CN1190251A - 半导体器件铂膜的刻蚀方法 - Google Patents
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
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- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
本文提出了一种改进作为半导体器件存储节点的铂膜刻蚀倾角的方法。采用该方法,在含有氧气的刻蚀气体刻蚀下,铂膜上含有钛的粘附层转变成TiOx,阻止了进一步刻蚀。在预定温度如120~300℃下,TiOx可以防止腐蚀粘附层掩模。基于以上事实,过刻蚀铂膜可以改善铂膜刻蚀倾角。
Description
本发明涉及半导体存储器件的制造方法,确切地说,是涉及刻蚀铂膜的方法,该铂膜用于制造半导体存储器件电容器的存储节点。
通常,随着半导体存储器件集成度的提高,半导体存储器件如动态随机存取存储器(DRAM)需要一个大容量电容器,同时还要求电容器的面积小。因此开发了槽式或柱式电容器。但是,槽式或柱式电容器的制造工艺复杂而且难以正确制作。因此,集成半导体存储器件所需的大容量和高集成度是互相制约的。
为了解决以上问题,现在广泛采用钛酸锶钡(BST)作为电介质来制造电容器。BST与常规电介质相比具有更高的介电常数。电容器通常采用具有高介电常数的材料如BST来制造,铂膜是通常所采用的电容器极板和存储节点。这是因为铂是稳定的材料,在形成BST绝缘膜的高温热处理过程中在介质表面不易氧化。并且,与其他导电膜如铱、钌和多晶硅相比,铂具有良好的导电性以及电容器的介质电极间的泄漏电流小。但是,采用干法刻蚀难以形成铂图形。这是因为铂是稳定的金属,不易与其它化学物质发生反应。在反应离子刻蚀(RIE)中通常采用卤族元素刻蚀铂膜,但是卤族元素与铂离子反应很弱,所以铂膜不是由于化学反应而是因为物理溅射的作用而被刻掉的。铂膜由于离子的溅射作用被刻蚀的同时产生了残留物,该残留物降低了铂膜的刻蚀倾角。因此铂电极不会有理想的图形。并且,为了提高在反应离子刻蚀中过低的刻蚀速率,刻蚀气体多含有氯或氟。
常规铂膜刻蚀方法采用氯气作为刻蚀气体,该方法见于美国专利No.5,515,984“铂膜刻蚀方法”,专利签发日期为1996年5月14日。该专利中采用氯气和氧气作为刻蚀气体,因此在刻蚀阻挡层的侧墙上形成了刻蚀残留物PtCl和PtO,这样由刻蚀阻挡层和刻蚀残留物共同组成了刻蚀掩模来刻掉铂膜。刻蚀残留物将由湿法刻蚀去除。
但是,刻蚀残留物需要采用适当的方法去除,并且铂膜的刻蚀倾角需要进一步提高。
为了解决以上问题,本发明的目的之一是提供一种刻蚀半导体器件的铂膜的方法,该器件中在半导体衬底上形成铂膜,器件被加热到预定的温度以过刻蚀铂膜,在铂膜上采用含有钛的粘附层作为刻蚀掩模,这样将改善铂膜侧墙的刻蚀倾角。
为了达到上述目的,采用该方法刻蚀半导体器件的铂膜,先在衬底上形成底层,再依次形成阻挡层、铂膜、含有钛的粘附层和掩模。在掩模层上形成掩模图形,再利用掩模图形图形化粘附层。同时,采用氩气/氯气作为刻蚀气体,采用干法刻蚀形成图形。然后在没有活性等离子体的情况下将所得结构加热到120~300℃。然后采用在半导体衬底上形成图形的掩模层和粘附层刻蚀铂膜,铂膜上的掩模图形将采用过刻蚀去除。
掩模层最好由包括氧化层的一层或多层构成。同样,粘附层最好含有钛,阻挡层最好由TiN组成或由含有TiN的材料组成。底层包括在半导体衬底上形成的有接触孔的隔离层。每一个接触孔中都埋有多晶硅塞。铂膜图形化采用氧气/氯气,氧气/溴化氢,氧气/溴气或氧气/Br作为刻蚀气体。
图形化铂膜时最好采用磁增强反应离子刻蚀(MERIE)法,采用氧气/氯气作为刻蚀气体,其中氧气的组份为50%或更高。
过刻蚀去除掩模图形通过延长0.5~1.5倍的刻蚀时间来实现。该刻蚀时间为刻蚀铂膜到终点的时间,粘附层和阻挡层采用氩气/氯气作为刻蚀气体来图形化。
在本发明中,铂膜形成于半导体衬底上,衬底被加热到预定温度以过刻蚀铂膜,在铂膜上采用含有钛的粘附层作为刻蚀掩模,因此改进了铂膜侧墙的刻蚀倾角。
通过参照附图对本发明优选实施例的详细描述,本发明的上述目的和优点将更为明显:
图1到5是本发明刻蚀半导体器件铂膜方法的剖面图。
本发明中的掩模层不必只有一层。比如氧化层掩模由多层组成,其中包括氧化层。
图1中,在半导体衬底100上形成了底层,在其中形成了如晶体管(未画出)的底层结构。底层是在半导体衬底100上堆叠第一绝缘层,如绝缘介质层102,然后图形化形成接触孔,再在接触孔中埋入多晶硅塞104得到的层。接着,通过平坦化工艺如深刻蚀或化学机械抛光底层所得结构使半导体衬底表面平坦。为了防止由于多晶硅塞104和铂膜108之间的互扩散而导致电容器性能下降,在平坦化后所得结构的整个表面上形成了阻挡层106。阻挡层106厚度为300~700埃,采用TiN或含有TiN的材料。随后采用通常所用的方法如溅射或化学汽相淀积(CVD)在阻挡层106上淀积铂膜108。在本发明的实施例中,铂膜108是导电层,其厚度为2000±500埃,作为半导体存储器件的电容器存储节点。
图2中,为了提高掩模层和铂膜108的粘附性,在形成铂膜108的所得结构上形成了钛粘附层。在本实施例中,粘附层的厚度为400~800埃。随后在粘附层上形成5000±1000埃的掩模层,该掩模层为氧化层。掩模层上覆盖着光刻胶,采用通常的光刻工艺形成掩模图形112。本实施例中的掩模层为氧化层,它可以是包括氧化层的复合层。利用掩模图形112作为刻蚀掩模形成粘附层掩模图形110,其与掩模图形112相接触。粘附层通过干法刻蚀形成图形,如磁增强反应离子刻蚀(MERIE),该刻蚀采用氩气/氯气作为刻蚀气体。
图3中,在形成掩模层图形112和粘附层掩模图形110之后,其被置于磁增强反应离子刻蚀设备中,在没有活性等离子体的情况下加热到120~300℃。随后采用掩模层图形112和粘附层掩模图形110作为掩模,采用含有氧气的混合气体即氯气/氧气,溴化氢,溴气或溴作为刻蚀气体,刻蚀铂膜108,直到铂膜下的阻挡层106暴露出来为止。此时混合气体中,氧气的比例最好至少为50%。在本实施例中,氧气和氯气的比例为4∶1。氧离子和原子团溅射铂膜。
同时,氧气也提高了铂膜108相对于由氧化层组成的掩模图形112的刻蚀选择比,并且使由钛膜构成的粘附层掩模图形110变成TiOx。在刻蚀铂膜的过程中,TiOx可以被看作附加的刻蚀掩模图形。这就是说,部分氧离子和原子团使部分Ti氧化成TiOx,降低了对掩模的腐蚀速率。
在与图3相同的刻蚀条件下,过刻蚀铂膜108得到铂膜108A,铂膜108A具有较好的刻蚀倾角,图4A是其剖面图。在过刻蚀中掩模图形112被完全去除。此时,最好将刻蚀时间延长为暴露出阻挡层106即图3的刻蚀终点所需的刻蚀时间的0.5~1.5倍来控制。当采用氧气/氯气/氩气作为刻蚀气体时,0.58μm的间距厚度为2000埃的铂膜108其刻蚀倾角为65°或更小。这是因为铂与氧气和氯气不反应。但是当采用含有很多氧气的刻蚀气体刻蚀铂膜108A时,铂膜上由钛组成的粘附层掩模图形110氧化成TiOx,TiOx与由氧化层组成的掩模图形112一起构成了附加掩模图形。在120~300℃的高温下,TiOx的粘附层掩模图形110被腐蚀成与在室温下相同的程度。高温将加速Ti的氧化,这样由于氧离子或氧原子团溅射导致的腐蚀将相对减弱,因此高温下掩模图形将不会被损坏。粘附层掩模图形几乎没有损坏可以看作提高铂膜108A刻蚀倾角的一个因素。在低于120℃的温度下过刻蚀,由于溅射的作用,含有Ti的粘附层掩模图形110A从边缘开始被迅速腐蚀。但是,在160℃或更高的温度下过刻蚀,即使掩模图形112被完全去除,粘附层掩模图形110A也不会被腐蚀,因此铂膜108A的侧墙刻蚀倾角几乎是垂直的。这时,与在低于120℃的温度下刻蚀粘附层图形相比,粘附层图形110A中的Ti更加迅速地氧化成TiOx。当磁增强反应离子刻蚀的反应室的温度设置为160℃,而半导体衬底表面温度设置为140℃时,铂膜108A的刻蚀倾角θ1接近80°。温度120~300℃指的是半导体衬底表面温度。根据本发明,过刻蚀铂膜108A和控制刻蚀温度将有助于改进铂膜的刻蚀倾角。
与图4A相比,图4B是在120℃或更低的温度下刻蚀后半导体衬底的剖面图。这时,掩模图形112被腐蚀去除,粘附层掩模图形110B的边缘也被腐蚀,这就导致了侧墙倾角接近45℃。这样,在用溅射刻蚀铂膜时,粘附层掩模图形110B不能改善刻蚀倾角。比如,当过刻蚀时反应室的温度为130℃,而半导体衬底表面温度为120℃时,铂膜108B的刻蚀倾角θ2仅为72°或更少。
图5是半导体衬底经过掩模图形过刻蚀及去除铂膜108A上的粘附层掩模图形后,图形化铂膜108A下的阻挡层106的剖面图。在去除粘附层掩模图形110A和图形化阻挡层106A时,采用氩气/氯气作为刻蚀气体。至此,刻蚀包括多晶硅塞104上阻挡层106A的铂膜108A全部完成。
实例:刻蚀温度和铂膜刻蚀倾角的关系
在刻蚀反应室温度为100℃、130℃和160℃时分别过刻蚀铂膜,然后测量铂膜侧墙刻蚀倾角。铂膜厚度2000埃,位于铂膜上的粘附层厚度为600埃,由氧化层构成的掩模图形厚度为5000埃。其结果为:当刻蚀反应室的温度为100℃、130℃和160℃时,铂膜侧墙刻蚀倾角分别为71°、72°和80°。其中,当刻蚀反应室的温度为100℃和130℃时,刻蚀倾角并没有明显改善。但是当刻蚀反应室的温度为160℃时,铂膜侧墙刻蚀倾角明显改善。
