JP7057473B1 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

Info

Publication number
JP7057473B1
JP7057473B1 JP2021572061A JP2021572061A JP7057473B1 JP 7057473 B1 JP7057473 B1 JP 7057473B1 JP 2021572061 A JP2021572061 A JP 2021572061A JP 2021572061 A JP2021572061 A JP 2021572061A JP 7057473 B1 JP7057473 B1 JP 7057473B1
Authority
JP
Japan
Prior art keywords
inclined surface
layer
barrier layer
semiconductor device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021572061A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021246227A1 (https=
Inventor
裕介 神田
賢一 宮島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of JPWO2021246227A1 publication Critical patent/JPWO2021246227A1/ja
Application granted granted Critical
Publication of JP7057473B1 publication Critical patent/JP7057473B1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2021572061A 2020-06-01 2021-05-24 半導体装置および半導体装置の製造方法 Active JP7057473B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020095432 2020-06-01
JP2020095432 2020-06-01
PCT/JP2021/019635 WO2021246227A1 (ja) 2020-06-01 2021-05-24 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021246227A1 JPWO2021246227A1 (https=) 2021-12-09
JP7057473B1 true JP7057473B1 (ja) 2022-04-19

Family

ID=78830977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021572061A Active JP7057473B1 (ja) 2020-06-01 2021-05-24 半導体装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US11876120B2 (https=)
EP (1) EP4016586B1 (https=)
JP (1) JP7057473B1 (https=)
CN (1) CN114521293B (https=)
WO (1) WO2021246227A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117716496B (zh) * 2021-08-03 2024-11-05 新唐科技日本株式会社 可变电容元件
JP7821387B2 (ja) * 2023-03-29 2026-02-27 豊田合成株式会社 半導体素子およびその製造方法
JP7703809B2 (ja) * 2023-03-30 2025-07-07 ヌヴォトンテクノロジージャパン株式会社 半導体装置および半導体装置の製造方法
US20250351534A1 (en) * 2024-05-13 2025-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor device with gas-blocking layers

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120694A (ja) * 2004-10-19 2006-05-11 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007158149A (ja) * 2005-12-07 2007-06-21 Sharp Corp 半導体装置
WO2010021099A1 (ja) * 2008-08-22 2010-02-25 パナソニック株式会社 電界効果トランジスタ
JP2011091200A (ja) * 2009-10-22 2011-05-06 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2011129769A (ja) * 2009-12-18 2011-06-30 Panasonic Corp 窒化物半導体素子および窒化物半導体素子の製造方法
JP2011171640A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
JP2012099542A (ja) * 2010-10-29 2012-05-24 Panasonic Corp 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045898A (ja) * 2001-08-01 2003-02-14 Sony Corp 半導体装置およびその製造方法
JP4333652B2 (ja) 2005-08-17 2009-09-16 沖電気工業株式会社 オーミック電極、オーミック電極の製造方法、電界効果型トランジスタ、電界効果型トランジスタの製造方法、および、半導体装置
JP2007080855A (ja) * 2005-09-09 2007-03-29 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ
JP2011210751A (ja) * 2010-03-26 2011-10-20 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子の製造方法、および電子装置
JP2012054471A (ja) * 2010-09-02 2012-03-15 Fujitsu Ltd 半導体装置及びその製造方法、電源装置
CN103582938A (zh) * 2011-06-03 2014-02-12 住友电气工业株式会社 氮化物电子器件、氮化物电子器件的制作方法
JP5942204B2 (ja) * 2011-07-01 2016-06-29 パナソニックＩｐマネジメント株式会社 半導体装置
WO2013153927A1 (ja) * 2012-04-11 2013-10-17 シャープ株式会社 窒化物半導体装置
JP2014029991A (ja) * 2012-06-29 2014-02-13 Sharp Corp 窒化物半導体装置の電極構造および窒化物半導体電界効果トランジスタ
WO2014050054A1 (ja) 2012-09-28 2014-04-03 パナソニック株式会社 半導体装置
CN105074876A (zh) * 2013-03-19 2015-11-18 夏普株式会社 氮化物半导体器件和氮化物半导体器件的制造方法
JP6575304B2 (ja) * 2015-10-30 2019-09-18 富士通株式会社 半導体装置、電源装置、増幅器及び半導体装置の製造方法
JP2019192698A (ja) * 2018-04-19 2019-10-31 富士通株式会社 半導体装置、半導体装置の製造方法及び増幅器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120694A (ja) * 2004-10-19 2006-05-11 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007158149A (ja) * 2005-12-07 2007-06-21 Sharp Corp 半導体装置
WO2010021099A1 (ja) * 2008-08-22 2010-02-25 パナソニック株式会社 電界効果トランジスタ
JP2011091200A (ja) * 2009-10-22 2011-05-06 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2011129769A (ja) * 2009-12-18 2011-06-30 Panasonic Corp 窒化物半導体素子および窒化物半導体素子の製造方法
JP2011171640A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
JP2012099542A (ja) * 2010-10-29 2012-05-24 Panasonic Corp 半導体装置

Also Published As

Publication number Publication date
WO2021246227A1 (ja) 2021-12-09
EP4016586A1 (en) 2022-06-22
US20220262917A1 (en) 2022-08-18
CN114521293A (zh) 2022-05-20
EP4016586B1 (en) 2025-07-30
CN114521293B (zh) 2023-04-28
EP4016586A4 (en) 2022-10-12
US11876120B2 (en) 2024-01-16
JPWO2021246227A1 (https=) 2021-12-09

Similar Documents

Publication Publication Date Title
JP7057473B1 (ja) 半導体装置および半導体装置の製造方法
CN101211969B (zh) 高速大功率氮化物半导体器件及其制造方法
CN104009074B (zh) 高电子迁移率晶体管及其制造方法
JP5653607B2 (ja) ＧａＮ系電界効果トランジスタおよびその製造方法
JP5323527B2 (ja) ＧａＮ系電界効果トランジスタの製造方法
US20060220060A1 (en) Semiconductor device and manufacturing method thereof
JP5529595B2 (ja) 半導体装置及びその製造方法
JP5566670B2 (ja) ＧａＮ系電界効果トランジスタ
US10707322B2 (en) Semiconductor devices and methods for fabricating the same
CN116490979B (zh) 半导体结构及其制作方法
JP7002015B2 (ja) 半導体装置およびその製造方法
CN112531025A (zh) 高电子迁移率晶体管
TW202025258A (zh) 氮化鎵高電子移動率電晶體的閘極結構的製造方法
TWI676293B (zh) 半導體裝置及其製造方法
CN112652659A (zh) 高电子迁移率晶体管及其制作方法
CN116487260A (zh) 高电子迁移率晶体管及其制作方法
CN113628962A (zh) Ⅲ族氮化物增强型hemt器件及其制造方法
TWI673868B (zh) 半導體裝置及其製造方法
CN116153993A (zh) 半导体结构及其形成方法
JP7578862B2 (ja) 半導体装置
JP2010165783A (ja) 電界効果型トランジスタおよびその製造方法
CN117199124A (zh) 功率器件外延结构及其制备方法、功率器件
TW202010125A (zh) 半導體裝置及其製造方法
CN111092118B (zh) 半导体装置及其制造方法
KR102864676B1 (ko) 이종접합 전계효과 트랜지스터 및 그 제조 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211203

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211203

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20211203

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220322

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220407

R150 Certificate of patent or registration of utility model

Ref document number: 7057473

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250