GB9905192D0 - Dram cell capacitor and method for fabricating therof - Google Patents

Dram cell capacitor and method for fabricating therof

Info

Publication number
GB9905192D0
GB9905192D0 GBGB9905192.2A GB9905192A GB9905192D0 GB 9905192 D0 GB9905192 D0 GB 9905192D0 GB 9905192 A GB9905192 A GB 9905192A GB 9905192 D0 GB9905192 D0 GB 9905192D0
Authority
GB
United Kingdom
Prior art keywords
therof
fabricating
dram cell
cell capacitor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9905192.2A
Other versions
GB2336716A (en
GB2336716B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9905192D0 publication Critical patent/GB9905192D0/en
Publication of GB2336716A publication Critical patent/GB2336716A/en
Application granted granted Critical
Publication of GB2336716B publication Critical patent/GB2336716B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
GB9905192A 1998-04-25 1999-03-05 DRAM cell capacitor and method for the fabrication thereof Expired - Fee Related GB2336716B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980014851A KR100270210B1 (en) 1998-04-25 1998-04-25 DRAM cell capacitor and method of manufacturing the same

Publications (3)

Publication Number Publication Date
GB9905192D0 true GB9905192D0 (en) 1999-04-28
GB2336716A GB2336716A (en) 1999-10-27
GB2336716B GB2336716B (en) 2000-11-15

Family

ID=19536714

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9905192A Expired - Fee Related GB2336716B (en) 1998-04-25 1999-03-05 DRAM cell capacitor and method for the fabrication thereof

Country Status (7)

Country Link
JP (1) JP2000022099A (en)
KR (1) KR100270210B1 (en)
CN (1) CN1236993A (en)
DE (1) DE19908446A1 (en)
FR (1) FR2778019A1 (en)
GB (1) GB2336716B (en)
TW (1) TW412828B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426249B1 (en) * 2000-03-16 2002-07-30 International Business Machines Corporation Buried metal dual damascene plate capacitor
KR100502410B1 (en) 2002-07-08 2005-07-19 삼성전자주식회사 DRAM cells
KR100510527B1 (en) 2003-05-01 2005-08-26 삼성전자주식회사 Semiconductor device having storage node and method for manufacturing the same
KR100545865B1 (en) * 2003-06-25 2006-01-24 삼성전자주식회사 Semiconductor device and manufacturing method thereof
CN114156271A (en) * 2015-04-30 2022-03-08 联华电子股份有限公司 Static random access memory

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438011A (en) * 1995-03-03 1995-08-01 Micron Technology, Inc. Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples
JP2776331B2 (en) * 1995-09-29 1998-07-16 日本電気株式会社 Semiconductor device and manufacturing method thereof
US5643819A (en) * 1995-10-30 1997-07-01 Vanguard International Semiconductor Corporation Method of fabricating fork-shaped stacked capacitors for DRAM cells
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
US5744833A (en) * 1996-08-16 1998-04-28 United Microelectronics Corporation Semiconductor memory device having tree-type capacitor
GB2322964B (en) * 1997-03-07 2001-10-17 United Microelectronics Corp Polysilicon CMP process for high-density DRAM cell structures

Also Published As

Publication number Publication date
KR19990081113A (en) 1999-11-15
TW412828B (en) 2000-11-21
KR100270210B1 (en) 2000-10-16
GB2336716A (en) 1999-10-27
GB2336716B (en) 2000-11-15
FR2778019A1 (en) 1999-10-29
JP2000022099A (en) 2000-01-21
DE19908446A1 (en) 1999-11-04
CN1236993A (en) 1999-12-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100305