CN1197089C - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1197089C
CN1197089C CNB008041466A CN00804146A CN1197089C CN 1197089 C CN1197089 C CN 1197089C CN B008041466 A CNB008041466 A CN B008041466A CN 00804146 A CN00804146 A CN 00804146A CN 1197089 C CN1197089 C CN 1197089C
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CN
China
Prior art keywords
mentioned
current potential
switch
power supply
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008041466A
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English (en)
Chinese (zh)
Other versions
CN1341262A (zh
Inventor
竹村理一朗
伊藤清男
关口知纪
阪田健
木村胜高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1341262A publication Critical patent/CN1341262A/zh
Application granted granted Critical
Publication of CN1197089C publication Critical patent/CN1197089C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
CNB008041466A 1999-02-22 2000-02-09 半导体器件 Expired - Fee Related CN1197089C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11042666A JP2000243085A (ja) 1999-02-22 1999-02-22 半導体装置
JP042666/1999 1999-02-22
JP042666/99 1999-02-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2005100070965A Division CN1652252A (zh) 1999-02-22 2000-02-09 半导体器件

Publications (2)

Publication Number Publication Date
CN1341262A CN1341262A (zh) 2002-03-20
CN1197089C true CN1197089C (zh) 2005-04-13

Family

ID=12642354

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2005100070965A Pending CN1652252A (zh) 1999-02-22 2000-02-09 半导体器件
CNB008041466A Expired - Fee Related CN1197089C (zh) 1999-02-22 2000-02-09 半导体器件

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNA2005100070965A Pending CN1652252A (zh) 1999-02-22 2000-02-09 半导体器件

Country Status (8)

