CN1205655C - 后化学-机械平面化(cmp)清洗组合物 - Google Patents

后化学-机械平面化(cmp)清洗组合物 Download PDF

Info

Publication number
CN1205655C
CN1205655C CNB018107230A CN01810723A CN1205655C CN 1205655 C CN1205655 C CN 1205655C CN B018107230 A CNB018107230 A CN B018107230A CN 01810723 A CN01810723 A CN 01810723A CN 1205655 C CN1205655 C CN 1205655C
Authority
CN
China
Prior art keywords
solution
cleaning
ascorbic acid
cleaning solution
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB018107230A
Other languages
English (en)
Chinese (zh)
Other versions
CN1433567A (zh
Inventor
沙利亚·内格西尼
杰夫·巴恩斯
徐定颖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
ESC Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ESC Inc filed Critical ESC Inc
Publication of CN1433567A publication Critical patent/CN1433567A/zh
Application granted granted Critical
Publication of CN1205655C publication Critical patent/CN1205655C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38Cationic compounds
    • C11D1/62Quaternary ammonium compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005Other compounding ingredients characterised by their effect
    • C11D3/0073Anticorrosion compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/28Heterocyclic compounds containing nitrogen in the ring
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/30Amines; Substituted amines ; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/265Carboxylic acids or salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3218Alkanolamines or alkanolimines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3245Aminoacids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3254Esters or carbonates thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CNB018107230A 2000-06-06 2001-06-06 后化学-机械平面化(cmp)清洗组合物 Expired - Lifetime CN1205655C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/587,883 2000-06-06
US09/587,883 US6492308B1 (en) 1999-11-16 2000-06-06 Post chemical-mechanical planarization (CMP) cleaning composition
PCT/US2001/018402 WO2001095381A2 (en) 2000-06-06 2001-06-06 Post chemical-mechanical planarization (cmp) cleaning composition

Publications (2)

Publication Number Publication Date
CN1433567A CN1433567A (zh) 2003-07-30
CN1205655C true CN1205655C (zh) 2005-06-08

Family

ID=24351570

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018107230A Expired - Lifetime CN1205655C (zh) 2000-06-06 2001-06-06 后化学-机械平面化(cmp)清洗组合物

Country Status (9)

Country Link
US (1) US6492308B1 (enExample)
EP (1) EP1287550B1 (enExample)
JP (1) JP4942275B2 (enExample)
KR (2) KR100831180B1 (enExample)
CN (1) CN1205655C (enExample)
AT (1) ATE462198T1 (enExample)
DE (1) DE60141629D1 (enExample)
TW (1) TW574369B (enExample)
WO (1) WO2001095381A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI551681B (zh) * 2014-07-18 2016-10-01 卡博特微電子公司 於cmp後使用之清潔組合物及其相關方法

