CN1155063C - 半导体存储元件的制法 - Google Patents
半导体存储元件的制法 Download PDFInfo
- Publication number
- CN1155063C CN1155063C CNB008086613A CN00808661A CN1155063C CN 1155063 C CN1155063 C CN 1155063C CN B008086613 A CNB008086613 A CN B008086613A CN 00808661 A CN00808661 A CN 00808661A CN 1155063 C CN1155063 C CN 1155063C
- Authority
- CN
- China
- Prior art keywords
- barrier layer
- layer
- barrier
- hard mask
- structuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims abstract 24
- 229910004541 SiN Inorganic materials 0.000 claims abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 7
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000012790 adhesive layer Substances 0.000 abstract 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000003672 processing method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NJWIMFZLESWFIM-UHFFFAOYSA-N 2-(chloromethyl)pyridine Chemical compound ClCC1=CC=CC=N1 NJWIMFZLESWFIM-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19926501.1 | 1999-06-10 | ||
DE19926501A DE19926501A1 (de) | 1999-06-10 | 1999-06-10 | Verfahren zur Herstellung eines Halbleiterspeicherbauelements |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1354887A CN1354887A (zh) | 2002-06-19 |
CN1155063C true CN1155063C (zh) | 2004-06-23 |
Family
ID=7910811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008086613A Expired - Fee Related CN1155063C (zh) | 1999-06-10 | 2000-06-09 | 半导体存储元件的制法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6566220B2 (zh) |
EP (1) | EP1198828B1 (zh) |
JP (1) | JP3798692B2 (zh) |
KR (1) | KR100463943B1 (zh) |
CN (1) | CN1155063C (zh) |
DE (2) | DE19926501A1 (zh) |
TW (1) | TW477039B (zh) |
WO (1) | WO2000077841A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19950540B4 (de) * | 1999-10-20 | 2005-07-21 | Infineon Technologies Ag | Verfahren zur Herstellung einer Kondensator-Elektrode mit Barrierestruktur |
DE10022656B4 (de) * | 2000-04-28 | 2006-07-06 | Infineon Technologies Ag | Verfahren zum Entfernen von Strukturen |
DE10105673C2 (de) * | 2001-02-08 | 2003-04-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines nach dem Stackprinzip aufgebauten integrierten ferroelektrischen Halbleiterspeichers oder eines DRAM-Halbleiters mit Hoch-epsilon-Material |
DE10105997C1 (de) * | 2001-02-09 | 2002-07-25 | Infineon Technologies Ag | Verfahren zur Herstellung ferroelektrischer Kondensatoren und integrierter Halbleiterspeicherbausteine |
DE10109328A1 (de) * | 2001-02-27 | 2002-09-12 | Infineon Technologies Ag | Verfahren zur Entfernung einer Maskenschicht von einem Halbleitersubstrat |
DE10112276C2 (de) * | 2001-03-14 | 2003-02-06 | Infineon Technologies Ag | Verfahren zur Herstellung eines integrierten ferroelektrischen Halbleiterspeichers und integrierter ferroelektrischer Halbleiterspeicher |
US7022530B2 (en) * | 2001-04-03 | 2006-04-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
DE10118422B4 (de) * | 2001-04-12 | 2007-07-12 | Infineon Technologies Ag | Verfahren zur Herstellung einer strukturierten metallhaltigen Schicht auf einem Halbleiterwafer |
KR100846367B1 (ko) * | 2002-06-29 | 2008-07-15 | 주식회사 하이닉스반도체 | 강유전체 메모리 소자의 제조 방법 |
US7270884B2 (en) | 2003-04-07 | 2007-09-18 | Infineon Technologies Ag | Adhesion layer for Pt on SiO2 |
DE10334124A1 (de) * | 2003-07-25 | 2005-02-17 | Infineon Technologies Ag | Haftung von Strukturen aus schlecht haftenden Materialien |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5335138A (en) * | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
US5381302A (en) * | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
US5566045A (en) * | 1994-08-01 | 1996-10-15 | Texas Instruments, Inc. | High-dielectric-constant material electrodes comprising thin platinum layers |
US5464786A (en) * | 1994-10-24 | 1995-11-07 | Micron Technology, Inc. | Method for forming a capacitor having recessed lateral reaction barrier layer edges |
US5597756A (en) * | 1995-06-21 | 1997-01-28 | Micron Technology, Inc. | Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack |
US5518948A (en) * | 1995-09-27 | 1996-05-21 | Micron Technology, Inc. | Method of making cup-shaped DRAM capacitor having an inwardly overhanging lip |
JPH10242422A (ja) * | 1997-02-28 | 1998-09-11 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US6262478B1 (en) * | 1997-04-08 | 2001-07-17 | Amitec-Advanced Multilayer Interconnect Technologies Ltd. | Electronic interconnect structure and method for manufacturing it |
KR100230422B1 (ko) * | 1997-04-25 | 1999-11-15 | 윤종용 | 반도체장치의 커패시터 제조방법 |
US5976928A (en) * | 1997-11-20 | 1999-11-02 | Advanced Technology Materials, Inc. | Chemical mechanical polishing of FeRAM capacitors |
US5913129A (en) * | 1997-11-27 | 1999-06-15 | United Microelectronics Corp. | Method of fabricating a capacitor structure for a dynamic random access memory |
KR100285066B1 (ko) * | 1997-12-06 | 2001-04-02 | 윤종용 | 고유전체 물질을 갖는 커패시터의 형성방법 |
TW392282B (en) * | 1998-01-20 | 2000-06-01 | Nanya Technology Corp | Manufacturing method for cylindrical capacitor |
US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
KR100268447B1 (ko) * | 1998-08-07 | 2000-10-16 | 윤종용 | 커패시터 및 그의 제조 방법 |
US5907782A (en) * | 1998-08-15 | 1999-05-25 | Acer Semiconductor Manufacturing Inc. | Method of forming a multiple fin-pillar capacitor for a high density dram cell |
US6071809A (en) * | 1998-09-25 | 2000-06-06 | Rockwell Semiconductor Systems, Inc. | Methods for forming high-performing dual-damascene interconnect structures |
US6235636B1 (en) * | 1999-04-20 | 2001-05-22 | Advanced Micro Devices, Inc. | Resist removal by polishing |
-
1999
- 1999-06-10 DE DE19926501A patent/DE19926501A1/de not_active Withdrawn
-
2000
- 2000-06-09 CN CNB008086613A patent/CN1155063C/zh not_active Expired - Fee Related
- 2000-06-09 DE DE50014668T patent/DE50014668D1/de not_active Expired - Lifetime
- 2000-06-09 WO PCT/DE2000/001896 patent/WO2000077841A1/de active IP Right Grant
- 2000-06-09 EP EP00945635A patent/EP1198828B1/de not_active Expired - Lifetime
- 2000-06-09 JP JP2001503220A patent/JP3798692B2/ja not_active Expired - Fee Related
- 2000-06-09 KR KR10-2001-7015801A patent/KR100463943B1/ko not_active IP Right Cessation
- 2000-12-02 TW TW089111290A patent/TW477039B/zh not_active IP Right Cessation
-
2001
- 2001-12-10 US US10/013,234 patent/US6566220B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1198828A1 (de) | 2002-04-24 |
WO2000077841A1 (de) | 2000-12-21 |
JP3798692B2 (ja) | 2006-07-19 |
KR20020020908A (ko) | 2002-03-16 |
US6566220B2 (en) | 2003-05-20 |
DE50014668D1 (de) | 2007-10-31 |
CN1354887A (zh) | 2002-06-19 |
EP1198828B1 (de) | 2007-09-19 |
TW477039B (en) | 2002-02-21 |
KR100463943B1 (ko) | 2004-12-30 |
JP2003502842A (ja) | 2003-01-21 |
US20020115253A1 (en) | 2002-08-22 |
DE19926501A1 (de) | 2000-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120918 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160118 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040623 Termination date: 20160609 |
|
CF01 | Termination of patent right due to non-payment of annual fee |