CN1258322A - 在真空中生成金刚石般碳涂层的方法 - Google Patents
在真空中生成金刚石般碳涂层的方法 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 59
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- 239000002184 metal Substances 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
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- 239000010936 titanium Substances 0.000 claims description 13
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000001133 acceleration Effects 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
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- 229910052787 antimony Inorganic materials 0.000 claims description 3
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- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
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- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
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- 238000000151 deposition Methods 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 description 4
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- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910001868 water Inorganic materials 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/325—Electric arc evaporation
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Abstract
一种在真空中生成金刚石般碳涂层的方法,包括以下步骤:将部件表面预处理;将部件放入真空室中;用加速离子处理部件的表面;在经处理的部件表面涂上一亚表层;从阴极斑点对石墨阴极进行电弧真空溅射从而生成碳等离子体;将碳等离子体的离子加速;将所生成的碳等离子体沉积在部件表面从而生成金刚石般的碳涂层。采用脉冲电弧放电在石墨阴极的端表面激发一组阴极斑点,所述的斑点以10-30米每秒的速度沿阴极的端表面移动,生成离子能量为40-100电子伏特的碳等离子体,等离子体中离子浓度为1012-1014每立方厘米,部件在真空室中电绝缘。以及控制脉冲循环频率来维持部件的温度在200-450K。
Description
本发明涉及在真空中生成超硬耐磨涂层的领域。更具体地说,本发明涉及在真空中生成金刚石般碳涂层的方法。
本发明可用来提高切割工具、测量工具、摩擦件和机器部件的使用寿命,本发明还可用于医学领域来改进移植物的生物相容性,用于电子工程领域来增加声频或视频磁头的使用寿命、改进声音振动片的性能,还可作为光学部件的涂层和装饰层。
现有技术中已知的是在金属和介电基层上生成高硬度金刚石般碳涂层的方法(见SU发明人证书号411037,1975),其中在磁场中,在10-5至10-2帕低压稀有气体氯中将石墨阴极溅射至温度低于100K的冷却底层上。
由于加工气体氪的压力低,在该压力下的辉光放电的能量较低,所以该工艺的产率较低。在技术上,难以将处理的部件维持在如此低的温度。因此,不得不采用极复杂的工艺设备来达到超高真空。
最接近的技术措施是在真空生成金刚石般碳涂层的方法。该方法包括以下步骤:将部件表面预处理;将部件放入真空室中;用加速离子处理部件的表面;在部件表面涂上一亚表层;从阴极斑点对石墨阴极进行电弧真空溅射从而生成碳等离子体;将碳等离子体的离子加速;将所生成的碳等离子体沉积在部件表面从而生成金刚石般的碳涂层(见,D.R.McKenzle等人发表于《金刚石和相关材料》(Journal of Diamond and Related Materials),1991年第一期第51-59页的“真空电弧沉积法制备的四面体无定形碳的性能”一文(Properties of tetrahedral amrphous carbon prepared by vacuum arcdeposition)。
在上述方法中,所进行的阴极溅射是从一阴极斑点静止放电,生成碳等离子体,将等离子体分离,即,从静止的阴极斑点生成的微粒中分离出等离子体。然后,施加高频负压以静电方式将等离子体离子加速,从而得到金刚石般碳涂层。
在上述方法中,采用静态放电并不能得到生成金刚石般碳涂层所需的等离子体能量。这意味着,还需在部件上施加电压来另外地加速等离子体离子。其结果是,涂层变热,性能变差,即微硬度下降。
另外,还会引起小尺寸部件过热和锐边,使部件变软。当部件由介电材料制成时,静电加速所产生的作用很小。
静态电弧放电受到以下限制:可移动的阴极斑点和从阴极斑点中逸出的大量硬石墨碎片的存在,这种阴极斑点是低能量碳等离子体的来源。离子能量不超过10-15电子伏特。若石墨碎片撞击部件表面,会极大地损坏所生成的涂层的质量。
为了消除这一缺点,所述的方法使用了曲线磁偏转系统,结果使生成涂层的方法特别复杂。另外,由于阴极斑点是该方法中碳等离子体的来源,所以会产生窄的碳等子体束,这样不能在加长的部件上形成均匀的金刚石般的碳涂层。
比较小的等离子体密度,即离子浓度,意味着需要提高真空度以避免涂层受到残余气体的破坏和涂层质量的下降。
由于该方法的静态特性难以维持所需的温度,所以使形成涂层的方法复杂化。在小尺寸的膜材料上生成金刚石般的碳涂层更加困难。在此情况下,涂层的质量不稳定。
本发明的基础是如何得到一种在真空中生成金刚石般碳涂层的方法,其中采用脉冲电弧放电在阴极的末表面生成一组阴极斑点,并改变脉冲循环频率来维持部件的温度,可以简化生成涂层的方法,改进稳定性和产率,并能提高所生成的涂层的质量,特别是其均匀性和耐磨性。
所提到的问题可由如下在真空中生成金刚石般碳涂层的方法得到解决。该方法包括以下步骤:将部件表面预处理;将部件放入真空室中;用加速离子处理部件的表面;在经处理的部件表面涂一亚表层;从阴极斑点对石墨阴极进行电弧真空溅射从而生成碳等离子体;将碳等离子体的离子加速;将所生成的碳等离子体沉积在部件表面从而生成金刚石般的碳涂层。根据本发明,为了生成、加速和沉积碳等离子体,所述的方法包括如下步骤:采用脉冲电弧放电在石墨阴极的末表面激发一组阴极斑点,所述的斑点以10-30米每秒的速度沿阴极的末表面移动,生成离子能量为40-100电子伏特的碳等离子体,等离子体中离子浓度为1012-1014每立方厘米,在真空室中对部件进行电绝缘并改变脉冲循环频率来维持部件的温度在200-450K。
在处理金属部件时,用金属离子作为加速离子是有用的。
方便的是,采用厚度为100-500埃的金属作为亚表层材料。用于此目的的金属选自钛、铬、钼、锆、铌和钨。
有利的是,在用加速的金属离子处理部件表面时,将部件的温度增加到473-573K的范围,然后将部件冷却到293-300K,用加速的金属离子再处理部件表面直至温度到达323K。
在10-2-10-1帕的氩气气氛中,进行该工艺是方便的。
在处理介电部件时,用气体离子作为加速离子是有益的。所述的气体选自氩、氮、氧或其混合物。
有利的是,在处理玻璃部件时,在其上施加将厚度为50-200埃的氮化铝的亚表层。
采用高纯石墨作为石墨电极是有利的,其中孔隙量为约0.5%。
有益的是,采用与掺杂元素相混合的石墨作为石墨电极,所述的渗杂元素选自硅、锗、锇、铋、磷和锑。
有利的是,对由选自钛、铬、铝、锆、锗的金属制成的另外的电极进行溅射。
用气体或金属的加速离子对形成在部件表面的金刚石般的碳涂层进行处理也是有益的。
现在参考各种具体的实施方案对本发明进行详细描述。
在真空中生成金刚石般碳涂层的方法是如下进行的:用机械方法处理部件表面然后脱脂。之后,将部件放入真空室的特殊的夹具中固定。电弧电流设置为60-80埃,在部件上施加1000-1500V的负压。以该方式用加速的离子对部件进行处理。
然后,将部件上所施加的电压降至100V,并在处理后的表面上形成厚度为100-500埃的亚表层。可以使用选自钛、铬、钼、锆、铌和钨的金属。
然后,进行石墨电极的电弧真空放电从而生成碳等离子体。用此目的的脉冲电弧放电具有以下参数:电容为2000μF的电容电池的电压为300V;放电时间为0.5ms;脉冲的循环频率为1-20赫兹。在此条件下,在石墨电极的端表面激发一组阴极斑点。所述的阴极斑点以10-30米每秒的速度沿阴极的端表面移动,得到离子能量为40-100电子伏特、离子浓度为1012-1014cm-3的碳等离子体。此时,在部件上不施加电压,部件本身与所有电极和真空室壁绝缘。
控制脉冲循环频率来维持部件的温度在200-450K。
将所生成的碳等离子体沉积在部件表面从而生成金刚石般的碳涂层。
若目视或显微观察发现,预处理后,处理并不有效或部件表面仍有氧化物膜,用金属加速离子处理表面的时间会增加,部件的温度增加到473-573K的范围。然后将部件冷却到293-300K,用加速的金属离子再处理部件表面直至温度到达323K。
为改进纯化的强度,在10-2-10-1帕的氩气气氛中,进行离子处理。
在处理介电部件时,用气体离子作为加速离子。所述的气体选自氩、氮、氧或其混合物。
在处理玻璃部件时,在气体离子处理后,在玻璃上施加厚度为50-200埃的氮化铝层以增加金刚石般碳涂层和玻璃部件表面之间的粘结力。
在该方法中,采用高纯石墨作为石墨电极,其中孔隙量为约0.5%。为了改进金刚石般碳涂层的质量,采用孔隙量最小的高纯石墨作为石墨电极,因为孔隙会包住杂质如气态氮、氧、水蒸气。杂质进入所形成的涂层会降低涂层的质量。
为了得到金刚石般碳涂层的半导体性质,采用与掺杂元素相混合的石墨作为石墨电极,所述的渗杂元素选自硅、锗、锇、铋、磷和锑。
若需要金刚石般碳涂层具有不同的电阻值,可对由选自钛、铬、铝、锆、锗的金属制成的另外的电极进行溅射。
为了改变光学和电学特性和在涂层上得到图案,用气体或金属的加速离子对形成在部件表面的金刚石般的碳涂层进行处理。
实施例1
使用大小为20×20×20mm的硬碳钢抛光样品,将所述的样品固定在真空室中的特殊夹具上。将所述室抽真空至5×10-3帕。由钛阴极的电弧等离子体源产生钛离子进行离子处理。在样品上施加1000V的负压。电弧电流设定在80A。处理时间为5分种。然后,将电压降至100V得到200埃的钛亚表层。然后在不对样品施加电压和下列参数下,采用脉冲放电对石墨阴极进行电弧溅射,形成10微米的金刚石般的碳涂层。所述的参数为:电容为2000μF的电容电池的电压为300V;放电时间为0.5ms;脉冲的循环频率为10赫兹。此时,离子能量为70伏特、离子强度为1013cm-3的碳等离子体。样品温度为423K。
经ESCA法(电子光谱化学分析法)未发现涂层中有石墨杂质。
金刚石般的碳涂层的微硬度在100克负荷下为8000HV。与氮化钛的摩擦系数为0.04、与硬化钢的摩擦系数为0.08,与铜的摩擦系数为0.1。
X-射线分析表明涂层为无定形。
实施例2
使用由钛制成的人造心形管,将所述的管固定在真空室中的特殊夹具上。将所述室抽真空至5×10-3帕。由钛阴极的电弧等离子体源产生钛离子进行离子处理。在管上施加1000V的负压。电弧电流设定在80A。处理时间为5分种。然后,将电压降至100V得到500埃的钛亚表层。然后在不对样品施加电压和下列参数下,采用脉冲放电对石墨阴极进行电弧溅射,形成2微米的金刚石般的碳涂层。所述的参数为:电容为2000μF的电容电池的电压为300V;放电时间为0.5ms;脉冲的循环频率为3赫兹。此时,离子能量为70伏特、离子强度为1×1013cm-3的碳等离子体。样品温度为423K。
X-射线分析表明涂层为无定形。
经医学和生物研究表明,该涂层具有满意的生物相容性。
实施例3
使用由硬合金制成的切销板。所述的硬合金用于处理轻质铝基合金。将所述的板固定在真空室中的特殊夹具上。将所述室抽真空至5×10-3帕。由钛阴极的电弧等离子体源产生钛离子进行离子处理。在板上施加1500V的负压。电弧电流设定在80A。处理时间为5分种。将板冷却到300K。然后,重复离子处理1分种。然后,将电压降至100V得到200埃的钛亚表层。然后在不对样品施加电压和下列参数下,采用脉冲放电对石墨阴极进行电弧溅射,形成2微米的金刚石般的碳涂层。所述的参数为:电容为2000μF的电容电池的电压为300V;放电时间为0.5ms;脉冲的循环频率为10赫兹。此时,离子能量为70伏特、离子强度为×1013cm-3的碳等离子体。板的温度升至423K。
金刚石般的碳涂层的微硬度在100克负荷下为8000HV。与铝的摩擦系数为0.12。
在大批生产汽车板的情况下对硬合金板进行产品测试。表明使用寿命增加,表面质量改进。
X-射线分析表明涂层为无定形。
Claims (11)
1、一种在真空中生成金刚石般碳涂层的方法,该方法包括以下步骤:将部件表面预处理;
将部件放入真空室中;
用加速离子处理部件的表面;
在经处理的部件表面涂上一亚表层;
从阴极斑点对石墨阴极进行电弧真空溅射从而生成碳等离子体;
将碳等离子体的离子加速;
将所生成的碳等离子体沉积在部件表面从而生成金刚石般的碳涂层;其特征在于:
为了生成、加速和沉积碳等离子体,所述的方法包括如下步骤:采用脉冲电弧放电在石墨阴极的端表面激发一组阴极斑点,所述的斑点以10-30米每秒的速度沿阴极的端表面移动,生成离子能量为40-100电子伏特的碳等离子体,等离子体中离子浓度为1012-1014每立方厘米,部件在真空室中电绝缘;以及
控制脉冲循环频率来维持部件的温度在200-450K。
2、权利要求1的方法,其特征在于在处理金属部件时,用金属离子作为加速离子。
3、权利要求2的方法,其特征在于采用厚度为100-500埃的金属作为亚表层材料,所述的金属选自钛、铬、钼、锆、铌和钨。
4、权利要求2或3的方法,其特征在于在处理部件表面时,将部件的温度增加到473-573K的范围;
将部件冷却到293-300K;
用加速的金属离子再处理部件表面直至温度到达323K。
5、权利要求2-4之一的方法,其特征在于该方法在10-2-10-1帕的氩气气氛中进行。
6、权利要求1的方法,其特征在于在处理介电部件时,用气体离子作为加速离子,所述的气体选自氩、氮、氧或其混合物。
7、权利要求1的方法,其特征在于在处理玻璃部件时,在其上施加厚度为50-200埃的氮化铝的层。
8、权利要求1的方法,其特征在于采用孔隙量为约0.5%的高纯石墨作为石墨电极。
9、权利要求1的方法,其特征在于采用与掺杂元素相混合的石墨作为石墨电极,所述的渗杂元素选自硅、锗、锇、铋、磷和锑。
10、权利要求1的方法,其特征在于对由选自钛、铬、铝、锆和锗的金属制成的另外的电极进行溅射。
11、权利要求1的方法,其特征在于用气体或金属的加速离子对形成在部件表面的金刚石般的碳涂层进行处理。
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RU2651837C1 (ru) * | 2017-03-21 | 2018-04-24 | Олег Андреевич Стрелецкий | Способ нанесения антиадгезивного, биосовместимого и бактериостатичного покрытия на основе углерода на металлические, полимерные и текстильные изделия медицинского назначения |
RU2651836C1 (ru) * | 2017-04-13 | 2018-04-24 | Олег Андреевич Стрелецкий | Способ нанесения антиадгезивного, биосовместимого и бактериостатичного покрытия на основе углерода на изделия медицинского назначения из материала с термомеханической памятью формы |
