CN1307721C - 半导体集成电路装置及其制造方法 - Google Patents
半导体集成电路装置及其制造方法 Download PDFInfo
- Publication number
- CN1307721C CN1307721C CNB97102023XA CN97102023A CN1307721C CN 1307721 C CN1307721 C CN 1307721C CN B97102023X A CNB97102023X A CN B97102023XA CN 97102023 A CN97102023 A CN 97102023A CN 1307721 C CN1307721 C CN 1307721C
- Authority
- CN
- China
- Prior art keywords
- film
- interconnection layer
- interconnection
- misfet
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims description 84
- 238000000034 method Methods 0.000 title claims description 50
- 230000002093 peripheral effect Effects 0.000 claims abstract description 103
- 239000003990 capacitor Substances 0.000 claims description 91
- 238000003860 storage Methods 0.000 claims description 90
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 53
- 229920005591 polysilicon Polymers 0.000 claims description 53
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 51
- 230000015572 biosynthetic process Effects 0.000 claims description 47
- 229910052721 tungsten Inorganic materials 0.000 claims description 45
- 239000010937 tungsten Substances 0.000 claims description 44
- 239000004020 conductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 26
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 26
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 23
- -1 tungsten nitride Chemical class 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 62
- 229910052814 silicon oxide Inorganic materials 0.000 description 62
- 238000005530 etching Methods 0.000 description 39
- 229910052581 Si3N4 Inorganic materials 0.000 description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 37
- 230000003647 oxidation Effects 0.000 description 36
- 238000007254 oxidation reaction Methods 0.000 description 36
- 238000005229 chemical vapour deposition Methods 0.000 description 26
- 239000012535 impurity Substances 0.000 description 26
- 150000002500 ions Chemical class 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 20
- 125000006850 spacer group Chemical group 0.000 description 18
- 239000000725 suspension Substances 0.000 description 16
- 239000003870 refractory metal Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP003648/96 | 1996-01-12 | ||
JP364896 | 1996-01-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1162845A CN1162845A (zh) | 1997-10-22 |
CN1307721C true CN1307721C (zh) | 2007-03-28 |
Family
ID=11563307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB97102023XA Expired - Lifetime CN1307721C (zh) | 1996-01-12 | 1997-01-10 | 半导体集成电路装置及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US6150689A (zh) |
KR (1) | KR100420250B1 (zh) |
CN (1) | CN1307721C (zh) |
MY (1) | MY124093A (zh) |
SG (1) | SG54456A1 (zh) |
TW (1) | TW326570B (zh) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6744091B1 (en) * | 1995-01-31 | 2004-06-01 | Fujitsu Limited | Semiconductor storage device with self-aligned opening and method for fabricating the same |
SG54456A1 (en) * | 1996-01-12 | 1998-11-16 | Hitachi Ltd | Semconductor integrated circuit device and method for manufacturing the same |
JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
US6255685B1 (en) * | 1996-11-22 | 2001-07-03 | Sony Corporation | Semiconductor device and method of manufacturing the same |
KR100295240B1 (ko) * | 1997-04-24 | 2001-11-30 | 마찌다 가쯔히꼬 | 반도체장치 |
US6838320B2 (en) * | 2000-08-02 | 2005-01-04 | Renesas Technology Corp. | Method for manufacturing a semiconductor integrated circuit device |
TW408433B (en) * | 1997-06-30 | 2000-10-11 | Hitachi Ltd | Method for fabricating semiconductor integrated circuit |
JP3919921B2 (ja) * | 1997-09-26 | 2007-05-30 | 三菱電機株式会社 | 半導体装置 |
JP3599548B2 (ja) * | 1997-12-18 | 2004-12-08 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
US6329681B1 (en) * | 1997-12-18 | 2001-12-11 | Yoshitaka Nakamura | Semiconductor integrated circuit device and method of manufacturing the same |
JP3686248B2 (ja) * | 1998-01-26 | 2005-08-24 | 株式会社日立製作所 | 半導体集積回路装置およびその製造方法 |
JP3499752B2 (ja) * | 1998-08-20 | 2004-02-23 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP2000156480A (ja) * | 1998-09-03 | 2000-06-06 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
KR100319623B1 (ko) | 1999-05-18 | 2002-01-05 | 김영환 | 디램 셀 어레이 및 그 제조방법 |
JP3911585B2 (ja) * | 1999-05-18 | 2007-05-09 | 富士通株式会社 | 半導体装置およびその製造方法 |
JP3250664B2 (ja) * | 1999-05-25 | 2002-01-28 | 日本電気株式会社 | 半導体記憶素子の製造方法 |
JP2001044386A (ja) * | 1999-07-27 | 2001-02-16 | Mitsubishi Electric Corp | 半導体記憶装置及びその製造方法 |
JP2001102450A (ja) * | 1999-10-01 | 2001-04-13 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US6611010B2 (en) * | 1999-12-03 | 2003-08-26 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2001223268A (ja) * | 2000-02-07 | 2001-08-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2001244436A (ja) * | 2000-03-01 | 2001-09-07 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6420250B1 (en) * | 2000-03-03 | 2002-07-16 | Micron Technology, Inc. | Methods of forming portions of transistor structures, methods of forming array peripheral circuitry, and structures comprising transistor gates |
KR100364798B1 (ko) * | 2000-04-03 | 2002-12-16 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 제조 방법 |
KR100390952B1 (ko) * | 2000-06-28 | 2003-07-10 | 주식회사 하이닉스반도체 | 커패시터 제조 방법 |
US6555450B2 (en) * | 2000-10-04 | 2003-04-29 | Samsung Electronics Co., Ltd. | Contact forming method for semiconductor device |
KR100386109B1 (ko) * | 2000-11-08 | 2003-06-02 | 삼성전자주식회사 | 2단 메탈콘택구조를 가진 반도체 메모리 장치 및 그제조방법 |
JP4053232B2 (ja) * | 2000-11-20 | 2008-02-27 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
KR100346841B1 (ko) | 2000-11-23 | 2002-08-03 | 삼성전자 주식회사 | 저항 소자를 구비하는 반도체 집적 회로 및 그의 제조 방법 |
US6545339B2 (en) | 2001-01-12 | 2003-04-08 | International Business Machines Corporation | Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication |
JP2003007854A (ja) * | 2001-06-22 | 2003-01-10 | Nec Corp | 半導体記憶装置及びその製造方法 |
CN100336226C (zh) * | 2001-12-14 | 2007-09-05 | 株式会社日立制作所 | 半导体器件 |
US7126200B2 (en) * | 2003-02-18 | 2006-10-24 | Micron Technology, Inc. | Integrated circuits with contemporaneously formed array electrodes and logic interconnects |
JP4658486B2 (ja) * | 2003-06-30 | 2011-03-23 | ルネサスエレクトロニクス株式会社 | 半導体装置とその製造方法 |
KR100705937B1 (ko) * | 2003-12-19 | 2007-04-11 | 에스티마이크로일렉트로닉스 엔.브이. | 실리콘 질화막의 스트레스를 방지 및 완충하는 패드구조를 구비한 반도체 장치 |
US20050167733A1 (en) * | 2004-02-02 | 2005-08-04 | Advanced Micro Devices, Inc. | Memory device and method of manufacture |
US7279379B2 (en) * | 2004-04-26 | 2007-10-09 | Micron Technology, Inc. | Methods of forming memory arrays; and methods of forming contacts to bitlines |
US9236383B2 (en) * | 2004-04-27 | 2016-01-12 | Micron Technology, Inc. | Method and apparatus for fabricating a memory device with a dielectric etch stop layer |
US7605033B2 (en) * | 2004-09-01 | 2009-10-20 | Micron Technology, Inc. | Low resistance peripheral local interconnect contacts with selective wet strip of titanium |
US7034408B1 (en) * | 2004-12-07 | 2006-04-25 | Infineon Technologies, Ag | Memory device and method of manufacturing a memory device |
KR100607193B1 (ko) * | 2004-12-24 | 2006-08-01 | 삼성전자주식회사 | 게이트 패턴의 상부에 적어도 하나의 저항 패턴을 갖는플레시 메모리들 및 그 형성방법들 |
KR100652409B1 (ko) * | 2005-05-06 | 2006-12-01 | 삼성전자주식회사 | 콘택이 구비된 반도체소자 및 그 제조방법 |
CN101213655B (zh) * | 2005-07-05 | 2010-12-08 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
JP2007103620A (ja) * | 2005-10-04 | 2007-04-19 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法ならびにその配線装置 |
KR100753049B1 (ko) | 2005-11-28 | 2007-08-30 | 주식회사 하이닉스반도체 | 반도체소자의 스토리지노드콘택플러그 형성 방법 |
KR100875654B1 (ko) * | 2006-09-28 | 2008-12-26 | 주식회사 하이닉스반도체 | 반도체 소자의 스토리지노드콘택 형성 방법 |
US7745876B2 (en) | 2007-02-21 | 2010-06-29 | Samsung Electronics Co., Ltd. | Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same |
