JP2002538614A5 - - Google Patents
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- Publication number
- JP2002538614A5 JP2002538614A5 JP2000603042A JP2000603042A JP2002538614A5 JP 2002538614 A5 JP2002538614 A5 JP 2002538614A5 JP 2000603042 A JP2000603042 A JP 2000603042A JP 2000603042 A JP2000603042 A JP 2000603042A JP 2002538614 A5 JP2002538614 A5 JP 2002538614A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- groove
- conductive layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 238000003860 storage Methods 0.000 claims description 50
- 210000004027 cell Anatomy 0.000 claims description 47
- 230000005294 ferromagnetic effect Effects 0.000 claims description 38
- 210000000352 storage cell Anatomy 0.000 claims description 35
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 32
- 230000005291 magnetic effect Effects 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Inorganic materials [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 140
- 230000000694 effects Effects 0.000 description 20
- 239000010949 copper Substances 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010327 methods by industry Methods 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910004140 HfO Inorganic materials 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19908518.8 | 1999-02-26 | ||
| DE19908518 | 1999-02-26 | ||
| PCT/DE2000/000305 WO2000052701A1 (de) | 1999-02-26 | 2000-02-01 | Speicherzellenanordnung und verfahren zu deren herstellung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002538614A JP2002538614A (ja) | 2002-11-12 |
| JP2002538614A5 true JP2002538614A5 (enExample) | 2006-03-02 |
| JP4138254B2 JP4138254B2 (ja) | 2008-08-27 |
Family
ID=7899068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000603042A Expired - Fee Related JP4138254B2 (ja) | 1999-02-26 | 2000-02-01 | 記憶セル構造、およびこれを製造する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6630703B2 (enExample) |
| EP (1) | EP1157388B1 (enExample) |
| JP (1) | JP4138254B2 (enExample) |
| KR (1) | KR100450468B1 (enExample) |
| CN (1) | CN1183545C (enExample) |
| DE (1) | DE50000341D1 (enExample) |
| TW (1) | TW462051B (enExample) |
| WO (1) | WO2000052701A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000052701A1 (de) | 1999-02-26 | 2000-09-08 | Infineon Technologies Ag | Speicherzellenanordnung und verfahren zu deren herstellung |
| US6392922B1 (en) * | 2000-08-14 | 2002-05-21 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| DE10043159A1 (de) * | 2000-09-01 | 2002-03-21 | Infineon Technologies Ag | Speicherzellenanordnung und Verfahren zu deren Herstellung |
| DE10050076C2 (de) * | 2000-10-10 | 2003-09-18 | Infineon Technologies Ag | Verfahren zur Herstellung einer ferromagnetischen Struktur und ferromagnetisches Bauelement |
| US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
| US6440753B1 (en) * | 2001-01-24 | 2002-08-27 | Infineon Technologies North America Corp. | Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines |
| DE10103868A1 (de) | 2001-01-30 | 2002-08-22 | Bosch Gmbh Robert | GMR-Struktur und Verfahren zu deren Herstellung |
| US6358756B1 (en) * | 2001-02-07 | 2002-03-19 | Micron Technology, Inc. | Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme |
| JP2002299575A (ja) | 2001-03-29 | 2002-10-11 | Toshiba Corp | 半導体記憶装置 |
| JP3892736B2 (ja) * | 2001-03-29 | 2007-03-14 | 株式会社東芝 | 半導体記憶装置 |
| DE10124366A1 (de) * | 2001-05-18 | 2002-11-28 | Infineon Technologies Ag | Verfahren zum Herstellen einer Halbleiterspeichereinrichtung |
| DE10125594A1 (de) | 2001-05-25 | 2002-12-05 | Infineon Technologies Ag | Halbleiterspeichereinrichtung sowie Verfahren zu deren Herstellung |
| US6485989B1 (en) | 2001-08-30 | 2002-11-26 | Micron Technology, Inc. | MRAM sense layer isolation |
| US6751149B2 (en) * | 2002-03-22 | 2004-06-15 | Micron Technology, Inc. | Magnetic tunneling junction antifuse device |
| US6783995B2 (en) * | 2002-04-30 | 2004-08-31 | Micron Technology, Inc. | Protective layers for MRAM devices |
| US6784091B1 (en) * | 2003-06-05 | 2004-08-31 | International Business Machines Corporation | Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices |
| US6885577B2 (en) * | 2003-06-18 | 2005-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic RAM cell device and array architecture |
| US7112454B2 (en) * | 2003-10-14 | 2006-09-26 | Micron Technology, Inc. | System and method for reducing shorting in memory cells |
| JP2005260082A (ja) * | 2004-03-12 | 2005-09-22 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| JP4131869B2 (ja) * | 2005-01-31 | 2008-08-13 | Ｔｄｋ株式会社 | 電流センサ |
| US8698490B2 (en) * | 2010-12-15 | 2014-04-15 | Infineon Technologies Ag | Magnetoresistive angle sensors having conductors arranged in multiple planes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
| TW367493B (en) * | 1996-04-30 | 1999-08-21 | Toshiba Corp | Reluctance component |
| US5920500A (en) * | 1996-08-23 | 1999-07-06 | Motorola, Inc. | Magnetic random access memory having stacked memory cells and fabrication method therefor |
| US5861328A (en) * | 1996-10-07 | 1999-01-19 | Motorola, Inc. | Method of fabricating GMR devices |
| US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
| WO2000052701A1 (de) | 1999-02-26 | 2000-09-08 | Infineon Technologies Ag | Speicherzellenanordnung und verfahren zu deren herstellung |
-
2000
- 2000-02-01 WO PCT/DE2000/000305 patent/WO2000052701A1/de not_active Ceased
- 2000-02-01 KR KR10-2001-7010933A patent/KR100450468B1/ko not_active Expired - Fee Related
- 2000-02-01 EP EP00910516A patent/EP1157388B1/de not_active Expired - Lifetime
- 2000-02-01 DE DE50000341T patent/DE50000341D1/de not_active Expired - Lifetime
- 2000-02-01 JP JP2000603042A patent/JP4138254B2/ja not_active Expired - Fee Related
- 2000-02-01 CN CNB008068275A patent/CN1183545C/zh not_active Expired - Fee Related
- 2000-02-22 TW TW089103057A patent/TW462051B/zh not_active IP Right Cessation
-
2001
- 2001-08-27 US US09/940,011 patent/US6630703B2/en not_active Expired - Lifetime
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