JP4027072B2 - 減圧プラズマ処理装置及びその方法 - Google Patents

減圧プラズマ処理装置及びその方法 Download PDF

Info

Publication number
JP4027072B2
JP4027072B2 JP2001320472A JP2001320472A JP4027072B2 JP 4027072 B2 JP4027072 B2 JP 4027072B2 JP 2001320472 A JP2001320472 A JP 2001320472A JP 2001320472 A JP2001320472 A JP 2001320472A JP 4027072 B2 JP4027072 B2 JP 4027072B2
Authority
JP
Japan
Prior art keywords
chamber
substrate
plasma processing
film substrate
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001320472A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003124612A5 (enExample
JP2003124612A (ja
Inventor
達雄 笹岡
直樹 鈴木
研 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2001320472A priority Critical patent/JP4027072B2/ja
Priority to US10/270,680 priority patent/US6949144B2/en
Priority to CNB021472416A priority patent/CN1209201C/zh
Publication of JP2003124612A publication Critical patent/JP2003124612A/ja
Publication of JP2003124612A5 publication Critical patent/JP2003124612A5/ja
Application granted granted Critical
Publication of JP4027072B2 publication Critical patent/JP4027072B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013—Plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01059—Praseodymium [Pr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Wire Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2001320472A 2001-10-18 2001-10-18 減圧プラズマ処理装置及びその方法 Expired - Fee Related JP4027072B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001320472A JP4027072B2 (ja) 2001-10-18 2001-10-18 減圧プラズマ処理装置及びその方法
US10/270,680 US6949144B2 (en) 2001-10-18 2002-10-16 Low pressure plasma processing apparatus and method
CNB021472416A CN1209201C (zh) 2001-10-18 2002-10-18 负压等离子体装置及负压等离子体清洗方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001320472A JP4027072B2 (ja) 2001-10-18 2001-10-18 減圧プラズマ処理装置及びその方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007123072A Division JP4440284B2 (ja) 2007-05-08 2007-05-08 減圧プラズマ処理装置及びその方法

Publications (3)

Publication Number Publication Date
JP2003124612A JP2003124612A (ja) 2003-04-25
JP2003124612A5 JP2003124612A5 (enExample) 2005-06-30
JP4027072B2 true JP4027072B2 (ja) 2007-12-26

Family

ID=19137859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001320472A Expired - Fee Related JP4027072B2 (ja) 2001-10-18 2001-10-18 減圧プラズマ処理装置及びその方法

Country Status (3)

Country Link
US (1) US6949144B2 (enExample)
JP (1) JP4027072B2 (enExample)
CN (1) CN1209201C (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4734231B2 (ja) * 2003-03-14 2011-07-27 アイクストロン・インコーポレーテッド 原子層堆積のサイクル時間改善のための方法と装置
JP4040037B2 (ja) * 2004-05-11 2008-01-30 ジャパン・フィールド株式会社 被洗浄物の洗浄方法及びその装置
JP4684703B2 (ja) * 2005-03-28 2011-05-18 富士機械製造株式会社 洗浄装置、液晶表示器の基板洗浄装置及び液晶表示器組付装置
DE102005016405A1 (de) * 2005-04-08 2006-10-12 Von Ardenne Anlagentechnik Gmbh Vorrichtung zur Vakuumbeschichtung von Substraten unterschiedlicher Größe
JP4884811B2 (ja) * 2006-03-20 2012-02-29 三菱重工業株式会社 ガラス基板の静電吸着装置及びその吸着離脱方法
JP4682946B2 (ja) * 2006-07-25 2011-05-11 パナソニック株式会社 プラズマ処理方法及び装置
TW200816880A (en) * 2006-05-30 2008-04-01 Matsushita Electric Industrial Co Ltd Atmospheric pressure plasma generating method, plasma processing method and component mounting method using same, and device using these methods
JP4682917B2 (ja) * 2006-05-30 2011-05-11 パナソニック株式会社 大気圧プラズマ発生方法及び装置
JP4670905B2 (ja) * 2007-06-18 2011-04-13 セイコーエプソン株式会社 接合方法、接合体、液滴吐出ヘッドおよび液滴吐出装置
JP5173699B2 (ja) * 2008-09-25 2013-04-03 株式会社日立ハイテクノロジーズ 有機ｅｌデバイス製造装置
CN101890414B (zh) * 2010-07-12 2012-01-11 中国电子科技集团公司第二研究所 在线等离子清洗机
JP5429124B2 (ja) * 2010-09-29 2014-02-26 パナソニック株式会社 プラズマ処理方法及び装置
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
CN102468118B (zh) * 2010-11-12 2015-04-22 北大方正集团有限公司 治具及清洗机
JP2012182384A (ja) * 2011-03-02 2012-09-20 Toshiba Corp テンプレート用の基板の処理装置及びテンプレート用の基板の処理方法
CN102820204A (zh) * 2011-06-07 2012-12-12 中国科学院微电子研究所 一种射频、介质阻挡常压辉光等离子体扫描去胶系统
JP6099007B2 (ja) * 2012-12-17 2017-03-22 パナソニックＩｐマネジメント株式会社 プラズマ発生装置およびプラズマ発生装置を用いた洗浄装置
CN105234130B (zh) * 2015-10-22 2017-10-27 苏州求是真空电子有限公司 适用于可扰曲材料的等离子清洗装置
DE102018120269A1 (de) 2018-08-21 2020-02-27 Relyon Plasma Gmbh Anordnung und Verfahren zur Behandlung von Objekten
CN110252739B (zh) * 2019-07-11 2020-11-24 东莞市科路科技有限公司 电极板及等离子清洗机
CN111354617B (zh) * 2020-03-13 2022-07-05 苏州市奥普斯等离子体科技有限公司 一种自动进出料等离子体处理装置及其使用方法
CN112553054A (zh) * 2020-12-10 2021-03-26 上海艾众生物科技有限公司 用于生物反应器的细胞分离设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5788868A (en) * 1995-09-04 1998-08-04 Dainippon Screen Mfg. Co., Ltd. Substrate transfer method and interface apparatus
US5882413A (en) * 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
US6350321B1 (en) * 1998-12-08 2002-02-26 International Business Machines Corporation UHV horizontal hot wall cluster CVD/growth design
KR100613674B1 (ko) * 1999-05-14 2006-08-21 동경 엘렉트론 주식회사 웨이퍼 처리 장치 및 처리 방법

Also Published As

Publication number Publication date
CN1411920A (zh) 2003-04-23
US6949144B2 (en) 2005-09-27
US20040084148A1 (en) 2004-05-06
CN1209201C (zh) 2005-07-06
JP2003124612A (ja) 2003-04-25

Similar Documents

Publication Publication Date Title
JP4027072B2 (ja) 減圧プラズマ処理装置及びその方法
CN101473707B (zh) 电极结合方法和元件安装装置
KR102290822B1 (ko) 접합 시스템 및 접합 방법
JP2002208563A (ja) 被加工物の加工装置及び加工方法
JP2006181641A (ja) 接合装置及び接合方法
JP3948325B2 (ja) フィルム基板処理方法
JP4377035B2 (ja) 実装方法および装置
JP4344320B2 (ja) 接合装置
JP4440284B2 (ja) 減圧プラズマ処理装置及びその方法
WO2022181655A1 (ja) 接合方法、基板接合装置および基板接合システム
JP4186495B2 (ja) 電子部品装着装置
JPH0387386A (ja) 基板処理装置及び真空処理方法
CN115910893A (zh) 接合装置和接合方法
JP3462850B2 (ja) 半導体部品の製造方法及びプラズマ洗浄装置
WO2024089907A1 (ja) 基板処理装置、及び基板処理方法
KR102378330B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR102299883B1 (ko) 기판 처리 장치 및 방법
JP3970732B2 (ja) 接合方法および装置
JP4903948B2 (ja) 高清浄空間形成装置
JP3737897B2 (ja) プラズマ洗浄装置の基板搬送機構
JP7770495B2 (ja) 接合装置
TWI890986B (zh) 安裝裝置以及安裝方法
JP6067210B2 (ja) プラズマ処理装置
JP3479604B2 (ja) プラズマ洗浄装置およびその運転方法
CN120998805A (zh) 基板保持装置和接合系统

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041014

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041014

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060830

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060905

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061030

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070327

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070508

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070911

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071009

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101019

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111019

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121019

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131019

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees