KR100416889B1 - 루테늄 함유 금속의 제거제 및 그 사용 - Google Patents
루테늄 함유 금속의 제거제 및 그 사용 Download PDFInfo
- Publication number
- KR100416889B1 KR100416889B1 KR10-2001-0009123A KR20010009123A KR100416889B1 KR 100416889 B1 KR100416889 B1 KR 100416889B1 KR 20010009123 A KR20010009123 A KR 20010009123A KR 100416889 B1 KR100416889 B1 KR 100416889B1
- Authority
- KR
- South Korea
- Prior art keywords
- remover
- ruthenium
- acid
- containing metal
- semiconductor substrate
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- ing And Chemical Polishing (AREA)
- Detergent Compositions (AREA)
Abstract
Description
Claims (14)
- 루테늄 함유 금속의 제거제에 있어서,(a) 세륨(IV) 질산염과,(b) 질산, 과염소산 및 아세트산을 포함하는 군에서 선택된 적어도 하나의 산을 포함하는 것을 특징으로 하는 제거제.
- 제1항에 있어서, 반도체 기판에 부착된 루테늄 함유 금속을 제거하는데 사용되는 것을 특징으로 하는 제거제.
- 제1항에 있어서, 루테늄 함유 금속이 소자 형성 영역이외의 다른 영역에 부착된 반도체 기판을 세정하는데 사용되는 것을 특징으로 하는 제거제.
- 제2항에 있어서, 반도체 기판은 실리콘 기판인 것을 특징으로 하는 제거제.
- 제3항에 있어서, 반도체 기판은 실리콘 기판인 것을 특징으로 하는 제거제.
- 제1항에 있어서, (a) 성분을 5 내지 35 중량퍼센트 포함하고 (b) 성분을 1 내지 30 중량퍼센트 포함하는 것을 특징으로 하는 제거제.
- 제2항에 있어서, (a) 성분을 5 내지 35 중량퍼센트 포함하고 (b) 성분을 1 내지 30 중량퍼센트 포함하는 것을 특징으로 하는 제거제.
- 제3항에 있어서, (a) 성분을 5 내지 35 중량퍼센트 포함하고 (b) 성분을 1 내지 30 중량퍼센트 포함하는 것을 특징으로 하는 제거제.
- 반도체 기판에 부착된 루테늄 함유 금속을 제거제에 의해 제거하는 방법에 있어서,상기 제거제는(a) 세륨(IV) 질산염과,(b) 질산, 과염소산 및 아세트산을 포함하는 군에서 선택된 적어도 하나의 산을 포함하는 것을 특징으로 하는 방법.
- 반도체 기판 상의 소자 형성 영역이외의 다른 영역에 부착된 루테늄 함유 금속을 제거제에 의해 제거하는 방법에 있어서,상기 제거제는(a) 세륨(IV) 질산염과,(b) 질산, 과염소산 및 아세트산을 포함하는 군에서 선택된 적어도 하나의 산을 포함하는 것을 특징으로 하는 방법.
- 루테늄 함유 금속의 제거제를 사용하는 방법에 있어서,제1항에 따른 제거제로 제거한 후에, 제거제 잔존물을 제거하기 위해 플루오르수소산, 질산, 과염소산 및 옥살산 중 적어도 하나를 함유하는 액체에 의해 기판이 세정되는 것을 특징으로 하는 방법.
- 루테늄 함유 금속의 제거제를 사용하는 방법에 있어서,제2항에 따른 제거제로 제거한 후에, 제거제 잔존물을 제거하기 위해 플루오르수소산, 질산, 과염소산 및 옥살산 중 적어도 하나를 함유하는 액체에 의해 기판이 세정되는 것을 특징으로 하는 방법.
- 루테늄 함유 금속의 제거제를 사용하는 방법에 있어서,제3항에 따른 제거제로 제거한 후에, 제거제 잔존물을 제거하기 위해 플루오르수소산, 질산, 과염소산 및 옥살산 중 적어도 하나를 함유하는 액체에 의해 기판이 세정되는 것을 특징으로 하는 방법.
