CN1177373C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法

Info

Publication number
CN1177373C
CN1177373C CNB011165421A CN01116542A CN1177373C CN 1177373 C CN1177373 C CN 1177373C CN B011165421 A CNB011165421 A CN B011165421A CN 01116542 A CN01116542 A CN 01116542A CN 1177373 C CN1177373 C CN 1177373C
Authority
CN
China
Prior art keywords
mentioned
semiconductor regions
electrode
forms
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011165421A
Other languages
English (en)
Chinese (zh)
Other versions
CN1317833A (zh
Inventor
马场嘉朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1317833A publication Critical patent/CN1317833A/zh
Application granted granted Critical
Publication of CN1177373C publication Critical patent/CN1177373C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB011165421A 2000-04-12 2001-04-12 半导体器件及其制造方法 Expired - Fee Related CN1177373C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000111039A JP4965756B2 (ja) 2000-04-12 2000-04-12 半導体装置
JP111039/2000 2000-04-12

Publications (2)

Publication Number Publication Date
CN1317833A CN1317833A (zh) 2001-10-17
CN1177373C true CN1177373C (zh) 2004-11-24

Family

ID=18623452

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011165421A Expired - Fee Related CN1177373C (zh) 2000-04-12 2001-04-12 半导体器件及其制造方法

Country Status (6)

Country Link
US (1) US6476429B2 (https=)
EP (1) EP1146566A3 (https=)
JP (1) JP4965756B2 (https=)
KR (1) KR100398756B1 (https=)
CN (1) CN1177373C (https=)
TW (1) TW492058B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007976A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体装置及びモジュール装置
US6686244B2 (en) * 2002-03-21 2004-02-03 General Semiconductor, Inc. Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
JP3634830B2 (ja) * 2002-09-25 2005-03-30 株式会社東芝 電力用半導体素子
JP4209260B2 (ja) 2003-06-04 2009-01-14 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP4813762B2 (ja) 2003-12-25 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP2005322723A (ja) 2004-05-07 2005-11-17 Nec Electronics Corp 半導体装置およびその製造方法
EP1696490A1 (en) * 2005-02-25 2006-08-30 STMicroelectronics S.r.l. Charge compensation semiconductor device and relative manufacturing process
JP4488984B2 (ja) * 2005-08-25 2010-06-23 株式会社東芝 ショットキーバリアダイオード
US7994573B2 (en) 2007-12-14 2011-08-09 Fairchild Semiconductor Corporation Structure and method for forming power devices with carbon-containing region
EP2286455B1 (en) * 2008-05-28 2019-04-10 Nexperia B.V. Trench gate semiconductor device and method of manufacturing thereof
CN102456692A (zh) * 2011-11-29 2012-05-16 上海华力微电子有限公司 异质结1t-dram单元结构及其制备方法
JP2013175655A (ja) 2012-02-27 2013-09-05 Toshiba Corp 電力用半導体装置及びその製造方法
KR101514537B1 (ko) * 2013-08-09 2015-04-22 삼성전기주식회사 전력 반도체 소자 및 그 제조 방법
JP2017168720A (ja) * 2016-03-17 2017-09-21 富士電機株式会社 炭化珪素半導体装置の製造方法
JP6703666B2 (ja) * 2016-08-31 2020-06-03 国立研究開発法人産業技術総合研究所 炭化珪素基体の製造方法
US10720494B2 (en) * 2018-01-22 2020-07-21 Globalfoundries Inc. Field-effect transistors with airgaps
CN109494246B (zh) * 2018-10-12 2021-11-02 龙腾半导体有限公司 超结mosfet结构及其制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1019720B (zh) * 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
DE4309764C2 (de) * 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
JPH06334503A (ja) * 1993-05-24 1994-12-02 Nippondenso Co Ltd 縦型ｍｉｓトランジスタ
JPH07231088A (ja) * 1994-02-18 1995-08-29 Nissan Motor Co Ltd Ｍｉｓ形電界効果トランジスタ
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
JP3392665B2 (ja) 1995-11-06 2003-03-31 株式会社東芝 半導体装置
EP1039548B1 (de) * 1996-02-05 2004-03-31 Infineon Technologies AG Durch Feldeffekt steuerbares Halbleiterbauelement
JPH09270513A (ja) * 1996-03-29 1997-10-14 Toyota Central Res & Dev Lab Inc 絶縁ゲート型半導体装置およびその製造方法
JPH10284718A (ja) * 1997-04-08 1998-10-23 Fuji Electric Co Ltd 絶縁ゲート型サイリスタ
DE19808348C1 (de) * 1998-02-27 1999-06-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
SE512259C2 (sv) * 1998-03-23 2000-02-21 Abb Research Ltd Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning
JP3762136B2 (ja) * 1998-04-24 2006-04-05 株式会社東芝 半導体装置
JP3988262B2 (ja) * 1998-07-24 2007-10-10 富士電機デバイステクノロジー株式会社 縦型超接合半導体素子およびその製造方法
ATE386339T1 (de) * 1998-11-18 2008-03-15 Infineon Technologies Ag Halbleiterbauelement mit dielektrischen oder halbisolierenden abschirmstrukturen
JP4074051B2 (ja) * 1999-08-31 2008-04-09 株式会社東芝 半導体基板およびその製造方法

Also Published As

Publication number Publication date
EP1146566A2 (en) 2001-10-17
CN1317833A (zh) 2001-10-17
US6476429B2 (en) 2002-11-05
JP2001298189A (ja) 2001-10-26
KR20010098551A (ko) 2001-11-08
TW492058B (en) 2002-06-21
JP4965756B2 (ja) 2012-07-04
US20020008258A1 (en) 2002-01-24
KR100398756B1 (ko) 2003-09-19
EP1146566A3 (en) 2008-04-09

Similar Documents

Publication Publication Date Title
CN1177373C (zh) 半导体器件及其制造方法
CN100342505C (zh) 高压半导体器件及其制造方法
JP7263178B2 (ja) 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
CN1314091C (zh) 具有内嵌的沟槽肖特基整流器的沟槽dmos晶体管
CN1317771C (zh) 绝缘栅型半导体器件
JP5586887B2 (ja) 半導体装置及びその製造方法
US6849880B1 (en) Power semiconductor device
CN1215570C (zh) Mos晶体管组件
CN1295795C (zh) 电力半导体器件
CN1977386A (zh) 碳化硅器件及其制造方法
CN1284246C (zh) 高耐电压场效应型半导体设备
CN1790714A (zh) 半导体器件及制造其的方法
CN1726596A (zh) 具有注入漏漂移区的沟槽金属氧化物半导体场效应晶体管及其制造方法
JP7278902B2 (ja) 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
CN1605119A (zh) 有改善的较小正向电压损耗和较高截断能力的半导体结构
CN1528020A (zh) 具有较低栅极电荷结构的沟槽mosfet
CN1815739A (zh) 半导体器件及其制作方法
CN1356729A (zh) 半导体器件
CN1468449A (zh) 内含沟道型肖特基整流器的沟道型dmos晶体管
JP2023043336A (ja) 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
CN1763974A (zh) 半导体器件及其制造方法
CN1819270A (zh) 场效应晶体管和制造场效应晶体管的方法
CN104347614A (zh) 功率半导体器件及其制造方法
CN1755944A (zh) 包括ldmos晶体管的半导体器件
US20230155020A1 (en) Semiconductor device

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20041124

Termination date: 20100412