CN1191605C - 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备 - Google Patents

在电镀和/或电抛光期间装载和定位半导体工件的方法与设备 Download PDF

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Publication number
CN1191605C
CN1191605C CNB998137944A CN99813794A CN1191605C CN 1191605 C CN1191605 C CN 1191605C CN B998137944 A CNB998137944 A CN B998137944A CN 99813794 A CN99813794 A CN 99813794A CN 1191605 C CN1191605 C CN 1191605C
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CN
China
Prior art keywords
wafer
electroplating
electropolishing
assembly
wafer holder
Prior art date
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Expired - Fee Related
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CNB998137944A
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English (en)
Chinese (zh)
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CN1346510A (zh
Inventor
王辉
费利克斯·故特曼
沃哈·努克
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ACM Research Inc
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ACM Research Inc
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Publication of CN1346510A publication Critical patent/CN1346510A/zh
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Publication of CN1191605C publication Critical patent/CN1191605C/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
CNB998137944A 1998-11-28 1999-11-24 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备 Expired - Fee Related CN1191605C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11013698P 1998-11-28 1998-11-28
US60/110,136 1998-11-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100037736A Division CN100382235C (zh) 1998-11-28 1999-11-24 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法

Publications (2)

Publication Number Publication Date
CN1346510A CN1346510A (zh) 2002-04-24
CN1191605C true CN1191605C (zh) 2005-03-02

Family

ID=22331393

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB998137944A Expired - Fee Related CN1191605C (zh) 1998-11-28 1999-11-24 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备
CNB2005100037736A Expired - Fee Related CN100382235C (zh) 1998-11-28 1999-11-24 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法

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CNB2005100037736A Expired - Fee Related CN100382235C (zh) 1998-11-28 1999-11-24 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法

Country Status (9)