其原因为,刻蚀反应室温度为100℃时过刻蚀,由氧化层组成的掩模图形被腐蚀去掉,接着在掩模图形下变为Ti或TiOx的粘附层边缘被腐蚀,因此粘附层中心的厚度为600埃,这导致了粘附层侧墙刻蚀倾角接近45°。同样,反应室温度为130℃时过刻蚀,虽然铂膜上粘附层中心的厚度为600埃,但是其边缘厚度为400埃。粘附层被腐蚀得太多而无法改善刻蚀倾角。
但是当刻蚀反应室的温度设置为160℃,半导体衬底表面温度为140℃时,即使最上层的掩模图形完全被腐蚀,下面的粘附层也不会被腐蚀。这样,粘附层中心和边缘的厚度均为600埃,侧墙接近于垂直。因此,在各向异性刻蚀中通过溅射防止铂膜因铂原子损失刻蚀倾角是可能的。
在上述条件下刻蚀时,刻蚀速率分别为100℃时,395埃/分钟,130℃时,368埃/分钟,160℃时,371埃/分钟。当在铂膜的侧墙上形成新的挥发性化合物时,有助于改善刻蚀倾角,随着温度的增加,刻蚀速率也将加快。但是所有温度下得到的刻蚀速率非常接近。铂膜侧墙的刻蚀速率不会因铂膜产生化学反应而得到提高。
根据本发明,作为电容器存储节点和极板的铂膜刻蚀倾角是可以改善的,其所依据的事实是:作为刻蚀铂膜的附加掩模的粘附层的刻蚀倾角度随着温度的变化而变化。
本发明不仅局限于上述实施例是显而易见的,专业人士可以在本发明范围内进行改进。
Claims (17)
1一种刻蚀半导体器件铂膜的方法,包括以下步骤:
在形成底层的半导体衬底上生成铂膜;
在铂膜上形成粘附层;
在粘附层上形成掩模层;
图形化掩模层形成掩模图形;
利用掩模图形图形化粘附层;
在等离子体刻蚀设备中加热半导体衬底;
利用掩模图形和粘附层图形刻蚀铂膜;以及
去除掩模图形。
2根据权利要求1所述的方法,在形成铂膜之前,在底层上形成阻挡层。
3根据权利要求2所述的方法,阻挡层采用TiN或含有TiN的材料形成。
4根据权利要求1所述的方法,粘附层采用钛形成。
5根据权利要求1所述的方法,掩模层包括一层或多层。
6根据权利要求5所述的方法,一层或多层中包括一层或多层氧化层。
7根据权利要求1所述的方法,在加热半导体衬底时,不激活等离子体。
8根据权利要求1所述的方法,半导体衬底被加热到120~300℃。
9根据权利要求1所述的方法,刻蚀铂膜采用含有氧气的刻蚀气体。
10根据权利要求9所述的方法,含有氧气的刻蚀气体是氧气/氯气。
11根据权利要求10所述的方法,刻蚀气体氧气/氯气中氧气至少占50%。
12根据权利要求9所述的方法,含有氧气的刻蚀气体可以采用溴化氢、溴气和溴等代替氯气。
13根据权利要求12所述的方法,刻蚀气体氧气/溴中氧气至少占50%。
14根据权利要求1所述的方法,掩模图形通过刻蚀铂膜后的过刻蚀去除。
15根据权利要求14所述的方法,过刻蚀通过将刻蚀铂膜达到终点所需的时间延长0.5~1.5倍来进行。
16根据权利要求2所述的方法,去除掩模图形后图形化阻挡层。
17根据权利要求16所述的方法,以氩气/氯气作为刻蚀气体,采用干法图形化阻挡层。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100430920C (zh) * | 2001-08-29 | 2008-11-05 | 日本电气株式会社 | 代理内容服务器、互联网业务供应系统和访问内容服务器的方法 |
CN107424923A (zh) * | 2017-07-06 | 2017-12-01 | 鲁汶仪器有限公司(比利时) | 一种自限制精确刻蚀硅的方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6063710A (en) * | 1996-02-26 | 2000-05-16 | Sony Corporation | Method and apparatus for dry etching with temperature control |
EP0865079A3 (en) | 1997-03-13 | 1999-10-20 | Applied Materials, Inc. | A method for removing redeposited veils from etched platinum surfaces |
DE19728474A1 (de) * | 1997-07-03 | 1999-01-07 | Siemens Ag | Elektrodenanordnung |
US6919168B2 (en) | 1998-01-13 | 2005-07-19 | Applied Materials, Inc. | Masking methods and etching sequences for patterning electrodes of high density RAM capacitors |
US6265318B1 (en) | 1998-01-13 | 2001-07-24 | Applied Materials, Inc. | Iridium etchant methods for anisotropic profile |
KR20010034127A (ko) | 1998-01-13 | 2001-04-25 | 조셉 제이. 스위니 | 이방성 플라티늄 프로화일을 위한 에칭 방법 |
US6323132B1 (en) | 1998-01-13 | 2001-11-27 | Applied Materials, Inc. | Etching methods for anisotropic platinum profile |
US6958295B1 (en) * | 1998-01-20 | 2005-10-25 | Tegal Corporation | Method for using a hard mask for critical dimension growth containment |
KR100319879B1 (ko) * | 1998-05-28 | 2002-08-24 | 삼성전자 주식회사 | 백금족금속막식각방법을이용한커패시터의하부전극형성방법 |
JP2000133633A (ja) * | 1998-09-09 | 2000-05-12 | Texas Instr Inc <Ti> | ハ―ドマスクおよびプラズマ活性化エッチャントを使用した材料のエッチング方法 |
KR100756742B1 (ko) * | 1999-02-17 | 2007-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고밀도 ram 커패시터의 전극을 패턴화하기 위한 개선된마스킹 방법 및 에칭 공정 |
JP4865978B2 (ja) * | 2002-02-28 | 2012-02-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
TWI316273B (en) * | 2003-07-24 | 2009-10-21 | Nanya Technology Corp | Method of reworking integrated circuit device |
US7544579B1 (en) | 2005-03-15 | 2009-06-09 | National Semiconductor Corporation | System and method for faceting the corners of a resistor protect layer to reduce vertical step height |
US7585775B1 (en) * | 2005-11-21 | 2009-09-08 | National Semiconductor Corporation | System and method for faceting a masking layer in a plasma etch to slope a feature edge |
US7790531B2 (en) | 2007-12-18 | 2010-09-07 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
US7829428B1 (en) | 2008-08-26 | 2010-11-09 | National Semiconductor Corporation | Method for eliminating a mask layer during thin film resistor manufacturing |
CN102176415B (zh) * | 2011-03-15 | 2016-04-13 | 上海集成电路研发中心有限公司 | 衬底表面处理方法 |
JP5694022B2 (ja) * | 2011-03-22 | 2015-04-01 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
