CN104465481A - 晶圆夹盘 - Google Patents

晶圆夹盘 Download PDF

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CN104465481A
CN104465481A CN201310436832.3A CN201310436832A CN104465481A CN 104465481 A CN104465481 A CN 104465481A CN 201310436832 A CN201310436832 A CN 201310436832A CN 104465481 A CN104465481 A CN 104465481A
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current vortex
metal film
vortex sensor
wafer
chuck body
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王坚
杨贵璞
王晖
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ACM (SHANGHAI) Inc
ACM Research Shanghai Inc
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ACM (SHANGHAI) Inc
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    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract

本发明揭示了一种晶圆夹盘，包括：夹盘本体、支撑轴及金属膜厚度测量装置。夹盘本体具有承载晶圆的正面和与正面相对的背面，夹盘本体开设有至少一个安装孔。支撑轴与夹盘本体的背面固定连接，支撑轴旋转带动夹盘本体旋转。金属膜厚度测量装置测量晶圆上金属膜的厚度，金属膜厚度测量装置包括至少一个电涡流传感器，电涡流传感器安装于夹盘本体的安装孔内。支撑轴上设有两个间隔一定距离的导电环，支撑轴的一侧设置有止挡件，两个石墨棒夹持于止挡件与导电环之间，每个石墨棒的一端抵接于一导电环，该石墨棒的另一端与止挡件相连接，电涡流传感器分别与两个导电环电连接，两个导电环分别与各自相对应的石墨棒电连接。

Description

晶圆夹盘
技术领域
本发明涉及半导体器件制造装置，尤其涉及一种能实时测量金属膜厚度的晶圆夹盘。
背景技术
金属膜厚度测量在半导体器件制造过程中的作用不容忽视，随着半导体技术的快速发展，对半导体器件的质量和性能的要求越来越高，任何一道工序掌控不好，都有可能导致半导体器件的报废或质量和性能降低，例如，在金属沉积过程中，如果不能实时测量金属膜厚度，致使沉积的金属膜厚度过厚，有可能会出现金属膜脱层的现象。再例如，在电化学抛光过程中，如果不能实时测量金属膜厚度，使得电化学抛光后余留的金属膜厚度仍较厚，后续再采用化学机械研磨去除余留的金属膜时，化学机械研磨的时间会较长，化学机械研磨产生的机械应力容易造成介质层的损伤。
然而，现有的金属膜厚度基本上无法做到在线实时测量，通常需等金属沉积工艺或电化学抛光工艺完成后，再对金属膜厚度进行测量，较为常用的是采用四探针法测量金属膜厚度。这种测量方式既无法保证工艺精度，也会使半导体器件制造工艺变得繁琐，降低了半导体器件制造效率。
发明内容
本发明的目的在于提供一种晶圆夹盘，该晶圆夹盘能在线实时测量晶圆上金属膜的厚度。
