CN1183545C - 存储元件装置及其制造方法 - Google Patents

存储元件装置及其制造方法 Download PDF

Info

Publication number
CN1183545C
CN1183545C CNB008068275A CN00806827A CN1183545C CN 1183545 C CN1183545 C CN 1183545C CN B008068275 A CNB008068275 A CN B008068275A CN 00806827 A CN00806827 A CN 00806827A CN 1183545 C CN1183545 C CN 1183545C
Authority
CN
China
Prior art keywords
layer
wire
metallization
wires
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008068275A
Other languages
English (en)
Chinese (zh)
Other versions
CN1349650A (zh
Inventor
S·施瓦茨尔
U·舍勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of CN1349650A publication Critical patent/CN1349650A/zh
Application granted granted Critical
Publication of CN1183545C publication Critical patent/CN1183545C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CNB008068275A 1999-02-26 2000-02-01 存储元件装置及其制造方法 Expired - Fee Related CN1183545C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19908518.8 1999-02-26
DE19908518 1999-02-26

Publications (2)

Publication Number Publication Date
CN1349650A CN1349650A (zh) 2002-05-15
CN1183545C true CN1183545C (zh) 2005-01-05

Family

ID=7899068

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008068275A Expired - Fee Related CN1183545C (zh) 1999-02-26 2000-02-01 存储元件装置及其制造方法

Country Status (8)

Country Link
US (1) US6630703B2 (enExample)
EP (1) EP1157388B1 (enExample)
JP (1) JP4138254B2 (enExample)
KR (1) KR100450468B1 (enExample)
CN (1) CN1183545C (enExample)
DE (1) DE50000341D1 (enExample)
TW (1) TW462051B (enExample)
WO (1) WO2000052701A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000052701A1 (de) 1999-02-26 2000-09-08 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung
US6392922B1 (en) * 2000-08-14 2002-05-21 Micron Technology, Inc. Passivated magneto-resistive bit structure and passivation method therefor
DE10043159A1 (de) * 2000-09-01 2002-03-21 Infineon Technologies Ag Speicherzellenanordnung und Verfahren zu deren Herstellung
DE10050076C2 (de) * 2000-10-10 2003-09-18 Infineon Technologies Ag Verfahren zur Herstellung einer ferromagnetischen Struktur und ferromagnetisches Bauelement
US6555858B1 (en) * 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
US6440753B1 (en) * 2001-01-24 2002-08-27 Infineon Technologies North America Corp. Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines
DE10103868A1 (de) 2001-01-30 2002-08-22 Bosch Gmbh Robert GMR-Struktur und Verfahren zu deren Herstellung
US6358756B1 (en) * 2001-02-07 2002-03-19 Micron Technology, Inc. Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
JP2002299575A (ja) 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
JP3892736B2 (ja) * 2001-03-29 2007-03-14 株式会社東芝 半導体記憶装置
DE10124366A1 (de) * 2001-05-18 2002-11-28 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleiterspeichereinrichtung
DE10125594A1 (de) 2001-05-25 2002-12-05 Infineon Technologies Ag Halbleiterspeichereinrichtung sowie Verfahren zu deren Herstellung
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
US6751149B2 (en) * 2002-03-22 2004-06-15 Micron Technology, Inc. Magnetic tunneling junction antifuse device
US6783995B2 (en) * 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
US6784091B1 (en) * 2003-06-05 2004-08-31 International Business Machines Corporation Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices
US6885577B2 (en) * 2003-06-18 2005-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic RAM cell device and array architecture
US7112454B2 (en) * 2003-10-14 2006-09-26 Micron Technology, Inc. System and method for reducing shorting in memory cells
JP2005260082A (ja) * 2004-03-12 2005-09-22 Toshiba Corp 磁気ランダムアクセスメモリ
JP4131869B2 (ja) * 2005-01-31 2008-08-13 Ｔｄｋ株式会社 電流センサ
US8698490B2 (en) * 2010-12-15 2014-04-15 Infineon Technologies Ag Magnetoresistive angle sensors having conductors arranged in multiple planes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
TW367493B (en) * 1996-04-30 1999-08-21 Toshiba Corp Reluctance component
US5920500A (en) * 1996-08-23 1999-07-06 Motorola, Inc. Magnetic random access memory having stacked memory cells and fabrication method therefor
US5861328A (en) * 1996-10-07 1999-01-19 Motorola, Inc. Method of fabricating GMR devices
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
WO2000052701A1 (de) 1999-02-26 2000-09-08 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung

Also Published As

Publication number Publication date
JP2002538614A (ja) 2002-11-12
DE50000341D1 (de) 2002-09-05
EP1157388A1 (de) 2001-11-28
EP1157388B1 (de) 2002-07-31
KR100450468B1 (ko) 2004-09-30
US20020041514A1 (en) 2002-04-11
WO2000052701A1 (de) 2000-09-08
KR20010103779A (ko) 2001-11-23
JP4138254B2 (ja) 2008-08-27
CN1349650A (zh) 2002-05-15
TW462051B (en) 2001-11-01
US6630703B2 (en) 2003-10-07

Similar Documents

Publication Publication Date Title
CN1183545C (zh) 存储元件装置及其制造方法
CN112992214B (zh) 底部钉扎sot-mram位结构和制造方法
US7885105B2 (en) Magnetic tunnel junction cell including multiple vertical magnetic domains
JP5642557B2 (ja) メモリセルおよびメモリセルの磁気トンネル接合（ｍｔｊ）の形成方法
TWI282162B (en) Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
CN100350495C (zh) 具有软基准层的磁阻器件
CN1187824C (zh) 半导体存储装置及其制造方法
US20110076784A1 (en) Fabrication of Magnetic Element Arrays
US7247506B2 (en) Method for producing magnetic memory device
CN1249815C (zh) 信息存储装置及其制造方法
JP2002538614A5 (enExample)
CN1653550A (zh) 具降低粗糙度之电阻性存储元件
JP4583997B2 (ja) 磁気メモリセルアレイおよびその製造方法
CN111916472A (zh) 磁阻式随机存取存储器
CN1451164A (zh) 存储单元构件及生产方法
CN1755832A (zh) 包括磁隧道结结构和衬底之间的存储器及其相关方法
JP2024518876A (ja) 低抵抗率スピンホール効果（ｓｈｅ）書き込みラインを有するスピン軌道トルク（ｓｏｔ）磁気抵抗ランダムアクセスメモリ（ｍｒａｍ）
CN118555902A (zh) 磁存储器及其制备方法
KR100390977B1 (ko) 반도체소자의 제조방법
CN115377283B (zh) 磁阻式随机存取存储器
JP2024134839A (ja) 磁気記憶装置
JP2002538630A (ja) メモリセル装置およびその製造方法
CN121057491A (zh) 磁阻式随机存取存储器及其制作方法
CN121240762A (zh) 磁阻式随机存取存储器
CN1748323A (zh) 高密度和高编程效率的mram设计

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee

Owner name: INFINEON TECHNOLOGIES AG

Free format text: FORMER NAME: INFENNIAN TECHNOLOGIES AG

CP01 Change in the name or title of a patent holder

Address after: Munich, Germany

Patentee after: Infineon Technologies AG

Address before: Munich, Germany

Patentee before: INFINEON TECHNOLOGIES AG

TR01 Transfer of patent right

Effective date of registration: 20130711

Address after: Munich, Germany

Patentee after: QIMONDA AG

Address before: Munich, Germany

Patentee before: Infineon Technologies AG

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160113

Address after: German Berg, Laura Ibiza

Patentee after: Infineon Technologies AG

Address before: Munich, Germany

Patentee before: QIMONDA AG

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050105

Termination date: 20160201

CF01 Termination of patent right due to non-payment of annual fee