CN114342087A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN114342087A
CN114342087A CN202080062127.XA CN202080062127A CN114342087A CN 114342087 A CN114342087 A CN 114342087A CN 202080062127 A CN202080062127 A CN 202080062127A CN 114342087 A CN114342087 A CN 114342087A
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CN
China
Prior art keywords
region
fwd
igbt
layer
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080062127.XA
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English (en)
Chinese (zh)
Inventor
宫田征典
利田祐麻
药师川裕贵
妹尾贤
细川博司
永井昂哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN114342087A publication Critical patent/CN114342087A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202080062127.XA 2019-09-04 2020-09-02 半导体装置 Pending CN114342087A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-161392 2019-09-04
JP2019161392A JP7172920B2 (ja) 2019-09-04 2019-09-04 半導体装置
PCT/JP2020/033285 WO2021045116A1 (ja) 2019-09-04 2020-09-02 半導体装置

Publications (1)

Publication Number Publication Date
CN114342087A true CN114342087A (zh) 2022-04-12

Family

ID=74847394

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080062127.XA Pending CN114342087A (zh) 2019-09-04 2020-09-02 半导体装置

Country Status (4)

Country Link
US (1) US12191381B2 (enExample)
JP (1) JP7172920B2 (enExample)
CN (1) CN114342087A (enExample)
WO (1) WO2021045116A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7517218B2 (ja) * 2021-03-24 2024-07-17 株式会社デンソー 半導体装置
JP7596930B2 (ja) * 2021-05-26 2024-12-10 株式会社デンソー 半導体装置
JP2024127086A (ja) * 2023-03-08 2024-09-20 株式会社デンソー 半導体装置
JP2024148755A (ja) * 2023-04-06 2024-10-18 ミネベアパワーデバイス株式会社 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141202A (ja) * 2007-12-07 2009-06-25 Toyota Motor Corp 半導体装置とその半導体装置を備えている給電装置の駆動方法
JP2009272550A (ja) * 2008-05-09 2009-11-19 Toyota Motor Corp 半導体装置
US20160260710A1 (en) * 2015-03-06 2016-09-08 Toyota Jidosha Kabushiki Kaisha Semiconductor device
CN106206698A (zh) * 2015-05-27 2016-12-07 丰田自动车株式会社 反向导通绝缘栅双极性晶体管
CN107039438A (zh) * 2015-09-17 2017-08-11 丰田自动车株式会社 半导体装置
CN110034113A (zh) * 2018-01-11 2019-07-19 丰田自动车株式会社 半导体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919121B2 (ja) * 1975-10-31 1984-05-02 タイトウ カブシキガイシヤ シンキノヤクリカツセイタトウブンカイブツノ セイゾウホウホウ
EP2442355B1 (en) 2009-06-11 2014-04-23 Toyota Jidosha Kabushiki Kaisha Semiconductor device
CN107068733B (zh) 2011-07-27 2020-08-11 丰田自动车株式会社 半导体器件
JP4947230B2 (ja) 2011-08-29 2012-06-06 トヨタ自動車株式会社 半導体装置
DE112012007249B4 (de) 2012-12-20 2021-02-04 Denso Corporation Halbleitervorrichtung
JP6443267B2 (ja) 2015-08-28 2018-12-26 株式会社デンソー 半導体装置
JP6531589B2 (ja) * 2015-09-17 2019-06-19 株式会社デンソー 半導体装置
JP6589817B2 (ja) 2016-10-26 2019-10-16 株式会社デンソー 半導体装置
CN109891595B (zh) * 2017-05-31 2022-05-24 富士电机株式会社 半导体装置
JP6911941B2 (ja) 2017-12-14 2021-07-28 富士電機株式会社 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141202A (ja) * 2007-12-07 2009-06-25 Toyota Motor Corp 半導体装置とその半導体装置を備えている給電装置の駆動方法
JP2009272550A (ja) * 2008-05-09 2009-11-19 Toyota Motor Corp 半導体装置
US20160260710A1 (en) * 2015-03-06 2016-09-08 Toyota Jidosha Kabushiki Kaisha Semiconductor device
CN106206698A (zh) * 2015-05-27 2016-12-07 丰田自动车株式会社 反向导通绝缘栅双极性晶体管
CN107039438A (zh) * 2015-09-17 2017-08-11 丰田自动车株式会社 半导体装置
CN110034113A (zh) * 2018-01-11 2019-07-19 丰田自动车株式会社 半导体装置

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WO2021045116A1 (ja) 2021-03-11
US12191381B2 (en) 2025-01-07
JP2021040071A (ja) 2021-03-11
US20220181471A1 (en) 2022-06-09
JP7172920B2 (ja) 2022-11-16

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