TW462051B - Memory-cells arrangement and its production method - Google Patents
Memory-cells arrangement and its production method Download PDFInfo
- Publication number
- TW462051B TW462051B TW089103057A TW89103057A TW462051B TW 462051 B TW462051 B TW 462051B TW 089103057 A TW089103057 A TW 089103057A TW 89103057 A TW89103057 A TW 89103057A TW 462051 B TW462051 B TW 462051B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- line
- magnetic
- contact
- wire
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000005291 magnetic effect Effects 0.000 claims description 57
- 238000001465 metallisation Methods 0.000 claims description 45
- 230000005294 ferromagnetic effect Effects 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 14
- 230000002079 cooperative effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 230000009466 transformation Effects 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000012856 packing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 36
- 230000008021 deposition Effects 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 230000005465 channeling Effects 0.000 claims 1
- 230000016507 interphase Effects 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 50
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 238000002955 isolation Methods 0.000 description 19
- 239000010949 copper Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 16
- 229910052681 coesite Inorganic materials 0.000 description 12
- 229910052906 cristobalite Inorganic materials 0.000 description 12
- 229910052682 stishovite Inorganic materials 0.000 description 12
- 229910052905 tridymite Inorganic materials 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052742 iron Inorganic materials 0.000 description 11
- 230000005415 magnetization Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910007277 Si3 N4 Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000001356 surgical procedure Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 241000675108 Citrus tangerina Species 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 208000029152 Small face Diseases 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 210000002287 horizontal cell Anatomy 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Inorganic materials [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19908518 | 1999-02-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW462051B true TW462051B (en) | 2001-11-01 |
Family
ID=7899068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089103057A TW462051B (en) | 1999-02-26 | 2000-02-22 | Memory-cells arrangement and its production method |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6630703B2 (enExample) |
| EP (1) | EP1157388B1 (enExample) |
| JP (1) | JP4138254B2 (enExample) |
| KR (1) | KR100450468B1 (enExample) |
| CN (1) | CN1183545C (enExample) |
| DE (1) | DE50000341D1 (enExample) |
| TW (1) | TW462051B (enExample) |
| WO (1) | WO2000052701A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1157388B1 (de) | 1999-02-26 | 2002-07-31 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu deren herstellung |
| US6392922B1 (en) * | 2000-08-14 | 2002-05-21 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| DE10043159A1 (de) | 2000-09-01 | 2002-03-21 | Infineon Technologies Ag | Speicherzellenanordnung und Verfahren zu deren Herstellung |
| DE10050076C2 (de) | 2000-10-10 | 2003-09-18 | Infineon Technologies Ag | Verfahren zur Herstellung einer ferromagnetischen Struktur und ferromagnetisches Bauelement |
| US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
| US6440753B1 (en) * | 2001-01-24 | 2002-08-27 | Infineon Technologies North America Corp. | Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines |
| DE10103868A1 (de) * | 2001-01-30 | 2002-08-22 | Bosch Gmbh Robert | GMR-Struktur und Verfahren zu deren Herstellung |
| US6358756B1 (en) * | 2001-02-07 | 2002-03-19 | Micron Technology, Inc. | Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme |
| JP3892736B2 (ja) * | 2001-03-29 | 2007-03-14 | 株式会社東芝 | 半導体記憶装置 |
| JP2002299575A (ja) | 2001-03-29 | 2002-10-11 | Toshiba Corp | 半導体記憶装置 |
| DE10124366A1 (de) * | 2001-05-18 | 2002-11-28 | Infineon Technologies Ag | Verfahren zum Herstellen einer Halbleiterspeichereinrichtung |
| DE10125594A1 (de) | 2001-05-25 | 2002-12-05 | Infineon Technologies Ag | Halbleiterspeichereinrichtung sowie Verfahren zu deren Herstellung |
| US6485989B1 (en) | 2001-08-30 | 2002-11-26 | Micron Technology, Inc. | MRAM sense layer isolation |
| US6751149B2 (en) | 2002-03-22 | 2004-06-15 | Micron Technology, Inc. | Magnetic tunneling junction antifuse device |
| US6783995B2 (en) * | 2002-04-30 | 2004-08-31 | Micron Technology, Inc. | Protective layers for MRAM devices |
| US6784091B1 (en) * | 2003-06-05 | 2004-08-31 | International Business Machines Corporation | Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices |
| US6885577B2 (en) * | 2003-06-18 | 2005-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic RAM cell device and array architecture |
| US7112454B2 (en) * | 2003-10-14 | 2006-09-26 | Micron Technology, Inc. | System and method for reducing shorting in memory cells |
| JP2005260082A (ja) * | 2004-03-12 | 2005-09-22 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| JP4131869B2 (ja) * | 2005-01-31 | 2008-08-13 | Ｔｄｋ株式会社 | 電流センサ |
| US8698490B2 (en) * | 2010-12-15 | 2014-04-15 | Infineon Technologies Ag | Magnetoresistive angle sensors having conductors arranged in multiple planes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
| KR100262282B1 (ko) * | 1996-04-30 | 2000-10-02 | 니시무로 타이죠 | 자기 저항 효과 소자 |
| US5920500A (en) * | 1996-08-23 | 1999-07-06 | Motorola, Inc. | Magnetic random access memory having stacked memory cells and fabrication method therefor |
| US5861328A (en) * | 1996-10-07 | 1999-01-19 | Motorola, Inc. | Method of fabricating GMR devices |
| US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
| EP1157388B1 (de) | 1999-02-26 | 2002-07-31 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu deren herstellung |
-
2000
- 2000-02-01 EP EP00910516A patent/EP1157388B1/de not_active Expired - Lifetime
- 2000-02-01 CN CNB008068275A patent/CN1183545C/zh not_active Expired - Fee Related
- 2000-02-01 KR KR10-2001-7010933A patent/KR100450468B1/ko not_active Expired - Fee Related
- 2000-02-01 JP JP2000603042A patent/JP4138254B2/ja not_active Expired - Fee Related
- 2000-02-01 WO PCT/DE2000/000305 patent/WO2000052701A1/de not_active Ceased
- 2000-02-01 DE DE50000341T patent/DE50000341D1/de not_active Expired - Lifetime
- 2000-02-22 TW TW089103057A patent/TW462051B/zh not_active IP Right Cessation
-
2001
- 2001-08-27 US US09/940,011 patent/US6630703B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002538614A (ja) | 2002-11-12 |
| JP4138254B2 (ja) | 2008-08-27 |
| WO2000052701A1 (de) | 2000-09-08 |
| CN1183545C (zh) | 2005-01-05 |
| EP1157388A1 (de) | 2001-11-28 |
| EP1157388B1 (de) | 2002-07-31 |
| US20020041514A1 (en) | 2002-04-11 |
| DE50000341D1 (de) | 2002-09-05 |
| KR20010103779A (ko) | 2001-11-23 |
| CN1349650A (zh) | 2002-05-15 |
| US6630703B2 (en) | 2003-10-07 |
| KR100450468B1 (ko) | 2004-09-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |