CN1216425C - 强电介质存储装置及其制造方法以及混载装置 - Google Patents

强电介质存储装置及其制造方法以及混载装置 Download PDF

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Publication number
CN1216425C
CN1216425C CN018027881A CN01802788A CN1216425C CN 1216425 C CN1216425 C CN 1216425C CN 018027881 A CN018027881 A CN 018027881A CN 01802788 A CN01802788 A CN 01802788A CN 1216425 C CN1216425 C CN 1216425C
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China
Prior art keywords
ferroelectric
layer
signal electrode
storage device
substrate
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Expired - Fee Related
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CN018027881A
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English (en)
Chinese (zh)
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CN1393037A (zh
Inventor
长谷川和正
名取荣治
西川尚男
小口幸一
下田达也
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Seiko Epson Corp
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Seiko Epson Corp
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Publication of CN1393037A publication Critical patent/CN1393037A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
CN018027881A 2000-09-18 2001-08-21 强电介质存储装置及其制造方法以及混载装置 Expired - Fee Related CN1216425C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP281725/2000 2000-09-18
JP2000281725A JP3940883B2 (ja) 2000-09-18 2000-09-18 強誘電体メモリ装置の製造方法

Related Child Applications (1)

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CNB2005100525871A Division CN100352039C (zh) 2000-09-18 2001-08-21 强电介质存储装置及其制造方法

Publications (2)

Publication Number Publication Date
CN1393037A CN1393037A (zh) 2003-01-22
CN1216425C true CN1216425C (zh) 2005-08-24

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CN018027881A Expired - Fee Related CN1216425C (zh) 2000-09-18 2001-08-21 强电介质存储装置及其制造方法以及混载装置
CNB2005100525871A Expired - Fee Related CN100352039C (zh) 2000-09-18 2001-08-21 强电介质存储装置及其制造方法

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CNB2005100525871A Expired - Fee Related CN100352039C (zh) 2000-09-18 2001-08-21 强电介质存储装置及其制造方法

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US (2) US6727536B2 (enExample)
EP (1) EP1263048B1 (enExample)
JP (1) JP3940883B2 (enExample)
CN (2) CN1216425C (enExample)
WO (1) WO2002023635A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498364B1 (en) * 2000-01-21 2002-12-24 Agere Systems Inc. Capacitor for integration with copper damascene processes
JP3940883B2 (ja) * 2000-09-18 2007-07-04 セイコーエプソン株式会社 強誘電体メモリ装置の製造方法
US20030001188A1 (en) * 2001-06-27 2003-01-02 Nakagawa Osamu Samuel High-dielectric constant metal-insulator metal capacitor in VLSI multi-level metallization systems
US7727777B2 (en) * 2002-05-31 2010-06-01 Ebrahim Andideh Forming ferroelectric polymer memories
JP2004031728A (ja) * 2002-06-27 2004-01-29 Matsushita Electric Ind Co Ltd 記憶装置
JP4525889B2 (ja) * 2002-08-14 2010-08-18 セイコーエプソン株式会社 強誘電体メモリ、強誘電体メモリの製造方法、及び半導体装置の製造方法
US7220985B2 (en) * 2002-12-09 2007-05-22 Spansion, Llc Self aligned memory element and wordline
US6774004B1 (en) * 2003-03-17 2004-08-10 Sharp Laboratories Of America, Inc. Nano-scale resistance cross-point memory array
US6977402B2 (en) 2003-03-25 2005-12-20 Sanyo Electric Co., Ltd. Memory device having storage part and thin-film part
JP3920827B2 (ja) * 2003-09-08 2007-05-30 三洋電機株式会社 半導体記憶装置
WO2005074032A1 (ja) * 2004-01-28 2005-08-11 Fujitsu Limited 半導体装置及びその製造方法
KR100709462B1 (ko) * 2004-02-16 2007-04-18 주식회사 하이닉스반도체 다층 나노 튜브 셀을 이용한 메모리 장치
JP4880894B2 (ja) * 2004-11-17 2012-02-22 シャープ株式会社 半導体記憶装置の構造及びその製造方法
US7212431B2 (en) 2004-12-29 2007-05-01 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device and control method thereof
KR100590580B1 (ko) * 2005-03-21 2006-06-19 삼성전자주식회사 패턴된 강유전체 미디어의 제조방법
KR100689842B1 (ko) * 2006-01-06 2007-03-08 삼성전자주식회사 강유전체막을 정보저장요소로 채택하는 플래시 메모리소자들 및 그 제조방법들
EP2016591A1 (en) * 2006-04-28 2009-01-21 Agfa-Gevaert Conventionally printable non-volatile passive memory element and method of making thereof.
JP5010192B2 (ja) 2006-06-22 2012-08-29 株式会社東芝 不揮発性半導体記憶装置
FR2925748B1 (fr) * 2007-12-21 2010-01-29 Commissariat Energie Atomique Support de stockage de donnees et procede associe
KR102092776B1 (ko) * 2013-11-20 2020-03-24 에스케이하이닉스 주식회사 전자 장치
US10211258B2 (en) * 2014-04-14 2019-02-19 HangZhou HaiCun Information Technology Co., Ltd. Manufacturing methods of JFET-type compact three-dimensional memory
US10199432B2 (en) * 2014-04-14 2019-02-05 HangZhou HaiCun Information Technology Co., Ltd. Manufacturing methods of MOSFET-type compact three-dimensional memory
US10068918B2 (en) 2015-09-21 2018-09-04 Globalfoundries Inc. Contacting SOI subsrates
US12324163B1 (en) 2022-03-15 2025-06-03 Kepler Computing Inc. Planar capacitors with shared electrode and methods of fabrication
US12289894B1 (en) 2022-06-17 2025-04-29 Kepler Computing Inc. Method of fabricating transistors and stacked planar capacitors for memory and logic applications
US12300297B1 (en) 2022-08-05 2025-05-13 Kepler Computing Inc. Memory array with buried or backside word-line
US12062584B1 (en) 2022-10-28 2024-08-13 Kepler Computing Inc. Iterative method of multilayer stack development for device applications
US11741428B1 (en) 2022-12-23 2023-08-29 Kepler Computing Inc. Iterative monetization of process development of non-linear polar material and devices
US11765908B1 (en) 2023-02-10 2023-09-19 Kepler Computing Inc. Memory device fabrication through wafer bonding
US20240274651A1 (en) 2023-02-10 2024-08-15 Kepler Computing Inc. Method of forming stacked capacitors through wafer bonding

