JP7172920B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7172920B2
JP7172920B2 JP2019161392A JP2019161392A JP7172920B2 JP 7172920 B2 JP7172920 B2 JP 7172920B2 JP 2019161392 A JP2019161392 A JP 2019161392A JP 2019161392 A JP2019161392 A JP 2019161392A JP 7172920 B2 JP7172920 B2 JP 7172920B2
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JP
Japan
Prior art keywords
region
fwd
igbt
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019161392A
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English (en)
Japanese (ja)
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JP2021040071A (ja
JP2021040071A5 (enExample
Inventor
征典 宮田
祐麻 利田
裕貴 薬師川
賢 妹尾
博司 細川
昂哉 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2019161392A priority Critical patent/JP7172920B2/ja
Priority to PCT/JP2020/033285 priority patent/WO2021045116A1/ja
Priority to CN202080062127.XA priority patent/CN114342087A/zh
Publication of JP2021040071A publication Critical patent/JP2021040071A/ja
Publication of JP2021040071A5 publication Critical patent/JP2021040071A5/ja
Priority to US17/682,395 priority patent/US12191381B2/en
Application granted granted Critical
Publication of JP7172920B2 publication Critical patent/JP7172920B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2019161392A 2019-09-04 2019-09-04 半導体装置 Active JP7172920B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019161392A JP7172920B2 (ja) 2019-09-04 2019-09-04 半導体装置
PCT/JP2020/033285 WO2021045116A1 (ja) 2019-09-04 2020-09-02 半導体装置
CN202080062127.XA CN114342087A (zh) 2019-09-04 2020-09-02 半导体装置
US17/682,395 US12191381B2 (en) 2019-09-04 2022-02-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019161392A JP7172920B2 (ja) 2019-09-04 2019-09-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2021040071A JP2021040071A (ja) 2021-03-11
JP2021040071A5 JP2021040071A5 (enExample) 2021-12-23
JP7172920B2 true JP7172920B2 (ja) 2022-11-16

Family

ID=74847394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019161392A Active JP7172920B2 (ja) 2019-09-04 2019-09-04 半導体装置

Country Status (4)

Country Link
US (1) US12191381B2 (enExample)
JP (1) JP7172920B2 (enExample)
CN (1) CN114342087A (enExample)
WO (1) WO2021045116A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7517218B2 (ja) * 2021-03-24 2024-07-17 株式会社デンソー 半導体装置
JP7596930B2 (ja) * 2021-05-26 2024-12-10 株式会社デンソー 半導体装置
JP2024127086A (ja) * 2023-03-08 2024-09-20 株式会社デンソー 半導体装置
JP2024148755A (ja) * 2023-04-06 2024-10-18 ミネベアパワーデバイス株式会社 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010143288A1 (ja) 2009-06-11 2010-12-16 トヨタ自動車株式会社 半導体装置
JP5919121B2 (ja) 2011-07-27 2016-05-18 株式会社豊田中央研究所 ダイオードおよび半導体装置
JP2016225345A (ja) 2015-05-27 2016-12-28 トヨタ自動車株式会社 逆導通ｉｇｂｔ
JP2017059725A (ja) 2015-09-17 2017-03-23 トヨタ自動車株式会社 半導体装置
JP2018073911A (ja) 2016-10-26 2018-05-10 株式会社デンソー 半導体装置
WO2019117248A1 (ja) 2017-12-14 2019-06-20 富士電機株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919121B2 (ja) * 1975-10-31 1984-05-02 タイトウ カブシキガイシヤ シンキノヤクリカツセイタトウブンカイブツノ セイゾウホウホウ
JP4893609B2 (ja) * 2007-12-07 2012-03-07 トヨタ自動車株式会社 半導体装置とその半導体装置を備えている給電装置の駆動方法
JP4788734B2 (ja) * 2008-05-09 2011-10-05 トヨタ自動車株式会社 半導体装置
JP4947230B2 (ja) 2011-08-29 2012-06-06 トヨタ自動車株式会社 半導体装置
DE112012007249B4 (de) 2012-12-20 2021-02-04 Denso Corporation Halbleitervorrichtung
JP6126150B2 (ja) * 2015-03-06 2017-05-10 トヨタ自動車株式会社 半導体装置
JP6443267B2 (ja) 2015-08-28 2018-12-26 株式会社デンソー 半導体装置
JP6531589B2 (ja) * 2015-09-17 2019-06-19 株式会社デンソー 半導体装置
JP6780777B2 (ja) * 2017-05-31 2020-11-04 富士電機株式会社 半導体装置
JP7151084B2 (ja) * 2018-01-11 2022-10-12 株式会社デンソー 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010143288A1 (ja) 2009-06-11 2010-12-16 トヨタ自動車株式会社 半導体装置
JP5919121B2 (ja) 2011-07-27 2016-05-18 株式会社豊田中央研究所 ダイオードおよび半導体装置
JP2016225345A (ja) 2015-05-27 2016-12-28 トヨタ自動車株式会社 逆導通ｉｇｂｔ
JP2017059725A (ja) 2015-09-17 2017-03-23 トヨタ自動車株式会社 半導体装置
JP2018073911A (ja) 2016-10-26 2018-05-10 株式会社デンソー 半導体装置
WO2019117248A1 (ja) 2017-12-14 2019-06-20 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
WO2021045116A1 (ja) 2021-03-11
JP2021040071A (ja) 2021-03-11
US12191381B2 (en) 2025-01-07
CN114342087A (zh) 2022-04-12
US20220181471A1 (en) 2022-06-09

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