CN118871862A - 曝光方法、器件制造方法、曝光装置、以及曝光系统 - Google Patents

曝光方法、器件制造方法、曝光装置、以及曝光系统 Download PDF

Info

Publication number
CN118871862A
CN118871862A CN202380019504.5A CN202380019504A CN118871862A CN 118871862 A CN118871862 A CN 118871862A CN 202380019504 A CN202380019504 A CN 202380019504A CN 118871862 A CN118871862 A CN 118871862A
Authority
CN
China
Prior art keywords
exposure
pattern
region
exposure pattern
light modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380019504.5A
Other languages
English (en)
Chinese (zh)
Inventor
渡边阳司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN118871862A publication Critical patent/CN118871862A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202380019504.5A 2022-02-17 2023-02-15 曝光方法、器件制造方法、曝光装置、以及曝光系统 Pending CN118871862A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-022940 2022-02-17
JP2022022940 2022-02-17
PCT/JP2023/005314 WO2023157888A1 (ja) 2022-02-17 2023-02-15 露光方法、デバイス製造方法、露光装置、及び露光システム

Publications (1)

Publication Number Publication Date
CN118871862A true CN118871862A (zh) 2024-10-29

Family

ID=87578355

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380019504.5A Pending CN118871862A (zh) 2022-02-17 2023-02-15 曝光方法、器件制造方法、曝光装置、以及曝光系统

Country Status (7)

Country Link
US (1) US20240377754A1 (https=)
EP (1) EP4481498A4 (https=)
JP (1) JPWO2023157888A1 (https=)
KR (1) KR20240135813A (https=)
CN (1) CN118871862A (https=)
TW (1) TW202338519A (https=)
WO (1) WO2023157888A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI873898B (zh) * 2023-10-05 2025-02-21 力晶積成電子製造股份有限公司 用於曝光製程的拼接方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831404B2 (ja) * 1988-02-24 1996-03-27 三菱電機株式会社 半導体装置の製造方法
JPH05136020A (ja) * 1991-11-11 1993-06-01 Fujitsu Ltd 半導体装置の露光方法
JP3198310B2 (ja) 1993-01-06 2001-08-13 株式会社ニコン 露光方法及び装置
US6624433B2 (en) 1994-02-22 2003-09-23 Nikon Corporation Method and apparatus for positioning substrate and the like
JPH07249558A (ja) * 1994-03-09 1995-09-26 Nikon Corp 位置合わせ方法
US5637129A (en) 1995-11-03 1997-06-10 Owens-Brockway Glass Container Inc. Glass melting furnace plunger needle set-up fixture
SE522531C2 (sv) * 1999-11-24 2004-02-17 Micronic Laser Systems Ab Metod och anordning för märkning av halvledare
US20050015608A1 (en) 2003-07-16 2005-01-20 Pkware, Inc. Method for strongly encrypting .ZIP files
JP4266079B2 (ja) * 2001-04-09 2009-05-20 株式会社東芝 原版とその作製方法及びその原版を用いた露光方法
JP2007199711A (ja) * 2005-12-28 2007-08-09 Nikon Corp 露光システム、デバイス製造システム、露光方法及びデバイスの製造方法
JP2008268578A (ja) * 2007-04-20 2008-11-06 Toppan Printing Co Ltd 分割露光装置及び分割露光方法
TWI443472B (zh) 2007-07-13 2014-07-01 尼康股份有限公司 Pattern forming method and apparatus, exposure method and apparatus, and component manufacturing method and element
JP2011181715A (ja) * 2010-03-02 2011-09-15 Nikon Corp 露光装置
JP5703069B2 (ja) * 2010-09-30 2015-04-15 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
KR102552792B1 (ko) 2015-02-23 2023-07-06 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법
JP6664897B2 (ja) 2015-07-22 2020-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP6601173B2 (ja) * 2015-11-12 2019-11-06 ウシオ電機株式会社 露光装置、基板製造システム、露光方法、および基板製造方法
EP3598236A4 (en) 2017-03-16 2021-01-20 Nikon Corporation CONTROL DEVICE AND CONTROL METHOD, EXPOSURE DEVICE AND EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, DATA GENERATING METHOD AND PROGRAM

Also Published As

Publication number Publication date
KR20240135813A (ko) 2024-09-12
EP4481498A4 (en) 2026-04-01
TW202338519A (zh) 2023-10-01
WO2023157888A1 (ja) 2023-08-24
EP4481498A1 (en) 2024-12-25
US20240377754A1 (en) 2024-11-14
JPWO2023157888A1 (https=) 2023-08-24

Similar Documents

Publication Publication Date Title
JP5169786B2 (ja) 露光装置及び露光方法、並びにデバイス製造方法
CN102067038B (zh) 曝光设备、曝光方法以及器件制造方法
JP5489068B2 (ja) 位置計測システム、露光装置、位置計測方法、露光方法及びデバイス製造方法、並びに工具及び計測方法
JP5246488B2 (ja) 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法
JP4006217B2 (ja) 露光方法、露光装置及びデバイスの製造方法
CN102027417A (zh) 可移动体系统、可移动体驱动方法、图案形成设备、图案形成方法、曝光设备、曝光方法以及器件制造方法
KR20110018352A (ko) 노광 장치, 노광 방법, 및 디바이스 제조 방법
JP2013058796A (ja) 露光装置及び露光方法、並びにデバイス製造方法
KR20100057587A (ko) 이동체 구동 방법 및 시스템
KR20230073350A (ko) 이동체의 제어 방법, 노광 방법, 디바이스 제조 방법, 이동체 장치, 및 노광 장치
JP5257832B2 (ja) 較正方法、移動体駆動方法及び移動体駆動装置、露光方法及び露光装置、パターン形成方法及びパターン形成装置、並びにデバイス製造方法
JP2009200122A (ja) 露光装置およびデバイス製造方法
CN118871862A (zh) 曝光方法、器件制造方法、曝光装置、以及曝光系统
JP2010087310A (ja) 露光装置およびデバイス製造方法
KR100898441B1 (ko) 노광장치 및 디바이스의 제조방법
JP2003273011A (ja) リソグラフィ装置、アライメント方法、およびデバイス製造方法
TWI864352B (zh) 測量設備、曝光設備及物品製造方法
JP7538790B2 (ja) 露光装置、露光方法及び物品の製造方法
JP6748907B2 (ja) 計測装置、露光装置、デバイス製造方法、及びパターン形成方法
CN117083571A (zh) 曝光装置、曝光方法、器件制造方法、以及器件
JP2009252994A (ja) 露光方法及びデバイス製造方法、並びに露光装置
JP2007311508A (ja) 微細パターン形成方法及びデバイス製造方法
JP7699458B2 (ja) 露光装置、露光方法及び物品の製造方法
JPWO2007000995A1 (ja) 露光装置及び方法、並びにデバイス製造方法
JP4726232B2 (ja) 露光方法、露光装置及びデバイスの製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination