CN115699331A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN115699331A
CN115699331A CN202180039434.0A CN202180039434A CN115699331A CN 115699331 A CN115699331 A CN 115699331A CN 202180039434 A CN202180039434 A CN 202180039434A CN 115699331 A CN115699331 A CN 115699331A
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CN
China
Prior art keywords
region
trench
semiconductor substrate
semiconductor device
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180039434.0A
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English (en)
Chinese (zh)
Inventor
松井俊之
上村和贵
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of CN115699331A publication Critical patent/CN115699331A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202180039434.0A 2020-12-07 2021-10-21 半导体装置 Pending CN115699331A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-202647 2020-12-07
JP2020202647 2020-12-07
PCT/JP2021/038976 WO2022123923A1 (ja) 2020-12-07 2021-10-21 半導体装置

Publications (1)

Publication Number Publication Date
CN115699331A true CN115699331A (zh) 2023-02-03

Family

ID=81972857

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180039434.0A Pending CN115699331A (zh) 2020-12-07 2021-10-21 半导体装置

Country Status (5)

Country Link
US (1) US20230071170A1 (enExample)
JP (2) JP7456520B2 (enExample)
CN (1) CN115699331A (enExample)
DE (1) DE112021002169T5 (enExample)
WO (1) WO2022123923A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7613570B2 (ja) * 2021-05-11 2025-01-15 富士電機株式会社 半導体装置
JP7593511B2 (ja) * 2022-01-20 2024-12-03 富士電機株式会社 半導体装置
JP7756607B2 (ja) * 2022-08-22 2025-10-20 株式会社東芝 半導体装置及びその製造方法
CN116230752B (zh) * 2023-02-13 2025-09-19 珠海格力电器股份有限公司 逆导型绝缘栅双极晶体管及其制备方法
JPWO2024185313A1 (enExample) * 2023-03-07 2024-09-12
WO2025004543A1 (ja) * 2023-06-26 2025-01-02 ローム株式会社 半導体装置
CN117116996B (zh) * 2023-10-24 2024-05-14 合肥海图微电子有限公司 一种功率器件及其制作方法
JP2025132606A (ja) * 2024-02-29 2025-09-10 ミネベアパワーデバイス株式会社 半導体装置、および、電力変換装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288386A (ja) 2007-05-17 2008-11-27 Hitachi Ltd 半導体装置
JP5922886B2 (ja) 2011-07-13 2016-05-24 株式会社豊田中央研究所 ダイオードおよび半導体装置
WO2013014943A2 (en) * 2011-07-27 2013-01-31 Kabushiki Kaisha Toyota Chuo Kenkyusho Diode, semiconductor device, and mosfet
JP2013051345A (ja) * 2011-08-31 2013-03-14 Toyota Central R&D Labs Inc ダイオード、半導体装置およびｍｏｓｆｅｔ
JP6144510B2 (ja) 2013-03-11 2017-06-07 三菱電機株式会社 半導体装置の製造方法
JP6154292B2 (ja) * 2013-11-06 2017-06-28 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6135636B2 (ja) * 2014-10-17 2017-05-31 トヨタ自動車株式会社 半導体装置
JP6676988B2 (ja) 2016-01-29 2020-04-08 株式会社デンソー 半導体装置
DE102017107174B4 (de) 2017-04-04 2020-10-08 Infineon Technologies Ag IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT
JP6946922B2 (ja) * 2017-10-18 2021-10-13 株式会社デンソー 半導体装置
JP7091714B2 (ja) 2018-03-01 2022-06-28 株式会社デンソー 半導体装置
JP7286635B2 (ja) * 2018-05-30 2023-06-05 ローム株式会社 半導体装置
CN111684604B (zh) * 2018-08-10 2023-08-18 富士电机株式会社 半导体装置
CN114846622A (zh) * 2020-07-03 2022-08-02 富士电机株式会社 半导体装置
JP7574558B2 (ja) * 2020-07-13 2024-10-29 富士電機株式会社 半導体装置
JP7370309B2 (ja) * 2020-10-21 2023-10-27 三菱電機株式会社 逆導通型半導体装置および逆導通型半導体装置の製造方法

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Publication number Publication date
JP2024060027A (ja) 2024-05-01
WO2022123923A1 (ja) 2022-06-16
US20230071170A1 (en) 2023-03-09
JPWO2022123923A1 (enExample) 2022-06-16
JP7456520B2 (ja) 2024-03-27
DE112021002169T5 (de) 2023-06-29
JP7758079B2 (ja) 2025-10-22

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