CN1270375C - 集成电路芯片与电路基片的连接方法及其应用 - Google Patents

集成电路芯片与电路基片的连接方法及其应用 Download PDF

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Publication number
CN1270375C
CN1270375C CNB018173675A CN01817367A CN1270375C CN 1270375 C CN1270375 C CN 1270375C CN B018173675 A CNB018173675 A CN B018173675A CN 01817367 A CN01817367 A CN 01817367A CN 1270375 C CN1270375 C CN 1270375C
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adhesive
chip
projection
integrated circuit
conductivity
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Chinese (zh)
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CN1470068A (zh
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P·B·霍格通
K·Y·陈
J·A·格伯
R·L·D·泽纳
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3M Innovative Properties Co
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3M Innovative Properties Co
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Priority claimed from US09/690,600 external-priority patent/US7170185B1/en
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
CNB018173675A 2000-10-17 2001-01-25 集成电路芯片与电路基片的连接方法及其应用 Expired - Fee Related CN1270375C (zh)

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US09/690,600 US7170185B1 (en) 1997-12-08 2000-10-17 Solvent assisted burnishing of pre-underfilled solder bumped wafers for flipchip bonding
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003092310A (ja) * 2001-09-17 2003-03-28 Nagase & Co Ltd 封止樹脂付突起電極付ｉｃチップとその製造方法
JP2003092311A (ja) * 2001-09-17 2003-03-28 Nagase & Co Ltd 突起電極付ｉｃチップの実装方法
US20050129977A1 (en) 2003-12-12 2005-06-16 General Electric Company Method and apparatus for forming patterned coated films
JP2005347356A (ja) * 2004-05-31 2005-12-15 Sanyo Electric Co Ltd 回路装置の製造方法
JP2006140432A (ja) * 2004-10-15 2006-06-01 Nippon Steel Corp ウェハレベルパッケージの製造方法
DE102005046280B4 (de) 2005-09-27 2007-11-08 Infineon Technologies Ag Halbleiterbauteil mit einem Halbleiterchip sowie Verfahren zur Herstellung desselben
DE102006009478A1 (de) * 2006-02-27 2007-08-30 Infineon Technologies Ag Verfahren und Substrat zum Flip-Chip-Bonden und Halbleiterbauelement
JP4789190B2 (ja) * 2006-03-29 2011-10-12 新日鐵化学株式会社 バンプを備えた半導体装置の製造方法
US7867793B2 (en) * 2007-07-09 2011-01-11 Koninklijke Philips Electronics N.V. Substrate removal during LED formation
JP5152157B2 (ja) * 2009-11-16 2013-02-27 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2012039045A (ja) * 2010-08-11 2012-02-23 Nec Embedded Products Ltd パッケージ、電子機器、パッケージ接続方法及びパッケージ修理方法
JP5662855B2 (ja) * 2011-03-25 2015-02-04 株式会社日立製作所 プリント基板の製造装置および製造方法
WO2016154191A1 (en) * 2015-03-24 2016-09-29 Chen Zhijin Two-part urethane adhesive
US10163847B2 (en) * 2017-03-03 2018-12-25 Tdk Corporation Method for producing semiconductor package
JP7382708B2 (ja) * 2018-06-29 2023-11-17 リンテック株式会社 実装方法
US11374148B2 (en) * 2019-06-11 2022-06-28 Facebook Technologies, Llc Dielectric-dielectric and metallization bonding via plasma activation and laser-induced heating
US11404600B2 (en) 2019-06-11 2022-08-02 Meta Platforms Technologies, Llc Display device and its process for curing post-applied underfill material and bonding packaging contacts via pulsed lasers
CN115938963B (zh) * 2023-03-13 2023-05-23 深圳市光为光通信科技有限公司 一种基于硅基光电子集成芯片的光电共封装方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108210A (ja) * 1989-09-21 1991-05-08 Hitachi Chem Co Ltd 異方導電性樹脂フィルム成形物の製造方法
CA2107579A1 (en) * 1991-04-10 1992-10-11 Douglas J. Bosscher Low voc cleaning compositions and methods
JP3376203B2 (ja) * 1996-02-28 2003-02-10 株式会社東芝 半導体装置とその製造方法及びこの半導体装置を用いた実装構造体とその製造方法
JPH09330992A (ja) * 1996-06-10 1997-12-22 Ricoh Co Ltd 半導体装置実装体とその製造方法
JP3137322B2 (ja) * 1996-07-12 2001-02-19 富士通株式会社 半導体装置の製造方法及び半導体装置製造用金型及び半導体装置
JPH10242211A (ja) * 1996-12-24 1998-09-11 Nitto Denko Corp 半導体装置の製法
US6260264B1 (en) * 1997-12-08 2001-07-17 3M Innovative Properties Company Methods for making z-axis electrical connections
JP3326382B2 (ja) * 1998-03-26 2002-09-24 松下電器産業株式会社 半導体装置の製造方法
SG82001A1 (en) * 1998-07-02 2001-07-24 Nat Starch Chem Invest Method of making an electronic component using reworkable underfill encapsulants
JP2000040711A (ja) * 1998-07-23 2000-02-08 Sony Corp 樹脂封止型半導体装置とその製造方法
JP2000077472A (ja) * 1998-09-01 2000-03-14 Hitachi Chem Co Ltd 半導体装置
JP4249827B2 (ja) * 1998-12-04 2009-04-08 株式会社ディスコ 半導体ウェーハの製造方法
JP4598905B2 (ja) * 1999-01-29 2010-12-15 フリースケール セミコンダクター インコーポレイテッド 半導体素子の製造方法
JP3413120B2 (ja) * 1999-02-23 2003-06-03 ローム株式会社 チップ・オン・チップ構造の半導体装置

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CN1470068A (zh) 2004-01-21
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WO2002033750A1 (en) 2002-04-25
KR20030060913A (ko) 2003-07-16
EP1327264A1 (en) 2003-07-16
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