CN1248288C - 制造氮化镓半导体层和相关结构的方法 - Google Patents

制造氮化镓半导体层和相关结构的方法 Download PDF

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Publication number
CN1248288C
CN1248288C CNB00818903XA CN00818903A CN1248288C CN 1248288 C CN1248288 C CN 1248288C CN B00818903X A CNB00818903X A CN B00818903XA CN 00818903 A CN00818903 A CN 00818903A CN 1248288 C CN1248288 C CN 1248288C
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gallium nitride
cylinder
pyramid
substrate
growth
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CN1451173A (zh
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罗伯特·F·戴维斯
凯文·J·林斯卡姆
托马斯·杰赫克
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North Carolina State University
University of California
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
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    • H01L21/02367—Substrates
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    • H01L21/02367—Substrates
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
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    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CNB00818903XA 2000-02-09 2000-08-22 制造氮化镓半导体层和相关结构的方法 Expired - Lifetime CN1248288C (zh)

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US50105700A 2000-02-09 2000-02-09
US09/501,057 2000-02-09

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CN1451173A CN1451173A (zh) 2003-10-22
CN1248288C true CN1248288C (zh) 2006-03-29

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JP (2) JP4801306B2 (ko)
KR (1) KR100865600B1 (ko)
CN (1) CN1248288C (ko)
AU (1) AU2001218182A1 (ko)
WO (1) WO2001059819A1 (ko)

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US7687888B2 (en) 2000-08-04 2010-03-30 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6956250B2 (en) 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US7233028B2 (en) 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
KR100454908B1 (ko) * 2002-02-09 2004-11-06 엘지전자 주식회사 질화갈륨 기판의 제조방법
JP4513446B2 (ja) * 2004-07-23 2010-07-28 豊田合成株式会社 半導体結晶の結晶成長方法
CN100365767C (zh) * 2004-09-17 2008-01-30 同济大学 一种提高氮化镓基材料外延层质量的衬底处理方法
JP4744245B2 (ja) * 2004-11-05 2011-08-10 シャープ株式会社 窒化物半導体素子
TW200703463A (en) 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
JP4793824B2 (ja) * 2006-08-28 2011-10-12 シャープ株式会社 窒化物半導体層の形成方法
JP5003719B2 (ja) * 2009-05-07 2012-08-15 豊田合成株式会社 半導体素子及び結晶成長基板
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
KR101622309B1 (ko) 2010-12-16 2016-05-18 삼성전자주식회사 나노구조의 발광소자
JP5811009B2 (ja) 2012-03-30 2015-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
JP6020357B2 (ja) 2013-05-31 2016-11-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
JP6485299B2 (ja) * 2015-06-05 2019-03-20 豊田合成株式会社 半導体装置およびその製造方法ならびに電力変換装置
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors

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JP2569099B2 (ja) * 1987-12-25 1997-01-08 株式会社日立製作所 エピタキシャル成長方法
JPH05234900A (ja) * 1992-02-19 1993-09-10 Nec Corp 半導体装置の製造方法
DE19725900C2 (de) * 1997-06-13 2003-03-06 Dieter Bimberg Verfahren zur Abscheidung von Galliumnitrid auf Silizium-Substraten
JP3930161B2 (ja) * 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP2002505519A (ja) * 1998-02-27 2002-02-19 ノース・キャロライナ・ステイト・ユニヴァーシティ マスクを通過する横方向のオーバーグロースによる窒化ガリウム半導体層を製造する方法及びそれによって製造された窒化ガリウム半導体の構造体
JP4005701B2 (ja) * 1998-06-24 2007-11-14 シャープ株式会社 窒素化合物半導体膜の形成方法および窒素化合物半導体素子
JP4352473B2 (ja) * 1998-06-26 2009-10-28 ソニー株式会社 半導体装置の製造方法
JP2000031068A (ja) * 1998-07-14 2000-01-28 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板
JP3471700B2 (ja) * 1999-03-17 2003-12-02 三菱電線工業株式会社 半導体基材
JP3471685B2 (ja) * 1999-03-17 2003-12-02 三菱電線工業株式会社 半導体基材及びその製造方法

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Publication number Publication date
KR100865600B1 (ko) 2008-10-27
JP5323792B2 (ja) 2013-10-23
JP2010283398A (ja) 2010-12-16
JP4801306B2 (ja) 2011-10-26
KR20020086511A (ko) 2002-11-18
JP2003526907A (ja) 2003-09-09
AU2001218182A1 (en) 2001-08-20
CN1451173A (zh) 2003-10-22
WO2001059819A1 (en) 2001-08-16

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