CN114959599A - 磁记录膜形成用溅射靶及其制造方法 - Google Patents
磁记录膜形成用溅射靶及其制造方法 Download PDFInfo
- Publication number
- CN114959599A CN114959599A CN202210426425.3A CN202210426425A CN114959599A CN 114959599 A CN114959599 A CN 114959599A CN 202210426425 A CN202210426425 A CN 202210426425A CN 114959599 A CN114959599 A CN 114959599A
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- Prior art keywords
- powder
- sputtering target
- sputtering
- mol
- alloy
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000005291 magnetic effect Effects 0.000 title abstract description 47
- 239000002245 particle Substances 0.000 claims abstract description 129
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 90
- 239000000956 alloy Substances 0.000 claims abstract description 90
- 238000004544 sputter deposition Methods 0.000 claims abstract description 75
- 229910015371 AuCu Inorganic materials 0.000 claims abstract description 51
- 229910005335 FePt Inorganic materials 0.000 claims abstract description 51
- 239000000843 powder Substances 0.000 claims description 304
- 239000002994 raw material Substances 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 27
- 229910052726 zirconium Inorganic materials 0.000 claims description 26
- 238000005245 sintering Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 238000005275 alloying Methods 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 238000010587 phase diagram Methods 0.000 claims description 3
- 229910002708 Au–Cu Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 8
- 229910052799 carbon Inorganic materials 0.000 description 23
- 239000011812 mixed powder Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 22
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 22
- 238000007088 Archimedes method Methods 0.000 description 21
- 239000012071 phase Substances 0.000 description 20
- 238000003756 stirring Methods 0.000 description 16
- 238000001755 magnetron sputter deposition Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000013019 agitation Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000470 constituent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000007731 hot pressing Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 229910000905 alloy phase Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910016551 CuPt Inorganic materials 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000006249 magnetic particle Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 101100434911 Mus musculus Angpt1 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002490 spark plasma sintering Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014197407 | 2014-09-26 | ||
JP2014-197407 | 2014-09-26 | ||
CN201580051739.8A CN107075665A (zh) | 2014-09-26 | 2015-09-18 | 磁记录膜形成用溅射靶及其制造方法 |
PCT/JP2015/076628 WO2016047578A1 (ja) | 2014-09-26 | 2015-09-18 | 磁気記録膜形成用スパッタリングターゲット及びその製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580051739.8A Division CN107075665A (zh) | 2014-09-26 | 2015-09-18 | 磁记录膜形成用溅射靶及其制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114959599A true CN114959599A (zh) | 2022-08-30 |
Family
ID=55581105
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210426425.3A Pending CN114959599A (zh) | 2014-09-26 | 2015-09-18 | 磁记录膜形成用溅射靶及其制造方法 |
CN201580051739.8A Pending CN107075665A (zh) | 2014-09-26 | 2015-09-18 | 磁记录膜形成用溅射靶及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580051739.8A Pending CN107075665A (zh) | 2014-09-26 | 2015-09-18 | 磁记录膜形成用溅射靶及其制造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6084711B2 (ja) |
CN (2) | CN114959599A (ja) |
MY (1) | MY179890A (ja) |
SG (1) | SG11201701838XA (ja) |
WO (1) | WO2016047578A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI636149B (zh) * | 2016-09-12 | 2018-09-21 | 日商Jx金屬股份有限公司 | 強磁性材濺鍍靶 |
JP7057692B2 (ja) * | 2018-03-20 | 2022-04-20 | 田中貴金属工業株式会社 | スパッタリングターゲット用Fe-Pt-酸化物-BN系焼結体 |
JP6878349B2 (ja) * | 2018-04-27 | 2021-05-26 | 田中貴金属工業株式会社 | C含有スパッタリングターゲット及びその製造方法 |
TWI702294B (zh) * | 2018-07-31 | 2020-08-21 | 日商田中貴金屬工業股份有限公司 | 磁氣記錄媒體用濺鍍靶 |
JP7104001B2 (ja) * | 2019-06-28 | 2022-07-20 | 田中貴金属工業株式会社 | Fe-Pt-BN系スパッタリングターゲット及びその製造方法 |
WO2021010019A1 (ja) * | 2019-07-12 | 2021-01-21 | 田中貴金属工業株式会社 | Fe-Pt-BN系スパッタリングターゲット及びその製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103038388A (zh) * | 2010-09-03 | 2013-04-10 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶 |
WO2014034390A1 (ja) * | 2012-08-31 | 2014-03-06 | Jx日鉱日石金属株式会社 | Fe系磁性材焼結体 |
WO2014045744A1 (ja) * | 2012-09-21 | 2014-03-27 | Jx日鉱日石金属株式会社 | Fe-Pt系磁性材焼結体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9945026B2 (en) * | 2010-12-20 | 2018-04-17 | Jx Nippon Mining & Metals Corporation | Fe-Pt-based sputtering target with dispersed C grains |
JP5041262B2 (ja) * | 2011-01-31 | 2012-10-03 | 三菱マテリアル株式会社 | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
JP5041261B2 (ja) * | 2011-01-31 | 2012-10-03 | 三菱マテリアル株式会社 | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
US9683284B2 (en) * | 2011-03-30 | 2017-06-20 | Jx Nippon Mining & Metals Corporation | Sputtering target for magnetic recording film |
CN103930592B (zh) * | 2011-12-22 | 2016-03-16 | 吉坤日矿日石金属株式会社 | 分散有C粒子的Fe-Pt型溅射靶 |
MY167825A (en) * | 2012-06-18 | 2018-09-26 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film |
SG11201404072YA (en) * | 2012-07-20 | 2014-10-30 | Jx Nippon Mining & Metals Corp | Sputtering target for forming magnetic recording film and process for producing same |
JP6366095B2 (ja) * | 2014-07-29 | 2018-08-01 | 株式会社フルヤ金属 | 磁気記録媒体用スパッタリングターゲット |
-
2015
- 2015-09-18 CN CN202210426425.3A patent/CN114959599A/zh active Pending
- 2015-09-18 WO PCT/JP2015/076628 patent/WO2016047578A1/ja active Application Filing
- 2015-09-18 JP JP2015560124A patent/JP6084711B2/ja active Active
- 2015-09-18 CN CN201580051739.8A patent/CN107075665A/zh active Pending
- 2015-09-18 MY MYPI2017701004A patent/MY179890A/en unknown
- 2015-09-18 SG SG11201701838XA patent/SG11201701838XA/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103038388A (zh) * | 2010-09-03 | 2013-04-10 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶 |
WO2014034390A1 (ja) * | 2012-08-31 | 2014-03-06 | Jx日鉱日石金属株式会社 | Fe系磁性材焼結体 |
WO2014045744A1 (ja) * | 2012-09-21 | 2014-03-27 | Jx日鉱日石金属株式会社 | Fe-Pt系磁性材焼結体 |
Also Published As
Publication number | Publication date |
---|---|
MY179890A (en) | 2020-11-18 |
JP6084711B2 (ja) | 2017-02-22 |
SG11201701838XA (en) | 2017-04-27 |
JPWO2016047578A1 (ja) | 2017-04-27 |
WO2016047578A1 (ja) | 2016-03-31 |
CN107075665A (zh) | 2017-08-18 |
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