- 루테늄 함유 금속을 제거하는 공정에 있어서,반도체 기판 상의 소자 형성 영역 내에 루테늄 막을 부착시키는 단계와,(a) 세륨(IV) 질산염과, (b) 소자 형성 영역이외의 다른 영역에 부착된 루테늄 함유 금속을 제거하기 위해 사실상 수평의 반도체 기판을 회전시키면서, 질산, 과염소산 및 아세트산을 포함하는 군에서 선택된 적어도 하나의 산을 반도체 기판상의 소정 영역에 분무하는 단계를 포함하는 것을 특징으로 하는 공정.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000046150A JP4510979B2 (ja) | 2000-02-23 | 2000-02-23 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
JP2000-46150 | 2000-02-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010085498A KR20010085498A (ko) | 2001-09-07 |
KR100416889B1 true KR100416889B1 (ko) | 2004-02-05 |
Family
ID=18568625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0009123A KR100416889B1 (ko) | 2000-02-23 | 2001-02-23 | 루테늄 함유 금속의 제거제 및 그 사용 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20010023701A1 (ko) |
EP (1) | EP1130636B1 (ko) |
JP (1) | JP4510979B2 (ko) |
KR (1) | KR100416889B1 (ko) |
CN (2) | CN101538716B (ko) |
DE (1) | DE60113170T2 (ko) |
TW (1) | TW527440B (ko) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6143192A (en) * | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
US6537461B1 (en) * | 2000-04-24 | 2003-03-25 | Hitachi, Ltd. | Process for treating solid surface and substrate surface |
JP4510979B2 (ja) * | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
JP3761457B2 (ja) | 2001-12-04 | 2006-03-29 | Necエレクトロニクス株式会社 | 半導体基板の薬液処理装置 |
US6730592B2 (en) * | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
US6884723B2 (en) * | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
US20030119316A1 (en) * | 2001-12-21 | 2003-06-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using oxidizing agents |
US7049237B2 (en) * | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
US7121926B2 (en) | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
JP4010819B2 (ja) | 2002-02-04 | 2007-11-21 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR100672933B1 (ko) * | 2003-06-04 | 2007-01-23 | 삼성전자주식회사 | 세정 용액 및 이를 이용한 반도체 소자의 세정 방법 |
EP2090675B1 (en) * | 2008-01-31 | 2015-05-20 | Imec | Defect etching of germanium |
JP6798045B2 (ja) | 2018-01-16 | 2020-12-09 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
JP6992095B2 (ja) * | 2018-02-05 | 2022-01-13 | 富士フイルム株式会社 | 基板の処理方法、半導体装置の製造方法、基板処理用キット |
JP7219061B2 (ja) | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
TW202035355A (zh) | 2019-02-13 | 2020-10-01 | 日商德山股份有限公司 | 含有鎓鹽的半導體晶圓之處理液 |
JP2023078483A (ja) * | 2020-03-18 | 2023-06-07 | 富士フイルム株式会社 | 基板の処理方法 |
US20220298416A1 (en) | 2020-08-07 | 2022-09-22 | Tokuyama Corporation | Treatment liquid for semiconductor wafers |
US20220411937A1 (en) | 2020-11-26 | 2022-12-29 | Tokuyama Corporation | Semiconductor wafer treatment liquid and prodution method thereof |
KR102658517B1 (ko) | 2020-12-18 | 2024-04-17 | 가부시끼가이샤 도꾸야마 | 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 |
KR20230104741A (ko) | 2020-12-18 | 2023-07-10 | 가부시끼가이샤 도꾸야마 | 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 |
Family Cites Families (13)
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US4113486A (en) * | 1973-10-22 | 1978-09-12 | Fuji Photo Film Co., Ltd. | Method for producing a photomask |
JPS5177404A (ko) * | 1974-12-26 | 1976-07-05 | Fuji Photo Film Co Ltd | |
US4080246A (en) | 1976-06-29 | 1978-03-21 | Gaf Corporation | Novel etching composition and method for using same |
DE3583583D1 (de) * | 1984-11-17 | 1991-08-29 | Daikin Ind Ltd | Aetzzusammensetzung. |
JPS62133087A (ja) * | 1985-12-05 | 1987-06-16 | Nippon Engeruharudo Kk | 貴金属固着物剥離剤 |
JPH077757B2 (ja) | 1987-09-28 | 1995-01-30 | 三菱電機株式会社 | クロム膜のパターニング方法 |
US4976810A (en) * | 1990-03-06 | 1990-12-11 | Kabushiki Kaisha Toshiba | Method of forming pattern and apparatus for implementing the same |
US5118356A (en) * | 1990-11-19 | 1992-06-02 | Eastman Kodak Company | Process for cleaning a photographic processing device |
KR100239417B1 (ko) * | 1996-12-03 | 2000-01-15 | 김영환 | 반도체 소자의 커패시터 및 그의 제조방법 |
JP3366238B2 (ja) | 1997-10-27 | 2003-01-14 | 鹿児島日本電気株式会社 | クロム膜のエッチング方法 |
US6143192A (en) * | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
JP4510979B2 (ja) * | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
JP3645144B2 (ja) * | 2000-02-24 | 2005-05-11 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2000
- 2000-02-23 JP JP2000046150A patent/JP4510979B2/ja not_active Expired - Lifetime
-
2001
- 2001-02-20 EP EP01104044A patent/EP1130636B1/en not_active Expired - Lifetime
- 2001-02-20 DE DE60113170T patent/DE60113170T2/de not_active Expired - Lifetime
- 2001-02-21 US US09/788,555 patent/US20010023701A1/en not_active Abandoned
- 2001-02-22 TW TW090104111A patent/TW527440B/zh not_active IP Right Cessation
- 2001-02-23 KR KR10-2001-0009123A patent/KR100416889B1/ko active IP Right Grant
- 2001-02-23 CN CN2009101325743A patent/CN101538716B/zh not_active Expired - Lifetime
- 2001-02-23 CN CNB011042524A patent/CN100491594C/zh not_active Expired - Lifetime
-
2002
- 2002-04-17 US US10/123,197 patent/US6468357B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1130636A3 (en) | 2003-07-23 |
DE60113170T2 (de) | 2006-07-13 |
US6468357B1 (en) | 2002-10-22 |
JP4510979B2 (ja) | 2010-07-28 |
US20010023701A1 (en) | 2001-09-27 |
CN101538716A (zh) | 2009-09-23 |
EP1130636A2 (en) | 2001-09-05 |
JP2001234373A (ja) | 2001-08-31 |
CN100491594C (zh) | 2009-05-27 |
EP1130636B1 (en) | 2005-09-07 |
DE60113170D1 (de) | 2005-10-13 |
CN101538716B (zh) | 2011-02-09 |
CN1311351A (zh) | 2001-09-05 |
TW527440B (en) | 2003-04-11 |
KR20010085498A (ko) | 2001-09-07 |
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