US9799534B1 (en) | 2017-01-04 | 2017-10-24 | International Business Machines Corporation | Application of titanium-oxide as a patterning hardmask |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3951709A (en) * | 1974-02-28 | 1976-04-20 | Lfe Corporation | Process and material for semiconductor photomask fabrication |
US3975252A (en) * | 1975-03-14 | 1976-08-17 | Bell Telephone Laboratories, Incorporated | High-resolution sputter etching |
JP3088178B2 (ja) * | 1991-04-22 | 2000-09-18 | 日本電気株式会社 | ポリシリコン膜のエッチング方法 |
KR0171060B1 (ko) * | 1993-12-28 | 1999-03-30 | 스기야마 카즈히코 | 반도체장치의 제조방법 |
US5413669A (en) * | 1994-02-07 | 1995-05-09 | Applied Materials, Inc. | Metal CVD process with post-deposition removal of alloy produced by CVD process |
MY130503A (en) * | 1994-03-30 | 2007-06-29 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor devices |
JP3122579B2 (ja) * | 1994-07-27 | 2001-01-09 | シャープ株式会社 | Pt膜のエッチング方法 |
US5612606A (en) * | 1994-09-15 | 1997-03-18 | David C. Guimarin | Battery exchange system for electric vehicles |
KR0168346B1 (ko) * | 1994-12-29 | 1998-12-15 | 김광호 | 고유전율 재료를 이용한 커패시터 및 그 제조방법 |
JPH0982687A (ja) * | 1995-09-19 | 1997-03-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
KR100413649B1 (ko) * | 1996-01-26 | 2004-04-28 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치의제조방법 |
US5688718A (en) * | 1997-02-03 | 1997-11-18 | Taiwan Semiconductor Manufacturing Company Ltd | Method of CVD TiN barrier layer integration |
-
1998
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100430920C (zh) * | 2001-08-29 | 2008-11-05 | 日本电气株式会社 | 代理内容服务器、互联网业务供应系统和访问内容服务器的方法 |
CN107424923A (zh) * | 2017-07-06 | 2017-12-01 | 鲁汶仪器有限公司(比利时) | 一种自限制精确刻蚀硅的方法 |
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US6004882A (en) | 1999-12-21 |
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DE69837301D1 (de) | 2007-04-26 |
EP0858103B1 (en) | 2007-03-14 |
EP0858103A3 (en) | 1999-09-15 |
JP3729632B2 (ja) | 2005-12-21 |
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DE69837301T2 (de) | 2007-07-05 |
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