CN1209201C - 负压等离子体装置及负压等离子体清洗方法 - Google Patents

负压等离子体装置及负压等离子体清洗方法 Download PDF

Info

Publication number
CN1209201C
CN1209201C CNB021472416A CN02147241A CN1209201C CN 1209201 C CN1209201 C CN 1209201C CN B021472416 A CNB021472416 A CN B021472416A CN 02147241 A CN02147241 A CN 02147241A CN 1209201 C CN1209201 C CN 1209201C
Authority
CN
China
Prior art keywords
substrate
plasma
processing chamber
film substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021472416A
Other languages
English (en)
Chinese (zh)
Other versions
CN1411920A (zh
Inventor
笹冈达雄
铃木直树
小林研
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1411920A publication Critical patent/CN1411920A/zh
Application granted granted Critical
Publication of CN1209201C publication Critical patent/CN1209201C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013—Plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01059—Praseodymium [Pr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Wire Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNB021472416A 2001-10-18 2002-10-18 负压等离子体装置及负压等离子体清洗方法 Expired - Fee Related CN1209201C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-320472 2001-10-18
JP2001320472A JP4027072B2 (ja) 2001-10-18 2001-10-18 減圧プラズマ処理装置及びその方法
JP2001320472 2001-10-18

Publications (2)

Publication Number Publication Date
CN1411920A CN1411920A (zh) 2003-04-23
CN1209201C true CN1209201C (zh) 2005-07-06

Family

ID=19137859

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021472416A Expired - Fee Related CN1209201C (zh) 2001-10-18 2002-10-18 负压等离子体装置及负压等离子体清洗方法

Country Status (3)

Country Link
US (1) US6949144B2 (enExample)
JP (1) JP4027072B2 (enExample)
CN (1) CN1209201C (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4734231B2 (ja) * 2003-03-14 2011-07-27 アイクストロン・インコーポレーテッド 原子層堆積のサイクル時間改善のための方法と装置
JP4040037B2 (ja) * 2004-05-11 2008-01-30 ジャパン・フィールド株式会社 被洗浄物の洗浄方法及びその装置
JP4684703B2 (ja) * 2005-03-28 2011-05-18 富士機械製造株式会社 洗浄装置、液晶表示器の基板洗浄装置及び液晶表示器組付装置
DE102005016405A1 (de) * 2005-04-08 2006-10-12 Von Ardenne Anlagentechnik Gmbh Vorrichtung zur Vakuumbeschichtung von Substraten unterschiedlicher Größe
JP4884811B2 (ja) * 2006-03-20 2012-02-29 三菱重工業株式会社 ガラス基板の静電吸着装置及びその吸着離脱方法
JP4682946B2 (ja) * 2006-07-25 2011-05-11 パナソニック株式会社 プラズマ処理方法及び装置
TW200816880A (en) * 2006-05-30 2008-04-01 Matsushita Electric Industrial Co Ltd Atmospheric pressure plasma generating method, plasma processing method and component mounting method using same, and device using these methods
JP4682917B2 (ja) * 2006-05-30 2011-05-11 パナソニック株式会社 大気圧プラズマ発生方法及び装置
JP4670905B2 (ja) * 2007-06-18 2011-04-13 セイコーエプソン株式会社 接合方法、接合体、液滴吐出ヘッドおよび液滴吐出装置
JP5173699B2 (ja) * 2008-09-25 2013-04-03 株式会社日立ハイテクノロジーズ 有機ｅｌデバイス製造装置
CN101890414B (zh) * 2010-07-12 2012-01-11 中国电子科技集团公司第二研究所 在线等离子清洗机
JP5429124B2 (ja) * 2010-09-29 2014-02-26 パナソニック株式会社 プラズマ処理方法及び装置
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
CN102468118B (zh) * 2010-11-12 2015-04-22 北大方正集团有限公司 治具及清洗机
JP2012182384A (ja) * 2011-03-02 2012-09-20 Toshiba Corp テンプレート用の基板の処理装置及びテンプレート用の基板の処理方法
CN102820204A (zh) * 2011-06-07 2012-12-12 中国科学院微电子研究所 一种射频、介质阻挡常压辉光等离子体扫描去胶系统
JP6099007B2 (ja) * 2012-12-17 2017-03-22 パナソニックＩｐマネジメント株式会社 プラズマ発生装置およびプラズマ発生装置を用いた洗浄装置
CN105234130B (zh) * 2015-10-22 2017-10-27 苏州求是真空电子有限公司 适用于可扰曲材料的等离子清洗装置
DE102018120269A1 (de) 2018-08-21 2020-02-27 Relyon Plasma Gmbh Anordnung und Verfahren zur Behandlung von Objekten
CN110252739B (zh) * 2019-07-11 2020-11-24 东莞市科路科技有限公司 电极板及等离子清洗机
CN111354617B (zh) * 2020-03-13 2022-07-05 苏州市奥普斯等离子体科技有限公司 一种自动进出料等离子体处理装置及其使用方法
CN112553054A (zh) * 2020-12-10 2021-03-26 上海艾众生物科技有限公司 用于生物反应器的细胞分离设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5788868A (en) * 1995-09-04 1998-08-04 Dainippon Screen Mfg. Co., Ltd. Substrate transfer method and interface apparatus
US5882413A (en) * 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
US6350321B1 (en) * 1998-12-08 2002-02-26 International Business Machines Corporation UHV horizontal hot wall cluster CVD/growth design
KR100613674B1 (ko) * 1999-05-14 2006-08-21 동경 엘렉트론 주식회사 웨이퍼 처리 장치 및 처리 방법

Also Published As

Publication number Publication date
CN1411920A (zh) 2003-04-23
US6949144B2 (en) 2005-09-27
US20040084148A1 (en) 2004-05-06
JP4027072B2 (ja) 2007-12-26
JP2003124612A (ja) 2003-04-25

Similar Documents

Publication Publication Date Title
CN1209201C (zh) 负压等离子体装置及负压等离子体清洗方法
CN101473707B (zh) 电极结合方法和元件安装装置
CN1717796A (zh) 基板处理装置
CN1238769C (zh) 掩膜形成方法及去除方法、以及由该方法制造的半导体器件、电路、显示体模件、滤色器及发光元件
CN1491429A (zh) 被处理件的处理方法及处理装置
CN1438831A (zh) 等离子体处理方法及装置
JP2022167184A (ja) ウェハを保持体で保持するめっき処理装置
CN1630041A (zh) 处理装置部件的装配机构及其装配方法、锁定机构及其锁定方法
KR20130058596A (ko) 접합 장치, 접합 시스템, 접합 방법 및 컴퓨터 판독가능한 기억매체
CN1842242A (zh) 等离子体处理装置和等离子体处理方法
CN101047140A (zh) 基板传送装置、基板处理装置和基板处理方法
CN1698190A (zh) 接合方法和接合装置
JP4409134B2 (ja) 実装システム
CN114496694A (zh) 处理系统和输送方法
CN114843168A (zh) 收纳容器和处理系统
CN1717970A (zh) 基板输送装置、零件装配装置、以及零件装配的基板输送方法
JP6415391B2 (ja) 表面改質方法、プログラム、コンピュータ記憶媒体、表面改質装置及び接合システム
CN1808223A (zh) 制造层压基板的设备及方法
CN100352025C (zh) 接合装置
CN100450329C (zh) 膜基板处理装置和膜基板处理方法
CN1755526A (zh) 基板处理系统
TWI575600B (zh) 基板處理設備及基板處理方法
JP4440284B2 (ja) 減圧プラズマ処理装置及びその方法
JP4186495B2 (ja) 電子部品装着装置
CN113699494B (zh) 预处理腔室、半导体的预处理方法、加工设备及方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050706

Termination date: 20131018