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
JP3570692B2 (ja) * 1994-01-18 2004-09-29 ローム株式会社 不揮発性メモリ
JP3480110B2 (ja) * 1995-03-15 2003-12-15 ソニー株式会社 半導体メモリ及びその作製方法
JPH0991970A (ja) * 1995-09-26 1997-04-04 Olympus Optical Co Ltd 非破壊型強誘電体メモリ及びその駆動方法
JPH09102587A (ja) * 1995-10-05 1997-04-15 Olympus Optical Co Ltd 強誘電体薄膜素子
JPH1098162A (ja) * 1996-09-20 1998-04-14 Hitachi Ltd 半導体集積回路装置の製造方法
KR100370416B1 (ko) * 1996-10-31 2003-04-08 삼성전기주식회사 고밀도 데이터의 기록/재생을 위한 부호화/복호화 방법 및 그에 따른 장치
NO309500B1 (no) * 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
DE19744095A1 (de) * 1997-10-06 1999-04-15 Siemens Ag Speicherzellenanordnung
JP2000004001A (ja) * 1998-06-15 2000-01-07 Toshiba Corp 半導体記憶装置及びその製造方法
US6351406B1 (en) * 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
JP2002026280A (ja) 2000-06-30 2002-01-25 Seiko Epson Corp 強誘電体メモリ及びその製造方法
JP3915868B2 (ja) * 2000-07-07 2007-05-16 セイコーエプソン株式会社 強誘電体メモリ装置およびその製造方法
JP3940883B2 (ja) * 2000-09-18 2007-07-04 セイコーエプソン株式会社 強誘電体メモリ装置の製造方法

Also Published As

Publication number Publication date
EP1263048A1 (en) 2002-12-04
US7169621B2 (en) 2007-01-30
JP2002094020A (ja) 2002-03-29
EP1263048B1 (en) 2007-05-30
US20020036934A1 (en) 2002-03-28
CN100352039C (zh) 2007-11-28
US20040161887A1 (en) 2004-08-19
WO2002023635A1 (en) 2002-03-21
CN1393037A (zh) 2003-01-22
EP1263048A4 (en) 2005-04-27
US6727536B2 (en) 2004-04-27
JP3940883B2 (ja) 2007-07-04
CN1652325A (zh) 2005-08-10

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