CN1311351A - 含钌金属的去除剂及其使用方法 - Google Patents
含钌金属的去除剂及其使用方法 Download PDFInfo
- Publication number
- CN1311351A CN1311351A CN01104252A CN01104252A CN1311351A CN 1311351 A CN1311351 A CN 1311351A CN 01104252 A CN01104252 A CN 01104252A CN 01104252 A CN01104252 A CN 01104252A CN 1311351 A CN1311351 A CN 1311351A
- Authority
- CN
- China
- Prior art keywords
- remover
- acid
- containing metal
- ruthenium
- ruthenium containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052707 ruthenium Inorganic materials 0.000 title claims description 94
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims description 93
- 229910052751 metal Inorganic materials 0.000 title claims description 61
- 239000002184 metal Substances 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 13
- 238000005530 etching Methods 0.000 title description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002253 acid Substances 0.000 claims abstract description 31
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 51
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 15
- 150000003839 salts Chemical class 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 9
- 235000006408 oxalic acid Nutrition 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- LQCIDLXXSFUYSA-UHFFFAOYSA-N cerium(4+);tetranitrate Chemical compound [Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O LQCIDLXXSFUYSA-UHFFFAOYSA-N 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000000428 dust Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 10
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 10
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 230000001464 adherent effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- OZECDDHOAMNMQI-UHFFFAOYSA-H cerium(3+);trisulfate Chemical compound [Ce+3].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OZECDDHOAMNMQI-UHFFFAOYSA-H 0.000 description 2
- 229910000333 cerium(III) sulfate Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- XUXNAKZDHHEHPC-UHFFFAOYSA-M sodium bromate Chemical compound [Na+].[O-]Br(=O)=O XUXNAKZDHHEHPC-UHFFFAOYSA-M 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- ing And Chemical Polishing (AREA)
- Detergent Compositions (AREA)
Abstract
Description
1号 | 2号 | 3号 | 4号 | ||
氧化剂 | CAN | 10 | 10 | 10 | 10 |
酸 | 硝酸 | 0 | 5 | 10 | 30 |
溶解速率埃/分钟 | 40℃ | - | - | - | - |
50℃ | - | - | - | - | |
60℃ | - | 30 | 27 | 28 |
5号 | 6号 | 7号 | 8号 | 9号 | ||
氧化剂 | CAN | 20 | 20 | 20 | 20 | 20 |
酸 | 硝酸 | 0 | 5 | 10 | 20 | 30 |
溶解速率埃/分钟 | 40℃ | 370 | 100 | - | - | 44 |
50℃ | 280 | 320 | - | - | 95 | |
60℃ | 230 | 470 | 105 | 158 | 146 |
10号 | 11号 | 12号 | 13号 | ||
氧化剂 | CAN | 30 | 30 | 30 | 30 |
酸 | 硝酸 | 0 | 5 | 10 | 20 |
溶解速率埃/分钟 | 40℃ | 430 | 500 | 258 | 172 |
50℃ | 750 | 650 | 380 | 254 | |
60℃ | 960 | 950 | 522 | 316 |
14号 | 15号 | 16号 | 17号 | 18号 | ||
氧化剂 | CAN | 20 | 30 | 30 | 30 | 30 |
酸 | 高氯酸 | 5 | 5 | |||
盐酸 | 5 | |||||
硫酸 | 5 | |||||
磷酸 | 1 | |||||
溶解速率埃/分钟 | 40℃ | 95 | 630 | - | - | - |
50℃ | 380 | 860 | - | - | - | |
60℃ | 500 | 950 | - | - | - |
19号 | 20号 | ||
氧化剂 | 硫酸铈 | 20 | 20 |
酸 | 硝酸 | 5 | |
硫酸 | 5 | ||
溶解速率埃/分钟 | 40℃ | <10 | <10 |
50℃ | <10 | <10 | |
60℃ | <10 | <10 |
1号 | 22号 | 23号 | 24号 | ||
氧化剂 | 硫酸铈 | 8 | 8 | ||
硝酸铁 | 20 | ||||
溴酸钠 | 20 | ||||
酸 | 硝酸 | 5 | 5 | 10 | |
硫酸 | 8 | ||||
溶解速率埃/分钟 | 40℃ | 0 | 0 | <10 | <10 |
50℃ | 0 | 0 | <10 | <10 | |
