KR100398756B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR100398756B1
KR100398756B1 KR10-2001-0019561A KR20010019561A KR100398756B1 KR 100398756 B1 KR100398756 B1 KR 100398756B1 KR 20010019561 A KR20010019561 A KR 20010019561A KR 100398756 B1 KR100398756 B1 KR 100398756B1
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South Korea
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semiconductor
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semiconductor layer
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KR10-2001-0019561A
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English (en)
Korean (ko)
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KR20010098551A (ko
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바바요시로
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가부시끼가이샤 도시바
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2001-0019561A 2000-04-12 2001-04-12 반도체장치 및 그 제조방법 Expired - Fee Related KR100398756B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-111039 2000-04-12
JP2000111039A JP4965756B2 (ja) 2000-04-12 2000-04-12 半導体装置

Publications (2)

Publication Number Publication Date
KR20010098551A KR20010098551A (ko) 2001-11-08
KR100398756B1 true KR100398756B1 (ko) 2003-09-19

Family

ID=18623452

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0019561A Expired - Fee Related KR100398756B1 (ko) 2000-04-12 2001-04-12 반도체장치 및 그 제조방법

Country Status (6)

Country Link
US (1) US6476429B2 (https=)
EP (1) EP1146566A3 (https=)
JP (1) JP4965756B2 (https=)
KR (1) KR100398756B1 (https=)
CN (1) CN1177373C (https=)
TW (1) TW492058B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007976A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体装置及びモジュール装置
US6686244B2 (en) * 2002-03-21 2004-02-03 General Semiconductor, Inc. Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
JP3634830B2 (ja) * 2002-09-25 2005-03-30 株式会社東芝 電力用半導体素子
JP4209260B2 (ja) 2003-06-04 2009-01-14 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP4813762B2 (ja) 2003-12-25 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP2005322723A (ja) 2004-05-07 2005-11-17 Nec Electronics Corp 半導体装置およびその製造方法
EP1696490A1 (en) * 2005-02-25 2006-08-30 STMicroelectronics S.r.l. Charge compensation semiconductor device and relative manufacturing process
JP4488984B2 (ja) * 2005-08-25 2010-06-23 株式会社東芝 ショットキーバリアダイオード
US7994573B2 (en) 2007-12-14 2011-08-09 Fairchild Semiconductor Corporation Structure and method for forming power devices with carbon-containing region
EP2286455B1 (en) * 2008-05-28 2019-04-10 Nexperia B.V. Trench gate semiconductor device and method of manufacturing thereof
CN102456692A (zh) * 2011-11-29 2012-05-16 上海华力微电子有限公司 异质结1t-dram单元结构及其制备方法
JP2013175655A (ja) 2012-02-27 2013-09-05 Toshiba Corp 電力用半導体装置及びその製造方法
KR101514537B1 (ko) * 2013-08-09 2015-04-22 삼성전기주식회사 전력 반도체 소자 및 그 제조 방법
JP2017168720A (ja) * 2016-03-17 2017-09-21 富士電機株式会社 炭化珪素半導体装置の製造方法
JP6703666B2 (ja) * 2016-08-31 2020-06-03 国立研究開発法人産業技術総合研究所 炭化珪素基体の製造方法
US10720494B2 (en) * 2018-01-22 2020-07-21 Globalfoundries Inc. Field-effect transistors with airgaps
CN109494246B (zh) * 2018-10-12 2021-11-02 龙腾半导体有限公司 超结mosfet结构及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216275A (en) * 1991-03-19 1993-06-01 University Of Electronic Science And Technology Of China Semiconductor power devices with alternating conductivity type high-voltage breakdown regions
US5438215A (en) * 1993-03-25 1995-08-01 Siemens Aktiengesellschaft Power MOSFET
WO1997029518A1 (de) * 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
JPH09270513A (ja) * 1996-03-29 1997-10-14 Toyota Central Res & Dev Lab Inc 絶縁ゲート型半導体装置およびその製造方法
JPH11289091A (ja) * 1998-02-27 1999-10-19 Siemens Ag 電力用半導体素子
JP2000040822A (ja) * 1998-07-24 2000-02-08 Fuji Electric Co Ltd 超接合半導体素子およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334503A (ja) * 1993-05-24 1994-12-02 Nippondenso Co Ltd 縦型ｍｉｓトランジスタ
JPH07231088A (ja) * 1994-02-18 1995-08-29 Nissan Motor Co Ltd Ｍｉｓ形電界効果トランジスタ
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
JP3392665B2 (ja) 1995-11-06 2003-03-31 株式会社東芝 半導体装置
JPH10284718A (ja) * 1997-04-08 1998-10-23 Fuji Electric Co Ltd 絶縁ゲート型サイリスタ
SE512259C2 (sv) * 1998-03-23 2000-02-21 Abb Research Ltd Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning
JP3762136B2 (ja) * 1998-04-24 2006-04-05 株式会社東芝 半導体装置
ATE386339T1 (de) * 1998-11-18 2008-03-15 Infineon Technologies Ag Halbleiterbauelement mit dielektrischen oder halbisolierenden abschirmstrukturen
JP4074051B2 (ja) * 1999-08-31 2008-04-09 株式会社東芝 半導体基板およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216275A (en) * 1991-03-19 1993-06-01 University Of Electronic Science And Technology Of China Semiconductor power devices with alternating conductivity type high-voltage breakdown regions
US5438215A (en) * 1993-03-25 1995-08-01 Siemens Aktiengesellschaft Power MOSFET
WO1997029518A1 (de) * 1996-02-05 1997-08-14 Siemens Aktiengesellschaft Durch feldeffekt steuerbares halbleiterbauelement
JP2000504879A (ja) * 1996-02-05 2000-04-18 シーメンス アクチエンゲゼルシヤフト 電界効果により制御可能の半導体デバイス
JPH09270513A (ja) * 1996-03-29 1997-10-14 Toyota Central Res & Dev Lab Inc 絶縁ゲート型半導体装置およびその製造方法
JPH11289091A (ja) * 1998-02-27 1999-10-19 Siemens Ag 電力用半導体素子
JP2000040822A (ja) * 1998-07-24 2000-02-08 Fuji Electric Co Ltd 超接合半導体素子およびその製造方法

Also Published As

Publication number Publication date
EP1146566A2 (en) 2001-10-17
CN1317833A (zh) 2001-10-17
US6476429B2 (en) 2002-11-05
JP2001298189A (ja) 2001-10-26
KR20010098551A (ko) 2001-11-08
TW492058B (en) 2002-06-21
JP4965756B2 (ja) 2012-07-04
US20020008258A1 (en) 2002-01-24
CN1177373C (zh) 2004-11-24
EP1146566A3 (en) 2008-04-09

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