CN1264168A - 封装具有凸电极的半导体器件的方法 - Google Patents
封装具有凸电极的半导体器件的方法 Download PDFInfo
- Publication number
- CN1264168A CN1264168A CN00100754A CN00100754A CN1264168A CN 1264168 A CN1264168 A CN 1264168A CN 00100754 A CN00100754 A CN 00100754A CN 00100754 A CN00100754 A CN 00100754A CN 1264168 A CN1264168 A CN 1264168A
- Authority
- CN
- China
- Prior art keywords
- convex electrode
- mask
- scraper plate
- substrate
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000004806 packaging method and process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000007789 sealing Methods 0.000 claims abstract description 34
- 239000011347 resin Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 32
- 229910052710 silicon Inorganic materials 0.000 abstract description 32
- 239000010703 silicon Substances 0.000 abstract description 32
- 238000012360 testing method Methods 0.000 abstract description 3
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Screen Printers (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25971/1999 | 1999-02-03 | ||
JP02597199A JP3430289B2 (ja) | 1999-02-03 | 1999-02-03 | 半導体装置の製造方法 |
JP26005099A JP3216637B2 (ja) | 1999-09-14 | 1999-09-14 | 半導体装置の製造方法 |
JP260050/1999 | 1999-09-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1264168A true CN1264168A (zh) | 2000-08-23 |
CN1160769C CN1160769C (zh) | 2004-08-04 |
Family
ID=26363681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001007548A Expired - Lifetime CN1160769C (zh) | 1999-02-03 | 2000-02-03 | 封装具有凸电极的半导体器件的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6319851B1 (zh) |
KR (1) | KR100333060B1 (zh) |
CN (1) | CN1160769C (zh) |
TW (1) | TW479303B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100414676C (zh) * | 2003-05-14 | 2008-08-27 | 英特尔公司 | 用于在衬底上堆积材料的模板和方法 |
CN100437960C (zh) * | 2003-02-25 | 2008-11-26 | 京瓷株式会社 | 印刷掩模及使用该掩模的电子零件的制造方法 |
CN102294314A (zh) * | 2010-06-25 | 2011-12-28 | 上海微电子装备有限公司 | 一种晶圆涂胶机及涂胶方法 |
CN106014558A (zh) * | 2015-03-27 | 2016-10-12 | 丰田自动车株式会社 | 电加热式催化剂转换器 |
CN116510985A (zh) * | 2023-03-30 | 2023-08-01 | 安徽聚力威新材料科技有限公司 | 耐候性漆面保护膜的制备方法及制备设备 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3223283B2 (ja) * | 1999-09-14 | 2001-10-29 | カシオ計算機株式会社 | 半導体装置の製造方法 |
JP3409759B2 (ja) * | 1999-12-09 | 2003-05-26 | カシオ計算機株式会社 | 半導体装置の製造方法 |
JP2001185566A (ja) * | 1999-12-22 | 2001-07-06 | Nec Corp | 液状樹脂による樹脂封止装置及び樹脂封止方法 |
JP4371656B2 (ja) * | 2000-06-29 | 2009-11-25 | 東レエンジニアリング株式会社 | 電子部品の樹脂封止方法 |
JP5880283B2 (ja) | 2012-05-29 | 2016-03-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR102150260B1 (ko) * | 2018-07-27 | 2020-09-02 | 삼성디스플레이 주식회사 | 구동칩, 회로기판 어셈블리 및 이를 포함하는 표시 장치 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4627988A (en) * | 1985-07-29 | 1986-12-09 | Motorola Inc. | Method for applying material to a semiconductor wafer |
JP2830351B2 (ja) | 1990-04-12 | 1998-12-02 | カシオ計算機株式会社 | 半導体装置の接続方法 |
US5147084A (en) | 1990-07-18 | 1992-09-15 | International Business Machines Corporation | Interconnection structure and test method |
US5478700A (en) * | 1993-12-21 | 1995-12-26 | International Business Machines Corporation | Method for applying bonding agents to pad and/or interconnection sites in the manufacture of electrical circuits using a bonding agent injection head |
JP2842361B2 (ja) | 1996-02-28 | 1999-01-06 | 日本電気株式会社 | 半導体装置 |
US6063646A (en) | 1998-10-06 | 2000-05-16 | Japan Rec Co., Ltd. | Method for production of semiconductor package |
-
2000
- 2000-01-19 US US09/487,165 patent/US6319851B1/en not_active Expired - Lifetime
- 2000-01-31 TW TW089101623A patent/TW479303B/zh not_active IP Right Cessation
- 2000-02-02 KR KR1020000005201A patent/KR100333060B1/ko not_active IP Right Cessation
- 2000-02-03 CN CNB001007548A patent/CN1160769C/zh not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100437960C (zh) * | 2003-02-25 | 2008-11-26 | 京瓷株式会社 | 印刷掩模及使用该掩模的电子零件的制造方法 |
CN100414676C (zh) * | 2003-05-14 | 2008-08-27 | 英特尔公司 | 用于在衬底上堆积材料的模板和方法 |
CN102294314A (zh) * | 2010-06-25 | 2011-12-28 | 上海微电子装备有限公司 | 一种晶圆涂胶机及涂胶方法 |
CN106014558A (zh) * | 2015-03-27 | 2016-10-12 | 丰田自动车株式会社 | 电加热式催化剂转换器 |
CN106014558B (zh) * | 2015-03-27 | 2018-07-13 | 丰田自动车株式会社 | 电加热式催化剂转换器 |
CN116510985A (zh) * | 2023-03-30 | 2023-08-01 | 安徽聚力威新材料科技有限公司 | 耐候性漆面保护膜的制备方法及制备设备 |
CN116510985B (zh) * | 2023-03-30 | 2023-10-13 | 安徽聚力威新材料科技有限公司 | 耐候性漆面保护膜的制备方法及制备设备 |
Also Published As
Publication number | Publication date |
---|---|
KR100333060B1 (ko) | 2002-04-22 |
TW479303B (en) | 2002-03-11 |
CN1160769C (zh) | 2004-08-04 |
KR20000057892A (ko) | 2000-09-25 |
US6319851B1 (en) | 2001-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1160769C (zh) | 封装具有凸电极的半导体器件的方法 | |
US6056191A (en) | Method and apparatus for forming solder bumps | |
US6390439B1 (en) | Hybrid molds for molten solder screening process | |
US6287895B1 (en) | Semiconductor package having enhanced ball grid array protective dummy members | |
CN1967943A (zh) | 阴连接器、阴连接器的安装结构及其安装到基板的方法 | |
CN1288259A (zh) | 半导体芯片的固定方法和固定装置 | |
US8293589B2 (en) | Wire bond encapsulant control method | |
EP0892427A2 (en) | Method of sealing electronic parts with a resin | |
JP4017480B2 (ja) | 樹脂封止金型 | |
US9314864B2 (en) | C4NP compliant solder fill head seals | |
CN1214452C (zh) | 半导体装置及其制造方法 | |
CN1298439C (zh) | 糊剂涂敷方法及糊剂涂敷装置 | |
CN1101597C (zh) | 片上引线式半导体芯片封装及其制作方法 | |
JP3132354B2 (ja) | 導電性ボールの搭載装置および搭載方法 | |
KR100474843B1 (ko) | 리드프레임,그의제조방법및그것을사용한반도체장치 | |
JPH07186428A (ja) | サーマルプリントヘッドおよびその製造方法 | |
JP3334497B2 (ja) | スキージ装置及び粘性物のスキージング方法 | |
JP4183313B2 (ja) | ブレーク溝の加工方法及び加工装置 | |
JP4078224B2 (ja) | モールド金型 | |
JPH0945728A (ja) | チップの実装装置および実装方法 | |
JP2973889B2 (ja) | 導電性ボールの搭載装置および搭載方法 | |
JP3402275B2 (ja) | 電子部品の製造方法及び製造装置 | |
CN100416807C (zh) | 半导体封装结构及其制造方法 | |
JP2828075B2 (ja) | 半導体装置 | |
JPS6441234A (en) | Manufacture of resin sealed type semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1029442 Country of ref document: HK |
|
ASS | Succession or assignment of patent right |
Owner name: ZHAOZHUANGWEI CO., LTD. Free format text: FORMER OWNER: CASIO COMPUTER CO., LTD. Effective date: 20120316 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120316 Address after: Tokyo, Japan Patentee after: Zhaozhuang Micro Co.,Ltd. Address before: Tokyo, Japan Patentee before: CASIO COMPUTER Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20170405 Address after: Kagawa Patentee after: AOI ELECTRONICS Co.,Ltd. Address before: Kanagawa Patentee before: Zhao Tan Jing Co.,Ltd. Effective date of registration: 20170405 Address after: Kanagawa Patentee after: Zhao Tan Jing Co.,Ltd. Address before: Tokyo, Japan Patentee before: Zhaozhuang Micro Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20040804 |
|
CX01 | Expiry of patent term |