Country Link
EP (1) EP1133786A2 (enrdf_load_stackoverflow)
JP (2) JP2002531702A (enrdf_load_stackoverflow)
KR (3) KR100562011B1 (enrdf_load_stackoverflow)
CN (2) CN1191605C (enrdf_load_stackoverflow)
AU (1) AU3105400A (enrdf_load_stackoverflow)
CA (1) CA2352160A1 (enrdf_load_stackoverflow)
IL (1) IL143316A (enrdf_load_stackoverflow)
TW (1) TW430919B (enrdf_load_stackoverflow)
WO (1) WO2000033356A2 (enrdf_load_stackoverflow)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010020807A (ko) 1999-05-03 2001-03-15 조셉 제이. 스위니 고정 연마재 제품을 사전-조절하는 방법
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
JP4644926B2 (ja) * 2000-10-13 2011-03-09 ソニー株式会社 半導体製造装置および半導体装置の製造方法
US6896776B2 (en) 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
WO2002083995A1 (en) * 2001-04-12 2002-10-24 Arthur, Keigler Method of and apparatus for controlling fluid flow
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
US7150816B2 (en) * 2001-08-31 2006-12-19 Semitool, Inc. Apparatus and method for deposition of an electrophoretic emulsion
US6837983B2 (en) 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
TWI275436B (en) 2002-01-31 2007-03-11 Ebara Corp Electrochemical machining device, and substrate processing apparatus and method
TWI274393B (en) * 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
CA2491951A1 (en) * 2002-07-22 2004-01-29 Acm Research, Inc. Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
JP3860111B2 (ja) * 2002-12-19 2006-12-20 大日本スクリーン製造株式会社 メッキ装置およびメッキ方法
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
US8804535B2 (en) * 2009-03-25 2014-08-12 Avaya Inc. System and method for sending packets using another device's network address
TWI410531B (zh) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg 直立式電鍍設備及其電鍍方法
KR101211826B1 (ko) * 2010-06-14 2012-12-18 연세대학교 산학협력단 자기유변유체를 이용한 피가공물의 연마장치 및 그 연마방법
JP5782398B2 (ja) 2012-03-27 2015-09-24 株式会社荏原製作所 めっき方法及びめっき装置
US9399827B2 (en) 2013-04-29 2016-07-26 Applied Materials, Inc. Microelectronic substrate electro processing system
JP6186499B2 (ja) * 2013-05-09 2017-08-23 エーシーエム リサーチ (シャンハイ) インコーポレーテッド ウェハのメッキおよび/または研磨のための装置および方法
KR101353378B1 (ko) * 2013-08-19 2014-01-22 주식회사 케이엠 주사기용 믹싱 조인트
CN104465481A (zh) * 2013-09-22 2015-03-25 盛美半导体设备(上海)有限公司 晶圆夹盘
CN105297127B (zh) * 2014-05-30 2019-04-05 盛美半导体设备(上海)有限公司 带有电极的喷头装置
JP6449091B2 (ja) * 2015-04-20 2019-01-09 東京エレクトロン株式会社 スリップリング、支持機構及びプラズマ処理装置
US10053793B2 (en) * 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
GB201701166D0 (en) 2017-01-24 2017-03-08 Picofluidics Ltd An apparatus for electrochemically processing semiconductor substrates
KR102156430B1 (ko) * 2020-04-28 2020-09-15 주식회사 스마트코리아피씨비 회전식 기판 도금장치
EP3998374A4 (en) 2020-09-16 2022-08-03 Changxin Memory Technologies, Inc. DEVICE AND METHOD FOR AIR LEAK DETECTION AND METHOD FOR ELECTROPLATING WAFER
CN114262920A (zh) * 2020-09-16 2022-04-01 长鑫存储技术有限公司 晶圆电镀设备、漏气检测装置和方法、晶圆电镀方法
CN112144096B (zh) * 2020-09-25 2022-05-10 深圳市生利科技有限公司 一种锌镍合金电镀设备
CN113013078A (zh) * 2021-03-04 2021-06-22 苏州竣合信半导体科技有限公司 一种用于芯片定位的兼容芯片定位槽及其使用方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419649A (en) * 1977-07-15 1979-02-14 Hitachi Ltd Wafer holding jig for electrtolytic plating
JPS58181898A (ja) * 1982-04-14 1983-10-24 Fujitsu Ltd メツキ用給電装置
JPS6396292A (ja) * 1986-10-13 1988-04-27 Mitsubishi Electric Corp 電解メツキ装置
JPH0375394A (ja) * 1989-08-18 1991-03-29 Fujitsu Ltd メッキ装置
JPH03232994A (ja) * 1990-02-06 1991-10-16 Fujitsu Ltd メッキ装置
JP2567716B2 (ja) * 1990-03-20 1996-12-25 富士通株式会社 電気メッキ装置
JP2608485B2 (ja) * 1990-05-30 1997-05-07 富士通株式会社 めっき装置
DE4024576A1 (de) * 1990-08-02 1992-02-06 Bosch Gmbh Robert Vorrichtung zum einseitigen aetzen einer halbleiterscheibe
JPH04186630A (ja) * 1990-11-19 1992-07-03 Oki Electric Ind Co Ltd 半導体ウエハのバンプ電極めっき装置
JP2704796B2 (ja) * 1991-04-22 1998-01-26 株式会社東芝 半導体ウェハめっき用治具
JPH05243236A (ja) * 1992-03-03 1993-09-21 Fujitsu Ltd 電気メッキ装置
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US5670034A (en) * 1995-07-11 1997-09-23 American Plating Systems Reciprocating anode electrolytic plating apparatus and method
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US5980706A (en) * 1996-07-15 1999-11-09 Semitool, Inc. Electrode semiconductor workpiece holder
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3627884B2 (ja) * 1996-10-17 2005-03-09 株式会社デンソー メッキ装置

Also Published As

Publication number Publication date
WO2000033356A2 (en) 2000-06-08
IL143316A0 (en) 2002-04-21
WO2000033356A9 (en) 2001-08-02
KR100562011B1 (ko) 2006-03-22
WO2000033356A3 (en) 2001-07-12
IL143316A (en) 2005-03-20
KR20010086051A (ko) 2001-09-07
JP2002531702A (ja) 2002-09-24
CN1346510A (zh) 2002-04-24
AU3105400A (en) 2000-06-19
EP1133786A2 (en) 2001-09-19
CN100382235C (zh) 2008-04-16
TW430919B (en) 2001-04-21
KR100516776B1 (ko) 2005-09-26
KR100503553B1 (ko) 2005-07-26
CN1632914A (zh) 2005-06-29
CA2352160A1 (en) 2000-06-08
KR20040070317A (ko) 2004-08-06
JP2007119923A (ja) 2007-05-17
KR20050013179A (ko) 2005-02-02

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