CN1261511C - 化学机械抛光组合物及其相关方法 - Google Patents

化学机械抛光组合物及其相关方法 Download PDF

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Publication number
CN1261511C
CN1261511C CNB028100328A CN02810032A CN1261511C CN 1261511 C CN1261511 C CN 1261511C CN B028100328 A CNB028100328 A CN B028100328A CN 02810032 A CN02810032 A CN 02810032A CN 1261511 C CN1261511 C CN 1261511C
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CN
China
Prior art keywords
monomers
engineered
copolymer
derived
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB028100328A
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English (en)
Chinese (zh)
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CN1509322A (zh
Inventor
B·温斯坦
T·高希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
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Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN1509322A publication Critical patent/CN1509322A/zh
Application granted granted Critical
Publication of CN1261511C publication Critical patent/CN1261511C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB028100328A 2001-05-18 2002-05-17 化学机械抛光组合物及其相关方法 Expired - Lifetime CN1261511C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/860,933 US6632259B2 (en) 2001-05-18 2001-05-18 Chemical mechanical polishing compositions and methods relating thereto
US09/860,933 2001-05-18

Publications (2)

Publication Number Publication Date
CN1509322A CN1509322A (zh) 2004-06-30
CN1261511C true CN1261511C (zh) 2006-06-28

Family

ID=25334410

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028100328A Expired - Lifetime CN1261511C (zh) 2001-05-18 2002-05-17 化学机械抛光组合物及其相关方法

Country Status (7)

Country Link
US (4) US6632259B2 (enExample)
EP (1) EP1399517A2 (enExample)
JP (1) JP2005502188A (enExample)
KR (1) KR20040002972A (enExample)
CN (1) CN1261511C (enExample)
TW (1) TWI241328B (enExample)
WO (1) WO2002094957A2 (enExample)

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US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
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US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JPWO2006009160A1 (ja) * 2004-07-23 2008-05-01 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
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US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
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WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
KR100786949B1 (ko) 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리
WO2007077886A1 (ja) * 2005-12-27 2007-07-12 Hitachi Chemical Co., Ltd. 金属用研磨液及び被研磨膜の研磨方法
EP1813641B1 (en) * 2006-01-30 2016-12-14 Imec A method for improving mechanical properties of polymer particles and its applications
KR101245502B1 (ko) * 2006-01-31 2013-03-25 히타치가세이가부시끼가이샤 절연막 연마용 ｃｍｐ 연마제, 연마 방법, 상기 연마 방법으로 연마된 반도체 전자 부품
US7824568B2 (en) * 2006-08-17 2010-11-02 International Business Machines Corporation Solution for forming polishing slurry, polishing slurry and related methods
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US7892071B2 (en) * 2006-09-29 2011-02-22 Depuy Products, Inc. Orthopaedic component manufacturing method and equipment
TWI419218B (zh) * 2007-07-05 2013-12-11 日立化成工業股份有限公司 金屬膜用研磨液以及研磨方法
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP2009123880A (ja) 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8734204B2 (en) 2008-04-15 2014-05-27 Hitachi Chemical Company, Ltd. Polishing solution for metal films and polishing method using the same
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN102245724A (zh) * 2008-12-19 2011-11-16 安集微电子（上海）有限公司 一种化学机械抛光液
JP5940270B2 (ja) * 2010-12-09 2016-06-29 花王株式会社 研磨液組成物
US8435896B2 (en) 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
JP6425303B2 (ja) * 2014-10-27 2018-11-21 花王株式会社 研磨液組成物
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US10600655B2 (en) 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
CN117693564A (zh) 2021-04-26 2024-03-12 化学动力公司 垫表面再生和金属收取
CN115011258A (zh) * 2022-07-20 2022-09-06 黄河三角洲京博化工研究院有限公司 一种双组份型抛光液及其制备方法，以及硅片抛光方法
CN121586633A (zh) * 2023-05-24 2026-02-27 肯珀尔公司 用于化学平坦化的垫

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Also Published As

Publication number Publication date
WO2002094957A2 (en) 2002-11-28
TWI241328B (en) 2005-10-11
KR20040002972A (ko) 2004-01-07
US20050159003A1 (en) 2005-07-21
US6632259B2 (en) 2003-10-14
US20040065020A1 (en) 2004-04-08
CN1509322A (zh) 2004-06-30
WO2002094957A3 (en) 2003-10-23
US20030032371A1 (en) 2003-02-13
US6902590B2 (en) 2005-06-07
US20030013386A1 (en) 2003-01-16
EP1399517A2 (en) 2004-03-24
JP2005502188A (ja) 2005-01-20
US7300874B2 (en) 2007-11-27

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Granted publication date: 20060628

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