CN1163909C - 用于开关电流存储单元的时钟直通减少系统 - Google Patents

用于开关电流存储单元的时钟直通减少系统 Download PDF

Info

Publication number
CN1163909C
CN1163909C CNB971991340A CN97199134A CN1163909C CN 1163909 C CN1163909 C CN 1163909C CN B971991340 A CNB971991340 A CN B971991340A CN 97199134 A CN97199134 A CN 97199134A CN 1163909 C CN1163909 C CN 1163909C
Authority
CN
China
Prior art keywords
current
voltage
drain
control
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB971991340A
Other languages
English (en)
Chinese (zh)
Other versions
CN1234902A (zh
Inventor
让-雅克・卡扎济昂
让－雅克·卡扎济昂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of CN1234902A publication Critical patent/CN1234902A/zh
Application granted granted Critical
Publication of CN1163909C publication Critical patent/CN1163909C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/028—Current mode circuits, e.g. switched current memories

Landscapes

  • Control Of Electrical Variables (AREA)
  • Analogue/Digital Conversion (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Memories (AREA)
CNB971991340A 1996-09-16 1997-09-04 用于开关电流存储单元的时钟直通减少系统 Expired - Fee Related CN1163909C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/714,376 1996-09-16
US08/714,376 US5783952A (en) 1996-09-16 1996-09-16 Clock feedthrough reduction system for switched current memory cells

Publications (2)

Publication Number Publication Date
CN1234902A CN1234902A (zh) 1999-11-10
CN1163909C true CN1163909C (zh) 2004-08-25

Family

ID=24869791

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB971991340A Expired - Fee Related CN1163909C (zh) 1996-09-16 1997-09-04 用于开关电流存储单元的时钟直通减少系统

Country Status (8)

Country Link
US (1) US5783952A (cg-RX-API-DMAC10.html)
EP (1) EP0925588B1 (cg-RX-API-DMAC10.html)
JP (1) JP2001523371A (cg-RX-API-DMAC10.html)
KR (1) KR100466082B1 (cg-RX-API-DMAC10.html)
CN (1) CN1163909C (cg-RX-API-DMAC10.html)
DE (1) DE69717469T2 (cg-RX-API-DMAC10.html)
TW (1) TW337019B (cg-RX-API-DMAC10.html)
WO (1) WO1998011554A1 (cg-RX-API-DMAC10.html)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9720740D0 (en) * 1997-10-01 1997-12-03 Philips Electronics Nv Switched-current memory
US6028466A (en) * 1998-02-05 2000-02-22 Lucent Technologies Inc. Integrated circuit including high transconductance voltage clamp
US6307406B1 (en) * 1998-09-25 2001-10-23 Lucent Technologies, Inc. Current comparator for current mode circuits
EP1288901B1 (en) 2001-08-29 2019-05-15 Gold Charm Limited A semiconductor device for driving a current load device and a current load device provided therewith
JP4193452B2 (ja) * 2001-08-29 2008-12-10 日本電気株式会社 電流負荷デバイス駆動用半導体装置及びそれを備えた電流負荷デバイス
US7365713B2 (en) * 2001-10-24 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7456810B2 (en) * 2001-10-26 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and driving method thereof
US7576734B2 (en) * 2001-10-30 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit, light emitting device, and method for driving the same
US7742064B2 (en) 2001-10-30 2010-06-22 Semiconductor Energy Laboratory Co., Ltd Signal line driver circuit, light emitting device and driving method thereof
TWI256607B (en) * 2001-10-31 2006-06-11 Semiconductor Energy Lab Signal line drive circuit and light emitting device
TWI261217B (en) * 2001-10-31 2006-09-01 Semiconductor Energy Lab Driving circuit of signal line and light emitting apparatus
US6927618B2 (en) * 2001-11-28 2005-08-09 Semiconductor Energy Laboratory Co., Ltd. Electric circuit
JP2003283271A (ja) * 2002-01-17 2003-10-03 Semiconductor Energy Lab Co Ltd 電気回路
JP4271479B2 (ja) * 2003-04-09 2009-06-03 株式会社半導体エネルギー研究所 ソースフォロワ及び半導体装置
TW591586B (en) * 2003-04-10 2004-06-11 Toppoly Optoelectronics Corp Data-line driver circuits for current-programmed electro-luminescence display device
JP4543625B2 (ja) * 2003-05-27 2010-09-15 ソニー株式会社 表示装置
US6844759B2 (en) * 2003-06-10 2005-01-18 Concordia University Method and circuit for eliminating charge injection from transistor switches
KR100515300B1 (ko) 2003-10-07 2005-09-15 삼성에스디아이 주식회사 전류 샘플/홀드 회로와 전류 샘플/홀드 방법 및 이를이용한 역다중화 장치와 디스플레이 장치
CA2490858A1 (en) 2004-12-07 2006-06-07 Ignis Innovation Inc. Driving method for compensated voltage-programming of amoled displays
US7068024B1 (en) * 2004-12-30 2006-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage regulator having positive temperature coefficient for self-compensation and related method of regulating voltage
DE102005004608B3 (de) * 2005-02-01 2006-04-20 Siemens Ag Verfahren und Schaltungsanordnung zum Überprüfen von elektrischen Kontaktierungen zwischen einem ersten Ausgangspin eines ersten Leistungsschalters einer Leistungsschaltvorrichtung und einem externen Knoten
JP4779113B2 (ja) * 2005-02-09 2011-09-28 国立大学法人 名古屋工業大学 サンプルホールド回路
CN102663977B (zh) 2005-06-08 2015-11-18 伊格尼斯创新有限公司 用于驱动发光器件显示器的方法和系统
US9269322B2 (en) 2006-01-09 2016-02-23 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
EP1971975B1 (en) 2006-01-09 2015-10-21 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9489891B2 (en) 2006-01-09 2016-11-08 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
FR2899841B1 (fr) * 2006-04-12 2008-07-04 Bic Soc Pointe d'ecriture pour effectuer des traces de differentes largeurs et instrument d'ecriture comprenant une telle pointe
CN104299566B (zh) 2008-04-18 2017-11-10 伊格尼斯创新公司 用于发光器件显示器的系统和驱动方法
CA2637343A1 (en) 2008-07-29 2010-01-29 Ignis Innovation Inc. Improving the display source driver
US9370075B2 (en) 2008-12-09 2016-06-14 Ignis Innovation Inc. System and method for fast compensation programming of pixels in a display
US8283967B2 (en) 2009-11-12 2012-10-09 Ignis Innovation Inc. Stable current source for system integration to display substrate
CA2687631A1 (en) 2009-12-06 2011-06-06 Ignis Innovation Inc Low power driving scheme for display applications
CA2696778A1 (en) 2010-03-17 2011-09-17 Ignis Innovation Inc. Lifetime, uniformity, parameter extraction methods
KR101132216B1 (ko) * 2010-12-02 2012-04-02 금오공과대학교 산학협력단 라우팅 더미 커패시터를 구비한 디지털 아날로그 변환기
US20140368491A1 (en) 2013-03-08 2014-12-18 Ignis Innovation Inc. Pixel circuits for amoled displays
US9886899B2 (en) 2011-05-17 2018-02-06 Ignis Innovation Inc. Pixel Circuits for AMOLED displays
US9351368B2 (en) 2013-03-08 2016-05-24 Ignis Innovation Inc. Pixel circuits for AMOLED displays
WO2012164474A2 (en) 2011-05-28 2012-12-06 Ignis Innovation Inc. System and method for fast compensation programming of pixels in a display
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
CN102915071A (zh) * 2012-10-23 2013-02-06 南京航空航天大学 面向混合信号处理的低电压低功耗开关电流采样保持电路
US8975948B2 (en) * 2012-11-15 2015-03-10 Texas Instruments Incorporated Wide common mode range transmission gate
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
CA2894717A1 (en) 2015-06-19 2016-12-19 Ignis Innovation Inc. Optoelectronic device characterization in array with shared sense line
KR102158382B1 (ko) 2013-08-22 2020-09-22 삼성디스플레이 주식회사 전류 메모리 셀 및 이를 포함하는 전류 모드 디지털 아날로그 컨버터
CA2873476A1 (en) 2014-12-08 2016-06-08 Ignis Innovation Inc. Smart-pixel display architecture
CA2886862A1 (en) 2015-04-01 2016-10-01 Ignis Innovation Inc. Adjusting display brightness for avoiding overheating and/or accelerated aging
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2898282A1 (en) 2015-07-24 2017-01-24 Ignis Innovation Inc. Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
CA2908285A1 (en) 2015-10-14 2017-04-14 Ignis Innovation Inc. Driver with multiple color pixel structure
US9728271B2 (en) * 2015-10-30 2017-08-08 Sony Semiconductor Solutions Corporation Charge injection noise reduction in sample-and-hold circuit
US9715941B2 (en) * 2015-10-30 2017-07-25 Sony Semiconductor Solutions Corporation State machine controlled MOS linear resistor
WO2018032327A1 (zh) * 2016-08-16 2018-02-22 深圳市汇顶科技股份有限公司 一种电流采样保持电路及信号采集系统
KR101767172B1 (ko) 2016-09-12 2017-08-10 서울과학기술대학교 산학협력단 클락-피드스루(clock-feedthrough) 최소화하기 위한 전류메모리 회로
US11469223B2 (en) * 2019-05-31 2022-10-11 Analog Devices International Unlimited Company High precision switched capacitor MOSFET current measurement technique
CN115622549B (zh) * 2022-12-19 2023-02-28 晟矽微电子(南京)有限公司 开关电路、数模转换器、芯片及电子设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958123A (en) * 1987-12-23 1990-09-18 U.S. Philips Corporation Circuit arrangement for processing sampled analogue electrical signals
US4937469A (en) * 1988-08-30 1990-06-26 International Business Machines Corporation Switched current mode driver in CMOS with short circuit protection
GB2231423A (en) * 1989-05-10 1990-11-14 Philips Electronic Associated Integrator circuit
GB2231424A (en) * 1989-05-10 1990-11-14 Philips Electronic Associated Integrator circuit
GB2234835A (en) * 1989-08-07 1991-02-13 Philips Electronic Associated Intergrator circuit
GB2235799A (en) * 1989-09-06 1991-03-13 Philips Electronic Associated Differentiator circuit
US5296752A (en) * 1991-05-08 1994-03-22 U.S. Philips Corporation Current memory cell
GB9204763D0 (en) * 1992-03-05 1992-04-15 Philips Electronics Uk Ltd Signal processing arrangements
GB9301463D0 (en) * 1993-01-26 1993-03-17 Philips Electronics Uk Ltd Current memory
GB9424810D0 (en) * 1994-12-08 1995-02-08 Philips Electronics Uk Ltd Current comparator arrangement
GB9517787D0 (en) * 1995-08-31 1995-11-01 Philips Electronics Uk Ltd Current memory

