CN1211864C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1211864C
CN1211864C CNB031002978A CN03100297A CN1211864C CN 1211864 C CN1211864 C CN 1211864C CN B031002978 A CNB031002978 A CN B031002978A CN 03100297 A CN03100297 A CN 03100297A CN 1211864 C CN1211864 C CN 1211864C
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CN
China
Prior art keywords
gate
gate electrode
source
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031002978A
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English (en)
Chinese (zh)
Other versions
CN1431715A (zh
Inventor
小泽良夫
田中正幸
宫野清孝
斋田繁彦
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Toshiba Corp
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Toshiba Corp
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Publication date
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Publication of CN1431715A publication Critical patent/CN1431715A/zh
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Publication of CN1211864C publication Critical patent/CN1211864C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric

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  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB031002978A 2002-01-10 2003-01-09 半导体器件及其制造方法 Expired - Fee Related CN1211864C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002003192A JP2003204063A (ja) 2002-01-10 2002-01-10 半導体装置及びその製造方法
JP003192/2002 2002-01-10

Publications (2)

Publication Number Publication Date
CN1431715A CN1431715A (zh) 2003-07-23
CN1211864C true CN1211864C (zh) 2005-07-20

Family

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Family Applications (1)

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CNB031002978A Expired - Fee Related CN1211864C (zh) 2002-01-10 2003-01-09 半导体器件及其制造方法

Country Status (3)

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US (2) US20030127695A1 (enExample)
JP (1) JP2003204063A (enExample)
CN (1) CN1211864C (enExample)

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JP2013521650A (ja) 2010-03-05 2013-06-10 アプライド マテリアルズ インコーポレイテッド ラジカル成分ｃｖｄによる共形層
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
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US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
JP5875244B2 (ja) 2011-04-06 2016-03-02 キヤノン株式会社 電気機械変換装置及びその作製方法
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
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US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US9633838B2 (en) * 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
US11145739B2 (en) * 2016-03-04 2021-10-12 Intel Corporation Field effect transistors with a gated oxide semiconductor source/drain spacer
US10727131B2 (en) * 2017-06-16 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain epitaxy re-shaping

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Also Published As

Publication number Publication date
US20030127695A1 (en) 2003-07-10
US20050014354A1 (en) 2005-01-20
US7148158B2 (en) 2006-12-12
JP2003204063A (ja) 2003-07-18
CN1431715A (zh) 2003-07-23

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Granted publication date: 20050720

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