TW287272B - - Google Patents
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- TW287272B TW287272B TW085101769A TW85101769A TW287272B TW 287272 B TW287272 B TW 287272B TW 085101769 A TW085101769 A TW 085101769A TW 85101769 A TW85101769 A TW 85101769A TW 287272 B TW287272 B TW 287272B
- Authority
- TW
- Taiwan
- Prior art keywords
- storage element
- film
- thin
- layer
- line
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 169
- 230000005291 magnetic effect Effects 0.000 claims description 154
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
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- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 claims 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
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- 229910052762 osmium Inorganic materials 0.000 description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 3
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- 229910017816 Cu—Co Inorganic materials 0.000 description 2
- 101001095089 Homo sapiens PML-RARA-regulated adapter molecule 1 Proteins 0.000 description 2
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 241001674044 Blattodea Species 0.000 description 1
- 241001454694 Clupeiformes Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000979 O alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/388,035 US5587943A (en) | 1995-02-13 | 1995-02-13 | Nonvolatile magnetoresistive memory with fully closed flux operation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW287272B true TW287272B (enExample) | 1996-10-01 |
Family
ID=23532371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085101769A TW287272B (enExample) | 1995-02-13 | 1996-02-13 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5587943A (enExample) |
| EP (1) | EP0809846B1 (enExample) |
| JP (1) | JP4171067B2 (enExample) |
| KR (1) | KR100302174B1 (enExample) |
| CA (1) | CA2211699C (enExample) |
| DE (1) | DE69609165T2 (enExample) |
| TW (1) | TW287272B (enExample) |
| WO (1) | WO1996025740A1 (enExample) |
Families Citing this family (132)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6322676B1 (en) | 1998-03-25 | 2001-11-27 | University Of Iowa Research Foundation | Magnetic composites exhibiting distinct flux properties due to gradient interfaces |
| US7709115B2 (en) * | 1994-08-25 | 2010-05-04 | University Of Iowa Research Foundation | Methods for forming magnetically modified electrodes and articles produced thereby |
| US5871625A (en) | 1994-08-25 | 1999-02-16 | University Of Iowa Research Foundation | Magnetic composites for improved electrolysis |
| US6949179B2 (en) * | 1994-08-25 | 2005-09-27 | University Of Iowa Research Foundation | Methods for forming magnetically modified electrodes and articles produced thereby |
| US20050213187A1 (en) * | 1994-08-25 | 2005-09-29 | University Of Iowa Research Foundation | Methods for forming magnetically modified electrodes and articles produced thereby |
| US6355166B1 (en) | 1994-08-25 | 2002-03-12 | The University Of Iowa Research Foundation | Magnetically enhanced composite materials and methods for making and using the same |
| US6001248A (en) | 1994-08-25 | 1999-12-14 | The University Of Iowa Research Foundation | Gradient interface magnetic composites and systems therefor |
| US6169687B1 (en) * | 1995-04-21 | 2001-01-02 | Mark B. Johnson | High density and speed magneto-electronic memory for use in computing system |
| US6741494B2 (en) * | 1995-04-21 | 2004-05-25 | Mark B. Johnson | Magnetoelectronic memory element with inductively coupled write wires |
| JP3207094B2 (ja) * | 1995-08-21 | 2001-09-10 | 松下電器産業株式会社 | 磁気抵抗効果素子及びメモリー素子 |
| US5702831A (en) * | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
| JP3767930B2 (ja) * | 1995-11-13 | 2006-04-19 | 沖電気工業株式会社 | 情報の記録・再生方法および情報記憶装置 |
| US5929636A (en) * | 1996-05-02 | 1999-07-27 | Integrated Magnetoelectronics | All-metal giant magnetoresistive solid-state component |
| US5732016A (en) * | 1996-07-02 | 1998-03-24 | Motorola | Memory cell structure in a magnetic random access memory and a method for fabricating thereof |
| US5920500A (en) * | 1996-08-23 | 1999-07-06 | Motorola, Inc. | Magnetic random access memory having stacked memory cells and fabrication method therefor |
| DE19639910C2 (de) * | 1996-09-27 | 1998-08-20 | Siemens Ag | Nichtflüchtiger Analogwertspeicher auf der Basis von GMR-Schichtsystemen |
| US5699293A (en) * | 1996-10-09 | 1997-12-16 | Motorola | Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device |
| US6028786A (en) * | 1997-04-28 | 2000-02-22 | Canon Kabushiki Kaisha | Magnetic memory element having coupled magnetic layers forming closed magnetic circuit |
| US5852574A (en) * | 1997-12-24 | 1998-12-22 | Motorola, Inc. | High density magnetoresistive random access memory device and operating method thereof |
| EP0959475A3 (en) * | 1998-05-18 | 2000-11-08 | Canon Kabushiki Kaisha | Magnetic thin film memory and recording and reproducing method and apparatus using such a memory |
| US6055179A (en) * | 1998-05-19 | 2000-04-25 | Canon Kk | Memory device utilizing giant magnetoresistance effect |
| DE19823826A1 (de) | 1998-05-28 | 1999-12-02 | Burkhard Hillebrands | MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher |
| US5953248A (en) * | 1998-07-20 | 1999-09-14 | Motorola, Inc. | Low switching field magnetic tunneling junction for high density arrays |
| US6083764A (en) * | 1998-07-20 | 2000-07-04 | Motorola, Inc. | Method of fabricating an MTJ with low areal resistance |
| US5946227A (en) * | 1998-07-20 | 1999-08-31 | Motorola, Inc. | Magnetoresistive random access memory with shared word and digit lines |
| US6130814A (en) * | 1998-07-28 | 2000-10-10 | International Business Machines Corporation | Current-induced magnetic switching device and memory including the same |
| DE19836567C2 (de) | 1998-08-12 | 2000-12-07 | Siemens Ag | Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung |
| US5982660A (en) * | 1998-08-27 | 1999-11-09 | Hewlett-Packard Company | Magnetic memory cell with off-axis reference layer orientation for improved response |
| DE19840823C1 (de) * | 1998-09-07 | 2000-07-13 | Siemens Ag | Magnetoresistives Element und dessen Verwendung als Speicherelement in einer Speicherzellenanordnung |
| TW454187B (en) * | 1998-09-30 | 2001-09-11 | Siemens Ag | Magnetoresistive memory with low current density |
| EP1155462B1 (de) | 1999-02-26 | 2005-09-07 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu deren herstellung |
| EP1157388B1 (de) * | 1999-02-26 | 2002-07-31 | Infineon Technologies AG | Speicherzellenanordnung und verfahren zu deren herstellung |
| WO2000054281A1 (fr) | 1999-03-09 | 2000-09-14 | Vladimir Mikhailovich Dubovik | Procede d'ecriture toroidale et de lecture d'informations, cellule de memoire et dispositif de memoire permettant de mettre en oeuvre ce procede |
| US6872993B1 (en) | 1999-05-25 | 2005-03-29 | Micron Technology, Inc. | Thin film memory device having local and external magnetic shielding |
| US6111783A (en) * | 1999-06-16 | 2000-08-29 | Hewlett-Packard Company | MRAM device including write circuit for supplying word and bit line current having unequal magnitudes |
| US6134139A (en) * | 1999-07-28 | 2000-10-17 | Hewlett-Packard | Magnetic memory structure with improved half-select margin |
| US6215644B1 (en) | 1999-09-09 | 2001-04-10 | Jds Uniphase Inc. | High frequency tunable capacitors |
| US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
| US6052302A (en) * | 1999-09-27 | 2000-04-18 | Motorola, Inc. | Bit-wise conditional write method and system for an MRAM |
| US6178111B1 (en) | 1999-12-07 | 2001-01-23 | Honeywell Inc. | Method and apparatus for writing data states to non-volatile storage devices |
| US6480365B1 (en) * | 1999-12-09 | 2002-11-12 | International Business Machines Corporation | Spin valve transistor using a magnetic tunnel junction |
| EP1107329B1 (en) | 1999-12-10 | 2011-07-06 | Sharp Kabushiki Kaisha | Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same |
| US6229684B1 (en) | 1999-12-15 | 2001-05-08 | Jds Uniphase Inc. | Variable capacitor and associated fabrication method |
| US6496351B2 (en) | 1999-12-15 | 2002-12-17 | Jds Uniphase Inc. | MEMS device members having portions that contact a substrate and associated methods of operating |
| US6215707B1 (en) * | 2000-04-10 | 2001-04-10 | Motorola Inc. | Charge conserving write method and system for an MRAM |
| EP1311008A4 (en) * | 2000-06-22 | 2006-01-18 | Matsushita Electric Industrial Co Ltd | MAGNETIC RESISTANCE EFFECTIVE ELEMENT AND MAGNETIC RESISTANCE EFFECT HEAD AND MAGNETIC RECORDING / PLAYING DEVICE |
| US6483740B2 (en) * | 2000-07-11 | 2002-11-19 | Integrated Magnetoelectronics Corporation | All metal giant magnetoresistive memory |
| US6469927B2 (en) | 2000-07-11 | 2002-10-22 | Integrated Magnetoelectronics | Magnetoresistive trimming of GMR circuits |
| US6594175B2 (en) * | 2000-07-11 | 2003-07-15 | Integrated Magnetoelectronics Corp | High density giant magnetoresistive memory cell |