60℃ | 0 | 0 | <10 | <10 |
25号 | 26号 | ||
氧化剂 | CAN | 30 | 20 |
酸 | 硝酸 | 5 | |
高氯酸 | 5 | ||
乙酸 | 5 | ||
溶解速率埃/分钟 | 40℃ | 540 | 430 |
50℃ | 820 | 800 | |
60℃ | 900 | 920 |
27号 | 28号 | 29号 | 30号 | 31号 | ||
氧化剂 | CAN | 20 | 30 | 30 | 30 | 20 |
酸 | 硝酸 | 5 | 5 | 10 | 5 | |
高氯酸 | 5 | |||||
乙酸 | 5 | |||||
溶解速率埃/分钟 | 40℃ | <10 | <10 | <10 | <10 | <10 |
50℃ | <10 | 150 | 280 | 350 | 130 | |
60℃ | 370 | 640 | 540 | 590 | 400 |
氧化剂 | 酸 | 搅拌 | 25℃ | 30℃ | 40℃ | |
1号 | CAN(10) | 硝酸(5) | 否 | 100 | 100 | 30 |
是 | 800 | 850 | 1000 | |||
2号 | CAN(10) | 硝酸(10) | 否 | 50 | 70 | 100 |
是 | 480 | 550 | 600 | |||
3号 | CNA(20) | 硝酸(5) | 否 | 100 | 320 | 470 |
是 | 1200 | 1350 | 1700 | |||
4号 | CAN(20) | 硝酸(10) | 否 | 100 | 110 | 150 |
是 | 480 | 630 | 960 |
1号 | 2号 | 3号 | 4号 | 5号 | ||
清洗剂 | 氢氟酸 | 0.5 | 0.5 | |||
硝酸 | 5 | 5 | ||||
高氯酸 | 5 | |||||
草酸 | 0.34 | |||||
残留铈(×1010原子/cm2) | 62 | 80 | 146 | 0.8 | 70 |
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000046150A JP4510979B2 (ja) | 2000-02-23 | 2000-02-23 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
JP046150/2000 | 2000-02-23 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101325743A Division CN101538716B (zh) | 2000-02-23 | 2001-02-23 | 含钌金属的去除剂及其使用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1311351A true CN1311351A (zh) | 2001-09-05 |
CN100491594C CN100491594C (zh) | 2009-05-27 |
Family
ID=18568625
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101325743A Expired - Lifetime CN101538716B (zh) | 2000-02-23 | 2001-02-23 | 含钌金属的去除剂及其使用方法 |
CNB011042524A Expired - Lifetime CN100491594C (zh) | 2000-02-23 | 2001-02-23 | 含钌金属的去除剂及其使用方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101325743A Expired - Lifetime CN101538716B (zh) | 2000-02-23 | 2001-02-23 | 含钌金属的去除剂及其使用方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20010023701A1 (zh) |
EP (1) | EP1130636B1 (zh) |
JP (1) | JP4510979B2 (zh) |
KR (1) | KR100416889B1 (zh) |
CN (2) | CN101538716B (zh) |
DE (1) | DE60113170T2 (zh) |
TW (1) | TW527440B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI790345B (zh) * | 2018-02-05 | 2023-01-21 | 日商富士軟片股份有限公司 | 基板的處理方法、半導體裝置的製造方法、基板處理用套組 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6143192A (en) * | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
US6537461B1 (en) * | 2000-04-24 | 2003-03-25 | Hitachi, Ltd. | Process for treating solid surface and substrate surface |
JP4510979B2 (ja) * | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
JP3761457B2 (ja) | 2001-12-04 | 2006-03-29 | Necエレクトロニクス株式会社 | 半導体基板の薬液処理装置 |
US6730592B2 (en) * | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
US6884723B2 (en) * | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
US20030119316A1 (en) * | 2001-12-21 | 2003-06-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
US7049237B2 (en) * | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
US7121926B2 (en) | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
JP4010819B2 (ja) | 2002-02-04 | 2007-11-21 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR100672933B1 (ko) * | 2003-06-04 | 2007-01-23 | 삼성전자주식회사 | 세정 용액 및 이를 이용한 반도체 소자의 세정 방법 |
EP2090675B1 (en) * | 2008-01-31 | 2015-05-20 | Imec | Defect etching of germanium |
JP6798045B2 (ja) | 2018-01-16 | 2020-12-09 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
JP7219061B2 (ja) | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
TW202035355A (zh) | 2019-02-13 | 2020-10-01 | 日商德山股份有限公司 | 含有鎓鹽的半導體晶圓之處理液 |
JP2023078483A (ja) * | 2020-03-18 | 2023-06-07 | 富士フイルム株式会社 | 基板の処理方法 |
US20220298416A1 (en) | 2020-08-07 | 2022-09-22 | Tokuyama Corporation | Treatment liquid for semiconductor wafers |
US20220411937A1 (en) | 2020-11-26 | 2022-12-29 | Tokuyama Corporation | Semiconductor wafer treatment liquid and prodution method thereof |
KR102658517B1 (ko) | 2020-12-18 | 2024-04-17 | 가부시끼가이샤 도꾸야마 | 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 |
KR20230104741A (ko) | 2020-12-18 | 2023-07-10 | 가부시끼가이샤 도꾸야마 | 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US4113486A (en) * | 1973-10-22 | 1978-09-12 | Fuji Photo Film Co., Ltd. | Method for producing a photomask |
JPS5177404A (zh) * | 1974-12-26 | 1976-07-05 | Fuji Photo Film Co Ltd | |
US4080246A (en) | 1976-06-29 | 1978-03-21 | Gaf Corporation | Novel etching composition and method for using same |
DE3583583D1 (de) * | 1984-11-17 | 1991-08-29 | Daikin Ind Ltd | Aetzzusammensetzung. |
JPS62133087A (ja) * | 1985-12-05 | 1987-06-16 | Nippon Engeruharudo Kk | 貴金属固着物剥離剤 |
JPH077757B2 (ja) | 1987-09-28 | 1995-01-30 | 三菱電機株式会社 | クロム膜のパターニング方法 |
US4976810A (en) * | 1990-03-06 | 1990-12-11 | Kabushiki Kaisha Toshiba | Method of forming pattern and apparatus for implementing the same |
US5118356A (en) * | 1990-11-19 | 1992-06-02 | Eastman Kodak Company | Process for cleaning a photographic processing device |
KR100239417B1 (ko) * | 1996-12-03 | 2000-01-15 | 김영환 | 반도체 소자의 커패시터 및 그의 제조방법 |
JP3366238B2 (ja) | 1997-10-27 | 2003-01-14 | 鹿児島日本電気株式会社 | クロム膜のエッチング方法 |
US6143192A (en) * | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
JP4510979B2 (ja) * | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
JP3645144B2 (ja) * | 2000-02-24 | 2005-05-11 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2000
- 2000-02-23 JP JP2000046150A patent/JP4510979B2/ja not_active Expired - Lifetime
-
2001
- 2001-02-20 EP EP01104044A patent/EP1130636B1/en not_active Expired - Lifetime
- 2001-02-20 DE DE60113170T patent/DE60113170T2/de not_active Expired - Lifetime
- 2001-02-21 US US09/788,555 patent/US20010023701A1/en not_active Abandoned
- 2001-02-22 TW TW090104111A patent/TW527440B/zh not_active IP Right Cessation
- 2001-02-23 KR KR10-2001-0009123A patent/KR100416889B1/ko active IP Right Grant
- 2001-02-23 CN CN2009101325743A patent/CN101538716B/zh not_active Expired - Lifetime
- 2001-02-23 CN CNB011042524A patent/CN100491594C/zh not_active Expired - Lifetime
-
2002
- 2002-04-17 US US10/123,197 patent/US6468357B1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI790345B (zh) * | 2018-02-05 | 2023-01-21 | 日商富士軟片股份有限公司 | 基板的處理方法、半導體裝置的製造方法、基板處理用套組 |
Also Published As
Publication number | Publication date |
---|---|
EP1130636A3 (en) | 2003-07-23 |
DE60113170T2 (de) | 2006-07-13 |
US6468357B1 (en) | 2002-10-22 |
JP4510979B2 (ja) | 2010-07-28 |
US20010023701A1 (en) | 2001-09-27 |
CN101538716A (zh) | 2009-09-23 |
EP1130636A2 (en) | 2001-09-05 |
JP2001234373A (ja) | 2001-08-31 |
CN100491594C (zh) | 2009-05-27 |
KR100416889B1 (ko) | 2004-02-05 |
EP1130636B1 (en) | 2005-09-07 |
DE60113170D1 (de) | 2005-10-13 |
CN101538716B (zh) | 2011-02-09 |
TW527440B (en) | 2003-04-11 |
KR20010085498A (ko) | 2001-09-07 |
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