KR20240135813A - 노광 방법, 디바이스 제조 방법, 노광 장치 및 노광 시스템 - Google Patents

노광 방법, 디바이스 제조 방법, 노광 장치 및 노광 시스템 Download PDF

Info

Publication number
KR20240135813A
KR20240135813A KR1020247027066A KR20247027066A KR20240135813A KR 20240135813 A KR20240135813 A KR 20240135813A KR 1020247027066 A KR1020247027066 A KR 1020247027066A KR 20247027066 A KR20247027066 A KR 20247027066A KR 20240135813 A KR20240135813 A KR 20240135813A
Authority
KR
South Korea
Prior art keywords
exposure
pattern
region
light modulator
spatial light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247027066A
Other languages
English (en)
Korean (ko)
Inventor
요지 와타나베
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20240135813A publication Critical patent/KR20240135813A/ko
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H01L21/4853
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020247027066A 2022-02-17 2023-02-15 노광 방법, 디바이스 제조 방법, 노광 장치 및 노광 시스템 Pending KR20240135813A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-022940 2022-02-17
JP2022022940 2022-02-17
PCT/JP2023/005314 WO2023157888A1 (ja) 2022-02-17 2023-02-15 露光方法、デバイス製造方法、露光装置、及び露光システム

Publications (1)

Publication Number Publication Date
KR20240135813A true KR20240135813A (ko) 2024-09-12

Family

ID=87578355

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247027066A Pending KR20240135813A (ko) 2022-02-17 2023-02-15 노광 방법, 디바이스 제조 방법, 노광 장치 및 노광 시스템

Country Status (7)

Country Link
US (1) US20240377754A1 (https=)
EP (1) EP4481498A4 (https=)
JP (1) JPWO2023157888A1 (https=)
KR (1) KR20240135813A (https=)
CN (1) CN118871862A (https=)
TW (1) TW202338519A (https=)
WO (1) WO2023157888A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI873898B (zh) * 2023-10-05 2025-02-21 力晶積成電子製造股份有限公司 用於曝光製程的拼接方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170023732A1 (en) 2015-07-22 2017-01-26 Renesas Electronics Corporation Semiconductor device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831404B2 (ja) * 1988-02-24 1996-03-27 三菱電機株式会社 半導体装置の製造方法
JPH05136020A (ja) * 1991-11-11 1993-06-01 Fujitsu Ltd 半導体装置の露光方法
JP3198310B2 (ja) 1993-01-06 2001-08-13 株式会社ニコン 露光方法及び装置
US6624433B2 (en) 1994-02-22 2003-09-23 Nikon Corporation Method and apparatus for positioning substrate and the like
JPH07249558A (ja) * 1994-03-09 1995-09-26 Nikon Corp 位置合わせ方法
US5637129A (en) 1995-11-03 1997-06-10 Owens-Brockway Glass Container Inc. Glass melting furnace plunger needle set-up fixture
SE522531C2 (sv) * 1999-11-24 2004-02-17 Micronic Laser Systems Ab Metod och anordning för märkning av halvledare
US20050015608A1 (en) 2003-07-16 2005-01-20 Pkware, Inc. Method for strongly encrypting .ZIP files
JP4266079B2 (ja) * 2001-04-09 2009-05-20 株式会社東芝 原版とその作製方法及びその原版を用いた露光方法
JP2007199711A (ja) * 2005-12-28 2007-08-09 Nikon Corp 露光システム、デバイス製造システム、露光方法及びデバイスの製造方法
JP2008268578A (ja) * 2007-04-20 2008-11-06 Toppan Printing Co Ltd 分割露光装置及び分割露光方法
TWI443472B (zh) 2007-07-13 2014-07-01 尼康股份有限公司 Pattern forming method and apparatus, exposure method and apparatus, and component manufacturing method and element
JP2011181715A (ja) * 2010-03-02 2011-09-15 Nikon Corp 露光装置
JP5703069B2 (ja) * 2010-09-30 2015-04-15 株式会社Screenホールディングス 描画装置および描画方法
KR102552792B1 (ko) 2015-02-23 2023-07-06 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법
JP6601173B2 (ja) * 2015-11-12 2019-11-06 ウシオ電機株式会社 露光装置、基板製造システム、露光方法、および基板製造方法
EP3598236A4 (en) 2017-03-16 2021-01-20 Nikon Corporation CONTROL DEVICE AND CONTROL METHOD, EXPOSURE DEVICE AND EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, DATA GENERATING METHOD AND PROGRAM

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170023732A1 (en) 2015-07-22 2017-01-26 Renesas Electronics Corporation Semiconductor device

Also Published As

Publication number Publication date
EP4481498A4 (en) 2026-04-01
TW202338519A (zh) 2023-10-01
WO2023157888A1 (ja) 2023-08-24
CN118871862A (zh) 2024-10-29
EP4481498A1 (en) 2024-12-25
US20240377754A1 (en) 2024-11-14
JPWO2023157888A1 (https=) 2023-08-24

Similar Documents

Publication Publication Date Title
JP5423863B2 (ja) 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法
JP5177449B2 (ja) 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法
JP5489068B2 (ja) 位置計測システム、露光装置、位置計測方法、露光方法及びデバイス製造方法、並びに工具及び計測方法
US8027020B2 (en) Exposure apparatus, exposure method, and method for producing device
JP5971809B2 (ja) 露光方法及び露光装置、並びにデバイス製造方法
JP5334003B2 (ja) 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、デバイス製造方法、計測方法、並びに位置計測システム
US8164736B2 (en) Exposure method, exposure apparatus, and method for producing device
JPWO2009028157A1 (ja) 移動体駆動方法及び移動体駆動システム、並びにパターン形成方法及びパターン形成装置
JP2009117837A (ja) 移動体装置、パターン形成装置及び露光装置、並びにデバイス製造方法
JP2009124140A (ja) 移動体装置、パターン形成装置及び露光装置、並びにデバイス製造方法
JP2009055031A (ja) 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、デバイス製造方法、並びに処理システム
KR20240135813A (ko) 노광 방법, 디바이스 제조 방법, 노광 장치 및 노광 시스템
KR100898441B1 (ko) 노광장치 및 디바이스의 제조방법
JP6748907B2 (ja) 計測装置、露光装置、デバイス製造方法、及びパターン形成方法
JP5125318B2 (ja) 露光装置及びデバイス製造方法
JP5170824B2 (ja) 露光装置及びデバイス製造方法
JP2009252994A (ja) 露光方法及びデバイス製造方法、並びに露光装置
JP5360453B2 (ja) 計測方法、露光方法及びデバイス製造方法
JP2012089769A (ja) 露光装置及びデバイス製造方法
JP5158330B2 (ja) 露光装置及びデバイス製造方法
JP5077745B2 (ja) 露光装置及びデバイス製造方法
JP5057220B2 (ja) 露光装置及びデバイス製造方法
JP5234486B2 (ja) 露光装置及び露光方法、並びにデバイス製造方法
JP2010067874A (ja) 露光方法及び露光装置、並びにデバイス製造方法
JP2009054738A (ja) 移動体駆動方法及び移動体駆動システム、パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11 Administrative time limit extension requested

Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

T11 Administrative time limit extension requested

Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11 Administrative time limit extension requested

Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11 Administrative time limit extension requested

Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000