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
EP1310989B1 (en) * 2000-06-16 2005-12-14 Kao Corporation Detergent composition
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US6653265B2 (en) * 2001-06-20 2003-11-25 Cornell Research Foundation, Inc. Removable marking system
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
US20030138737A1 (en) 2001-12-27 2003-07-24 Kazumasa Wakiya Photoresist stripping solution and a method of stripping photoresists using the same
KR100913557B1 (ko) * 2002-01-28 2009-08-21 미쓰비시 가가꾸 가부시키가이샤 반도체 디바이스용 기판의 세정액 및 세정방법
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7306663B2 (en) * 2003-08-05 2007-12-11 Halox, Division Of Hammond Group, Inc. Corrosion inhibitor
JP2005075924A (ja) * 2003-08-29 2005-03-24 Neos Co Ltd シリカスケール除去剤
WO2005066325A2 (en) * 2003-12-31 2005-07-21 Ekc Technology, Inc. Cleaner compositions containing free radical quenchers
US20070251154A1 (en) * 2004-02-04 2007-11-01 Lombardi John L Lapping Composition and Method Using Same
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
US7498295B2 (en) * 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US7253111B2 (en) 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
CN1300377C (zh) * 2004-11-25 2007-02-14 长沙艾森设备维护技术有限公司 飞机清洗剂
US20060148666A1 (en) * 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7427362B2 (en) 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
TWI393178B (zh) * 2005-01-27 2013-04-11 Advanced Tech Materials 半導體基板處理用之組成物
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7476620B2 (en) * 2005-03-25 2009-01-13 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
ITTN20050005A1 (it) * 2005-04-05 2006-10-06 Antonio Arcelli Procedimento chimico per la riduzione di vapori tossici ed irritanti causati da ammoniaca dall'utilizzo di creme coloranti o decoloranti i capelli.
KR101164959B1 (ko) * 2005-04-06 2012-07-12 주식회사 동진쎄미켐 반도체 소자용 포토레지스트를 제거하기 위한 박리액 조성물
CN100348709C (zh) * 2005-05-20 2007-11-14 长兴开发科技股份有限公司 用于半导体铜制程的水相清洗组合物
JP2008543060A (ja) * 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
EP2687589A3 (en) * 2005-05-26 2014-05-07 Advanced Technology Materials, Inc. Copper passivating post-chemical mechanical polishing cleaning composition and method of use
KR101477455B1 (ko) * 2005-06-07 2014-12-29 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 및 유전체 상용성 희생 반사 방지 코팅 세정 및 제거 조성물
JP2008547202A (ja) * 2005-06-13 2008-12-25 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US7374621B2 (en) * 2006-02-09 2008-05-20 Hitachi Global Storage Technologies Netherlands Bv System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2008039730A1 (en) * 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
KR100792358B1 (ko) 2006-09-29 2008-01-09 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
US7851655B2 (en) * 2006-12-19 2010-12-14 Nalco Company Functionalized amine-based corrosion inhibitors for galvanized metal surfaces and method of using same
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
KR101561708B1 (ko) * 2007-05-17 2015-10-19 인티그리스, 인코포레이티드 Cmp후 세정 제제용 신규한 항산화제
TWI437093B (zh) * 2007-08-03 2014-05-11 Epoch Material Co Ltd 半導體銅製程用水相清洗組合物
CN101226346B (zh) * 2007-12-27 2010-06-09 周伟 光致抗蚀剂的脱膜工艺及在该工艺中使用的第一组合物、第二组合物和脱膜剂水溶液
WO2010048139A2 (en) 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
KR101132303B1 (ko) * 2009-02-16 2012-04-05 주식회사 하이닉스반도체 반도체 소자의 구리배선 형성방법
WO2011000758A1 (en) 2009-06-30 2011-01-06 Basf Se Aqueous alkaline cleaning compositions and methods of their use
ES2711924T3 (es) 2010-01-25 2019-05-08 Westinghouse Electric Co Llc Procedimiento y composición para eliminar depósitos de cal formados en una superficie metálica dentro de un sistema generador de vapor
WO2011094568A2 (en) 2010-01-29 2011-08-04 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
CN103003405B (zh) 2010-07-19 2016-04-13 巴斯夫欧洲公司 含水碱性清洁组合物及其应用方法
TWI465556B (zh) * 2010-09-14 2014-12-21 Everlight Chem Ind Corp 用於粗拋晶圓之研磨組成物
US9831088B2 (en) 2010-10-06 2017-11-28 Entegris, Inc. Composition and process for selectively etching metal nitrides
KR102064487B1 (ko) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. 세륨-함유 용액에 의해 발생된 입자의 제거를 위한 배합물
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅または銅合金用エッチング液
KR102105381B1 (ko) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
JP6123335B2 (ja) 2012-02-17 2017-05-10 三菱化学株式会社 半導体デバイス用洗浄液及び半導体デバイス用基板の洗浄方法
KR20140139565A (ko) * 2012-03-18 2014-12-05 인티그리스, 인코포레이티드 개선된 장벽층 상용성 및 세정 성능을 가진 cmp-후 배합물
EP2850495A4 (en) 2012-05-18 2016-01-20 Entegris Inc COMPOSITION AND METHOD FOR REMOVING PHOTOLACK FROM A SURFACE WITH TITANNITRIDE
JP6259396B2 (ja) * 2012-07-24 2018-01-10 三井金属鉱業株式会社 電極箔及び有機発光デバイス
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
KR102237745B1 (ko) 2013-03-15 2021-04-09 캐보트 마이크로일렉트로닉스 코포레이션 구리 화학 기계적 평탄화 후 수성 세정 조성물
US20140308814A1 (en) * 2013-04-15 2014-10-16 Applied Materials, Inc Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
KR101420571B1 (ko) * 2013-07-05 2014-07-16 주식회사 동진쎄미켐 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (zh) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 移除離子植入抗蝕劑之非氧化強酸類之用途
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
KR102183400B1 (ko) * 2015-06-23 2020-11-26 주식회사 이엔에프테크놀로지 세정액 조성물
US10832917B2 (en) * 2017-06-09 2020-11-10 International Business Machines Corporation Low oxygen cleaning for CMP equipment
KR102230869B1 (ko) 2017-09-14 2021-03-23 주식회사 이엔에프테크놀로지 세정액 조성물
KR102242969B1 (ko) 2018-03-06 2021-04-22 주식회사 이엔에프테크놀로지 반도체 기판용 세정액 조성물
CN112602175B (zh) 2018-08-30 2025-03-11 三菱化学株式会社 清洗液、清洗方法和半导体晶片的制造方法
JP7192461B2 (ja) * 2018-12-11 2022-12-20 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
KR20240002608A (ko) 2022-06-29 2024-01-05 삼성전자주식회사 기판 세정 장비

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994008276A1 (en) 1992-09-28 1994-04-14 Ducoa L.P. Photoresist stripping process using n,n-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide
DE4317792A1 (de) * 1993-05-28 1994-12-01 Herberts Gmbh Emulgatorfreies Überzugsmittel, dessen Herstellung und Verwendung
JP3302120B2 (ja) 1993-07-08 2002-07-15 関東化学株式会社 レジスト用剥離液
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
TW274630B (enExample) * 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5567574A (en) 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5989353A (en) * 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US6060439A (en) * 1997-09-29 2000-05-09 Kyzen Corporation Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
ATE436043T1 (de) * 1998-05-18 2009-07-15 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
US6152148A (en) * 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
JP4138096B2 (ja) * 1998-09-09 2008-08-20 花王株式会社 剥離剤組成物
JP4224651B2 (ja) 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6475966B1 (en) 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI551681B (zh) * 2014-07-18 2016-10-01 卡博特微電子公司 於cmp後使用之清潔組合物及其相關方法

Also Published As

Publication number Publication date
WO2001095381A2 (en) 2001-12-13
EP1287550B1 (en) 2010-03-24
DE60141629D1 (de) 2010-05-06
JP2003536258A (ja) 2003-12-02
KR100831182B1 (ko) 2008-05-22
KR20070114326A (ko) 2007-11-30
WO2001095381A3 (en) 2002-05-23
KR20030025238A (ko) 2003-03-28
EP1287550A2 (en) 2003-03-05
JP4942275B2 (ja) 2012-05-30
KR100831180B1 (ko) 2008-05-21
ATE462198T1 (de) 2010-04-15
TW574369B (en) 2004-02-01
US6492308B1 (en) 2002-12-10
CN1433567A (zh) 2003-07-30

Similar Documents

Publication Publication Date Title
CN1205655C (zh) 后化学-机械平面化(cmp)清洗组合物
JP5097640B2 (ja) 化学機械平坦化(cmp)後の洗浄組成物
US7365045B2 (en) Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
US6194366B1 (en) Post chemical-mechanical planarization (CMP) cleaning composition
TWI507521B (zh) 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法
KR100561178B1 (ko) 반도체 장치용의 유기 및 플라즈마 에칭된 잔사의 세척조성물
TWI460268B (zh) Semiconductor substrate cleaning solution composition
CN101681824B (zh) 半导体器件用基板清洗液以及半导体器件用基板的制造方法
JP4304988B2 (ja) 半導体デバイス用基板の洗浄方法
WO2003065433A1 (fr) Detergent liquide pour substrat de dispositif semi-conducteur et procede de nettoyage
US20060148666A1 (en) Aqueous cleaner with low metal etch rate
EP2812422B1 (en) A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol
CN101233221A (zh) 铜钝化的化学机械抛光后清洗组合物及使用方法
CN101410503A (zh) 用于后cmp清洗工艺的改良碱性溶液

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: XIAN JIN TECHNOLOGY MATERIALS CO., LTD.

Free format text: FORMER OWNER: ESC INC.

Effective date: 20080104

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20080104

Address after: American Connecticut

Patentee after: Advanced Technology Materials, Inc.

Address before: American Pennsylvania

Patentee before: ESC Inc.

ASS Succession or assignment of patent right

Owner name: ENTERGRIS CO.

Free format text: FORMER OWNER: ADVANCED TECH MATERIALS

Effective date: 20150330

TR01 Transfer of patent right

Effective date of registration: 20150330

Address after: Massachusetts, USA

Patentee after: Entergris Co.

Address before: American Connecticut

Patentee before: Advanced Technology Materials, Inc.

CX01 Expiry of patent term

Granted publication date: 20050608

CX01 Expiry of patent term