CN1148621C - 可进行快速芯片内电压产生的集成电路和集成电路存储器 - Google Patents

可进行快速芯片内电压产生的集成电路和集成电路存储器 Download PDF

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Publication number
CN1148621C
CN1148621C CNB988143682A CN98814368A CN1148621C CN 1148621 C CN1148621 C CN 1148621C CN B988143682 A CNB988143682 A CN B988143682A CN 98814368 A CN98814368 A CN 98814368A CN 1148621 C CN1148621 C CN 1148621C
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China
Prior art keywords
circuit
voltage
boost
signal
integrated circuit
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Expired - Lifetime
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CNB988143682A
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English (en)
Chinese (zh)
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CN1327552A (zh
Inventor
张坤龙
洪俊雄
陈耕晖
何天行
李一龙
萧增辉
万瑞霖
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Macronix International Co Ltd
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Macronix International Co Ltd
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Publication of CN1327552A publication Critical patent/CN1327552A/zh
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
CNB988143682A 1998-11-18 1998-11-18 可进行快速芯片内电压产生的集成电路和集成电路存储器 Expired - Lifetime CN1148621C (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/024766 WO2000029919A1 (en) 1998-11-18 1998-11-18 Rapid on chip voltage generation for low power integrated circuits

Publications (2)

Publication Number Publication Date
CN1327552A CN1327552A (zh) 2001-12-19
CN1148621C true CN1148621C (zh) 2004-05-05

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Family Applications (1)

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CNB988143682A Expired - Lifetime CN1148621C (zh) 1998-11-18 1998-11-18 可进行快速芯片内电压产生的集成电路和集成电路存储器

Country Status (5)

Country Link
EP (1) EP1151365B1 (enExample)
JP (1) JP4394835B2 (enExample)
CN (1) CN1148621C (enExample)
DE (1) DE69823888T2 (enExample)
WO (1) WO2000029919A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646950B2 (en) * 2001-04-30 2003-11-11 Fujitsu Limited High speed decoder for flash memory
WO2004109711A1 (ja) * 2003-06-05 2004-12-16 Fujitsu Limited 冗長メモリのブースタ回路を有する半導体メモリ
CN1323434C (zh) * 2003-09-02 2007-06-27 台湾积体电路制造股份有限公司 整合闪存与高电压组件的制造方法
US7466620B2 (en) * 2006-01-04 2008-12-16 Baker Mohammad System and method for low power wordline logic for a memory
US7529117B2 (en) * 2007-03-07 2009-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Design solutions for integrated circuits with triple gate oxides
CN101620886B (zh) * 2008-07-02 2012-01-25 中芯国际集成电路制造(上海)有限公司 用于闪存器件的字线增压器
JP5808937B2 (ja) * 2011-04-20 2015-11-10 ラピスセミコンダクタ株式会社 半導体メモリの内部電源電圧生成回路及び内部電源電圧生成方法
CN108958639B (zh) * 2017-05-19 2021-07-06 华邦电子股份有限公司 快闪存储器存储装置
JP2021149999A (ja) 2020-03-23 2021-09-27 キオクシア株式会社 半導体記憶装置
US12197264B2 (en) * 2020-11-10 2025-01-14 Micron Technology, Inc. Power management for a memory device
CN115308467B (zh) * 2021-05-07 2025-12-23 脸萌有限公司 集成电路内部电压检测电路、检测方法以及集成电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910004737B1 (ko) * 1988-12-19 1991-07-10 삼성전자 주식회사 백바이어스전압 발생회로
KR0172337B1 (ko) * 1995-11-13 1999-03-30 김광호 반도체 메모리장치의 내부승압전원 발생회로
US5708387A (en) * 1995-11-17 1998-01-13 Advanced Micro Devices, Inc. Fast 3-state booster-circuit
JPH09320267A (ja) * 1996-05-28 1997-12-12 Oki Micro Design Miyazaki:Kk 昇圧回路の駆動方法および昇圧回路

Also Published As

Publication number Publication date
HK1042954A1 (en) 2002-08-30
DE69823888D1 (de) 2004-06-17
EP1151365B1 (en) 2004-05-12
DE69823888T2 (de) 2004-10-21
CN1327552A (zh) 2001-12-19
WO2000029919A1 (en) 2000-05-25
JP4394835B2 (ja) 2010-01-06
EP1151365A4 (en) 2002-01-30
JP2003517719A (ja) 2003-05-27
EP1151365A1 (en) 2001-11-07

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