CN1236993A - 动态随机存取存储器单元电容器及其制造方法 - Google Patents
动态随机存取存储器单元电容器及其制造方法 Download PDFInfo
- Publication number
- CN1236993A CN1236993A CN99105863A CN99105863A CN1236993A CN 1236993 A CN1236993 A CN 1236993A CN 99105863 A CN99105863 A CN 99105863A CN 99105863 A CN99105863 A CN 99105863A CN 1236993 A CN1236993 A CN 1236993A
- Authority
- CN
- China
- Prior art keywords
- insulating barrier
- layer
- conductive pole
- approximately
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 24
- 239000003990 capacitor Substances 0.000 title abstract description 23
- 238000003860 storage Methods 0.000 claims abstract description 66
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 85
- 229920005591 polysilicon Polymers 0.000 claims description 82
- 239000000463 material Substances 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR14851/98 | 1998-04-25 | ||
KR1019980014851A KR100270210B1 (ko) | 1998-04-25 | 1998-04-25 | 디램 셀 커패시터 및 그의 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1236993A true CN1236993A (zh) | 1999-12-01 |
Family
ID=19536714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99105863A Pending CN1236993A (zh) | 1998-04-25 | 1999-04-23 | 动态随机存取存储器单元电容器及其制造方法 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP2000022099A (fr) |
KR (1) | KR100270210B1 (fr) |
CN (1) | CN1236993A (fr) |
DE (1) | DE19908446A1 (fr) |
FR (1) | FR2778019A1 (fr) |
GB (1) | GB2336716B (fr) |
TW (1) | TW412828B (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100405589C (zh) * | 2003-06-25 | 2008-07-23 | 三星电子株式会社 | 半导体器件及其制造方法 |
CN106206586A (zh) * | 2015-04-30 | 2016-12-07 | 联华电子股份有限公司 | 静态随机存取存储器 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6426249B1 (en) * | 2000-03-16 | 2002-07-30 | International Business Machines Corporation | Buried metal dual damascene plate capacitor |
KR100502410B1 (ko) * | 2002-07-08 | 2005-07-19 | 삼성전자주식회사 | 디램 셀들 |
KR100510527B1 (ko) | 2003-05-01 | 2005-08-26 | 삼성전자주식회사 | 스토리지 전극을 포함하는 반도체 소자 및 그 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5438011A (en) * | 1995-03-03 | 1995-08-01 | Micron Technology, Inc. | Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples |
JP2776331B2 (ja) * | 1995-09-29 | 1998-07-16 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5643819A (en) * | 1995-10-30 | 1997-07-01 | Vanguard International Semiconductor Corporation | Method of fabricating fork-shaped stacked capacitors for DRAM cells |
US5721154A (en) * | 1996-06-18 | 1998-02-24 | Vanguard International Semiconductor | Method for fabricating a four fin capacitor structure |
US5744833A (en) * | 1996-08-16 | 1998-04-28 | United Microelectronics Corporation | Semiconductor memory device having tree-type capacitor |
GB2322964B (en) * | 1997-03-07 | 2001-10-17 | United Microelectronics Corp | Polysilicon CMP process for high-density DRAM cell structures |
-
1998
- 1998-04-25 KR KR1019980014851A patent/KR100270210B1/ko not_active IP Right Cessation
-
1999
- 1999-01-27 TW TW088101191A patent/TW412828B/zh active
- 1999-02-26 DE DE19908446A patent/DE19908446A1/de not_active Withdrawn
- 1999-03-05 GB GB9905192A patent/GB2336716B/en not_active Expired - Fee Related
- 1999-03-31 FR FR9904014A patent/FR2778019A1/fr not_active Withdrawn
- 1999-04-23 CN CN99105863A patent/CN1236993A/zh active Pending
- 1999-04-23 JP JP11117080A patent/JP2000022099A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100405589C (zh) * | 2003-06-25 | 2008-07-23 | 三星电子株式会社 | 半导体器件及其制造方法 |
CN106206586A (zh) * | 2015-04-30 | 2016-12-07 | 联华电子股份有限公司 | 静态随机存取存储器 |
Also Published As
Publication number | Publication date |
---|---|
GB9905192D0 (en) | 1999-04-28 |
GB2336716A (en) | 1999-10-27 |
TW412828B (en) | 2000-11-21 |
JP2000022099A (ja) | 2000-01-21 |
GB2336716B (en) | 2000-11-15 |
KR19990081113A (ko) | 1999-11-15 |
FR2778019A1 (fr) | 1999-10-29 |
DE19908446A1 (de) | 1999-11-04 |
KR100270210B1 (ko) | 2000-10-16 |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |