ATE388488T1 - Halbleiterbauelement, halbleiterkörper und verfahren zu seiner herstellung - Google Patents
Halbleiterbauelement, halbleiterkörper und verfahren zu seiner herstellungInfo
- Publication number
- ATE388488T1 ATE388488T1 AT04715432T AT04715432T ATE388488T1 AT E388488 T1 ATE388488 T1 AT E388488T1 AT 04715432 T AT04715432 T AT 04715432T AT 04715432 T AT04715432 T AT 04715432T AT E388488 T1 ATE388488 T1 AT E388488T1
- Authority
- AT
- Austria
- Prior art keywords
- connection
- semiconductor body
- semiconductor
- connection regions
- regions
- Prior art date
Links
Classifications
-
- H10W72/90—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H10W70/415—
-
- H10W70/464—
-
- H10W70/657—
-
- H10W72/073—
-
- H10W72/075—
-
- H10W72/5445—
-
- H10W72/884—
-
- H10W72/932—
-
- H10W72/951—
-
- H10W74/00—
-
- H10W90/736—
-
- H10W90/756—
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03100568 | 2003-03-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE388488T1 true ATE388488T1 (de) | 2008-03-15 |
Family
ID=32946923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04715432T ATE388488T1 (de) | 2003-03-07 | 2004-02-27 | Halbleiterbauelement, halbleiterkörper und verfahren zu seiner herstellung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7196409B2 (de) |
| EP (1) | EP1604401B1 (de) |
| JP (1) | JP2006520102A (de) |
| CN (1) | CN100401510C (de) |
| AT (1) | ATE388488T1 (de) |
| DE (1) | DE602004012235T2 (de) |
| TW (1) | TW200501383A (de) |
| WO (1) | WO2004079822A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI254437B (en) * | 2003-12-31 | 2006-05-01 | Advanced Semiconductor Eng | Leadless package |
| JP5549066B2 (ja) * | 2008-09-30 | 2014-07-16 | 凸版印刷株式会社 | リードフレーム型基板とその製造方法、及び半導体装置 |
| US9175400B2 (en) * | 2009-10-28 | 2015-11-03 | Enthone Inc. | Immersion tin silver plating in electronics manufacture |
| TWI411051B (zh) * | 2009-12-02 | 2013-10-01 | 晨星半導體股份有限公司 | 封裝層疊方法與結構及其電路板系統 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498580A (en) * | 1978-01-20 | 1979-08-03 | Nec Corp | Field effect transistor |
| JPS57211771A (en) * | 1981-06-23 | 1982-12-25 | Nec Corp | Semiconductor element |
| US5583375A (en) * | 1990-06-11 | 1996-12-10 | Hitachi, Ltd. | Semiconductor device with lead structure within the planar area of the device |
| US5148265A (en) * | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
| JP3599813B2 (ja) * | 1995-03-15 | 2004-12-08 | 三洋電機株式会社 | 半導体装置 |
| WO1997048133A1 (de) * | 1996-06-14 | 1997-12-18 | Siemens Aktiengesellschaft | Verfahren zur herstellung eines trägerelements für halbleiterchips |
| US6127724A (en) * | 1996-10-31 | 2000-10-03 | Tessera, Inc. | Packaged microelectronic elements with enhanced thermal conduction |
| JP3462026B2 (ja) * | 1997-01-10 | 2003-11-05 | 岩手東芝エレクトロニクス株式会社 | 半導体装置の製造方法 |
| US5818107A (en) * | 1997-01-17 | 1998-10-06 | International Business Machines Corporation | Chip stacking by edge metallization |
| JP3011233B2 (ja) * | 1997-05-02 | 2000-02-21 | 日本電気株式会社 | 半導体パッケージ及びその半導体実装構造 |
| US6124150A (en) * | 1998-08-20 | 2000-09-26 | Micron Technology, Inc. | Transverse hybrid LOC package |
| JP2001223323A (ja) * | 2000-02-10 | 2001-08-17 | Mitsubishi Electric Corp | 半導体装置 |
-
2004
- 2004-02-27 AT AT04715432T patent/ATE388488T1/de not_active IP Right Cessation
- 2004-02-27 DE DE602004012235T patent/DE602004012235T2/de not_active Expired - Lifetime
- 2004-02-27 CN CNB2004800061014A patent/CN100401510C/zh not_active Expired - Lifetime
- 2004-02-27 JP JP2006506650A patent/JP2006520102A/ja not_active Withdrawn
- 2004-02-27 WO PCT/IB2004/050161 patent/WO2004079822A1/en not_active Ceased
- 2004-02-27 US US10/548,297 patent/US7196409B2/en not_active Expired - Lifetime
- 2004-02-27 EP EP04715432A patent/EP1604401B1/de not_active Expired - Lifetime
- 2004-03-04 TW TW093105717A patent/TW200501383A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US7196409B2 (en) | 2007-03-27 |
| TW200501383A (en) | 2005-01-01 |
| DE602004012235D1 (de) | 2008-04-17 |
| DE602004012235T2 (de) | 2009-03-19 |
| CN1757110A (zh) | 2006-04-05 |
| US20060202327A1 (en) | 2006-09-14 |
| JP2006520102A (ja) | 2006-08-31 |
| EP1604401A1 (de) | 2005-12-14 |
| EP1604401B1 (de) | 2008-03-05 |
| WO2004079822A1 (en) | 2004-09-16 |
| CN100401510C (zh) | 2008-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |