JP7703809B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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JP7703809B2
JP7703809B2 JP2025511144A JP2025511144A JP7703809B2 JP 7703809 B2 JP7703809 B2 JP 7703809B2 JP 2025511144 A JP2025511144 A JP 2025511144A JP 2025511144 A JP2025511144 A JP 2025511144A JP 7703809 B2 JP7703809 B2 JP 7703809B2
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layer
insulating layer
semiconductor device
electron
electron supply
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JPWO2024204536A5 (https=
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裕介 神田
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2025511144A 2023-03-30 2024-03-28 半導体装置および半導体装置の製造方法 Active JP7703809B2 (ja)

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US202363493030P 2023-03-30 2023-03-30
US63/493,030 2023-03-30
PCT/JP2024/012638 WO2024204536A1 (ja) 2023-03-30 2024-03-28 半導体装置および半導体装置の製造方法

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JPWO2024204536A1 JPWO2024204536A1 (https=) 2024-10-03
JPWO2024204536A5 JPWO2024204536A5 (https=) 2025-07-04
JP7703809B2 true JP7703809B2 (ja) 2025-07-07

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US (2) US20260020309A1 (https=)
JP (2) JP7703809B2 (https=)
CN (2) CN120898539A (https=)
TW (1) TWI911695B (https=)
WO (2) WO2024204537A1 (https=)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340569A (ja) 1999-03-19 2000-12-08 Toshiba Corp 半導体装置の配線構造及びその形成方法
JP2007048866A (ja) 2005-08-09 2007-02-22 Toshiba Corp 窒化物半導体素子
JP2008218696A (ja) 2007-03-05 2008-09-18 Nec Corp 電界効果トランジスタ
JP2008244454A (ja) 2007-02-26 2008-10-09 Toshiba Corp 半導体レーザ装置
JP2010098076A (ja) 2008-10-15 2010-04-30 Sumitomo Electric Device Innovations Inc 半導体装置の製造方法
JP2015226022A (ja) 2014-05-29 2015-12-14 キヤノン株式会社 半導体装置の製造方法
JP2017073499A (ja) 2015-10-08 2017-04-13 ローム株式会社 窒化物半導体装置およびその製造方法
JP2020013964A (ja) 2018-07-20 2020-01-23 住友電気工業株式会社 半導体装置の製造方法
JP2020072218A (ja) 2018-11-01 2020-05-07 富士通株式会社 化合物半導体装置、高周波増幅器及び電源装置
WO2023276972A1 (ja) 2021-07-01 2023-01-05 ローム株式会社 窒化物半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
JP4832722B2 (ja) * 2004-03-24 2011-12-07 日本碍子株式会社 半導体積層構造およびトランジスタ素子
JP2008211172A (ja) * 2007-01-31 2008-09-11 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2009111204A (ja) * 2007-10-31 2009-05-21 Panasonic Corp 電界効果トランジスタ及びその製造方法
JP5737948B2 (ja) * 2008-12-26 2015-06-17 ルネサスエレクトロニクス株式会社 ヘテロ接合電界効果トランジスタ、ヘテロ接合電界トランジスタの製造方法、および電子装置
JP2013055224A (ja) * 2011-09-05 2013-03-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2014029991A (ja) * 2012-06-29 2014-02-13 Sharp Corp 窒化物半導体装置の電極構造および窒化物半導体電界効果トランジスタ
WO2015011870A1 (ja) * 2013-07-25 2015-01-29 パナソニックＩｐマネジメント株式会社 半導体装置
JP6187167B2 (ja) * 2013-11-06 2017-08-30 富士通株式会社 化合物半導体装置及びその製造方法
JP6194769B2 (ja) * 2013-11-12 2017-09-13 富士通株式会社 半導体装置及び半導体装置の製造方法
JP6023825B2 (ja) * 2015-01-14 2016-11-09 株式会社豊田中央研究所 半導体装置
JP6631057B2 (ja) * 2015-07-08 2020-01-15 富士通株式会社 化合物半導体装置及びその製造方法
JP6880406B2 (ja) * 2017-06-30 2021-06-02 富士通株式会社 化合物半導体装置及びその製造方法
JP6879177B2 (ja) * 2017-11-24 2021-06-02 住友電気工業株式会社 窒化物半導体素子の製造方法
WO2021246227A1 (ja) * 2020-06-01 2021-12-09 ヌヴォトンテクノロジージャパン株式会社 半導体装置および半導体装置の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340569A (ja) 1999-03-19 2000-12-08 Toshiba Corp 半導体装置の配線構造及びその形成方法
JP2007048866A (ja) 2005-08-09 2007-02-22 Toshiba Corp 窒化物半導体素子
JP2008244454A (ja) 2007-02-26 2008-10-09 Toshiba Corp 半導体レーザ装置
JP2008218696A (ja) 2007-03-05 2008-09-18 Nec Corp 電界効果トランジスタ
JP2010098076A (ja) 2008-10-15 2010-04-30 Sumitomo Electric Device Innovations Inc 半導体装置の製造方法
JP2015226022A (ja) 2014-05-29 2015-12-14 キヤノン株式会社 半導体装置の製造方法
JP2017073499A (ja) 2015-10-08 2017-04-13 ローム株式会社 窒化物半導体装置およびその製造方法
JP2020013964A (ja) 2018-07-20 2020-01-23 住友電気工業株式会社 半導体装置の製造方法
JP2020072218A (ja) 2018-11-01 2020-05-07 富士通株式会社 化合物半導体装置、高周波増幅器及び電源装置
WO2023276972A1 (ja) 2021-07-01 2023-01-05 ローム株式会社 窒化物半導体装置

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WO2024204537A1 (ja) 2024-10-03
US20260020309A1 (en) 2026-01-15
WO2024204536A1 (ja) 2024-10-03
TWI911695B (zh) 2026-01-11
US20260020300A1 (en) 2026-01-15
TW202443918A (zh) 2024-11-01
JPWO2024204537A1 (https=) 2024-10-03
CN121014277A (zh) 2025-11-25
JP7636644B1 (ja) 2025-02-26
CN120898539A (zh) 2025-11-04
TW202505778A (zh) 2025-02-01
JPWO2024204536A1 (https=) 2024-10-03

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