Country Link
US (1) US6477100B2 (enExample)
EP (1) EP1164595A4 (enExample)
JP (1) JP2000243085A (enExample)
KR (1) KR100717225B1 (enExample)
CN (2) CN1652252A (enExample)
AU (1) AU2459200A (enExample)
TW (1) TW462056B (enExample)
WO (1) WO2000051134A1 (enExample)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353312A (ja) 2001-05-24 2002-12-06 Hitachi Ltd 半導体集積回路装置
US6618307B2 (en) * 2001-09-05 2003-09-09 Sun Microsystems, Inc. Dynamic DRAM sense amplifier
JP2003228981A (ja) * 2002-02-05 2003-08-15 Toshiba Corp 半導体記憶装置
US6917552B2 (en) 2002-03-05 2005-07-12 Renesas Technology Corporation Semiconductor device using high-speed sense amplifier
JP4031651B2 (ja) 2002-03-05 2008-01-09 株式会社日立製作所 半導体装置
US6987693B2 (en) 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
JP4420823B2 (ja) * 2002-09-24 2010-02-24 サンディスク コーポレイション 感知動作が改善された不揮発性メモリおよび方法
US7327619B2 (en) 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7443757B2 (en) 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7046568B2 (en) 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US7324393B2 (en) 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US6873559B2 (en) * 2003-01-13 2005-03-29 Micron Technology, Inc. Method and apparatus for enhanced sensing of low voltage memory
KR100546188B1 (ko) * 2003-05-24 2006-01-24 주식회사 하이닉스반도체 감지증폭수단을 포함하는 반도체 메모리 장치 및 그의감지증폭수단을 오버드라이브 하는 방법
US7030664B2 (en) * 2003-06-30 2006-04-18 Sun Microsystems, Inc. Half-rail differential driver circuit
JP2005085289A (ja) * 2003-09-04 2005-03-31 Elpida Memory Inc 半導体記憶装置
US6956770B2 (en) 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7064980B2 (en) 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
JP2005101466A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体記憶装置
KR100583959B1 (ko) * 2004-01-07 2006-05-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 데이터 라이트 및 리드방법
JP4317777B2 (ja) * 2004-03-10 2009-08-19 パナソニック株式会社 半導体集積回路
KR100604660B1 (ko) * 2004-04-30 2006-07-26 주식회사 하이닉스반도체 오버드라이버의 구동력을 조절하는 반도체 메모리 소자
US7079434B2 (en) * 2004-09-02 2006-07-18 Micron Technology, Inc. Noise suppression in memory device sensing
US7158421B2 (en) 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
KR100571650B1 (ko) * 2005-03-31 2006-04-17 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
US7447078B2 (en) 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
KR100586557B1 (ko) * 2005-04-01 2006-06-08 주식회사 하이닉스반도체 센스앰프 오버드라이빙 회로 및 반도체 장치
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7463521B2 (en) 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
KR100673903B1 (ko) * 2005-04-30 2007-01-25 주식회사 하이닉스반도체 비트라인 오버 드라이빙 스킴을 가진 반도체 메모리 소자 및 그의 비트라인 감지증폭기 구동방법
JP4433311B2 (ja) * 2005-09-12 2010-03-17 ソニー株式会社 半導体記憶装置、電子機器及びモード設定方法
TW200721163A (en) 2005-09-23 2007-06-01 Zmos Technology Inc Low power memory control circuits and methods
US7599243B2 (en) * 2005-09-28 2009-10-06 Hynix Semiconductor, Inc. Sense amplifier over driver control circuit and method for controlling sense amplifier of semiconductor device
KR100834390B1 (ko) * 2005-09-29 2008-06-04 주식회사 하이닉스반도체 반도체 메모리 장치
US7505297B2 (en) 2005-09-29 2009-03-17 Hynix Semiconductor, Inc. Semiconductor memory device
TWI301699B (en) * 2005-10-18 2008-10-01 Sunplus Technology Co Ltd Transmitting circuit, receiving circuit, interface switching module and interface switching method for sata and sas interface
JP4874627B2 (ja) 2005-11-01 2012-02-15 エルピーダメモリ株式会社 半導体記憶装置
KR100668497B1 (ko) * 2005-11-09 2007-01-12 주식회사 하이닉스반도체 비트라인 센스앰프 드라이버를 구비한 반도체 메모리 장치
KR100902127B1 (ko) * 2006-02-22 2009-06-09 주식회사 하이닉스반도체 반도체 메모리 장치의 센스 증폭 회로 및 그의 구동 방법
KR100886628B1 (ko) * 2006-05-10 2009-03-04 주식회사 하이닉스반도체 반도체 장치의 내부전압 생성회로
JP2008010040A (ja) * 2006-06-27 2008-01-17 Elpida Memory Inc 半導体記憶装置
KR100911187B1 (ko) * 2007-03-13 2009-08-06 주식회사 하이닉스반도체 래치 구조 및 그것을 포함하는 비트라인 센스앰프 구조
JP2009038306A (ja) * 2007-08-03 2009-02-19 Elpida Memory Inc 半導体記憶装置
US8183628B2 (en) 2007-10-29 2012-05-22 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
JP5317343B2 (ja) 2009-04-28 2013-10-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US8212298B2 (en) 2008-01-29 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device and methods of producing it
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP5237974B2 (ja) * 2008-01-29 2013-07-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
WO2009096001A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
JP5486172B2 (ja) * 2008-08-07 2014-05-07 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR20100034989A (ko) * 2008-09-25 2010-04-02 삼성전자주식회사 비대칭 구조의 센스 앰프를 구비하는 반도체 장치
JP5356970B2 (ja) 2009-10-01 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
KR101211442B1 (ko) 2010-03-08 2012-12-12 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 고체 촬상 장치
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
JP5066590B2 (ja) 2010-06-09 2012-11-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法
JP5087655B2 (ja) 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
KR101245542B1 (ko) 2011-06-10 2013-03-20 실리콘알엔디(주) 트랙 앤드 홀드 회로 및 트랙 앤드 홀드 방법
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
CN109817263B (zh) * 2018-12-27 2024-04-02 西安紫光国芯半导体有限公司 改善dram中灵敏放大器读稳定性的读辅助电路、方法以及灵敏放大器
CN113113064B (zh) * 2021-05-12 2024-05-24 上海交通大学 Sram存储单元电路
KR102324983B1 (ko) 2021-07-30 2021-11-11 (주)푸드포트 쿨링이 가능한 모듈형 태양광 발전장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2758504B2 (ja) * 1990-07-06 1998-05-28 松下電器産業株式会社 半導体記憶装置
KR0133973B1 (ko) 1993-02-25 1998-04-20 기다오까 다까시 반도체 기억장치
JP3561012B2 (ja) * 1994-11-07 2004-09-02 株式会社ルネサステクノロジ 半導体集積回路装置
JPH0955482A (ja) * 1995-06-08 1997-02-25 Mitsubishi Electric Corp 半導体記憶装置
TW318932B (enExample) * 1995-12-28 1997-11-01 Hitachi Ltd
JP3787361B2 (ja) * 1996-02-28 2006-06-21 株式会社 日立製作所 強誘電体記憶装置
JP3672384B2 (ja) * 1996-07-24 2005-07-20 沖電気工業株式会社 センス回路
JP3386684B2 (ja) * 1997-03-19 2003-03-17 シャープ株式会社 半導体記憶装置
JP4046383B2 (ja) * 1997-04-01 2008-02-13 株式会社ルネサステクノロジ 半導体集積回路装置
JPH10284705A (ja) * 1997-04-10 1998-10-23 Hitachi Ltd ダイナミック型ｒａｍ
JP3077651B2 (ja) * 1997-11-17 2000-08-14 日本電気株式会社 半導体記憶装置
JP4017248B2 (ja) * 1998-04-10 2007-12-05 株式会社日立製作所 半導体装置
JP2000058785A (ja) * 1998-08-07 2000-02-25 Hitachi Ltd ダイナミック型ｒａｍ

Also Published As

Publication number Publication date
TW462056B (en) 2001-11-01
WO2000051134A1 (en) 2000-08-31
CN1652252A (zh) 2005-08-10
AU2459200A (en) 2000-09-14
JP2000243085A (ja) 2000-09-08
KR100717225B1 (ko) 2007-05-11
KR20010113699A (ko) 2001-12-28
US6477100B2 (en) 2002-11-05
EP1164595A1 (en) 2001-12-19
US20020000624A1 (en) 2002-01-03
CN1341262A (zh) 2002-03-20
EP1164595A4 (en) 2006-05-10

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