CN120202541A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

Info

Publication number
CN120202541A
CN120202541A CN202280101756.8A CN202280101756A CN120202541A CN 120202541 A CN120202541 A CN 120202541A CN 202280101756 A CN202280101756 A CN 202280101756A CN 120202541 A CN120202541 A CN 120202541A
Authority
CN
China
Prior art keywords
semiconductor device
metal block
lead electrode
bonded
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280101756.8A
Other languages
English (en)
Chinese (zh)
Inventor
田中浩二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN120202541A publication Critical patent/CN120202541A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages

Landscapes

  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
CN202280101756.8A 2022-11-22 2022-11-22 半导体装置及半导体装置的制造方法 Pending CN120202541A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/043190 WO2024111058A1 (ja) 2022-11-22 2022-11-22 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN120202541A true CN120202541A (zh) 2025-06-24

Family

ID=91195888

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280101756.8A Pending CN120202541A (zh) 2022-11-22 2022-11-22 半导体装置及半导体装置的制造方法

Country Status (5)

Country Link
US (1) US20250372496A1 (https=)
JP (1) JPWO2024111058A1 (https=)
CN (1) CN120202541A (https=)
DE (1) DE112022008031T5 (https=)
WO (1) WO2024111058A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245171A (ja) * 2005-03-02 2006-09-14 Toshiba Corp 電子部品モジュール
JP2007088030A (ja) * 2005-09-20 2007-04-05 Fuji Electric Holdings Co Ltd 半導体装置
JP5239291B2 (ja) * 2007-10-24 2013-07-17 富士電機株式会社 半導体装置およびその製造方法
JP5965687B2 (ja) * 2012-03-23 2016-08-10 株式会社 日立パワーデバイス パワー半導体モジュール
JP7026451B2 (ja) * 2017-05-11 2022-02-28 三菱電機株式会社 パワー半導体モジュール及びその製造方法並びに電力変換装置

Also Published As

Publication number Publication date
US20250372496A1 (en) 2025-12-04
JPWO2024111058A1 (https=) 2024-05-30
WO2024111058A1 (ja) 2024-05-30
DE112022008031T5 (de) 2025-11-06

Similar Documents

Publication Publication Date Title
JP6602480B2 (ja) 半導体装置
JP4635564B2 (ja) 半導体装置
CN104025287B (zh) 半导体装置
US12057375B2 (en) Semiconductor device and method for manufacturing semiconductor device
KR101643332B1 (ko) 초음파 웰딩을 이용한 클립 본딩 반도체 칩 패키지 및 그 제조 방법
JP6433590B2 (ja) 電力用半導体装置の製造方法および電力用半導体装置
CN109196629B (zh) 接合装置
KR20000057810A (ko) 반도체 장치
JP6366723B2 (ja) 半導体装置およびその製造方法
CN102473653A (zh) 半导体装置的制造方法以及半导体装置
US20250183125A1 (en) Electronic device and method for manufacturing electronic device
JP3832334B2 (ja) 半導体チップ実装基板およびその製造方法
JP5218009B2 (ja) 半導体装置
JP7548086B2 (ja) 半導体装置の製造方法
JP2002026067A (ja) 半導体装置及びその実装方法
JPH11265976A (ja) パワー半導体モジュールおよびその製造方法
JP2003133329A (ja) 半導体装置
JP7625097B2 (ja) 半導体装置及び半導体装置の製造方法
CN120202541A (zh) 半导体装置及半导体装置的制造方法
JP7480715B2 (ja) 半導体装置
CN115023804B (zh) 电子器件和电子器件的制造方法
JP7665049B2 (ja) 半導体装置および半導体装置の製造方法
JP2005072098A (ja) 半導体装置
WO2025134222A1 (ja) 半導体装置及びその製造方法
JP4254487B2 (ja) 半導体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination