CN1246964A - 无线电结构 - Google Patents

无线电结构 Download PDF

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CN1246964A
CN1246964A CN98802294A CN98802294A CN1246964A CN 1246964 A CN1246964 A CN 1246964A CN 98802294 A CN98802294 A CN 98802294A CN 98802294 A CN98802294 A CN 98802294A CN 1246964 A CN1246964 A CN 1246964A
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A·利特温
S·E·马蒂松
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Telefonaktiebolaget LM Ericsson AB
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Abstract

一种数字无线电收发信机集成电路包括在数字电路中具有常规阈值电压而至少在一些模拟RF元件中具有降低的阈值电压的MOS晶体管。可以使收发信机的尺寸和重量减小,而不需要性能折衷。

Description

无线电结构
发明涉及的技术领域
本发明涉及无线电结构，特别涉及用于数字无线电收发信机的CMOS结构。
相关技术的介绍
在数字移动技术领域中，必需传输和接收运载数字信号的无线电信号。另外，最好是移动收发信机应尽可能小且轻，具有低功率需要。有利的是利用CMOS制造技术实现收发信机的数字元件，例如数字信号处理器及A/D转换器和D/A转换器。这意味着，就制造而言，有利的是利用相同的CMOS制造技术实现收发信机的模拟元件，例如，放大器、混频器等。S.Sheng等人在1996年的国际固态电路会议上的“Low-Power CMOS Chipset for Spread-spectrum Communications”一文中披露了这类结构。
然而，CMOS晶体管一般设计成用作具有低漏电流的开关。结果是这种晶体管较不适合用于模拟RF电路。例如，它们一般具有低跨导，尤其是在低偏压时更是如此，造成了低增益和高(相)噪声。
美国专利5,407,849披露了一种制造CMOS电路的方法，其中某些晶体管(FET)的阈值电压例如降低到接近零伏。
发明概述
如果决定采用CMOS工艺实现整个电路的话，则所以现有技术的无线电结构都涉及对器件性能的折衷。同时，美国专利5,407,849披露了降低CMOS电路中某些FET的阈值电压，但没公开这种技术如何可应用于无线电结构。
本发明涉及在用于数字无线电的集成电路的不同部分采用具有不同阈值电压的晶体管。
有益的是，本发明涉及在处理数字信号的电路中采用具有高或一般阈值电压的晶体管，及在处理模拟信号的电路中采用具有降低的阈值电压的晶体管。
此外，本发明还涉及在无线电收发信机的前端电路中采用一些具有高或一般阈值电压的晶体管和一些具有降低的阈值电压的晶体管。这种收发信机可以是CMOS结构，或可以只采用NMOS或PMOS器件。
附图简要介绍
图1是本发明的无线电收发信机的框图。
图2是本发明的前端电路的示意电路图。
图3是展示本发明优点的第一常规电路。
图4是展示本发明优点的第二常规电路。
实施例的详细介绍
如图1所示，用于移动电话的无线电收发信机2具有接收无线电信号的接收天线4，和将所接收的信号恢复为可用电平的低噪声放大器6。放大的信号通过混频器8，在此它们从射频转换为较低的中间频率，然后在滤波器10滤波。滤波过的信号通过到达模拟-数字(A/D)转换器12，将信号转换成数字形式，其中它们可以由信号处理器14处理，然后输出到线16上。
用于传输的信号以数字的形式在线18上提供到信号处理器14，然后，处理后，提供到数-模(D/A)转换器20。转换成模拟形式后，信号送到调制器22，转换到射频，然后送到功率放大器24和传输天线26(可与接收天线结合)，作为射频信号传输。
以上概括的收发信机的一般结构与所属领域技术人员已知的类似，但应该明白，可以有不同的改变和改形。
另外，已提出有利的是将这些电路集成于一个芯片上。
本发明人现已认识到，图1所示的收发信机包括两种不同类型的电路，存在着不同的需要，通过在不同类型的电路中采用具有不同阈值电压的晶体管，可以满足这些相互矛盾的需要。这可以使收发信机的性能最佳化，同时仍能使无线电电路形成于一个单片集成电路中，从电话的尺寸和重量方面考虑是有利的。
具体说，有利的是，电路的数字部分例如A/D转换器和D/A转换器利用具有一般(这里有时称之为高)阈值电压的CMOS晶体管形成于例如NMOS器件的+1V区内或PMOS器件的-1V区内。这样，每种情况下阈值电压都可以大于0.5V。相反，有利的是，电路的模拟RF部分例如放大器利用具有降低的阈值电压的CMOS晶体管形成，阈值电压低于0.5V。这可以导致较低的功耗、较低的噪声和较高的带宽。阈值电压最好是降低到接近零，或甚至超过零的范围。这样，NMOS晶体管可以具有小的负阈值电压，而PMOS晶体管可以具有小的正阈值电压。
图1中的虚线28展示了一种目前优选的电路划分。线28右边的电路可以具有高阈值电压的晶体管，而线28左边的电路可以有低阈值电压的晶体管。然而，其它划分也是可以的，实际上可以在同一电路的不同部分采用不同阈值电压的晶体管。
正如美国专利5,407,849所公开的，通过改变半导体器件的所选部分的阈值注入剂量，或通过利用现存的掩模或附加额外的掩模，可以使不同晶体管具有不同的阈值电压。
所以所公开的无线电结构可以集成于一个芯片上，而无需牺牲性能。
图2是本发明的无线电接收机前端电路的示意电路图。如以上简单所述，该电路包括具有不同阈值电压的晶体管。图中，为清楚起见只展示了某些晶体管。图2中，展示了具有厚漏-源沟道且具有降低的阈值电压的晶体管。如上所述，这些器件的阈值电压可以极大地降低，有利的是降低到接近零，或甚至零以下。具有低于零的阈值电压的器件称为耗尽型器件。电路的其余部分是常规的，对于所属领域的技术人来说一般电路的设计是公知的。这些晶体管可以是CMOS器件，或可以是PMOS或NMOS器件。
概括地说，图2的接收机电路包括输入放大级52、本机振荡器激励器54和56及一对混频器58和60。该电路形成一个平衡前端。该电路可以与另一相同电路结合，构成一个双平衡低噪声放大器和混频器。
放大级52包括一对输入晶体管M1和M4，它们分别接地和电源电压Vdd。输入射频信号RFin提供到第一输入晶体管M1的栅，并反相提供到第二输入晶体管M4。放大级52还包括一对共栅晶体管M2和M3，在它们的栅上接收等分的电源电压Vdd/2(M3的情况是反相的)，并且它们的漏-源沟道接到输入晶体管M1和M4的漏-源沟道。
应明白，级联的共栅晶体管M2和M3是低阈值器件。
放大级52的输出提供到由晶体管M5和M6构成的同相混频器58，和由晶体管M7和M8构成的正交混频器60。
同相本机振荡信号LOi提供到晶体管M9的栅，并反相地提供到晶体管M10的栅，晶体管M9和M10接在电源电压Vdd和地之间，这样M9和M10构成本机振荡器激励器54。晶体管M9和M10的输出信号提供到晶体管M8的栅，并反相地提供到晶体管M5的栅。
正交本机振荡信号LOq提供到晶体管M11的栅，并反相地提供到晶体管M12的栅，晶体管M11和M12接在电源电压Vdd和地之间，这样M11和M12构成本机振荡器激励器56。晶体管M11和M12的输出信号提供到晶体管M6的栅，并反相地提供到晶体管M7的栅。
同相混频器58的输出是同相中频信号IFi，正交混频器60的输出是正交中频信号IFq。
应明白，晶体管M5、M6、M7和M8是低阈值器件，而本机振荡器激励晶体管M9、M10、M11和M12是常规阈值型。在本机振荡器激励晶体管的情况下，有利的是，载止态的漏电流应最小化，所以优选采用常规阈值电路晶体管。另外，在VCO中采用具有高或常规阈值电压晶体管的优点是在谐振器上造成了较大的“信号摆动”，因此降低了(相)噪声。
结合图3解释如在放大器52中采用级联的低阈值器件的优点。图3展示了两个级联的晶体管Q1和Q2，它们具有各自的栅-源电压Vgs1和Vgs2。输入信号加到Q1的栅，输出信号在Q2的漏极得到。与阈值电压Vth相比，接地源器件Q1的栅-源电压Vgs1必须至少高到足以使Vgs1-Vth＝1V。否则器件将不会在RF工作。对于Q2来说有类似的考虑，这意味着Q2的栅电压必须设置到至少约2.8V。在3V处理下这是不可能实现的，在较低电源电压的任何处理下几乎是一定不可能实现的。然而，如果阈值电压降低，例如降低到零，2V的栅压对于Q2来说便已足够。
现回到图2的电路中，因此，可以看出，对于级联的共栅晶体管M2和M3采用低阈值器件，可以改善电路的动态范围，或可以允许采用低电源电压。
采用低阈值器件一个潜在的问题是甚至在它们的栅-源电压为零时，它们也将导通(由于亚阈值导通)。图2的放大电路52解决了此问题，其中输入M1和M4是常规阈值型，具有低漏电流。输入晶体管M1和M4也可以具有降低的阈值，在这种情况下可能必需关断电源电流以关断放大器。这种情况下，还可能必需是AC耦合晶体管M1和M4与输入，并分别偏置它们。
下面将结合图4解释如在混频器58和60的传输门采用低阈值器件的优点。具体说，图4展示了由两个晶体管构成的传输门，一个晶体管Q3具有连接到电源电压Vdd的栅，另一晶体管Q4具有接地的栅。对于每个晶体管来说，栅-源电压是Vdd/2。考虑到阈值电压，并忽略反偏效应，有效的栅压是Vdd/2-Vth。对于3V处理，阈值电压为0.8V，这给出了约0.7V的有效栅压。有效栅压变得越低，由于噪声引起的问题越严重。另外，如果电源电压降低，则有效栅压几乎不会高到足以导通栅。如果阈值电压降低到零，则有效栅压变得约等于Vdd/2，约为1.5V，大约是采用常规阈值电压时的两倍。
回到图2的电路，因此，可以看出，对于晶体管M5、M6、M7和M8采用低阈值器件可以降低噪声，还可以减小导通态时器件的电阻。还变得可以采用低电源电压。
采用低阈值器件的一个潜在问题是，甚至在它们的栅-源电压为零时，它们也导通(由于亚阈值导通)。图2中的混频器电路58和60解决了这个问题，其中通过采用等于并与工作电压Vdd/2相反的栅-源电压，可以适当关断每个晶体管。
所以所公开的接收机电路能够在低电源电压下有效地工作，而不会引起由于高漏电流造成的问题。

Claims (19)

1.一种用于数字无线电收发信机的集成电路，该集成电路包括具有高阈值电压的第一MOS晶体管和具有降低的阈值电压的第二MOS晶体管。
2.根据权利要求1的用于数字无线电收发信机的集成电路，其中第二MOS晶体管中的NMOS晶体管具有负阈值电压，第二MOS晶体管中的PMOS晶体管具有正阈值电压。
3.一种包括如权利要求1或2所述的集成电路的移动电话。
4.一种用于数字无线电收发信机的集成电路，该集成电路包括模拟器件和数字器件，模拟器件包括至少其中的一些具有高阈值电压的MOS晶体管，数字器件包括至少其中的一些具有降低的阈值电压的MOS晶体管。
5.一种数字无线电收发信机，包括模拟RF接收机、发送机元件、模-数转换器和数-模转换器，每个都包括MOS晶体管，其中模拟RF接收机、发送机元件、模-数转换器和数-模转换器构成同一集成电路的一部分，其中模-数转换器和数-模转换器中的MOS晶体管具有高阈值电压，模拟元件中的至少一些MOS晶体管具有低阈值电压。
6.包括权利要求5所述的收发信机的移动电话。
7.一种数字无线电收发信机，包括模拟器件和数字器件，每个都包括MOS晶体管，其中数字器件中的MOS晶体管具有高阈值电压，模拟器件中的至少一些晶体管具有低阈值电压。
8.根据权利要求7的数字无线电收发信机，其中模拟器件和数字器件形成为相同集成电路的一部分。
9.一种数字收发信机，包括模拟元件和数字元件，每个都包括MOS晶体管，其中数字元件中的MOS晶体管具有高于模拟元件中的至少一些晶体管的阈值电压。
10.根据权利要求9的数字无线电收发信机，其中模拟元件中的NMOS晶体管具有负阈值电压，模拟元件中PMSO晶体管具有正阈值电压。
11.一种数字无线电收发信机，包括模拟RF接收机、发送机元件、模-数转换器和数-模转换器，每个都包括MOS晶体管，其中模-数转换器和数-模转换器中的MOS晶体管具有高阈值电压，模拟元件中的MOS晶体管具有低阈值电压。
12.根据权利要求11的数字无线电收发信机，其中模拟RF接收机、发送机元件、模-数转换器和数-模转换器形成为相同集成电路的一部分。
13.根据权利要求11或12的数字无线电收发信机，其中模拟RF接收机和发送机元件中的NMOS晶体管具有负阈值电压，模拟RF接收机和发送机元件中的PMOS晶体管具有正阈值电压。
14.一种制造数字无线收发信机集成电路的方法，所说集成电路包括模拟元件和数字元件，每个都包括MOS晶体管，该方法包括改变阈值注入剂量使数字元件中的MOS晶体管具有高阈值电压，使模拟元件中的至少一些MOS晶体管具有低阈值电压。
15.一种无线接收机放大电路，包括一对共栅MOSFET晶体管和一对输入MOSFET晶体管，输入信号加于其上，输入晶体管连接到电源电压和地，共栅晶体管级联在输入晶体管之间，其中共栅晶体管具有降低的阈值电压。
16.根据权利要求15的无线接收机放大电路，其中输入晶体管具有常规阈值。
17.一种射频混频电路，包括一对传输门，每个都包括一对MOSFET晶体管，各本机振荡信号加于各晶体管的栅上，输入信号提供到传输门的输入，其中传输门的各晶体管具有降低的阈值。
18.根据权利要求17的射频混频电路，其中到传输门的本机振荡信号通过一对每对都由一对晶体管管构成的本机振荡器激励器提供，其中本机振荡器激励器的晶体管具有常规阈值。
19.一种包括如权利要求15或16所述的放大器和如权利要求17或18所述的混频器的无线接收机。
CNB98802294XA 1997-02-05 1998-01-26 无线电结构 Expired - Fee Related CN1165998C (zh)

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