CN120898539A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法

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Publication number
CN120898539A
CN120898539A CN202480021888.9A CN202480021888A CN120898539A CN 120898539 A CN120898539 A CN 120898539A CN 202480021888 A CN202480021888 A CN 202480021888A CN 120898539 A CN120898539 A CN 120898539A
Authority
CN
China
Prior art keywords
layer
insulating layer
electron supply
electron
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480021888.9A
Other languages
English (en)
Chinese (zh)
Inventor
神田裕介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN120898539A publication Critical patent/CN120898539A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN202480021888.9A 2023-03-30 2024-03-28 半导体装置及半导体装置的制造方法 Pending CN120898539A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202363493030P 2023-03-30 2023-03-30
US63/493,030 2023-03-30
PCT/JP2024/012641 WO2024204537A1 (ja) 2023-03-30 2024-03-28 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN120898539A true CN120898539A (zh) 2025-11-04

Family

ID=92906720

Family Applications (2)

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CN202480021888.9A Pending CN120898539A (zh) 2023-03-30 2024-03-28 半导体装置及半导体装置的制造方法
CN202480022422.0A Pending CN121014277A (zh) 2023-03-30 2024-03-28 半导体装置及半导体装置的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202480022422.0A Pending CN121014277A (zh) 2023-03-30 2024-03-28 半导体装置及半导体装置的制造方法

Country Status (5)

Country Link
US (2) US20260020309A1 (https=)
JP (2) JP7703809B2 (https=)
CN (2) CN120898539A (https=)
TW (1) TWI911695B (https=)
WO (2) WO2024204537A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211172A (ja) * 2007-01-31 2008-09-11 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2013055224A (ja) * 2011-09-05 2013-03-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2015011870A1 (ja) * 2013-07-25 2015-01-29 パナソニックＩｐマネジメント株式会社 半導体装置
JP2015090927A (ja) * 2013-11-06 2015-05-11 富士通株式会社 化合物半導体装置及びその製造方法
CN105789297A (zh) * 2015-01-14 2016-07-20 丰田自动车株式会社 半导体装置
JP2017022214A (ja) * 2015-07-08 2017-01-26 富士通株式会社 化合物半導体装置及びその製造方法
JP2019012783A (ja) * 2017-06-30 2019-01-24 富士通株式会社 化合物半導体装置及びその製造方法
JP2019096774A (ja) * 2017-11-24 2019-06-20 住友電気工業株式会社 窒化物半導体素子の製造方法
JPWO2021246227A1 (https=) * 2020-06-01 2021-12-09

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JP3727818B2 (ja) 1999-03-19 2005-12-21 株式会社東芝 半導体装置の配線構造及びその形成方法
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
JP4832722B2 (ja) * 2004-03-24 2011-12-07 日本碍子株式会社 半導体積層構造およびトランジスタ素子
JP2007048866A (ja) 2005-08-09 2007-02-22 Toshiba Corp 窒化物半導体素子
JP2008244454A (ja) * 2007-02-26 2008-10-09 Toshiba Corp 半導体レーザ装置
JP5347228B2 (ja) 2007-03-05 2013-11-20 日本電気株式会社 電界効果トランジスタ
JP2009111204A (ja) * 2007-10-31 2009-05-21 Panasonic Corp 電界効果トランジスタ及びその製造方法
JP2010098076A (ja) 2008-10-15 2010-04-30 Sumitomo Electric Device Innovations Inc 半導体装置の製造方法
JP5737948B2 (ja) * 2008-12-26 2015-06-17 ルネサスエレクトロニクス株式会社 ヘテロ接合電界効果トランジスタ、ヘテロ接合電界トランジスタの製造方法、および電子装置
JP2014029991A (ja) * 2012-06-29 2014-02-13 Sharp Corp 窒化物半導体装置の電極構造および窒化物半導体電界効果トランジスタ
JP6194769B2 (ja) * 2013-11-12 2017-09-13 富士通株式会社 半導体装置及び半導体装置の製造方法
JP2015226022A (ja) 2014-05-29 2015-12-14 キヤノン株式会社 半導体装置の製造方法
JP6642883B2 (ja) * 2015-10-08 2020-02-12 ローム株式会社 窒化物半導体装置およびその製造方法
JP7067336B2 (ja) * 2018-07-20 2022-05-16 住友電気工業株式会社 半導体装置の製造方法
JP7099255B2 (ja) * 2018-11-01 2022-07-12 富士通株式会社 化合物半導体装置、高周波増幅器及び電源装置
WO2023276972A1 (ja) * 2021-07-01 2023-01-05 ローム株式会社 窒化物半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211172A (ja) * 2007-01-31 2008-09-11 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2013055224A (ja) * 2011-09-05 2013-03-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2015011870A1 (ja) * 2013-07-25 2015-01-29 パナソニックＩｐマネジメント株式会社 半導体装置
JP2015090927A (ja) * 2013-11-06 2015-05-11 富士通株式会社 化合物半導体装置及びその製造方法
CN105789297A (zh) * 2015-01-14 2016-07-20 丰田自动车株式会社 半导体装置
JP2017022214A (ja) * 2015-07-08 2017-01-26 富士通株式会社 化合物半導体装置及びその製造方法
JP2019012783A (ja) * 2017-06-30 2019-01-24 富士通株式会社 化合物半導体装置及びその製造方法
JP2019096774A (ja) * 2017-11-24 2019-06-20 住友電気工業株式会社 窒化物半導体素子の製造方法
JPWO2021246227A1 (https=) * 2020-06-01 2021-12-09

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JP7703809B2 (ja) 2025-07-07
WO2024204537A1 (ja) 2024-10-03
US20260020309A1 (en) 2026-01-15
WO2024204536A1 (ja) 2024-10-03
TWI911695B (zh) 2026-01-11
US20260020300A1 (en) 2026-01-15
TW202443918A (zh) 2024-11-01
JPWO2024204537A1 (https=) 2024-10-03
CN121014277A (zh) 2025-11-25
JP7636644B1 (ja) 2025-02-26
TW202505778A (zh) 2025-02-01
JPWO2024204536A1 (https=) 2024-10-03

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