为实现上述目的，本发明提出的晶圆夹盘，包括：夹盘本体、支撑轴及金属膜厚度测量装置。夹盘本体具有承载晶圆的正面和与正面相对的背面，夹盘本体开设有至少一个安装孔。支撑轴与夹盘本体的背面固定连接，支撑轴旋转带动夹盘本体旋转。金属膜厚度测量装置测量晶圆上金属膜的厚度，金属膜厚度测量装置包括至少一个电涡流传感器，电涡流传感器安装于夹盘本体的安装孔内。支撑轴上设有两个间隔一定距离的导电环，支撑轴的一侧设置有止挡件，两个石墨棒夹持于止挡件与导电环之间，每个石墨棒的一端抵接于一导电环，该石墨棒的另一端与止挡件相连接，电涡流传感器分别与两个导电环电连接，两个导电环分别与各自相对应的石墨棒电连接。
支撑轴的材料为导体材料，支撑轴的外围包裹有绝缘环，绝缘环上套设有两个间隔一定距离的导电环。或者，支撑轴的材料为非导体材料，支撑轴上套设有两个间隔一定距离的导电环。
止挡件包括挡板，挡板与支撑轴相对的一侧连接有两个弹簧，每个石墨棒的一端抵接于一导电环，该石墨棒的另一端与一相对应的弹簧连接。
金属膜厚度测量装置还包括：测力装置、信号处理装置及信号采集装置，测力装置与两个石墨棒电连接，测力装置测量电涡流传感器受到的金属膜的电磁力的大小，信号处理装置与两个石墨棒电连接，信号处理装置向电涡流传感器输入特定频率的交流电，信号处理装置还与测力装置相连，用来获取测力装置所测量到的电磁力信号，并把电磁力信号转换为模拟电信号，信号采集装置与信号处理装置相连，信号采集装置将模拟电信号转换为数字信号用以得到电涡流传感器受到的电磁力的测量值。
电涡流传感器的数量为1个，夹盘本体上与电涡流传感器相对称的位置设置有重量与电涡流传感器相同的传感器模型。或者，电涡流传感器的数量为两个或两个以上，两个或两个以上的电涡流传感器对称分布在夹盘本体上。
本发明通过将金属膜厚度测量装置集成于晶圆夹盘上，晶圆夹盘夹持晶圆进行工艺加工时，可以在线实时测量晶圆上金属膜的厚度。与传统金属膜厚度测量装置相比，本发明在线实时测量金属膜厚度，既提高了工艺加工精度，同时也大大提高了工艺加工效率。
附图说明
图1揭示了根据本发明一实施例的晶圆夹盘的正视图。
图2揭示了根据本发明一实施例的晶圆夹盘的剖面结构示意图。
图3揭示了根据本发明又一实施例的晶圆夹盘的剖面结构示意图。
图4揭示了根据本发明又一实施例的晶圆夹盘的正视图。
图5揭示了根据本发明又一实施例的晶圆夹盘的正视图。
具体实施方式
为详细说明本发明的技术内容、构造特征、所达成目的及功效，下面将结合实施例并配合图式予以详细说明。
参阅图1和图2，揭示了根据本发明一实施例的晶圆夹盘100的正视图和剖面结构示意图。该晶圆夹盘100包括夹盘本体102、支撑轴104及金属膜厚度测量装置。夹盘本体102具有承载晶圆126的正面和与正面相对的背面，夹盘本体102开设有安装孔，该安装孔为贯穿夹盘本体102正面的通孔。支撑轴104与夹盘本体102的背面的中心固定连接，支撑轴104在一驱动装置的驱动下绕晶圆夹盘100的中心轴旋转，支撑轴104旋转的同时带动夹盘本体102旋转。金属膜厚度测量装置测量晶圆126上金属膜的厚度，金属膜厚度测量装置包括电涡流传感器106，电涡流传感器106安装在夹盘本体102的安装孔内。为了平衡夹盘本体102，避免由于电涡流传感器106的重量引起夹盘本体102的倾斜，夹盘本体102上与电涡流传感器106相对称的位置设置有重量与电涡流传感器106相同的传感器模型124。
根据不同的工艺需求，支撑轴104的材料可以选用导体或非导体材料，例如，该晶圆夹盘100用于电化学抛光时，该晶圆夹盘100选用真空夹盘，支撑轴104的材料选用导体材料。当支撑轴104的材料选用导体材料时，如图2所示，支撑轴104的外围包裹有绝缘环108，绝缘环108上套设有两个间隔一定距离的导电环110，该导电环110优选为金属银环。支撑轴104的一侧设置有止挡件114，止挡件114包括挡板，挡板与支撑轴104相对的一侧连接有两个弹簧。两个石墨棒112夹持于止挡件114与导电环110之间，每个石墨棒112的一端抵接于一导电环110，该石墨棒112的另一端与止挡件114相连接，具体地，该石墨棒112的另一端连接于一相对应的弹簧。本发明选用石墨棒112的优点在于，一方面石墨棒112可以与导电环110电导通，另一方面石墨棒112与导电环110之间的摩擦力很小，当支撑轴104旋转并带动导电环110转动时，石墨棒112与导电环110之间因摩擦力很小，因此产生的摩擦热很小，不会影响电涡流传感器106的测量精度。当支撑轴104的材料选用非导体材料时，绝缘环108可以不再需要，而直接将导电环110套设于支撑轴104上，其他结构均与支撑轴104的材料为导体材料时的结构一致。
为了测量晶圆126上金属膜厚度，金属膜厚度测量装置还包括测力装置116、信号处理装置118及信号采集装置120。电涡流传感器106分别与两个导电环110电连接，两个导电环110分别与相对应的石墨棒112电连接。测力装置116与两个石墨棒112电连接，用于测量电涡流传感器106受到的金属膜的电磁力的大小。信号处理装置118与两个石墨棒112电连接，用于向电涡流传感器106输入特定频率的交流电，信号处理装置118还与测力装置116相连，用于获得测力装置116测量的电磁力信号，并将测量的电磁力信号转换为模拟电信号。信号采集装置120与信号处理装置118相连，用于采集信号处理装置118提供的模拟电信号并将模拟电信号转换为数字信号以便得到电涡流传感器106受到的电磁力的测量值。本发明通过设置导电环110及石墨棒112，可以避免晶圆夹盘100旋转过程中金属膜厚度测量装置的连接线扭绞在一起。
晶圆夹盘100可以为真空夹盘或非真空的普通夹盘。当晶圆夹盘100为真空夹盘时，在电涡流传感器106与安装孔之间设置有密封圈128以密封夹盘本体102的安装孔，防止通过安装孔漏气，如图2所示。
以电化学抛光为例，下面详细说明本发明晶圆夹盘100的使用原理。电化学抛光所使用的晶圆夹盘100通常为真空夹盘。在电化学抛光工艺开始之前，先通过实验建立金属膜厚度与电涡流传感器106受到的电磁力的关系。具体方法如下：首先将已知金属膜厚度的晶圆吸附于晶圆夹盘100的夹盘本体102上，金属膜背对着电涡流传感器106。然后向电涡流传感器106输入特定频率的交流电，目的是在电涡流传感器106的周围产生源电磁场，由于源电磁场的作用，金属膜中会产生感应电涡流，并且伴随产生相应的感应电磁场，由于源电磁场和感应电磁场的相互作用，以及金属膜和电涡流传感器106中电流流动，因此在电涡流传感器106和金属膜之间就会产生相互作用的电磁力。然后利用测力装置116测量电涡流传感器106受到的金属膜的电磁力的大小。其中，电涡流传感器106受到的金属膜的电磁力与金属膜受到的电涡流传感器106的电磁力大小相等且方向相反。由此可以利用电涡流传感器106受到的金属膜的电磁力的大小来表征金属膜的厚度。然后利用信号处理装置118获得测力装置116测量的电磁力信号，并将测量的电磁力信号转换为模拟电信号。最后利用信号采集装置120采集信号处理装置118提供的模拟电信号并将模拟电信号转换为数字信号以便得到电涡流传感器106受到的金属膜的电磁力的测量值。
选取多个具有不同金属膜厚度的晶圆，重复上述步骤，以便得到电涡流传感器106受到的不同厚度的金属膜的电磁力，然后建立金属膜厚度与电涡流传感器106受到的金属膜的电磁力的关系。上述方法可参阅中国专利申请CN201210004915.0，该专利申请所揭示的方法适用于此。
