CN1236993A - 动态随机存取存储器单元电容器及其制造方法 - Google Patents

动态随机存取存储器单元电容器及其制造方法 Download PDF

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Publication number
CN1236993A
CN1236993A CN99105863A CN99105863A CN1236993A CN 1236993 A CN1236993 A CN 1236993A CN 99105863 A CN99105863 A CN 99105863A CN 99105863 A CN99105863 A CN 99105863A CN 1236993 A CN1236993 A CN 1236993A
Authority
CN
China
Prior art keywords
insulating barrier
layer
conductive pole
approximately
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN99105863A
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English (en)
Chinese (zh)
Inventor
林炳俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1236993A publication Critical patent/CN1236993A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
CN99105863A 1998-04-25 1999-04-23 动态随机存取存储器单元电容器及其制造方法 Pending CN1236993A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR14851/98 1998-04-25
KR1019980014851A KR100270210B1 (ko) 1998-04-25 1998-04-25 디램 셀 커패시터 및 그의 제조 방법

Publications (1)

Publication Number Publication Date
CN1236993A true CN1236993A (zh) 1999-12-01

Family

ID=19536714

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99105863A Pending CN1236993A (zh) 1998-04-25 1999-04-23 动态随机存取存储器单元电容器及其制造方法

Country Status (7)

Country Link
JP (1) JP2000022099A (fr)
KR (1) KR100270210B1 (fr)
CN (1) CN1236993A (fr)
DE (1) DE19908446A1 (fr)
FR (1) FR2778019A1 (fr)
GB (1) GB2336716B (fr)
TW (1) TW412828B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100405589C (zh) * 2003-06-25 2008-07-23 三星电子株式会社 半导体器件及其制造方法
CN106206586A (zh) * 2015-04-30 2016-12-07 联华电子股份有限公司 静态随机存取存储器

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426249B1 (en) * 2000-03-16 2002-07-30 International Business Machines Corporation Buried metal dual damascene plate capacitor
KR100502410B1 (ko) * 2002-07-08 2005-07-19 삼성전자주식회사 디램 셀들
KR100510527B1 (ko) 2003-05-01 2005-08-26 삼성전자주식회사 스토리지 전극을 포함하는 반도체 소자 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438011A (en) * 1995-03-03 1995-08-01 Micron Technology, Inc. Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples
JP2776331B2 (ja) * 1995-09-29 1998-07-16 日本電気株式会社 半導体装置およびその製造方法
US5643819A (en) * 1995-10-30 1997-07-01 Vanguard International Semiconductor Corporation Method of fabricating fork-shaped stacked capacitors for DRAM cells
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
US5744833A (en) * 1996-08-16 1998-04-28 United Microelectronics Corporation Semiconductor memory device having tree-type capacitor
GB2322964B (en) * 1997-03-07 2001-10-17 United Microelectronics Corp Polysilicon CMP process for high-density DRAM cell structures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100405589C (zh) * 2003-06-25 2008-07-23 三星电子株式会社 半导体器件及其制造方法
CN106206586A (zh) * 2015-04-30 2016-12-07 联华电子股份有限公司 静态随机存取存储器

Also Published As

Publication number Publication date
GB9905192D0 (en) 1999-04-28
GB2336716A (en) 1999-10-27
TW412828B (en) 2000-11-21
JP2000022099A (ja) 2000-01-21
GB2336716B (en) 2000-11-15
KR19990081113A (ko) 1999-11-15
FR2778019A1 (fr) 1999-10-29
DE19908446A1 (de) 1999-11-04
KR100270210B1 (ko) 2000-10-16

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