KR100880323B1 (ko) * | 2007-05-11 | 2009-01-28 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조 방법 |
JP5674263B2 (ja) * | 2007-08-21 | 2015-02-25 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 相変化メモリ装置及び半導体記憶装置 |
US20090057784A1 (en) * | 2007-09-04 | 2009-03-05 | Applied Intellectual Propersties Co., Ltd. | Extension tailored device |
US20100155858A1 (en) * | 2007-09-04 | 2010-06-24 | Yuan-Feng Chen | Asymmetric extension device |
US7851356B2 (en) * | 2007-09-28 | 2010-12-14 | Qimonda Ag | Integrated circuit and methods of manufacturing the same |
KR20090036698A (ko) * | 2007-10-10 | 2009-04-15 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
JP2009253249A (ja) | 2008-04-11 | 2009-10-29 | Elpida Memory Inc | 半導体装置、その製造方法、及び、データ処理システム |
US8294188B2 (en) * | 2008-10-16 | 2012-10-23 | Qimonda Ag | 4 F2 memory cell array |
US7759704B2 (en) * | 2008-10-16 | 2010-07-20 | Qimonda Ag | Memory cell array comprising wiggled bit lines |
KR101110557B1 (ko) * | 2009-09-08 | 2012-01-31 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 형성 방법 |
FR2955419B1 (fr) * | 2010-01-21 | 2012-07-13 | St Microelectronics Crolles 2 | Dispositif integre de memoire du type dram |
KR101046275B1 (ko) * | 2010-03-29 | 2011-07-04 | 주식회사 하이닉스반도체 | 파워 메쉬 구조를 갖는 반도체 메모리 장치 |
US8552486B2 (en) * | 2011-01-17 | 2013-10-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming metal-insulator-metal capacitors over a top metal layer |
CN104112713B (zh) * | 2013-04-22 | 2017-10-20 | 华邦电子股份有限公司 | 存储器结构及其制造方法与半导体元件 |
US8921947B1 (en) * | 2013-06-10 | 2014-12-30 | United Microelectronics Corp. | Multi-metal gate semiconductor device having triple diameter metal opening |
JP2015103708A (ja) * | 2013-11-26 | 2015-06-04 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置およびその製造方法 |
US11114444B2 (en) * | 2019-05-24 | 2021-09-07 | Nanya Technology Corporation | Semiconductor device with conductive cap layer over conductive plug and method for forming the same |
US11264392B2 (en) * | 2019-06-21 | 2022-03-01 | Samsung Electronics Co., Ltd. | Semiconductor devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264712A (en) * | 1989-03-20 | 1993-11-23 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
CN1108433A (zh) * | 1993-08-02 | 1995-09-13 | 莫托罗拉公司 | 具有金属氧化物电介质的电容器 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2559397B2 (ja) * | 1987-03-16 | 1996-12-04 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
CA1306072C (en) | 1987-03-30 | 1992-08-04 | John E. Cronin | Refractory metal - titanium nitride conductive structures and processes for forming the same |
US5240505A (en) * | 1989-08-03 | 1993-08-31 | Mitsubishi Denki Kabushiki Kaisha | Method of an apparatus for forming thin film for semiconductor device |
JPH03188668A (ja) * | 1989-12-18 | 1991-08-16 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100215338B1 (ko) * | 1991-03-06 | 1999-08-16 | 가나이 쓰도무 | 반도체 장치의 제조방법 |
JPH04342164A (ja) * | 1991-05-20 | 1992-11-27 | Hitachi Ltd | 半導体集積回路装置の形成方法 |
US5204286A (en) * | 1991-10-15 | 1993-04-20 | Micron Technology, Inc. | Method of making self-aligned contacts and vertical interconnects to integrated circuits |
JP2903883B2 (ja) | 1992-07-30 | 1999-06-14 | 日本電気株式会社 | 半導体装置の製造方法 |
US5783471A (en) * | 1992-10-30 | 1998-07-21 | Catalyst Semiconductor, Inc. | Structure and method for improved memory arrays and improved electrical contacts in semiconductor devices |
JPH0794600A (ja) * | 1993-06-29 | 1995-04-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR100307602B1 (ko) * | 1993-08-30 | 2001-12-15 | 가나이 쓰도무 | 반도체집적회로장치및그제조방법 |
JPH07106437A (ja) * | 1993-10-01 | 1995-04-21 | Hitachi Ltd | 半導体記憶装置 |
JP2643870B2 (ja) * | 1994-11-29 | 1997-08-20 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
US5576579A (en) * | 1995-01-12 | 1996-11-19 | International Business Machines Corporation | Tasin oxygen diffusion barrier in multilayer structures |
US5793076A (en) * | 1995-09-21 | 1998-08-11 | Micron Technology, Inc. | Scalable high dielectric constant capacitor |
SG54456A1 (en) * | 1996-01-12 | 1998-11-16 | Hitachi Ltd | Semconductor integrated circuit device and method for manufacturing the same |
-
1997
- 1997-01-07 SG SG1997000019A patent/SG54456A1/en unknown
- 1997-01-10 KR KR1019970000413A patent/KR100420250B1/ko not_active IP Right Cessation
- 1997-01-10 CN CNB97102023XA patent/CN1307721C/zh not_active Expired - Lifetime
- 1997-01-13 TW TW085115937A patent/TW326570B/zh not_active IP Right Cessation
- 1997-01-13 US US08/782,351 patent/US6150689A/en not_active Expired - Lifetime
- 1997-01-13 MY MYPI97000121A patent/MY124093A/en unknown
-
2000
- 2000-11-17 US US09/714,127 patent/US6635918B1/en not_active Expired - Lifetime
-
2003
- 2003-08-19 US US10/642,743 patent/US6924525B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264712A (en) * | 1989-03-20 | 1993-11-23 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
CN1108433A (zh) * | 1993-08-02 | 1995-09-13 | 莫托罗拉公司 | 具有金属氧化物电介质的电容器 |
Also Published As
Publication number | Publication date |
---|---|
US20040031980A1 (en) | 2004-02-19 |
MY124093A (en) | 2006-06-30 |
US6924525B2 (en) | 2005-08-02 |
TW326570B (en) | 1998-02-11 |
CN1162845A (zh) | 1997-10-22 |
US6635918B1 (en) | 2003-10-21 |
SG54456A1 (en) | 1998-11-16 |
US6150689A (en) | 2000-11-21 |
KR970060452A (ko) | 1997-08-12 |
KR100420250B1 (ko) | 2004-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1307721C (zh) | 半导体集成电路装置及其制造方法 | |
US6404001B2 (en) | Multilevel conductive interconnections including capacitor electrodes for integrated circuit devices | |
US6603203B2 (en) | Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same | |
US7398595B2 (en) | Method for forming a storage cell capacitor compatible with high dielectric constant materials | |
US6303429B1 (en) | Structure of a capacitor section of a dynamic random-access memory | |
US6603161B2 (en) | Semiconductor device having ferroelectric capacitor and method for manufacturing the same | |
US6303958B1 (en) | Semiconductor integrated circuit and method for manufacturing the same | |
US7285810B2 (en) | Ferroelectric memory devices having expanded plate lines | |
JPH1117124A (ja) | 半導体装置およびその製造方法 | |
US5644151A (en) | Semiconductor memory device and method for fabricating the same | |
US6927437B2 (en) | Ferroelectric memory device | |
US6576509B1 (en) | Semiconductor integrated circuit device and method of manufacturing the same | |
JP3269528B2 (ja) | 容量素子を有する半導体装置及びその製造方法 | |
KR20020084934A (ko) | 강유전체 메모리 소자의 제조 방법 | |
US6511877B2 (en) | Semiconductor integrated circuit and method for manufacturing the same | |
KR100644999B1 (ko) | 신뢰성 및 밀도가 개선된 강유전체 메모리 집적 회로 | |
US6724026B2 (en) | Memory architecture with memory cell groups | |
JPH09252098A (ja) | 半導体集積回路装置およびその製造方法 | |
US20040232457A1 (en) | Memory architecture with series grouped by cells | |
KR19980070994A (ko) | 반도체 장치 및 그의 제조 방법 | |
US7763920B2 (en) | Semiconductor memory having ferroelectric capacitor | |
WO2002003423A2 (en) | Capacitor and capacitor contact process for stack capacitor drams |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: ELPIDA MEMORY INC. Free format text: FORMER OWNER: HITACHI CO., LTD. Effective date: 20061208 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20061208 Address after: Tokyo, Japan Applicant after: Nihitatsu Memory Co., Ltd. Address before: Tokyo, Japan Applicant before: Hitachi Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: PS4 LASCO CO., LTD. Free format text: FORMER OWNER: NIHITATSU MEMORY CO., LTD. Effective date: 20130826 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130826 Address after: Luxemburg Luxemburg Patentee after: ELPIDA MEMORY INC. Address before: Tokyo, Japan Patentee before: Nihitatsu Memory Co., Ltd. |
|
CX01 | Expiry of patent term |
Granted publication date: 20070328 |
|
EXPY | Termination of patent right or utility model |