CN1243400C - 半导体光电子器件 - Google Patents

半导体光电子器件 Download PDF

Info

Publication number
CN1243400C
CN1243400C CN03147571.XA CN03147571A CN1243400C CN 1243400 C CN1243400 C CN 1243400C CN 03147571 A CN03147571 A CN 03147571A CN 1243400 C CN1243400 C CN 1243400C
Authority
CN
China
Prior art keywords
layer
photoelectronic device
algan
gan
semiconductor photoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN03147571.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1490910A (zh
Inventor
李成男
河镜虎
司空坦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030033842A external-priority patent/KR100755621B1/ko
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of CN1490910A publication Critical patent/CN1490910A/zh
Application granted granted Critical
Publication of CN1243400C publication Critical patent/CN1243400C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
CN03147571.XA 2002-10-17 2003-07-24 半导体光电子器件 Expired - Lifetime CN1243400C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20020063539 2002-10-17
KR63539/02 2002-10-17
KR63539/2002 2002-10-17
KR33842/2003 2003-05-27
KR33842/03 2003-05-27
KR1020030033842A KR100755621B1 (ko) 2002-10-17 2003-05-27 반도체 광전 소자

Publications (2)

Publication Number Publication Date
CN1490910A CN1490910A (zh) 2004-04-21
CN1243400C true CN1243400C (zh) 2006-02-22

Family

ID=36096134

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03147571.XA Expired - Lifetime CN1243400C (zh) 2002-10-17 2003-07-24 半导体光电子器件

Country Status (4)

Country Link
US (1) US7058105B2 (enExample)
EP (1) EP1411559B1 (enExample)
JP (2) JP2004140370A (enExample)
CN (1) CN1243400C (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100525545B1 (ko) * 2003-06-25 2005-10-31 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
EP1619729B1 (en) * 2004-04-16 2010-02-10 Nitride Semiconductors Co., Ltd. Gallium nitride based light-emitting device
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
PL211286B1 (pl) * 2004-08-15 2012-04-30 Inst Wysokich Ciśnień Polskiej Akademii Nauk Azotkowa dioda laserowa i sposób wytwarzania azotkowej diody laserowej
JP2006270028A (ja) * 2005-02-25 2006-10-05 Mitsubishi Electric Corp 半導体発光素子
KR100837404B1 (ko) * 2006-10-18 2008-06-12 삼성전자주식회사 반도체 광전 소자
KR100862497B1 (ko) * 2006-12-26 2008-10-08 삼성전기주식회사 질화물 반도체 소자
US8144743B2 (en) * 2008-03-05 2012-03-27 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same
JP4572963B2 (ja) * 2008-07-09 2010-11-04 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子、及びエピタキシャルウエハ
TWI566431B (zh) * 2008-07-24 2017-01-11 榮創能源科技股份有限公司 組合式電子阻擋層發光元件
US7983317B2 (en) 2008-12-16 2011-07-19 Corning Incorporated MQW laser structure comprising plural MQW regions
JP2010177651A (ja) * 2009-02-02 2010-08-12 Rohm Co Ltd 半導体レーザ素子
TWI487141B (zh) * 2009-07-15 2015-06-01 榮創能源科技股份有限公司 提高光萃取效率之半導體光電結構及其製造方法
DE102009040438A1 (de) * 2009-07-24 2011-01-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper mit einer Quantentopfstruktur
US7965752B1 (en) * 2009-11-30 2011-06-21 Corning Incorporated Native green laser semiconductor devices
US20110188528A1 (en) * 2010-02-04 2011-08-04 Ostendo Technologies, Inc. High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters
DE102010009457A1 (de) * 2010-02-26 2011-09-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN102201505A (zh) * 2011-05-03 2011-09-28 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
JP2011187993A (ja) * 2011-06-15 2011-09-22 Sumitomo Electric Ind Ltd 半導体発光素子および半導体発光素子の製造方法
CN102412351B (zh) * 2011-10-27 2016-06-22 华灿光电股份有限公司 提高ESD的复合n-GaN层结构的制备方法
JP5723320B2 (ja) * 2012-04-26 2015-05-27 日本電信電話株式会社 光変調導波路
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
JP2016517627A (ja) * 2013-03-15 2016-06-16 ソイテックＳｏｉｔｅｃ ＩｎＧａＮを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス
TWI648872B (zh) 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
FR3004585B1 (fr) * 2013-04-12 2017-12-29 Soitec Silicon On Insulator Structures semi-conductrices dotees de regions actives comprenant de l'ingan
FR3003397B1 (fr) 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
FR3009894B1 (fr) * 2013-08-22 2016-12-30 Commissariat Energie Atomique Diode electroluminescente dont une zone active comporte des couches d'inn
KR20160033815A (ko) 2014-09-18 2016-03-29 삼성전자주식회사 반도체 발광소자
CN104734015B (zh) * 2015-02-02 2018-03-23 中国科学院半导体研究所 具有非对称Al组分AlGaN限制层的氮化镓基激光器
KR102390624B1 (ko) 2015-06-05 2022-04-26 오스텐도 테크놀로지스 인코포레이티드 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체
US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
DE102016122147B4 (de) 2016-11-17 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
CN107331738B (zh) * 2017-05-12 2019-12-06 华灿光电股份有限公司 一种发光二极管外延片的制造方法
WO2019130655A1 (ja) * 2017-12-26 2019-07-04 パナソニック株式会社 窒化物半導体レーザ素子
CN110323670A (zh) * 2019-06-25 2019-10-11 中国科学院苏州纳米技术与纳米仿生研究所 半导体激光器及其激光谐振腔、光学限制结构
CN112234436B (zh) * 2020-12-14 2021-03-09 陕西源杰半导体技术有限公司 半导体器件及其制备方法
US12444907B2 (en) * 2022-04-18 2025-10-14 Epistar Corporation Light-emitting device
CN116667147A (zh) * 2023-05-26 2023-08-29 安徽格恩半导体有限公司 一种内置拓扑平带层的半导体激光元件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0530942B1 (en) * 1991-09-06 1997-10-22 Trw Inc. Novel quantum well optoelectric switching device with stimulated emission
US5583878A (en) * 1993-06-23 1996-12-10 The Furukawa Electric Co., Ltd. Semiconductor optical device
JPH08213699A (ja) * 1994-11-11 1996-08-20 Matsushita Electric Ind Co Ltd 半導体レーザー
US5889805A (en) * 1996-11-01 1999-03-30 Coherent, Inc. Low-threshold high-efficiency laser diodes with aluminum-free active region
JPH11340580A (ja) * 1997-07-30 1999-12-10 Fujitsu Ltd 半導体レーザ、半導体発光素子、及び、その製造方法
JPH1174621A (ja) * 1997-08-29 1999-03-16 Toshiba Corp 窒化物系半導体発光素子
US6266355B1 (en) * 1997-09-12 2001-07-24 Sdl, Inc. Group III-V nitride laser devices with cladding layers to suppress defects such as cracking
JP2000151023A (ja) * 1998-11-05 2000-05-30 Fujitsu Ltd 半導体発光装置
GB2346735B (en) 1999-02-13 2004-03-31 Sharp Kk A semiconductor laser device
JP2000340892A (ja) 1999-05-26 2000-12-08 Nec Corp 化合物半導体装置及びその製造方法
JP4850324B2 (ja) * 1999-07-16 2012-01-11 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド 窒化物半導体素子および窒化物半導体レーザ素子
KR100425341B1 (ko) * 2000-02-08 2004-03-31 삼성전기주식회사 질화물 반도체 발광 소자
JP4315583B2 (ja) 2000-09-19 2009-08-19 パイオニア株式会社 Ｉｉｉ族窒化物系半導体レーザ素子
JP3864735B2 (ja) * 2000-12-28 2007-01-10 ソニー株式会社 半導体発光素子およびその製造方法
JP4291960B2 (ja) * 2001-03-09 2009-07-08 日亜化学工業株式会社 窒化物半導体素子
MY129352A (en) * 2001-03-28 2007-03-30 Nichia Corp Nitride semiconductor device
SG115549A1 (en) * 2002-07-08 2005-10-28 Sumitomo Chemical Co Epitaxial substrate for compound semiconductor light emitting device, method for producing the same and light emitting device