| US6396733B1 (en) | 2000-07-17 | 2002-05-28 | Micron Technology, Inc. | Magneto-resistive memory having sense amplifier with offset control |
| US6493258B1 (en) | 2000-07-18 | 2002-12-10 | Micron Technology, Inc. | Magneto-resistive memory array |
| US6724654B1 (en) * | 2000-08-14 | 2004-04-20 | Micron Technology, Inc. | Pulsed write techniques for magneto-resistive memories |
| US6493259B1 (en) | 2000-08-14 | 2002-12-10 | Micron Technology, Inc. | Pulse write techniques for magneto-resistive memories |
| US6392922B1 (en) * | 2000-08-14 | 2002-05-21 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| US6363007B1 (en) | 2000-08-14 | 2002-03-26 | Micron Technology, Inc. | Magneto-resistive memory with shared wordline and sense line |
| US6579625B1 (en) * | 2000-10-24 | 2003-06-17 | Motorola, Inc. | Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers |
| TW544677B (en) * | 2000-12-26 | 2003-08-01 | Matsushita Electric Industrial Co Ltd | Magneto-resistance memory device |
| US6413788B1 (en) * | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
| US6653154B2 (en) * | 2001-03-15 | 2003-11-25 | Micron Technology, Inc. | Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure |
| EP1370884A4 (en) | 2001-03-23 | 2004-08-25 | Integrated Magnetoelectronics | TRANSPINORIAL SAMPLER-LOCKER CIRCUIT AND ASSOCIATED APPLICATIONS |
| US6738284B2 (en) | 2001-03-23 | 2004-05-18 | Integrated Magnetoelectronics Corporation | Transpinnor-based sample-and-hold circuit and applications |
| US6593833B2 (en) | 2001-04-04 | 2003-07-15 | Mcnc | Tunable microwave components utilizing ferroelectric and ferromagnetic composite dielectrics and methods for making same |
| DE10118197C2 (de) * | 2001-04-11 | 2003-04-03 | Infineon Technologies Ag | Integrierte magnetoresistive Halbleiterspeicheranordnung und Verfahren zum Beschreiben derselben |
| JP5019681B2 (ja) * | 2001-04-26 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
| US6744086B2 (en) | 2001-05-15 | 2004-06-01 | Nve Corporation | Current switched magnetoresistive memory cell |
| US6466471B1 (en) * | 2001-05-29 | 2002-10-15 | Hewlett-Packard Company | Low power MRAM memory array |
| JP2003007980A (ja) * | 2001-06-20 | 2003-01-10 | Sony Corp | 磁気特性の変調方法および磁気機能装置 |
| US6510080B1 (en) | 2001-08-28 | 2003-01-21 | Micron Technology Inc. | Three terminal magnetic random access memory |
| US6485989B1 (en) | 2001-08-30 | 2002-11-26 | Micron Technology, Inc. | MRAM sense layer isolation |
| US6627913B2 (en) | 2001-09-10 | 2003-09-30 | Micron Technology, Inc. | Insulation of an MRAM device through a self-aligned spacer |
| US6576969B2 (en) * | 2001-09-25 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Magneto-resistive device having soft reference layer |
| US6538917B1 (en) * | 2001-09-25 | 2003-03-25 | Hewlett-Packard Development Company, L.P. | Read methods for magneto-resistive device having soft reference layer |
| US6741496B2 (en) * | 2001-09-27 | 2004-05-25 | Intel Corporation | Electron spin mechanisms for inducing magnetic-polarization reversal |
| US6545906B1 (en) | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
| JP2003151262A (ja) * | 2001-11-15 | 2003-05-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| JP3661652B2 (ja) * | 2002-02-15 | 2005-06-15 | ソニー株式会社 | 磁気抵抗効果素子および磁気メモリ装置 |
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-
1995
- 1995-02-13 US US08/388,035 patent/US5587943A/en not_active Expired - Lifetime
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1996
- 1996-02-08 JP JP52500696A patent/JP4171067B2/ja not_active Expired - Lifetime
- 1996-02-08 KR KR1019970705516A patent/KR100302174B1/ko not_active Expired - Fee Related
- 1996-02-08 DE DE69609165T patent/DE69609165T2/de not_active Expired - Fee Related
- 1996-02-08 EP EP96904586A patent/EP0809846B1/en not_active Expired - Lifetime
- 1996-02-08 WO PCT/US1996/001653 patent/WO1996025740A1/en not_active Ceased
- 1996-02-08 CA CA002211699A patent/CA2211699C/en not_active Expired - Fee Related
- 1996-02-13 TW TW085101769A patent/TW287272B/zh active
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| EP0809846B1 (en) | 2000-07-05 |
| KR19980702121A (ko) | 1998-07-15 |
| CA2211699A1 (en) | 1996-08-22 |
| EP0809846A4 (en) | 1998-08-26 |
| JP4171067B2 (ja) | 2008-10-22 |
| WO1996025740A1 (en) | 1996-08-22 |
| US5587943A (en) | 1996-12-24 |
| KR100302174B1 (ko) | 2001-09-22 |
| CA2211699C (en) | 2001-07-24 |
| DE69609165D1 (de) | 2000-08-10 |
| EP0809846A1 (en) | 1997-12-03 |
| JPH11501438A (ja) | 1999-02-02 |
| DE69609165T2 (de) | 2001-03-22 |
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