CN1261511C - 化学机械抛光组合物及其相关方法 - Google Patents

化学机械抛光组合物及其相关方法 Download PDF

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Publication number
CN1261511C
CN1261511C CNB028100328A CN02810032A CN1261511C CN 1261511 C CN1261511 C CN 1261511C CN B028100328 A CNB028100328 A CN B028100328A CN 02810032 A CN02810032 A CN 02810032A CN 1261511 C CN1261511 C CN 1261511C
Authority
CN
China
Prior art keywords
monomers
engineered
copolymer
derived
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB028100328A
Other languages
English (en)
Chinese (zh)
Other versions
CN1509322A (zh
Inventor
B·温斯坦
T·高希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rodel Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rodel Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of CN1509322A publication Critical patent/CN1509322A/zh
Application granted granted Critical
Publication of CN1261511C publication Critical patent/CN1261511C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB028100328A 2001-05-18 2002-05-17 化学机械抛光组合物及其相关方法 Expired - Lifetime CN1261511C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/860,933 US6632259B2 (en) 2001-05-18 2001-05-18 Chemical mechanical polishing compositions and methods relating thereto
US09/860,933 2001-05-18

Publications (2)

Publication Number Publication Date
CN1509322A CN1509322A (zh) 2004-06-30
CN1261511C true CN1261511C (zh) 2006-06-28

Family

ID=25334410

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028100328A Expired - Lifetime CN1261511C (zh) 2001-05-18 2002-05-17 化学机械抛光组合物及其相关方法

Country Status (7)

Country Link
US (4) US6632259B2 (enExample)
EP (1) EP1399517A2 (enExample)
JP (1) JP2005502188A (enExample)
KR (1) KR20040002972A (enExample)
CN (1) CN1261511C (enExample)
TW (1) TWI241328B (enExample)
WO (1) WO2002094957A2 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US6783432B2 (en) * 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6821897B2 (en) 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7004819B2 (en) * 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US7838482B2 (en) * 2003-01-31 2010-11-23 Hitachi Chemical Co. Ltd. CMP polishing compound and polishing method
JP2004303983A (ja) * 2003-03-31 2004-10-28 Fuji Photo Film Co Ltd 研磨パッド
US7387970B2 (en) * 2003-05-07 2008-06-17 Freescale Semiconductor, Inc. Method of using an aqueous solution and composition thereof
JP4746540B2 (ja) * 2003-06-03 2011-08-10 ネクスプラナー コーポレイション 化学機械的平坦化のための機能的に漸次的変化されたパッドの組み立て
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
KR100583118B1 (ko) * 2003-12-19 2006-05-23 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
EP1796152B1 (en) * 2004-07-23 2019-02-27 Hitachi Chemical Company, Ltd. Cmp polishing agent and method for polishing substrate
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
CN1900146B (zh) * 2005-07-21 2012-02-29 安集微电子（上海）有限公司 化学机械抛光液
US20070068087A1 (en) * 2005-09-26 2007-03-29 Cabot Microelectronics Corporation Metal cations for initiating polishing
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
KR100786949B1 (ko) 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리
KR20080070074A (ko) * 2005-12-27 2008-07-29 히다치 가세고교 가부시끼가이샤 금속용 연마액 및 피연마막의 연마 방법
EP1813641B1 (en) * 2006-01-30 2016-12-14 Imec A method for improving mechanical properties of polymer particles and its applications
TW201231580A (en) * 2006-01-31 2012-08-01 Hitachi Chemical Co Ltd CMP abrasive for polishing insulating film, polishing method and semiconductor electronic parts polished by the polishing method
US7824568B2 (en) * 2006-08-17 2010-11-02 International Business Machines Corporation Solution for forming polishing slurry, polishing slurry and related methods
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US7892071B2 (en) * 2006-09-29 2011-02-22 Depuy Products, Inc. Orthopaedic component manufacturing method and equipment
TWI525680B (zh) * 2007-07-05 2016-03-11 日立化成股份有限公司 金屬膜用硏磨液以及硏磨方法
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
WO2009128430A1 (ja) 2008-04-15 2009-10-22 日立化成工業株式会社 金属膜用研磨液及びこれを用いた研磨方法
US8540893B2 (en) 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN102245724A (zh) * 2008-12-19 2011-11-16 安集微电子（上海）有限公司 一种化学机械抛光液
JP5940270B2 (ja) * 2010-12-09 2016-06-29 花王株式会社 研磨液組成物
US8435896B2 (en) 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
JP6425303B2 (ja) * 2014-10-27 2018-11-21 花王株式会社 研磨液組成物
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US10600655B2 (en) 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
WO2022232154A1 (en) 2021-04-26 2022-11-03 Chempower Corporation Pad surface regeneration and metal recovery
CN115011258A (zh) * 2022-07-20 2022-09-06 黄河三角洲京博化工研究院有限公司 一种双组份型抛光液及其制备方法，以及硅片抛光方法
JP2026518965A (ja) * 2023-05-24 2026-06-11 ケムパワー コーポレーション 化学平坦化のためのパッド

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017662A (en) * 1967-11-29 1977-04-12 Rohm And Haas Company Polishing method
US4299749A (en) * 1980-06-30 1981-11-10 Sterling Drug Inc. Floor coating composition
US4752628A (en) 1987-05-15 1988-06-21 Nalco Chemical Company Concentrated lapping slurries
US4869934A (en) * 1988-09-16 1989-09-26 Sterling Drug Inc. Floor polishing and coating composition
US5073285A (en) * 1989-06-12 1991-12-17 Lever Brothers Company, Division Of Conopco, Inc. Stably suspended organic peroxy bleach in a structured aqueous liquid
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5614444A (en) 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5932486A (en) 1996-08-16 1999-08-03 Rodel, Inc. Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
JPH11162910A (ja) 1997-11-25 1999-06-18 Sumitomo Chem Co Ltd 半導体装置製造用研磨剤及び研磨方法
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
EP1102821A4 (en) 1998-06-10 2004-05-19 Rodel Inc COMPOSITION AND METHOD FOR CMP POLISHING METAL
CN100381537C (zh) 1998-08-31 2008-04-16 日立化成工业株式会社 金属用研磨液及研磨方法
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
KR100472882B1 (ko) 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
JP3941284B2 (ja) * 1999-04-13 2007-07-04 株式会社日立製作所 研磨方法
TWI254070B (en) 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
US6443812B1 (en) * 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
EP1210395B1 (en) 1999-08-24 2003-10-22 Rodel Holdings, Inc. Compositions for insulator and metal cmp and methods relating thereto
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6605537B2 (en) * 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto

Also Published As

Publication number Publication date
TWI241328B (en) 2005-10-11
JP2005502188A (ja) 2005-01-20
WO2002094957A2 (en) 2002-11-28
CN1509322A (zh) 2004-06-30
KR20040002972A (ko) 2004-01-07
US6902590B2 (en) 2005-06-07
US20030032371A1 (en) 2003-02-13
US7300874B2 (en) 2007-11-27
US20050159003A1 (en) 2005-07-21
WO2002094957A3 (en) 2003-10-23
US20040065020A1 (en) 2004-04-08
US6632259B2 (en) 2003-10-14
EP1399517A2 (en) 2004-03-24
US20030013386A1 (en) 2003-01-16

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Granted publication date: 20060628

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