CN1205655C - 后化学-机械平面化(cmp)清洗组合物 - Google Patents
后化学-机械平面化(cmp)清洗组合物 Download PDFInfo
- Publication number
- CN1205655C CN1205655C CNB018107230A CN01810723A CN1205655C CN 1205655 C CN1205655 C CN 1205655C CN B018107230 A CNB018107230 A CN B018107230A CN 01810723 A CN01810723 A CN 01810723A CN 1205655 C CN1205655 C CN 1205655C
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- China
- Prior art keywords
- solution
- cleaning
- ascorbic acid
- cleaning solution
- water
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3254—Esters or carbonates thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/587,883 | 2000-06-06 | ||
| US09/587,883 US6492308B1 (en) | 1999-11-16 | 2000-06-06 | Post chemical-mechanical planarization (CMP) cleaning composition |
| PCT/US2001/018402 WO2001095381A2 (en) | 2000-06-06 | 2001-06-06 | Post chemical-mechanical planarization (cmp) cleaning composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1433567A CN1433567A (zh) | 2003-07-30 |
| CN1205655C true CN1205655C (zh) | 2005-06-08 |
Family
ID=24351570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB018107230A Expired - Lifetime CN1205655C (zh) | 2000-06-06 | 2001-06-06 | 后化学-机械平面化(cmp)清洗组合物 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6492308B1 (enExample) |
| EP (1) | EP1287550B1 (enExample) |
| JP (1) | JP4942275B2 (enExample) |
| KR (2) | KR100831180B1 (enExample) |
| CN (1) | CN1205655C (enExample) |
| AT (1) | ATE462198T1 (enExample) |
| DE (1) | DE60141629D1 (enExample) |
| TW (1) | TW574369B (enExample) |
| WO (1) | WO2001095381A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI551681B (zh) * | 2014-07-18 | 2016-10-01 | 卡博特微電子公司 | 於cmp後使用之清潔組合物及其相關方法 |
Families Citing this family (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6723691B2 (en) * | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| EP1310989B1 (en) * | 2000-06-16 | 2005-12-14 | Kao Corporation | Detergent composition |
| US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
| US6653265B2 (en) * | 2001-06-20 | 2003-11-25 | Cornell Research Foundation, Inc. | Removable marking system |
| US20030119692A1 (en) * | 2001-12-07 | 2003-06-26 | So Joseph K. | Copper polishing cleaning solution |
| US20030138737A1 (en) | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
| KR100913557B1 (ko) * | 2002-01-28 | 2009-08-21 | 미쓰비시 가가꾸 가부시키가이샤 | 반도체 디바이스용 기판의 세정액 및 세정방법 |
| US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| TWI264620B (en) * | 2003-03-07 | 2006-10-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7306663B2 (en) * | 2003-08-05 | 2007-12-11 | Halox, Division Of Hammond Group, Inc. | Corrosion inhibitor |
| JP2005075924A (ja) * | 2003-08-29 | 2005-03-24 | Neos Co Ltd | シリカスケール除去剤 |
| WO2005066325A2 (en) * | 2003-12-31 | 2005-07-21 | Ekc Technology, Inc. | Cleaner compositions containing free radical quenchers |
| US20070251154A1 (en) * | 2004-02-04 | 2007-11-01 | Lombardi John L | Lapping Composition and Method Using Same |
| KR100795364B1 (ko) * | 2004-02-10 | 2008-01-17 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법 |
| US7498295B2 (en) * | 2004-02-12 | 2009-03-03 | Air Liquide Electronics U.S. Lp | Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide |
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| US7087564B2 (en) * | 2004-03-05 | 2006-08-08 | Air Liquide America, L.P. | Acidic chemistry for post-CMP cleaning |
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| KR20050110470A (ko) * | 2004-05-19 | 2005-11-23 | 테크노세미켐 주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법 |
| CN1300377C (zh) * | 2004-11-25 | 2007-02-14 | 长沙艾森设备维护技术有限公司 | 飞机清洗剂 |
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| TWI393178B (zh) * | 2005-01-27 | 2013-04-11 | Advanced Tech Materials | 半導體基板處理用之組成物 |
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| JP2008547202A (ja) * | 2005-06-13 | 2008-12-25 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法 |
| TW200734448A (en) * | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
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| KR20140139565A (ko) * | 2012-03-18 | 2014-12-05 | 인티그리스, 인코포레이티드 | 개선된 장벽층 상용성 및 세정 성능을 가진 cmp-후 배합물 |
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| JP6259396B2 (ja) * | 2012-07-24 | 2018-01-10 | 三井金属鉱業株式会社 | 電極箔及び有機発光デバイス |
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-
2000
- 2000-06-06 US US09/587,883 patent/US6492308B1/en not_active Expired - Lifetime
-
2001
- 2001-06-06 WO PCT/US2001/018402 patent/WO2001095381A2/en not_active Ceased
- 2001-06-06 EP EP01942043A patent/EP1287550B1/en not_active Expired - Lifetime
- 2001-06-06 KR KR1020027016692A patent/KR100831180B1/ko not_active Expired - Lifetime
- 2001-06-06 AT AT01942043T patent/ATE462198T1/de not_active IP Right Cessation
- 2001-06-06 JP JP2002502824A patent/JP4942275B2/ja not_active Expired - Fee Related
- 2001-06-06 DE DE60141629T patent/DE60141629D1/de not_active Expired - Lifetime
- 2001-06-06 KR KR1020077026381A patent/KR100831182B1/ko not_active Expired - Lifetime
- 2001-06-06 CN CNB018107230A patent/CN1205655C/zh not_active Expired - Lifetime
- 2001-10-15 TW TW90125393A patent/TW574369B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI551681B (zh) * | 2014-07-18 | 2016-10-01 | 卡博特微電子公司 | 於cmp後使用之清潔組合物及其相關方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001095381A2 (en) | 2001-12-13 |
| EP1287550B1 (en) | 2010-03-24 |
| DE60141629D1 (de) | 2010-05-06 |
| JP2003536258A (ja) | 2003-12-02 |
| KR100831182B1 (ko) | 2008-05-22 |
| KR20070114326A (ko) | 2007-11-30 |
| WO2001095381A3 (en) | 2002-05-23 |
| KR20030025238A (ko) | 2003-03-28 |
| EP1287550A2 (en) | 2003-03-05 |
| JP4942275B2 (ja) | 2012-05-30 |
| KR100831180B1 (ko) | 2008-05-21 |
| ATE462198T1 (de) | 2010-04-15 |
| TW574369B (en) | 2004-02-01 |
| US6492308B1 (en) | 2002-12-10 |
| CN1433567A (zh) | 2003-07-30 |
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