CN1156002C - 半导体芯片载体元件制作方法 - Google Patents
半导体芯片载体元件制作方法 Download PDFInfo
- Publication number
- CN1156002C CN1156002C CNB971955042A CN97195504A CN1156002C CN 1156002 C CN1156002 C CN 1156002C CN B971955042 A CNB971955042 A CN B971955042A CN 97195504 A CN97195504 A CN 97195504A CN 1156002 C CN1156002 C CN 1156002C
- Authority
- CN
- China
- Prior art keywords
- carrier
- film
- carrier element
- chip
- strengthening membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07745—Mounting details of integrated circuit chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
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- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01006—Carbon [C]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01057—Lanthanum [La]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Credit Cards Or The Like (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Light Receiving Elements (AREA)
- Turning (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19623826A DE19623826C2 (de) | 1996-06-14 | 1996-06-14 | Verfahren zur Herstellung eines Trägerelements für Halbleiterchips |
| DE19623826.9 | 1996-06-14 | ||
| DE29621837.5 | 1996-12-16 | ||
| DE29621837U DE29621837U1 (de) | 1996-12-16 | 1996-12-16 | Trägerelement für Halbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1222253A CN1222253A (zh) | 1999-07-07 |
| CN1156002C true CN1156002C (zh) | 2004-06-30 |
Family
ID=26026591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB971955042A Expired - Fee Related CN1156002C (zh) | 1996-06-14 | 1997-06-10 | 半导体芯片载体元件制作方法 |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP0904602B1 (enExample) |
| JP (1) | JP3498800B2 (enExample) |
| CN (1) | CN1156002C (enExample) |
| AT (1) | ATE212752T1 (enExample) |
| BR (1) | BR9709717A (enExample) |
| DE (1) | DE59706247D1 (enExample) |
| ES (1) | ES2171948T3 (enExample) |
| IN (1) | IN192422B (enExample) |
| RU (1) | RU2191446C2 (enExample) |
| UA (1) | UA42106C2 (enExample) |
| WO (1) | WO1997048133A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2790850B1 (fr) * | 1999-03-12 | 2004-02-27 | Gemplus Card Int | Procede de fabrication de dispositif electronique portable de type carte a puce |
| JP3314304B2 (ja) | 1999-06-07 | 2002-08-12 | アムコー テクノロジー コリア インコーポレーティド | 半導体パッケージ用の回路基板 |
| JP2006520102A (ja) * | 2003-03-07 | 2006-08-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体装置、半導体本体並びにその製造方法 |
| TWI578465B (zh) * | 2008-11-17 | 2017-04-11 | 先進封裝技術私人有限公司 | 半導體導線元件、半導體封裝元件與半導體裝置之製造方法 |
| US9847268B2 (en) | 2008-11-21 | 2017-12-19 | Advanpack Solutions Pte. Ltd. | Semiconductor package and manufacturing method thereof |
| FR2974969B1 (fr) * | 2011-05-03 | 2014-03-14 | Alstom Transport Sa | Dispositif d'interconnexion electrique d'au moins un composant electronique avec une alimentation electrique comprenant des moyens de diminution d'une inductance de boucle entre des premiere et deuxieme bornes |
| US20140239428A1 (en) * | 2013-02-28 | 2014-08-28 | Infineon Technologies Ag | Chip arrangement and a method for manufacturing a chip arrangement |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61204788A (ja) * | 1985-03-08 | 1986-09-10 | Dainippon Printing Co Ltd | 携持用電子装置 |
| FR2645680B1 (fr) * | 1989-04-07 | 1994-04-29 | Thomson Microelectronics Sa Sg | Encapsulation de modules electroniques et procede de fabrication |
| DE3924439A1 (de) * | 1989-07-24 | 1991-04-18 | Edgar Schneider | Traegerelement mit wenigstens einem integrierten schaltkreis, insbesondere zum einbau in chip-karten, sowie verfahren zur herstellung dieser traegerelemente |
-
1997
- 1997-06-10 RU RU99100202/28A patent/RU2191446C2/ru not_active IP Right Cessation
- 1997-06-10 UA UA98126594A patent/UA42106C2/uk unknown
- 1997-06-10 WO PCT/DE1997/001170 patent/WO1997048133A1/de not_active Ceased
- 1997-06-10 CN CNB971955042A patent/CN1156002C/zh not_active Expired - Fee Related
- 1997-06-10 BR BR9709717A patent/BR9709717A/pt not_active IP Right Cessation
- 1997-06-10 JP JP50106598A patent/JP3498800B2/ja not_active Expired - Fee Related
- 1997-06-10 DE DE59706247T patent/DE59706247D1/de not_active Expired - Fee Related
- 1997-06-10 ES ES97925908T patent/ES2171948T3/es not_active Expired - Lifetime
- 1997-06-10 EP EP97925908A patent/EP0904602B1/de not_active Expired - Lifetime
- 1997-06-10 AT AT97925908T patent/ATE212752T1/de not_active IP Right Cessation
- 1997-06-13 IN IN1123CA1997 patent/IN192422B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| UA42106C2 (uk) | 2001-10-15 |
| ES2171948T3 (es) | 2002-09-16 |
| JP3498800B2 (ja) | 2004-02-16 |
| EP0904602B1 (de) | 2002-01-30 |
| WO1997048133A1 (de) | 1997-12-18 |
| BR9709717A (pt) | 1999-08-10 |
| JP2000512045A (ja) | 2000-09-12 |
| EP0904602A1 (de) | 1999-03-31 |
| DE59706247D1 (de) | 2002-03-14 |
| IN192422B (enExample) | 2004-04-24 |
| ATE212752T1 (de) | 2002-02-15 |
| RU2191446C2 (ru) | 2002-10-20 |
| CN1222253A (zh) | 1999-07-07 |
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