CN1226082A - 制造具有半球晶粒结构的半导体器件的方法 - Google Patents
制造具有半球晶粒结构的半导体器件的方法 Download PDFInfo
- Publication number
- CN1226082A CN1226082A CN99100573A CN99100573A CN1226082A CN 1226082 A CN1226082 A CN 1226082A CN 99100573 A CN99100573 A CN 99100573A CN 99100573 A CN99100573 A CN 99100573A CN 1226082 A CN1226082 A CN 1226082A
- Authority
- CN
- China
- Prior art keywords
- layer
- semiconductor
- semiconductor layer
- dopant
- grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22005/1998 | 1998-02-03 | ||
JP02200598A JP3191757B2 (ja) | 1998-02-03 | 1998-02-03 | 半導体装置の製造方法 |
JP22005/98 | 1998-02-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1226082A true CN1226082A (zh) | 1999-08-18 |
CN1144282C CN1144282C (zh) | 2004-03-31 |
Family
ID=12070903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991005732A Expired - Fee Related CN1144282C (zh) | 1998-02-03 | 1999-02-03 | 制造具有半球晶粒结构的半导体器件的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6221730B1 (zh) |
JP (1) | JP3191757B2 (zh) |
KR (1) | KR100338848B1 (zh) |
CN (1) | CN1144282C (zh) |
GB (1) | GB2334146B (zh) |
TW (1) | TW409404B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100663338B1 (ko) * | 1999-11-24 | 2007-01-02 | 삼성전자주식회사 | 메모리 셀의 캐패시터 제조 방법 |
US6780704B1 (en) * | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
JP3706811B2 (ja) * | 2000-06-14 | 2005-10-19 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、及び半導体製造装置 |
JP2002043547A (ja) | 2000-07-28 | 2002-02-08 | Nec Kyushu Ltd | 半導体装置およびその製造方法 |
KR100537193B1 (ko) * | 2000-08-31 | 2005-12-16 | 주식회사 하이닉스반도체 | 캐패시터의 제조 방법 |
US6403455B1 (en) * | 2000-08-31 | 2002-06-11 | Samsung Austin Semiconductor, L.P. | Methods of fabricating a memory device |
KR20020058295A (ko) * | 2000-12-29 | 2002-07-12 | 박종섭 | 반도체소자의 제조방법 |
US6451664B1 (en) * | 2001-01-30 | 2002-09-17 | Infineon Technologies Ag | Method of making a MIM capacitor with self-passivating plates |
US6794245B2 (en) * | 2002-07-18 | 2004-09-21 | Micron Technology, Inc. | Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules |
US6949442B2 (en) * | 2003-05-05 | 2005-09-27 | Infineon Technologies Ag | Methods of forming MIM capacitors |
IL157838A (en) * | 2003-09-10 | 2013-05-30 | Yaakov Amitai | High-brightness optical device |
KR100712355B1 (ko) | 2005-10-24 | 2007-05-02 | 동부일렉트로닉스 주식회사 | 반도체 소자의 캐패시터 및 그 제조 방법 |
CN102222606B (zh) * | 2010-04-14 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 一种电容的形成方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144820A (ja) | 1984-12-19 | 1986-07-02 | Toyo Electric Mfg Co Ltd | 中濃度拡散層の形成法 |
JPH01291424A (ja) | 1988-05-19 | 1989-11-24 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2508948B2 (ja) | 1991-06-21 | 1996-06-19 | 日本電気株式会社 | 半導体装置の製造方法 |
US5696014A (en) | 1994-03-11 | 1997-12-09 | Micron Semiconductor, Inc. | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch |
JPH08264475A (ja) | 1995-03-22 | 1996-10-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2827958B2 (ja) | 1995-04-27 | 1998-11-25 | 日本電気株式会社 | 半導体記憶装置の容量素子の製造方法 |
KR970018571A (ko) * | 1995-09-21 | 1997-04-30 | 김광호 | 반도체 메모리장치의 커패시터 제조방법 |
KR970018542A (ko) * | 1995-09-29 | 1997-04-30 | 김광호 | 반도체 장치의 캐패시터 제조방법 |
JP3082691B2 (ja) | 1995-12-25 | 2000-08-28 | 日本電気株式会社 | 半導体装置及びその製造方法 |
KR970054549A (ko) * | 1995-12-27 | 1997-07-31 | 김광호 | 반도체 장치의 커패시터 제조방법 |
JPH09232529A (ja) * | 1996-02-21 | 1997-09-05 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
JPH09232245A (ja) | 1996-02-23 | 1997-09-05 | Hitachi Denshi Ltd | 半導体装置の製造方法 |
JPH09246201A (ja) | 1996-03-07 | 1997-09-19 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP3156590B2 (ja) | 1996-06-28 | 2001-04-16 | 日本電気株式会社 | 半導体装置及びその製造方法 |
-
1998
- 1998-02-03 JP JP02200598A patent/JP3191757B2/ja not_active Expired - Fee Related
-
1999
- 1999-02-01 TW TW088101539A patent/TW409404B/zh not_active IP Right Cessation
- 1999-02-02 US US09/243,300 patent/US6221730B1/en not_active Expired - Lifetime
- 1999-02-02 KR KR1019990003339A patent/KR100338848B1/ko not_active IP Right Cessation
- 1999-02-03 CN CNB991005732A patent/CN1144282C/zh not_active Expired - Fee Related
- 1999-02-03 GB GB9902408A patent/GB2334146B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW409404B (en) | 2000-10-21 |
JP3191757B2 (ja) | 2001-07-23 |
CN1144282C (zh) | 2004-03-31 |
US6221730B1 (en) | 2001-04-24 |
GB2334146A (en) | 1999-08-11 |
GB2334146B (en) | 2002-10-30 |
KR19990072366A (ko) | 1999-09-27 |
GB9902408D0 (en) | 1999-03-24 |
KR100338848B1 (ko) | 2002-05-30 |
JPH11220107A (ja) | 1999-08-10 |
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Legal Events
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030418 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030418 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040331 Termination date: 20100303 |