CN1148621C - 可进行快速芯片内电压产生的集成电路和集成电路存储器 - Google Patents

可进行快速芯片内电压产生的集成电路和集成电路存储器 Download PDF

Info

Publication number
CN1148621C
CN1148621C CNB988143682A CN98814368A CN1148621C CN 1148621 C CN1148621 C CN 1148621C CN B988143682 A CNB988143682 A CN B988143682A CN 98814368 A CN98814368 A CN 98814368A CN 1148621 C CN1148621 C CN 1148621C
Authority
CN
China
Prior art keywords
circuit
voltage
signal
integrated circuit
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB988143682A
Other languages
English (en)
Chinese (zh)
Other versions
CN1327552A (zh
Inventor
张坤龙
洪俊雄
陈耕晖
何天行
李一龙
萧增辉
万瑞霖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of CN1327552A publication Critical patent/CN1327552A/zh
Application granted granted Critical
Publication of CN1148621C publication Critical patent/CN1148621C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
CNB988143682A 1998-11-18 1998-11-18 可进行快速芯片内电压产生的集成电路和集成电路存储器 Expired - Lifetime CN1148621C (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/024766 WO2000029919A1 (en) 1998-11-18 1998-11-18 Rapid on chip voltage generation for low power integrated circuits

Publications (2)

Publication Number Publication Date
CN1327552A CN1327552A (zh) 2001-12-19
CN1148621C true CN1148621C (zh) 2004-05-05

Family

ID=22268334

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB988143682A Expired - Lifetime CN1148621C (zh) 1998-11-18 1998-11-18 可进行快速芯片内电压产生的集成电路和集成电路存储器

Country Status (6)

Country Link
EP (1) EP1151365B1 (bg)
JP (1) JP4394835B2 (bg)
CN (1) CN1148621C (bg)
DE (1) DE69823888T2 (bg)
HK (1) HK1042954A1 (bg)
WO (1) WO2000029919A1 (bg)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646950B2 (en) * 2001-04-30 2003-11-11 Fujitsu Limited High speed decoder for flash memory
WO2004109711A1 (ja) * 2003-06-05 2004-12-16 Fujitsu Limited 冗長メモリのブースタ回路を有する半導体メモリ
CN1323434C (zh) * 2003-09-02 2007-06-27 台湾积体电路制造股份有限公司 整合闪存与高电压组件的制造方法
US7466620B2 (en) * 2006-01-04 2008-12-16 Baker Mohammad System and method for low power wordline logic for a memory
US7529117B2 (en) * 2007-03-07 2009-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Design solutions for integrated circuits with triple gate oxides
CN101620886B (zh) * 2008-07-02 2012-01-25 中芯国际集成电路制造(上海)有限公司 用于闪存器件的字线增压器
JP5808937B2 (ja) * 2011-04-20 2015-11-10 ラピスセミコンダクタ株式会社 半導体メモリの内部電源電圧生成回路及び内部電源電圧生成方法
CN108958639B (zh) * 2017-05-19 2021-07-06 华邦电子股份有限公司 快闪存储器存储装置
JP2021149999A (ja) * 2020-03-23 2021-09-27 キオクシア株式会社 半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910004737B1 (ko) * 1988-12-19 1991-07-10 삼성전자 주식회사 백바이어스전압 발생회로
KR0172337B1 (ko) * 1995-11-13 1999-03-30 김광호 반도체 메모리장치의 내부승압전원 발생회로
US5708387A (en) * 1995-11-17 1998-01-13 Advanced Micro Devices, Inc. Fast 3-state booster-circuit
JPH09320267A (ja) * 1996-05-28 1997-12-12 Oki Micro Design Miyazaki:Kk 昇圧回路の駆動方法および昇圧回路

Also Published As

Publication number Publication date
WO2000029919A1 (en) 2000-05-25
HK1042954A1 (en) 2002-08-30
JP2003517719A (ja) 2003-05-27
DE69823888D1 (de) 2004-06-17
EP1151365A4 (en) 2002-01-30
DE69823888T2 (de) 2004-10-21
EP1151365B1 (en) 2004-05-12
JP4394835B2 (ja) 2010-01-06
EP1151365A1 (en) 2001-11-07
CN1327552A (zh) 2001-12-19

Similar Documents

Publication Publication Date Title
CN100392763C (zh) 具有升压限制的升压电路
CN1215563C (zh) 半导体存储器与半导体存储器控制方法
CN1118070C (zh) 非易失性半导体存储器
JP4094104B2 (ja) 半導体集積回路装置および記憶装置
US8351265B2 (en) Power supplies in flash memory devices and systems
US6842383B2 (en) Method and circuit for operating a memory cell using a single charge pump
US6226224B1 (en) Semiconductor integrated circuit device and storage device
CN1023623C (zh) 用于半导体存储器的传感放大器驱动电路
CN1110818C (zh) 具有内电源电路的半导体集成电路器件
CN1497605A (zh) 控制内部电源电压的加电斜率的内部电压转换器方案
CN1122943A (zh) 半导体存储器件的增压电路
CN1975927A (zh) 相可变存储器件及其读取方法
CN1148621C (zh) 可进行快速芯片内电压产生的集成电路和集成电路存储器
CN1707691A (zh) 具有电源启动顺序的半导体集成电路器件
US20150194193A1 (en) Memory and reading method thereof, and circuit for reading memory
CN1190783A (zh) 半导体存储装置
US6255900B1 (en) Rapid on chip voltage generation for low power integrated circuits
CN1695291A (zh) 半导体集成电路装置
CN101114524A (zh) 升压电路
US6229740B1 (en) Voltage generation circuit having boost function and capable of preventing output voltage from exceeding prescribed value, and semiconductor memory device provided therewith
CN1237767A (zh) 半导体存储器件
CN101079616A (zh) 产生具有稳定周期的振荡信号的振荡器电路
CN1229994A (zh) 半导体存储器件
CN1516189A (zh) 半导体存储器件
CN1431664A (zh) 半导体存储装置

Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination
PB01 Publication
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1042954

Country of ref document: HK

CX01 Expiry of patent term

Granted publication date: 20040505

CX01 Expiry of patent term