Also Published As

Publication number Publication date
CN1234902A (zh) 1999-11-10
KR100466082B1 (ko) 2005-01-13
KR20000036128A (ko) 2000-06-26
HK1021064A1 (en) 2000-05-26
DE69717469T2 (de) 2003-06-26
DE69717469D1 (de) 2003-01-09
EP0925588A1 (en) 1999-06-30
TW337019B (en) 1998-07-21
US5783952A (en) 1998-07-21
WO1998011554A1 (en) 1998-03-19
JP2001523371A (ja) 2001-11-20
EP0925588B1 (en) 2002-11-27
EP0925588A4 (cg-RX-API-DMAC10.html) 1999-07-21

Similar Documents

Publication Publication Date Title
CN1163909C (zh) 用于开关电流存储单元的时钟直通减少系统
US4897596A (en) Circuit arrangement for processing sampled analogue electrical signals
Hughes et al. S/sup 2/I: a two-step approach to switched-currents
US6060937A (en) Two-phase bootstrapped CMOS switch drive technique and circuit
US4843265A (en) Temperature compensated monolithic delay circuit
KR101517745B1 (ko) 부스트된 전하 회로
US5400273A (en) Analog current memory
JPH1079626A (ja) ニューロンｍｏｓトランジスタを有する増幅器
JPH0756931B2 (ja) 閾値制御型電子装置およびそれを用いた比較器
US7453291B2 (en) Switch linearized track and hold circuit for switch linearization
CN101496282A (zh) 具有改进漂移的参考缓冲器
JP2004129276A (ja) トラックアンドホールド回路
EP0730158A1 (en) Low offset comparator with time-shared input and current memory cell
CN1214393C (zh) 数据确定电路及数据确定方法
US7525370B2 (en) Circuits for generating a reference voltage
KR19990088624A (ko) 고속샘플홀드어플리케이션을위한저전압버퍼증폭기
CN1229752C (zh) 改进的用于信号处理的方法和电路装置
HK1021064B (en) Clock feedthrough reduction system for switched current memory cells
US7719456B2 (en) Analog error correction for a pipelined charge-domain A/D converter
Sugimoto et al. The design of a 1 V, 40 MHz, current-mode sample-and-hold circuit with 10-bit linearity
Zhang et al. A 12 bit, 2 V current-mode pipelined A/D converter using a digital CMOS process
Rout et al. Design of 1 V switched-current cells in standard CMOS process
CN120128816A (zh) 基于背栅调制的像素级非均匀性校准前端电路和电子设备
Kaplon Fast, low power, analogue multiplexer for readout of multichannel electronics
CN112929017A (zh) 一种提升复位速度的积分器电路

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1021064

Country of ref document: HK

C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: Atmel Corp.

Address before: California, USA

Patentee before: ATMEL Corp.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040825

Termination date: 20130904