JPWO2021246227A1 - - Google Patents

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Publication number
JPWO2021246227A1
JPWO2021246227A1 JP2021572061A JP2021572061A JPWO2021246227A1 JP WO2021246227 A1 JPWO2021246227 A1 JP WO2021246227A1 JP 2021572061 A JP2021572061 A JP 2021572061A JP 2021572061 A JP2021572061 A JP 2021572061A JP WO2021246227 A1 JPWO2021246227 A1 JP WO2021246227A1
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JP
Japan
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JP2021572061A
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Japanese (ja)
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JP7057473B1 (ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2021572061A 2020-06-01 2021-05-24 半導体装置および半導体装置の製造方法 Active JP7057473B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020095432 2020-06-01
JP2020095432 2020-06-01
PCT/JP2021/019635 WO2021246227A1 (ja) 2020-06-01 2021-05-24 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021246227A1 true JPWO2021246227A1 (https=) 2021-12-09
JP7057473B1 JP7057473B1 (ja) 2022-04-19

Family

ID=78830977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021572061A Active JP7057473B1 (ja) 2020-06-01 2021-05-24 半導体装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US11876120B2 (https=)
EP (1) EP4016586B1 (https=)
JP (1) JP7057473B1 (https=)
CN (1) CN114521293B (https=)
WO (1) WO2021246227A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120898539A (zh) * 2023-03-30 2025-11-04 新唐科技日本株式会社 半导体装置及半导体装置的制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117716496B (zh) * 2021-08-03 2024-11-05 新唐科技日本株式会社 可变电容元件
JP7821387B2 (ja) * 2023-03-29 2026-02-27 豊田合成株式会社 半導体素子およびその製造方法
US20250351534A1 (en) * 2024-05-13 2025-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor device with gas-blocking layers

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045898A (ja) * 2001-08-01 2003-02-14 Sony Corp 半導体装置およびその製造方法
JP2006120694A (ja) * 2004-10-19 2006-05-11 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP4333652B2 (ja) 2005-08-17 2009-09-16 沖電気工業株式会社 オーミック電極、オーミック電極の製造方法、電界効果型トランジスタ、電界効果型トランジスタの製造方法、および、半導体装置
JP2007080855A (ja) * 2005-09-09 2007-03-29 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ
JP2007158149A (ja) * 2005-12-07 2007-06-21 Sharp Corp 半導体装置
US20100207164A1 (en) * 2008-08-22 2010-08-19 Daisuke Shibata Field effect transistor
JP5625314B2 (ja) 2009-10-22 2014-11-19 サンケン電気株式会社 半導体装置
JP5590874B2 (ja) 2009-12-18 2014-09-17 パナソニック株式会社 窒化物半導体素子
JP2011171640A (ja) 2010-02-22 2011-09-01 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
JP2011210751A (ja) * 2010-03-26 2011-10-20 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子の製造方法、および電子装置
JP2012054471A (ja) * 2010-09-02 2012-03-15 Fujitsu Ltd 半導体装置及びその製造方法、電源装置
JP5596495B2 (ja) 2010-10-29 2014-09-24 パナソニック株式会社 半導体装置
CN103582938A (zh) * 2011-06-03 2014-02-12 住友电气工业株式会社 氮化物电子器件、氮化物电子器件的制作方法
JP5942204B2 (ja) * 2011-07-01 2016-06-29 パナソニックＩｐマネジメント株式会社 半導体装置
WO2013153927A1 (ja) * 2012-04-11 2013-10-17 シャープ株式会社 窒化物半導体装置
JP2014029991A (ja) * 2012-06-29 2014-02-13 Sharp Corp 窒化物半導体装置の電極構造および窒化物半導体電界効果トランジスタ
WO2014050054A1 (ja) 2012-09-28 2014-04-03 パナソニック株式会社 半導体装置
CN105074876A (zh) * 2013-03-19 2015-11-18 夏普株式会社 氮化物半导体器件和氮化物半导体器件的制造方法
JP6575304B2 (ja) * 2015-10-30 2019-09-18 富士通株式会社 半導体装置、電源装置、増幅器及び半導体装置の製造方法
JP2019192698A (ja) * 2018-04-19 2019-10-31 富士通株式会社 半導体装置、半導体装置の製造方法及び増幅器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120898539A (zh) * 2023-03-30 2025-11-04 新唐科技日本株式会社 半导体装置及半导体装置的制造方法

Also Published As

Publication number Publication date
JP7057473B1 (ja) 2022-04-19
WO2021246227A1 (ja) 2021-12-09
EP4016586A1 (en) 2022-06-22
US20220262917A1 (en) 2022-08-18
CN114521293A (zh) 2022-05-20
EP4016586B1 (en) 2025-07-30
CN114521293B (zh) 2023-04-28
EP4016586A4 (en) 2022-10-12
US11876120B2 (en) 2024-01-16

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