金属膜厚度与电涡流传感器106受到的金属膜的电磁力的关系建立后，接下来便可以进行电化学抛光工艺。首先将待抛光晶圆吸附于晶圆夹盘100的夹盘本体102上，待抛光的金属膜背对着电涡流传感器106，然后晶圆夹盘100带动待抛光晶圆旋转，同时向待抛光的金属膜喷射电解液，通过实时测量电涡流传感器106受到的金属膜的电磁力，然后根据金属膜厚度与电涡流传感器106受到的金属膜的电磁力的关系即可得到晶圆上与电涡流传感器106相对应的位置处的金属膜厚度值，一旦该金属膜厚度值等于或近似于设定的目标厚度值时，电化学抛光工艺即可停止。
如图3所示，揭示了根据本发明又一实施例的晶圆夹盘200的剖面结构示意图。该晶圆夹盘200包括夹盘本体202、支撑轴204及金属膜厚度测量装置。夹盘本体202具有承载晶圆226的正面和与正面相对的背面，夹盘本体202开设有安装孔，该安装孔为盲孔。支撑轴204与夹盘本体202的背面的中心固定连接，支撑轴204在一驱动装置的驱动下绕晶圆夹盘200的中心轴旋转，支撑轴204旋转的同时带动夹盘本体202旋转。金属膜厚度测量装置测量晶圆226上金属膜的厚度，金属膜厚度测量装置包括电涡流传感器206，电涡流传感器206安装在夹盘本体202的安装孔内。为了平衡夹盘本体202，避免由于电涡流传感器206的重量引起夹盘本体202的倾斜，夹盘本体202上与电涡流传感器206相对称的位置设置有重量与电涡流传感器206相同的传感器模型224。
根据不同的工艺需求，支撑轴204的材料可以选用导体或非导体材料。当支撑轴204的材料选用导体材料时，支撑轴204的外围包裹有绝缘环208，绝缘环208上套设有两个间隔一定距离的导电环210，该导电环210优选为金属银环。支撑轴204的一侧设置有止挡件214，止挡件214包括挡板，挡板与支撑轴204相对的一侧连接有两个弹簧。两个石墨棒212夹持于止挡件214与导电环210之间，每个石墨棒212的一端抵接于一导电环210，该石墨棒212的另一端与止挡件214相连接，具体地，该石墨棒212的另一端连接于一相对应的弹簧。本发明选用石墨棒212的优点在于，一方面石墨棒212可以与导电环210电导通，另一方面石墨棒212与导电环210之间的摩擦力很小，当支撑轴204旋转并带动导电环210转动时，石墨棒212与导电环210之间因摩擦力很小，因此产生的摩擦热很小，不会影响电涡流传感器206的测量精度。当支撑轴204的材料选用非导体材料时，绝缘环208可以不再需要，而直接将导电环210套设于支撑轴204上，其他结构均与支撑轴204的材料为导体材料时的结构一致。
为了测量晶圆226上金属膜厚度，金属膜厚度测量装置还包括测力装置216、信号处理装置218及信号采集装置220。电涡流传感器206分别与两个导电环210电连接，两个导电环210分别与相对应的石墨棒212电连接。测力装置216与两个石墨棒212电连接，用于测量电涡流传感器206受到的金属膜的电磁力的大小。信号处理装置218与两个石墨棒212电连接，用于向电涡流传感器206输入特定频率的交流电，信号处理装置218还与测力装置216相连，用于获得测力装置216测量的电磁力信号，并将测量的电磁力信号转换为模拟电信号。信号采集装置220与信号处理装置218相连，用于采集信号处理装置218提供的模拟电信号并将模拟电信号转换为数字信号以便得到电涡流传感器206受到的金属膜的电磁力的测量值。
本实施例的晶圆夹盘200与晶圆夹盘100相比，其区别在于本实施例的夹盘本体202上用于安装电涡流传感器206的安装孔为盲孔，由于该安装孔未贯穿夹盘本体202的正面，因此本实施例无需使用密封圈。
夹盘本体上安装的电涡流传感器的数量不限于一个，如图4和图5所示，其中，图4揭示了根据本发明又一实施例的晶圆夹盘300的正视图，在该实施例中，晶圆夹盘300的夹盘本体302上安装有两个电涡流传感器306，该两个电涡流传感器306对称分布在夹盘本体302上。图5揭示了根据本发明又一实施例的晶圆夹盘400的正视图。在该实施例中，晶圆夹盘400的夹盘本体402上安装有三个电涡流传感器406，该三个电涡流传感器406对称分布在夹盘本体402上。在夹盘本体上安装多个电涡流传感器的目的在于测量晶圆上多个位置处的金属膜厚度。
本发明通过将电涡流传感器集成于晶圆夹盘上，晶圆夹盘夹持晶圆进行工艺加工时，可以在线实时测量晶圆上金属膜的厚度。与传统金属膜厚度测量装置相比，本发明在线实时测量金属膜厚度，既提高了工艺加工精度，同时也大大提高了工艺加工效率。
综上所述，本发明通过上述实施方式及相关图式说明，己具体、详实的揭露了相关技术，使本领域的技术人员可以据以实施。而以上所述实施例只是用来说明本发明，而不是用来限制本发明的，本发明的权利范围，应由本发明的权利要求来界定。至于本文中所述元件数目的改变或等效元件的代替等仍都应属于本发明的权利范围。

Claims (12)

1.一种晶圆夹盘，其特征在于，包括：
夹盘本体，所述夹盘本体具有承载晶圆的正面和与正面相对的背面，夹盘本体开设有至少一个安装孔；
支撑轴，所述支撑轴与夹盘本体的背面固定连接，支撑轴旋转带动夹盘本体旋转；及
金属膜厚度测量装置，所述金属膜厚度测量装置测量晶圆上金属膜的厚度，金属膜厚度测量装置包括至少一个电涡流传感器，电涡流传感器安装于夹盘本体的安装孔内；
其中所述支撑轴上设有两个间隔一定距离的导电环，支撑轴的一侧设置有止挡件，两个石墨棒夹持于止挡件与导电环之间，每个石墨棒的一端抵接于一导电环，该石墨棒的另一端与止挡件相连接，所述电涡流传感器分别与两个导电环电连接，两个导电环分别与各自相对应的石墨棒电连接。
2.根据权利要求1所述的晶圆夹盘，其特征在于，所述支撑轴的材料为导体材料，支撑轴的外围包裹有绝缘环，绝缘环上套设有两个间隔一定距离的导电环。
3.根据权利要求1所述的晶圆夹盘，其特征在于，所述支撑轴的材料为非导体材料，支撑轴上套设有两个间隔一定距离的导电环。
4.根据权利要求2或3所述的晶圆夹盘，其特征在于，所述止挡件包括挡板，挡板与支撑轴相对的一侧连接有两个弹簧，每个石墨棒的一端抵接于一导电环，该石墨棒的另一端与一相对应的弹簧连接。
5.根据权利要求2或3所述的晶圆夹盘，其特征在于，所述导电环为金属银环。
6.根据权利要求2或3所述的晶圆夹盘，其特征在于，所述金属膜厚度测量装置还包括：测力装置、信号处理装置及信号采集装置，测力装置与两个石墨棒电连接，测力装置测量电涡流传感器受到的金属膜的电磁力的大小，信号处理装置与两个石墨棒电连接，信号处理装置向电涡流传感器输入特定频率的交流电，信号处理装置还与测力装置相连，用来获取测力装置所测量到的电磁力信号，并把电磁力信号转换为模拟电信号，信号采集装置与信号处理装置相连，信号采集装置将模拟电信号转换为数字信号用以得到电涡流传感器受到的电磁力的测量值。
7.根据权利要求1所述的晶圆夹盘，其特征在于，所述安装孔为贯穿夹盘本体正面的通孔。
8.根据权利要求7所述的晶圆夹盘，其特征在于，所述电涡流传感器与安装孔之间设置有密封圈。
9.根据权利要求1所述的晶圆夹盘，其特征在于，所述安装孔为盲孔。
10.根据权利要求1所述的晶圆夹盘，其特征在于，所述电涡流传感器的数量为1个，夹盘本体上与电涡流传感器相对称的位置设置有重量与电涡流传感器相同的传感器模型。
11.根据权利要求1所述的晶圆夹盘，其特征在于，所述电涡流传感器的数量为两个或两个以上，两个或两个以上的电涡流传感器对称分布在夹盘本体上。
12.根据权利要求1所述的晶圆夹盘，其特征在于，所述晶圆夹盘为真空夹盘。
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