JPS57211771A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS57211771A
JPS57211771A JP9720481A JP9720481A JPS57211771A JP S57211771 A JPS57211771 A JP S57211771A JP 9720481 A JP9720481 A JP 9720481A JP 9720481 A JP9720481 A JP 9720481A JP S57211771 A JPS57211771 A JP S57211771A
Authority
JP
Japan
Prior art keywords
grounded electrode
surface side
substrate
container
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9720481A
Other languages
Japanese (ja)
Inventor
Toshio Kushiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9720481A priority Critical patent/JPS57211771A/en
Publication of JPS57211771A publication Critical patent/JPS57211771A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve high frequency operating characteristics by a method wherein a grounded electrode guided to the surface side of a semiconductor substrate is connected to a conductive film covering the rear and side of the substrate. CONSTITUTION:Elements such as bipolar transistor are formed at the surface side of a P<-> type Si substrate 1 and an insulating layer 7 formed by porosity is provided around the elements and a grounded electrode 8a at surface side is provided through an insulating layer 13. Next, after splitting each element section by using a metal film 8' provided on the rear as a mask, a conductive film 8b is formed on the whole rear including the side and the film 8b is connected to the grounded electrode 8. In this way, the grounded electrode is maintained at the same electric potential as that of the grounding terminal of a container in terms of high frequency even for any ground type of transistor element and can be fixed to the container.
JP9720481A 1981-06-23 1981-06-23 Semiconductor element Pending JPS57211771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9720481A JPS57211771A (en) 1981-06-23 1981-06-23 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9720481A JPS57211771A (en) 1981-06-23 1981-06-23 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS57211771A true JPS57211771A (en) 1982-12-25

Family

ID=14186078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9720481A Pending JPS57211771A (en) 1981-06-23 1981-06-23 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS57211771A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004079822A1 (en) * 2003-03-07 2004-09-16 Koninklijke Philips Electronics N.V. Semiconductor device, semiconductor body and method of manufacturing thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004079822A1 (en) * 2003-03-07 2004-09-16 Koninklijke Philips Electronics N.V. Semiconductor device, semiconductor body and method of manufacturing thereof

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