RU2656312C1 (ru) * | 2017-08-14 | 2018-06-04 | Федеральное государственное бюджетное учреждение науки Институт физики металлов имени М.Н. Михеева Уральского отделения Российской академии наук (ИФМ УрО РАН) | Способ нанесения твердых износостойких наноструктурных покрытий из аморфного алмазоподобного углерода |
RU2757303C1 (ru) * | 2020-08-18 | 2021-10-13 | Общество с ограниченной ответственностью "ТехноТерм-Саратов" | Способ получения аморфного наноструктурированного алмазоподобного покрытия |
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US5527596A (en) | 1990-09-27 | 1996-06-18 | Diamonex, Incorporated | Abrasion wear resistant coated substrate product |
GB9224697D0 (en) | 1992-11-25 | 1993-01-13 | Amaratunga Gehan A J | Doping of highly tetrahedral diamond-like amorphous carbon |
US5401543A (en) * | 1993-11-09 | 1995-03-28 | Minnesota Mining And Manufacturing Company | Method for forming macroparticle-free DLC films by cathodic arc discharge |
TW353758B (en) * | 1996-09-30 | 1999-03-01 | Motorola Inc | Electron emissive film and method |
-
1997
- 1997-05-30 RU RU97108626A patent/RU2114210C1/ru active
-
1998
- 1998-05-28 WO PCT/NO1998/000158 patent/WO1998054376A1/en not_active Application Discontinuation
- 1998-05-28 KR KR1019997010940A patent/KR20010012970A/ko not_active Application Discontinuation
- 1998-05-28 AU AU76785/98A patent/AU7678598A/en not_active Abandoned
- 1998-05-28 US US09/424,763 patent/US6261424B1/en not_active Expired - Fee Related
- 1998-05-28 CN CN98805586.4A patent/CN1258322A/zh active Pending
- 1998-05-28 JP JP50054099A patent/JP2002501575A/ja active Pending
- 1998-05-28 EP EP98924681A patent/EP0985057A1/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101200802B (zh) * | 2006-12-13 | 2010-05-12 | 上海坤孚企业(集团)有限公司 | 发动机内壁陶瓷化处理方法 |
CN101806928A (zh) * | 2010-03-31 | 2010-08-18 | 西安交通大学 | 一种树脂镜片、有机玻璃镜片表面超硬涂层镀膜方法 |
CN110205589A (zh) * | 2019-07-12 | 2019-09-06 | 江苏徐工工程机械研究院有限公司 | 一种脉冲碳离子激发源装置 |
CN110205589B (zh) * | 2019-07-12 | 2023-12-08 | 江苏徐工工程机械研究院有限公司 | 一种脉冲碳离子激发源装置 |
Also Published As
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JP2002501575A (ja) | 2002-01-15 |
US6261424B1 (en) | 2001-07-17 |
AU7678598A (en) | 1998-12-30 |
RU2114210C1 (ru) | 1998-06-27 |
EP0985057A1 (en) | 2000-03-15 |
WO1998054376A1 (en) | 1998-12-03 |
KR20010012970A (ko) | 2001-02-26 |
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