CN1205582C - 激光包覆装置和方法 - Google Patents
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Abstract
激光器包覆系统(102)用于在基板上聚集材料,通过加热基板上的局部点形成一个熔池,向熔池中馈送材料以形成一个具有物理尺度的沉积。一个耦接到光电传感器的光探测装置用于监测沉积的物理尺度,光电传感器通过有孔的膜接收光,并且反馈控制器(104)根据电信号调节,由此控制材料沉积的速率。在优选实施例中,物理尺度是沉积的高度,系统还包括一个对于计算机辅助设计系统的界面,计算机辅助设计系统包括对要制造的制品的描绘,使得反馈控制器(104)能够比较沉积的物理尺度和对制品的描绘,并调节激光器(110)的能量。反馈控制器(104)包括调节激光器(110)的电路。
Description
本发明涉及一种利用激光束和一个沉积金属源、如典型的喷射粉状金属或金属线在工件表面形成熔融金属、也称作“熔池”的方法和装置。
目前,制造商面临的一个困难是新技术的概念和开发与实际产品进入市场之间的时间滞后。在制作中,对很多产品设计限制临界时间的步骤为制作铸模和压模。复杂的压模可能要在制造产品之前花费几个星期到一年的时间才能完成。在当前的制造工艺中,需要增加步骤克服本制造方法的不足。例如,对于铸模和压模,必须对产品进行机械加工以提供冷却通道和可以接受的表面光洁度。
沉积金属的已知工艺导致一种烧结的产品,这是由于捕获了氧分子以及不合适的粘结材料。甚至在发生可接受的材料沉积的情况下,该工艺也经常伴有聚集必须消除的应力。已知的一种这种工艺是激光包覆,其中,激光用于在基板材料上产生一个熔池,同时,引入、熔融并冶金结合第二种材料,典型的是一种粉或线。
一般根据相对于沉积材料的量包覆熔融较小的基板材料量来区分包覆和熔和,并且研磨系统把控制的金属颗粒量输送到此熔融量中。颗粒变得分散在整个熔融量中并在基板的外层上形成所需成份的沉积。从熔融量中除去激光束,如通过相对于光束的焦点移动基板工件会导致熔融量迅速冷凝。冷凝发生的速度之快使得熔融量通常保持熔融混合物的特性。
常规的激光包覆技术通过使用夹具、部位处理机等相对于焦点移动金属制品。光束焦点因此在空间中保持固定,作为洒粉点。金属制品的均匀移动通常需要一种难以制造、非常昂贵且通常不是非常好的复杂夹具,这种夹具尤其具有错综复杂的几何结构。为此,具有其它的几何结构较为简单的金属部件的激光包覆几乎不可能在连续均匀的基座上实现。到目前还不可能控制沉积的尺度和特性。为了把基本的包覆技术应用到具有严密容差、可接受的微结构和特性的部件生产中,必须严格控制尺度,这样才能以合理的价格并在合理的时间周期内生产制造。
本发明对于在基板上建立某种材料的自动控制方面有用,并尤其在通过反复包覆操作制造金属部件、如可能为所需少量制造、样机运转等方面有用。广义地且一般意义上讲,激光用于局部加热基板上的点,形成熔池,向其中送入粉末以形成一中具有物理尺度的沉积。耦接到光电晶体管的光学探测装置用于监测沉积的物理量,并且操纵反馈控制器以根据电信号调节激光,由此控制材料沉积的速率。
在优选实施例中,物理尺度是沉积的高度,系统还包括一个与计算机辅助设计(CAD)系统的界面,该计算机辅助设计系统包括对制作制品的描绘,使得反馈控制器能够与沉积的物理量比较,从而根据比较结果描绘并调节激光的能量。
就具体的装置而言,光学探测装置最好包括一个有孔的膜,来自沉积的光穿过孔到达光电探测器,并且反馈控制器包括根据来自沉积的光的出现与否调节激光的电路。
根据本发明独有特征的自动制造制品的系统包括:一个包含对制造制品的描绘的计算机辅助设计数据库,一个用于支撑基板的工作台,和一个用于相对于激光器和馈送装置移动基板的平移装置。在一种布局中,平移装置移动工作台而激光器和馈送装置保持稳固不动,在另一种不同的结构中,平移装置移动激光器和馈送装置而工作台保持稳固不动。还有另外一种结构,激光器/材料馈送装置和工作台/基板可以同时移动,尤其在反馈控制下。
根据本发明方法的一个方面,制品制造工艺包括下列步骤:
提供对制造制品的绘制;
提供一个基板,在基板上形成制品;
加热基板的局部区域以在其上形成一个熔池;
把材料馈送到熔池中,从而产生一个具有物理尺度的沉积;
光学监控沉积的物理量,
根据待制造制品的绘图控制物理量;和
前进到基板的不同区域直到完成制品的制造。
图1是金属直接沉积系统简图,该系统包括本发明的新颖的反馈控制器和一个自动生成部件的CAD/CAM系统;
图2是一个在基板制品上形成熔池的激光喷嘴简图;
图3是一个在基板制品上形成熔池的激光喷嘴简图,包括举例说明本发明反馈装置的一部分;
图4是光学监控系统简图,举例说明本发明反馈控制器的重要特征;
图5是熔池、光轴、掩膜和用于传感尺度的本发明光电晶体管的取向的简图;
图6类似于图5的掩膜以及掩膜关于沉积材料的布置,除了表示是否发生畸变的传感条件相对于图5反转;
图7是光电晶体管偏压配置的电路图;
图8a是通过反馈系统调节和控制之前对于激光器的模拟电压信号;
图8b表示作为沉积传感高度结果的晶体管电路上的电压降;
图8c所示的曲线表示从光电晶体管发出的控制激光器的数字信号;
图8d表示发给激光器的影响脉冲周期和激光器最终功率的修正的模拟信号;
图9表示通过在基板上的激光包覆形成的整体式结构实例;
图10是优选的缝合图案的曲线;
图11是包括用户国际组织提出的标号的残余应力管理数据点的基准抽样透视图;和
图12根据本发明方法制备的具有芯和腔体部位的工具压模示图。
本发明在于监测和控制基板上的材料、主要为金属的方法和装置。特别是,本发明可用于基于通过局域的激光加热的熔池形成/维持和并射主要是金属的粉末的过程。基板材料和射流结合形成沉积。在本发明的特有系统中,至少监测和控制沉积的一个尺度以提供一个具有所需的轮廓和严密容差之内的尺度的完整工件。特别是,沉积的大小与注入到熔池中的第二材料的量成正比。本发明特有的监测和控制装备包括一个反馈控制器,检测沉积的尺度并根据探测到的尺度改变激光束的脉冲周期。最好检测沉积的高度并利用沉积的高度反过来控制激光束的功率。
本发明将金属直接沉积技术和自动的直接反馈控制相结合,实现一个处于严密容差之内并具有可接受的冶金性能的最终产物。本发明将金属直接沉积(DMD)技术和有效控制相结合,构造具有复杂的几何形状和优良的冶金特性的处于严密容差之内的零部件、样品、铸模和压模。本发明还具备耦接CAD数据库和金属直接沉积的能力,由此可以在较短的时间内、在人力参与受限的自动系统中制造一个具有理想性能的完整部件。
下面将参考附图对本发明进行描述。图1是金属直接沉积系统102的简图,该系统包括本发明的新颖的反馈控制器104和一个自动生成部件的CAD/CAM系统106。考虑到的影响材料沉积尺度的因素包括激光功率、光束直径、光束的时间和空间分布、相互作用时间和粉流速率。在这些因素中,激光功率的适当监测和控制对在严密容差之内制造完整部件的能力有重要的影响。因此,本发明的反馈控制器104最好直接与数字控制器(NC)108合作,其中数字控制器本身控制系统的所有功能,包括激光器功率。
继续参见图1,系统包括一种具有适当的光束聚焦装置112的激光源。激光源安置在基板或工件上以便将光束聚焦到其上。工件基板被支撑在工作台上,虽然可以用任何数量的配置促使工件基板和激光喷嘴之间发生相对移动。系统还包括一个工作台114,电源116和冷却激光器的冷却器118。优选连续波激光器、或脉冲CO2激光器、YAG激光器或具有足以熔融沉积金材料的功率密度的任何其它波长的激光器作为激光源。典型地使用RF激励的激光器或高功率CO2激光器。最好激光束大致垂直地导向基板工件的表面。
如图2和3所示,系统包括一个喷嘴组件202,该组件在工件上操纵,通过把粉状金属喷射到光束中而施加一个包覆层。此类的激光器和喷嘴组件在美国专利申请US5,241,419(Pratt等)、US5,453,329(Everett等)和US5,477,026(Buongiomo)中有所描述。从Norcross,Georgia的量子激光器公司可得到合适的激光器喷嘴,该装置在美国专利申请4,724,299中描述。
喷嘴对光束和粉末提供一个公共出口,使得光束和粉末不断地导向工件基板上的同一点。在一种优选的结构中,激光器喷嘴组件包括一个具有第一和第二相隔的端部的喷嘴体,如美国专利申请US4,724,299中所述。光束通道在端部之间延伸并允许激光束从中穿过。包围第二端部的腔体与第二端部隔开,从而形成一个环形通道。腔体有一个与光束通道共轴的开口,允许激光束从中穿过。包覆粉供给系统与通道相连,向其提供包覆粉,使得粉存在于与光束共轴的开口中。
本发明的激光器喷嘴实现包覆成份的均匀,因为光束存在于基本上与包覆粉共轴的喷嘴中,二者具有相同的焦点。喷嘴有一个光束和粉的公共出口,使得二者不断地导向制品上的同一点。通过这种方式,可以实现一个公共焦点,确保包覆成份均匀。也可以通过侧喷嘴获得类似的效果,但侧喷嘴限制包覆的运动方向,而同心喷嘴允许在任何时刻改变沉积的方向。
常规的激光包覆技术通过使用夹具、部件处理器等相对于光束焦点移动金属制品。因此,光束焦点在空间中保持固定,作为喷射金属粉流的地点。金属制品的均匀移动通常需要一种难以制造、非常昂贵且通常不是非常好的复杂夹具,这种夹具尤其具有错综复杂的几何结构。为此,具有其它的几何结构较为简单的金属部件的激光包覆难于在连续均匀的基座上实现。在许多金属加工厂机械手已经成为操作设备的一个标准件。典型的机械手有一个具有五个自由度的手腕,每个自由度可以以恒定的速度移动。机械手可以是电动、液动或气动的,也可以是它们的结合。利用机械手和激光包覆系统结合有助于实现均匀的包覆。制品可以在空间保持固定,而喷嘴可以因此相对于制品与机械手臂共同运动。或者,喷嘴保持固定而制品通过机械手移动。
数值控制器108最好控制图1组件的所有操作元件,包括激光器的工作条件,CAD/CAM计算机106发出的用于建造制品、部件或工件的接收方向。NC控制器还接收反馈控制器发出的反馈控制信号以调节激光器的功率输出,并还控制工作台和激光喷嘴组件的相对位置。图1中利用的数字控制器可以从数个厂家获得,这些厂家包括FANUC,Allen Bradley,IGM等。CAD/CAM系统是一个常规的类型,它可以包括一个工作站,工作站可以由诸如SunMicrosystem、Silicon Graphics或Hewlett Packard任何一个商家提供。CAD/CAM软件所需特征之一是它有能力产生穿过基板的路径以用于材料沉积。这使得能够迅速地执行样机实验并直接由CAD尺寸形成实物三维物体,包括利用激光器喷嘴制成直接的金属样机。
从图2和3中看出,激光喷嘴202在基板制品206上形成一个熔池04。粉最好经过喷嘴208围绕激光束204喷射。投射到基板表面上的激光束最好不是高斯分布。投射的激光束是一个最大强度出现在周围的较为一般的环形。所以,与高斯分布相反,光束分布曲线的重点有较低的强度。这样就提供了一个温度分布较为均匀的熔池。但是,对于该方法也可以采用激光束的其它空间分布。
图3表示一个包括反馈控制装置302的直接金属沉积系统的简图。激光传输的能量由一个大箭头表示,小箭头表示被输送到粉输送系统中的粉。冷却水306显示出被输送到激光器喷嘴的出口。反馈单元302最好直接邻接激光和粉入射到工件310表面上的点设置。
图4是光学监测系统简图,它表示反馈控制系统的基本物理性质。一般来说,光学监测并电学控制尺度,如激光包覆熔池的厚度。熔池的高温熔融表面发射红外区域的强度。图4的杆状图形代表熔池。最好处于红外的窄带带通滤波器410放置在摄像透镜412的前面。示范性的摄像机包括一个135mm的焦距,为适当地放大熔池所需。
图形穿过筒状扩展镜416,之后,图象的一部分(大约10%)被反射到TV摄像机420的有效焦平面。注意,根据本发明并不一定要求有摄像机,可以通过一个人工操纵器监测。反射的图象最好通过一个放置在反射器和TV摄像机的有效焦平面之间的中等密度的滤波器422。光学图象的透射部分通过反射器,放大的图象掩盖到焦平面上提供空间分辨率。从掩膜426出射的图象通过透镜428并再到达感光装置,如光电晶体管430。
重要的是,把光轴440角和光学系列的放大率设置成可以通过光电晶体管430识别包覆厚度的小变化。参见图5和6中所示的系统取向,从一个确定的熔池发出的光既能被光电晶体管屏蔽,也能穿过光电晶体管。两种状态下的传感度最好小于0.010n(千分之十)英尺。即两种状态下的传感器阈值为-0.010n,返回“屏蔽”状态之前“未屏蔽”状态窗是-0.100n。
图4还表示一种方式,通过利用分束器或部分透射镜450把频谱分析结合到本发明中,这样可以把从物体接收到的光的一部分导向色散元件460,如衍射光栅,从色散元件发出的光可以通过物镜462准直并反馈到探测器464,沿线466输出谱线的内容信息。当熔池或包覆材料成分变化或结合到反馈回路、以根据材料成分改变系统的操作时,此谱线内容信息可以用于被动地监测和/或记录关于熔池或包覆材料成分的数据。例如,馈送的粉的成分可以根据设计规范改变并通过谱线分析检查,以确保发生材料成分的融合或改变。
还应注意到,虽然激光粉最好是一个可以根据储存的程序修正的变量,但其它的变量也可以单独或与激光粉一起使用。例如,可以改变激光斑点的行进或激光斑点的大小以男子设计规范,或者可以调节馈送的材料。的确,虽然适当地控制一组采用的参数,但也可以通过本发明以及材料的构造进行材料的去除,使得能够校正失误或缺陷,或者能够相对于新的设计规范调整预存部分。
通过一个控制激光功率的电路处理光电晶体管信号。大部分激光器具有受信号模拟电压信号控制的能力,例如0V电压和12V电压将分别对应于无功率和满功率。二者之间的任何电压将产生一个相应的输出功率。大部分激光器可以在一个毫秒内响应此模拟电压。光电晶体管能够探测光的存在与否,并且它的导电率可以变化。一旦曝光,光电晶体管的导电率就升高,并因此光电晶体管两端的电压降下降。如图7所示,可以选择“R1”值调节适当的敏感度,使得V+Vout=5v。在此特例中,如果以10V的信号获得总功率,则5V的电压将提供50%的总功率。
参见图5,图中表示一个熔融的沉积502,掩膜504设置在沉积和光电晶体管506之间。为了清楚起见删除了系统的其它元件。可以看出,掩膜为平面形状,是一个有孔的固体,光可从中穿过。当包覆的厚度达到预定水平时,选定波长形式的光从沉积的材料中穿过掩膜并入射到光电晶体管,如图中所示。反之,只要沉积的水平低于掩膜中的孔,光将入射不到光电晶体管上。有光和无光之间的状态可用于控制和调节激光器的工作。
相反的状态示于图6,此处,只要光穿过掩膜,包覆沉积的厚度就可以接收;并且光一旦被禁止穿过掩膜,就感应到不可接收的状态,因为没有光入射到光电晶体管上。当正面图中熔池的高度改变时,图象降低直到光开始入射到光电晶体管上。在某些一致的高度,电压(Vout)达到从“通光”向“闭光”切换的幅度。
图8是一系列表示控制激光器工作的信号之间、光电晶体管以电压降的形式响应于有光和无光状态以及光电晶体管信号控制激光器功率的曲线。在所有的情况下,水平轴代表时间,垂直轴代表电压。图8a中的第一条曲线表示任何调节之前的激光器的由本发明的反馈系统控制的模拟电压信号。图8b中的第二条曲线表示光电晶体管两端的电压降。在第一条曲线中可以看出,在通过反馈系统的任何控制之前,激光器的模拟电压是均衡的并且未随时间调整。参见图8的第二条曲线,它表示包覆操作期间图7的光电晶体管两端的电压降。
在工作循环开始,光电晶体管的阻抗较大,这意味着感应不到从熔融表面发出的并透过选择的窄带带通滤波器的光。结果,光电晶体管电子两端的电压降较低,在探测到光的状态下显示出一个表示光电晶体管的阻抗较低并且光电晶体管电子两端的电压降也较高的峰。在图8c的第三条曲线中,光电晶体管两端的峰电压降提供一个数字化的信号。图8d的第四曲线表示数字信号已经修正了发送给激光器的实际信号并影响脉冲周期和激光器的最终功率。从图8的第四条曲线看出,已经对应于光电晶体管的电压降以及监测的入射光波长的发送调节了激光器的电压-时间。
在本发明的反馈方面,光电晶体管给图1的数字控制器发送一个信号,调节供给激光器的电压,控制激光器功率并最终调节入射到工件表面上的激光周期。模拟信号的电压对应于激光功率。这使得能够直接沉积金属并当形成一层叠置一层的包覆时控制每一层的厚度。然后反馈系统控制工件的累计尺度。本发明的反馈控制器实际上是告诉激光器工件的尺度是否超出,然后减小每个脉冲的通光时间。通光时发生沉积。如果某一特定的地点太高,则反馈回路介质激光功率并大大减少沉积。本发明的自动控制和调节至关重要,因为手动调节无效。
在使用中,系统可以用于一个象素挨一个象素地沉积材料。如果没有反馈控制,则几分种之后或者积累了几层之后工件可能变得扭曲,之后,条件的进一步衰减可能导致扭曲和损坏。本发明反馈控制系统的优点在于扭曲发生之前,光电晶体管感应在工件材料的特有波长处的有光/无光状态,并对计算机编程以减少沉积,直到反馈控制器感应到一个可以接收的状态,此时才允许脉冲扩大到它们的总量。
例1
对于此项研究,把铬-钼热加工模具钢直接沉积到锻件H13的基板上。通常用于压铸的此合金由于其在压铸工具的快速制造中的潜能和大量用途而被分析研究。在下列的范围内对DMD和锻件H13的热处理进行比较:1)“as clad”硬度,可锻性和微结构,2)初始锻炼响应,和3)对于奥氏体化(在1010℃)的油淬火材料的锻炼响应。
为了仿制一个商业系统,分析两个包覆沉积模式。选择低的功率和低的金属沉积速率,因为此工艺对应于用于零部件和边缘的参数。使用高功率、高金属沉积速率的操作,因为这对应于用于加入体材料的方法。这两种形式的工艺分别称作精包覆和粗包覆。反馈系统用在(细)包覆中。
用于粗包覆的工作条件包括用于制造一个厚的一维垂直壁的光栅化的1.1~3.5mm焦点光斑。激光器功率为4500W,粉馈送速率为16gm/min。粉垂直于光栅方向输送。在每个通道的端部截止光束和粉流,并在相同的方向积累随后的层,同时以750mm/min的速度平移。连续地沉积层,在碳钢基板上产生一个3.5mm宽、70mm高和120mm长的层。在此工艺中,不测量包覆的温度,但在沉积了第一个5-10层后观察到可见光辐射。由此“as-clad”样品机械加工一个垂直于包覆方向取向的可拉伸条,如图9所示。在拉伸测试中应变仪测量量规部分的应变。
对于细包覆,同心输送金属粉和屏蔽气体。熔池由一个0.6mm直径的斑形成。两种类型的包覆工艺的样品速度为750mm/min。对于精细包覆,激光功率和送粉速率分别为1000W和5gm/min。监测做为样品的熔池高度的反馈系统横向延伸成一个缝合图案,如图10所示。每个沉积层的厚度是250微米。复制该图案以产生一个90mm高的板坯。H13用于基板和包覆,从而使得在热处理实验中激光包覆和锻件材料之间可以有一个直接的比较。
在热处理条件下,包覆工件和锻件H13的硬度和微结构分析非常类似。二者包含回火的马氏体和一些保留的马氏体。在1010℃下奥氏体化一小时后,通光散射已经消除了包覆中大部分枝状固体结构的迹象。但是,合金分凝导致的条带效应在锻件基板中很明显。这种分析的结果证明,通过包覆构建多个层而形成一个具有与锻件的常规层底铸型特性相同的工件是可能的。
例2
管理残余应力和生成的畸变是证实制造三维元件的能力的本工艺成功的一个关键因素。残余的累计应力是在制造工具钢组件期间导致裂纹的最大原因。为了理解应力的产生,设计一个简单的样品来估算每层中积累的应力。这导致在积累的残余应力可能导致裂纹之前构建多层的策略。在沉积预定数量的层之后以及沉积下一层之前执行应力的消除。此策略导致成功地制造完整尺寸的IMS-T1元件,如图11所示。相信这是第一次在H13工具钢中通过直接沉积制造此类IMS-Ta测试装置。
例2的工艺参数列出如下:
NSF T1样品
材料:H 13粉
激光功率:100W
沉积速率:-5gr/min
分层的厚度:0.01″
实际激光开启加工时间:50hrs
总制造时间:-100hrs
应力消除时间:-24hrs(6×4hrs)
总时间:-124hrs
把制造的样品送到独立的实验室进行残余应力测量。图11还表示测试应力的点。在最后的进程中对地点2、6和5沉积并由此表示残余压应力,因为它们没有消除应力。在较早的进程中沉积并随后消除应力的其它位置表现出可以忽略的残余应力,而在没有消除应力的位置处的最大应力是+49.4KSI。
制备植入铜冷却块和冷却水通道的压射成型压墨,并还制造一个修边模。这些元件具有非常高的尺寸精度,所有的尺寸误差容限为千分之一英寸。这些例子表明了用H13合金成功制造三维元件的DMD工艺的可行性。此工艺能够通过细致地控制工艺参数而控制微结构及其特性。激光沉积元件和锻件H13钢元件的热处理响应相同。实际上,热处理的激光包覆H13比锻件H13结构上更均匀。
本发明的方法和装置提供了建造并细化几乎任何可以从计算机数据库中产生的几何形状的元件。这有很多重要的应用。其中一项就是快速研究样机/制造,这样使得能够有更快的样机或制造工具的周转时间。另一项应用是用户特定的少量部件的生产,可以以经济的方式进行小量的生产。这对于制造医疗器械非常有利,如对于个体部位的人工修复。其它的潜在应用包括聚合物注入/制造的模具,大大降低周转时间的Al压铸模具的插入物和层的施釉。
本发明提供控制成分、微结构、残余应力和机械特性的能力。该系统能够通过利用进行工艺控制的反馈回路并在自动工作的反馈控制回路传感器中集成硬件和软件来进行“光截止”制造。本系统中还可以很容易地加入其它特征,包括压电和点传感器,用于测量累计的残余应力,应变和应力导致的畸变,并监测裂纹的引发。
Claims (24)
1.一种自动控制基板上的层状材料沉积的系统,包括:一个可控激光器,具有指向基板上局域化的区域以在其上形成一个熔池的光束;
把材料馈送到由激光熔化的熔池中以产生一个具有相对于基板的高度的材料沉积的装置;
一个耦接到光电传感器的光探测装置,光电传感器可输出一个作为相对于基板的高度的函数的电信号;和
一个反馈控制器,可自动调节作为电信号函数的材料沉积速率。
2.如权利要求1所述的系统,其特征在于光电传感器输出一个做为沉积的材料成分的函数的电信号。
3.如权利要求1所述的系统,还包括一个对于计算机辅助设计(CAD)系统的界面,计算机辅助设计系统包括对要制造的制品的描绘,并且其特征在于反馈控制器还进行相对于基板的高度与制品的描绘的比较,并据此调节材料的沉积速率。
4.如权利要求1所述的系统,其特征在于光学探测装置包括一个有孔的膜,来自沉积的光穿过孔到达光电探测器,反馈控制器还包括用于探测是否出现来自沉积的光的电路。
5.如权利要求1所述的系统,其特征在于光学探测装置包括一个光学耦合到探测器的色散元件,用于确定沉积的材料成分。
6.一种自动的激光包覆系统,用于调整沉积在基板上的材料量,包括:
一个激光器用于输出光束,并包含把光束聚焦到基板的局部区域上的装置,激光器具有足以在至少局部区域内熔化底板的能量;
相对移动光束和基板的装置;
馈送被熔化进熔池中的材料以积累到局部区域中成为材料沉积的装置;和
反馈控制装置,感应材料沉积相对于基板的高度并根据相对于基板的高度调节材料沉积的速率。
7.如权利要求6所述的系统,其特征在于反馈控制装置调节光束的功率,从而调节材料沉积的速率。
8.如权利要求6所述的系统,其特征在于反馈控制装置调节光束的光斑大小,从而调节材料沉积的速率。
9.如权利要求6所述的系统,其特征在于反馈控制装置调节材料的馈送速率,从而调节材料沉积的速率。
10.如权利要求6所述的系统,其特征在于反馈控制装置调节光束和基板之间的移动速率,从而调节材料沉积的速率。
11.如权利要求6所述的系统,其特征在于反馈控制装置还感应基板以上材料沉积的化学成分。
12.如权利要求6所述的系统,其特征在于反馈控制装置还感应熔池的化学成分。
13.如权利要求6所述的系统,还包括一个对于计算机辅助设计(CAD)系统的界面,CAD系统包括对要制造的制品的描绘,并且其特征在于反馈控制系统还进行相对于基板的高度与制品的描绘的比较,并据此自动调节材料的沉积速率。
14.一个自动制造制品的系统,包括:
一个包含对要制造的制品的描绘的计算机辅助设计数据库;
一个用于支撑基板的工作台;
一个可控激光器,具有一个指向基板的局部区域以在其上形成熔池的光束;
耦接到激光器的装置,用于把熔化的材料馈送到熔池中以产生一个具有相对于基板的高度的材料沉积;
相对于激光器和馈送装置移动基板的平移装置;
光学探测装置,当沉积产生时输出一个表示材料沉积相对于基板的高度的电信号;和
一个反馈控制器,与平移装置和激光器联接,用于根据计算机辅助设计数据库中要制造的制品的描绘自动调节材料沉积相对于基板的高度。
15.如权利要求14所述的系统,其特征在于平移装置移动工作台而激光器和馈送装置保持稳固不动。
16.如权利要求14所述的系统,其特征在于平移装置移动激光器和馈送装置而工作台保持稳固不动。
17.如权利要求14所述的系统,其特征在于基板是金属,并且馈送到熔池中的材料是金属粉。
18.如权利要求14所述的系统,其特征在于光学探测装置包括一个有孔的膜,来自沉积的光穿过孔到达光电探测器。
19.一种制造制品的方法,包括下列步骤:
a)提供对要制造的制品的绘制;
b)提供一个基板,在基板上形成制品;
c)加热基板的局部区域以在其上形成一个熔池;
d)把材料馈送到熔池中,从而产生一个具有相对于基板的高度的沉积;
e)光学监控材料沉积的相对于基板的高度,
f)根据待制造制品的描绘自动控制高度;
g)前进到基板的不同区域;和
h)重复步骤c)至g)直到完成制品的制造。
20.如权利要求19所述的方法,其特征在于步骤g)包括移动基板而激光器和馈送装置保持稳固不动。
21.如权利要求19所述的方法,其特征在于步骤g)包括移动激光器和馈送装置而基板保持稳固不动。
22.如权利要求19所述的方法,其特征在于基板是金属,并且馈送到熔池中的材料是金属粉。
23.如权利要求19所述的方法,其特征在于步骤g)包括倾斜基板而激光器和馈送装置保持稳固不动。
24.如权利要求19所述的方法,其特征在于相对于基板的高度垂直于基板。
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US09/107,912 US6122564A (en) | 1998-06-30 | 1998-06-30 | Apparatus and methods for monitoring and controlling multi-layer laser cladding |
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- 1999-06-22 JP JP2000557422A patent/JP2002519200A/ja active Pending
- 1999-06-22 BR BRPI9912231A patent/BRPI9912231B1/pt not_active IP Right Cessation
- 1999-06-22 CN CNB998092746A patent/CN1205582C/zh not_active Expired - Lifetime
- 1999-06-22 AU AU47049/99A patent/AU754346B2/en not_active Expired
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- 1999-06-22 KR KR1020007014994A patent/KR100606476B1/ko not_active IP Right Cessation
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2000
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CN110997217A (zh) * | 2018-07-30 | 2020-04-10 | 三菱电机株式会社 | 层积条件控制装置 |
CN110997217B (zh) * | 2018-07-30 | 2021-07-06 | 三菱电机株式会社 | 层积条件控制装置 |
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EP1099184A4 (en) | 2009-04-08 |
JP2002519200A (ja) | 2002-07-02 |
KR20010078755A (ko) | 2001-08-21 |
CN1315022A (zh) | 2001-09-26 |
KR100606476B1 (ko) | 2006-08-01 |
NO20006700L (no) | 2001-02-27 |
BR9912231A (pt) | 2002-01-29 |
WO2000000921A9 (en) | 2000-05-25 |
BRPI9912231B1 (pt) | 2015-12-08 |
AU754346B2 (en) | 2002-11-14 |
JP2011167768A (ja) | 2011-09-01 |
WO2000000921A1 (en) | 2000-01-06 |
ES2459601T3 (es) | 2014-05-09 |
EP1099184B1 (en) | 2014-01-22 |
CA2336583C (en) | 2008-05-06 |
RU2228243C2 (ru) | 2004-05-10 |
EP1099184A1 (en) | 2001-05-16 |
CA2336583A1 (en) | 2000-01-06 |
US6122564A (en) | 2000-09-19 |
NO20006700D0 (no) | 2000-12-29 |
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