en) * | 2005-12-22 | 2008-09-16 | 3M Innovative Properties Company | Fluorinated surfactants |
| SG133443A1 (en) * | 2005-12-27 | 2007-07-30 | 3M Innovative Properties Co | Etchant formulations and uses thereof |
| US7629298B2 (en) * | 2006-02-21 | 2009-12-08 | 3M Innovative Properties Company | Sandstone having a modified wettability and a method for modifying the surface energy of sandstone |
| US7824755B2 (en) * | 2006-06-29 | 2010-11-02 | 3M Innovative Properties Company | Fluorinated leveling agents |
| US7569715B2 (en) * | 2006-07-05 | 2009-08-04 | 3M Innovative Properties Company | Compositions containing silanes |
| EP2081887A2 (en) * | 2006-09-01 | 2009-07-29 | Great Lakes Chemical Corporation | Production processes and systems, compositions, surfactants monomer units, metal complexes, phosphate esters, glycols, aqueous film forming foams and foam stabilizers |
| US20080119002A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US7651830B2 (en) * | 2007-06-01 | 2010-01-26 | 3M Innovative Properties Company | Patterned photoacid etching and articles therefrom |
| US8153019B2 (en) * | 2007-08-06 | 2012-04-10 | Micron Technology, Inc. | Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices |
| WO2010102013A2 (en) * | 2009-03-03 | 2010-09-10 | Akrion Systems Llc | Method for selective under-etching of porous silicon |
| CN101958367B (zh) * | 2010-07-14 | 2012-06-13 | 江苏韩华太阳能电池及应用工程技术研究中心有限公司 | 单晶硅太阳能电池表面微区可控修饰工艺 |
| CN101931030B (zh) * | 2010-07-14 | 2012-06-20 | 江苏韩华太阳能电池及应用工程技术研究中心有限公司 | 纳米改性高效率低成本多晶硅太阳能电池制备工艺 |
| EP2611881A4 (en) * | 2010-09-01 | 2017-08-30 | Basf Se | Aqueous acidic solution and etching solution and method for texturizing surface of single crystal and polycrystal silicon substrates |
| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| CN103270134B (zh) | 2010-12-21 | 2016-12-21 | 3M创新有限公司 | 用氟化胺处理含烃地层的方法 |
| MY161218A (en) * | 2011-01-25 | 2017-04-14 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
| CN103717706B (zh) | 2011-08-10 | 2015-09-23 | 3M创新有限公司 | 用于光致抗蚀剂冲洗剂溶液的全氟烷基磺酰胺表面活性剂 |
| CN102254814B (zh) * | 2011-08-16 | 2013-12-25 | 中国科学院电工研究所 | 一种氧化硅的选择性刻蚀溶液及其制备方法和应用 |
| WO2014070546A1 (en) * | 2012-10-31 | 2014-05-08 | Corning Incorporated | Foam etchant and methods for etching glass |
| JP6433730B2 (ja) * | 2014-09-08 | 2018-12-05 | 東芝メモリ株式会社 | 半導体装置の製造方法及び半導体製造装置 |
| US10017713B2 (en) | 2014-09-11 | 2018-07-10 | 3M Innovative Properties Company | Fluorinated surfactant containing compositions |
| DE102014013591A1 (de) | 2014-09-13 | 2016-03-17 | Jörg Acker | Verfahren zur Herstellung von Siliciumoberflächen mit niedriger Reflektivität |
| KR102628568B1 (ko) | 2015-07-16 | 2024-01-23 | 바스프 에스이 | 설포에스테르의 암모늄 염을 함유하는 결함 감소 헹굼 용액 |
| US11193059B2 (en) | 2016-12-13 | 2021-12-07 | Current Lighting Solutions, Llc | Processes for preparing color stable red-emitting phosphor particles having small particle size |
| CN108231999B (zh) * | 2017-12-29 | 2021-07-02 | 唐山国芯晶源电子有限公司 | 石英谐振器晶片的加工方法 |
| TW202035361A (zh) * | 2018-12-12 | 2020-10-01 | 美商3M新設資產公司 | 氟化胺氧化物界面活性劑 |
| CN114456094B (zh) * | 2020-11-10 | 2023-09-26 | 中国石油天然气股份有限公司 | 氟碳双子表面活性剂、助排剂及制备方法 |
| GB2603003A (en) * | 2021-01-25 | 2022-07-27 | Macdermid Inc | Method of etching a plastic component |
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| US4370254A (en) * | 1979-05-25 | 1983-01-25 | Bayer Aktiengesellschaft | Use of perfluoroalkane sulphonamide salts as surface active agents |
| EP0073863A1 (en) * | 1981-09-08 | 1983-03-16 | Dainippon Ink And Chemicals, Inc. | Fluorine-containing aminosulfonate |
| CN86103055A (zh) * | 1985-05-13 | 1986-11-26 | 阿兰德公司 | 含有环状氟化磺酸盐表面活性剂蚀刻溶液 |
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| GB1037857A (en) | 1963-07-11 | 1966-08-03 | Pennsalt Chemicals Corp | Method and composition for cleaning resin coated substrates |
| US4055458A (en) * | 1975-08-07 | 1977-10-25 | Bayer Aktiengesellschaft | Etching glass with HF and fluorine-containing surfactant |
| DE3038985A1 (de) | 1980-10-15 | 1982-05-27 | Bayer Ag, 5090 Leverkusen | Verfahren zum saeurepolieren von glas |
| JPS6039176A (ja) * | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
| JPS63283028A (ja) * | 1986-09-29 | 1988-11-18 | Hashimoto Kasei Kogyo Kk | 微細加工表面処理剤 |
| US5350489A (en) * | 1990-10-19 | 1994-09-27 | Purex Co., Ltd. | Treatment method of cleaning surface of plastic molded item |
| US5085786A (en) * | 1991-01-24 | 1992-02-04 | Minnesota Mining And Manufacturing Company | Aqueous film-forming foamable solution useful as fire extinguishing concentrate |
| US5587513A (en) * | 1992-11-27 | 1996-12-24 | Pohmer; Klaus | Polyether-substituted imide compounds and their use |
| EP0691676B1 (en) * | 1993-02-04 | 1999-05-12 | Daikin Industries, Limited | Wet-etching composition for semiconductors excellent in wettability |
| US5658962A (en) * | 1994-05-20 | 1997-08-19 | Minnesota Mining And Manufacturing Company | Omega-hydrofluoroalkyl ethers, precursor carboxylic acids and derivatives thereof, and their preparation and application |
| US5803956A (en) * | 1994-07-28 | 1998-09-08 | Hashimoto Chemical Company, Ltd. | Surface treating composition for micro processing |
| US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| JP3923097B2 (ja) * | 1995-03-06 | 2007-05-30 | 忠弘 大見 | 洗浄装置 |
| US5688884A (en) * | 1995-08-31 | 1997-11-18 | E. I. Du Pont De Nemours And Company | Polymerization process |
| AU2830997A (en) | 1996-06-06 | 1998-01-05 | Minnesota Mining And Manufacturing Company | Fire-fighting agents containing adsorbable fluorocarbon surfactants |
| US6348157B1 (en) * | 1997-06-13 | 2002-02-19 | Tadahiro Ohmi | Cleaning method |
| US6552090B1 (en) * | 1997-09-15 | 2003-04-22 | 3M Innovative Properties Company | Perfluoroalkyl haloalkyl ethers and compositions and applications thereof |
| US6807824B1 (en) * | 1999-04-27 | 2004-10-26 | Hiroshi Miwa | Glass etching composition and method for frosting using the same |
| US6600557B1 (en) * | 1999-05-21 | 2003-07-29 | Memc Electronic Materials, Inc. | Method for the detection of processing-induced defects in a silicon wafer |
| DE60042561D1 (de) | 1999-10-27 | 2009-08-27 | 3M Innovative Properties Co | Fluorochemische sulfonamide tenside |
| US6310018B1 (en) * | 2000-03-31 | 2001-10-30 | 3M Innovative Properties Company | Fluorinated solvent compositions containing hydrogen fluoride |
| US20020089044A1 (en) * | 2001-01-09 | 2002-07-11 | 3M Innovative Properties Company | Hermetic mems package with interlocking layers |
| JP2002256460A (ja) * | 2001-02-09 | 2002-09-11 | Nippon Parkerizing Co Ltd | アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法 |
| US20020142619A1 (en) * | 2001-03-30 | 2002-10-03 | Memc Electronic Materials, Inc. | Solution composition and process for etching silicon |
| US6555510B2 (en) * | 2001-05-10 | 2003-04-29 | 3M Innovative Properties Company | Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor |
| KR20040029380A (ko) * | 2001-07-25 | 2004-04-06 | 시바 스페셜티 케미칼스 홀딩 인크. | 퍼플루오로알킬 치환된 아민, 산, 아미노산 및 티오에테르산 |
| US7169323B2 (en) | 2002-11-08 | 2007-01-30 | 3M Innovative Properties Company | Fluorinated surfactants for buffered acid etch solutions |
| US6890452B2 (en) | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
-
2002
- 2002-11-08 US US10/290,763 patent/US6890452B2/en not_active Expired - Lifetime
-
2003
- 2003-09-17 AT AT03770349T patent/ATE369409T1/de not_active IP Right Cessation
- 2003-09-17 AU AU2003278831A patent/AU2003278831A1/en not_active Abandoned
- 2003-09-17 JP JP2004551466A patent/JP4481830B2/ja not_active Expired - Fee Related
- 2003-09-17 KR KR1020057008094A patent/KR101003931B1/ko active IP Right Grant
- 2003-09-17 DE DE60315499T patent/DE60315499T2/de not_active Expired - Lifetime
- 2003-09-17 WO PCT/US2003/029262 patent/WO2004044092A1/en active IP Right Grant
- 2003-09-17 CN CNB038249278A patent/CN1324111C/zh not_active Expired - Fee Related
- 2003-09-17 EP EP03770349A patent/EP1558698B1/en not_active Expired - Lifetime
-
2005
- 2005-03-16 US US11/081,196 patent/US7101492B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4370254A (en) * | 1979-05-25 | 1983-01-25 | Bayer Aktiengesellschaft | Use of perfluoroalkane sulphonamide salts as surface active agents |
| EP0073863A1 (en) * | 1981-09-08 | 1983-03-16 | Dainippon Ink And Chemicals, Inc. | Fluorine-containing aminosulfonate |
| CN86103055A (zh) * | 1985-05-13 | 1986-11-26 | 阿兰德公司 | 含有环状氟化磺酸盐表面活性剂蚀刻溶液 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050181620A1 (en) | 2005-08-18 |
| WO2004044092A1 (en) | 2004-05-27 |
| US7101492B2 (en) | 2006-09-05 |
| DE60315499D1 (de) | 2007-09-20 |
| ATE369409T1 (de) | 2007-08-15 |
| KR20050072796A (ko) | 2005-07-12 |
| AU2003278831A1 (en) | 2004-06-03 |
| US6890452B2 (en) | 2005-05-10 |
| EP1558698A1 (en) | 2005-08-03 |
| KR101003931B1 (ko) | 2010-12-30 |
| EP1558698B1 (en) | 2007-08-08 |
| JP4481830B2 (ja) | 2010-06-16 |
| CN1694940A (zh) | 2005-11-09 |
| US20040094510A1 (en) | 2004-05-20 |
| DE60315499T2 (de) | 2008-04-30 |
| JP2006505668A (ja) | 2006-02-16 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
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