Also Published As

Publication number Publication date
US7058105B2 (en) 2006-06-06
JP2011035427A (ja) 2011-02-17
EP1411559A2 (en) 2004-04-21
JP2004140370A (ja) 2004-05-13
CN1490910A (zh) 2004-04-21
US20040125839A1 (en) 2004-07-01
EP1411559A3 (en) 2006-06-07
EP1411559B1 (en) 2012-01-04

Similar Documents

Publication Publication Date Title
CN1243400C (zh) 半导体光电子器件
CN101165979B (zh) 半导体光电器件
KR100664985B1 (ko) 질화물계 반도체 소자
CN100359707C (zh) 氮化镓系发光器件
JP5242039B2 (ja) 窒化物半導体発光素子
US20070045655A1 (en) Nitride semiconductor light emitting device
KR100604406B1 (ko) 질화물 반도체 소자
KR100979701B1 (ko) 변조도핑층을 갖는 발광 다이오드
CN1845347A (zh) 氮化物半导体器件
KR100826422B1 (ko) 질화물 반도체 소자
KR101025971B1 (ko) 질화물 반도체 발광소자
KR101368687B1 (ko) 초격자 구조를 이용한 질화물계 반도체 발광 소자의 제조 방법
KR20120071572A (ko) 다중양자우물 구조의 활성 영역을 갖는 발광 소자
KR101134408B1 (ko) 발광 소자
KR101043345B1 (ko) 질화물 반도체 소자
KR20100024154A (ko) 발광 다이오드
JP4884826B2 (ja) 半導体発光素子
KR101393914B1 (ko) 질화물 반도체 발광소자 및 그 제조방법
KR20060031582A (ko) 질화갈륨계 발광장치
KR100755621B1 (ko) 반도체 광전 소자
KR101134407B1 (ko) 발광 소자
JP3972943B2 (ja) 窒化ガリウム系化合物半導体発光素子
KR102531349B1 (ko) 발광소자
KR20100022593A (ko) 발광 다이오드

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SAMSUNG ELECTRO-MECHANICS CO., LTD

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD

Effective date: 20041231

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20041231

Address after: Gyeonggi Do, South Korea

Applicant after: Samsung Electro-Mechanics Co.,Ltd.

Address before: Gyeonggi Do, South Korea

Applicant before: Samsung Electronics Co.,Ltd.

C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG LED CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Effective date: 20100909

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: GYEONGGI-DO, KOREA TO: SUWON-SI, GYEONGGI-DO, KOREA

TR01 Transfer of patent right

Effective date of registration: 20100909

Address after: Gyeonggi Do Korea Suwon

Patentee after: Samsung LED Co.,Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electro-Mechanics Co.,Ltd.

ASS Succession or assignment of patent right

Owner name: SAMSUNG ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: SAMSUNG LED CO., LTD.

Effective date: 20121205

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121205

Address after: Gyeonggi Do, South Korea

Patentee after: SAMSUNG ELECTRONICS Co.,Ltd.

Address before: Gyeonggi Do Korea Suwon

Patentee before: Samsung LED Co.,Ltd.

CX01 Expiry of patent term

Granted publication date: 20060222

CX01 Expiry of patent term