EP1151365A4 - Rapid on chip voltage generation for low power integrated circuits - Google Patents

Rapid on chip voltage generation for low power integrated circuits

Info

Publication number
EP1151365A4
EP1151365A4 EP98960305A EP98960305A EP1151365A4 EP 1151365 A4 EP1151365 A4 EP 1151365A4 EP 98960305 A EP98960305 A EP 98960305A EP 98960305 A EP98960305 A EP 98960305A EP 1151365 A4 EP1151365 A4 EP 1151365A4
Authority
EP
European Patent Office
Prior art keywords
rapid
low power
integrated circuits
voltage generation
power integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98960305A
Other languages
German (de)
French (fr)
Other versions
EP1151365A1 (en
EP1151365B1 (en
Inventor
Kuen-Long Chang
Chun-Hsiung Hung
Ken-Hui Chen
Tien-Shin Ho
I-Long Lee
Tzeng-Hei Shiau
Ray-Lin Wan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of EP1151365A1 publication Critical patent/EP1151365A1/en
Publication of EP1151365A4 publication Critical patent/EP1151365A4/en
Application granted granted Critical
Publication of EP1151365B1 publication Critical patent/EP1151365B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
EP98960305A 1998-11-18 1998-11-18 Rapid on chip voltage generation for low power integrated circuits Expired - Lifetime EP1151365B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/024766 WO2000029919A1 (en) 1998-11-18 1998-11-18 Rapid on chip voltage generation for low power integrated circuits

Publications (3)

Publication Number Publication Date
EP1151365A1 EP1151365A1 (en) 2001-11-07
EP1151365A4 true EP1151365A4 (en) 2002-01-30
EP1151365B1 EP1151365B1 (en) 2004-05-12

Family

ID=22268334

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98960305A Expired - Lifetime EP1151365B1 (en) 1998-11-18 1998-11-18 Rapid on chip voltage generation for low power integrated circuits

Country Status (6)

Country Link
EP (1) EP1151365B1 (en)
JP (1) JP4394835B2 (en)
CN (1) CN1148621C (en)
DE (1) DE69823888T2 (en)
HK (1) HK1042954A1 (en)
WO (1) WO2000029919A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646950B2 (en) * 2001-04-30 2003-11-11 Fujitsu Limited High speed decoder for flash memory
JP4142685B2 (en) * 2003-06-05 2008-09-03 スパンション エルエルシー Semiconductor memory having a booster circuit for redundant memory
CN1323434C (en) * 2003-09-02 2007-06-27 台湾积体电路制造股份有限公司 Method for mfg. intergration flash memory and high-voltage assembly
US7466620B2 (en) * 2006-01-04 2008-12-16 Baker Mohammad System and method for low power wordline logic for a memory
US7529117B2 (en) * 2007-03-07 2009-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Design solutions for integrated circuits with triple gate oxides
CN101620886B (en) * 2008-07-02 2012-01-25 中芯国际集成电路制造(上海)有限公司 Word line supercharger for flash memory
JP5808937B2 (en) * 2011-04-20 2015-11-10 ラピスセミコンダクタ株式会社 Internal power supply voltage generation circuit and internal power supply voltage generation method for semiconductor memory
CN108958639B (en) * 2017-05-19 2021-07-06 华邦电子股份有限公司 Flash memory storage device
JP2021149999A (en) 2020-03-23 2021-09-27 キオクシア株式会社 Semiconductor storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0810720A2 (en) * 1996-05-28 1997-12-03 Oki Electric Industry Co., Ltd. Booster circuit and method of driving the same
US5708387A (en) * 1995-11-17 1998-01-13 Advanced Micro Devices, Inc. Fast 3-state booster-circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910004737B1 (en) * 1988-12-19 1991-07-10 삼성전자 주식회사 Back bias voltage generating circuit
KR0172337B1 (en) * 1995-11-13 1999-03-30 김광호 Semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5708387A (en) * 1995-11-17 1998-01-13 Advanced Micro Devices, Inc. Fast 3-state booster-circuit
EP0810720A2 (en) * 1996-05-28 1997-12-03 Oki Electric Industry Co., Ltd. Booster circuit and method of driving the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO0029919A1 *

Also Published As

Publication number Publication date
WO2000029919A1 (en) 2000-05-25
EP1151365A1 (en) 2001-11-07
CN1148621C (en) 2004-05-05
CN1327552A (en) 2001-12-19
JP4394835B2 (en) 2010-01-06
HK1042954A1 (en) 2002-08-30
JP2003517719A (en) 2003-05-27
EP1151365B1 (en) 2004-05-12
DE69823888T2 (en) 2004-10-21
DE69823888D1 (en) 2004-06-17

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